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    SIA907EDJT Price and Stock

    Vishay Siliconix SIA907EDJT-T1-GE3

    MOSFET 2P-CH 20V 4.5A SC70-6
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    DigiKey SIA907EDJT-T1-GE3 Reel 3,000 3,000
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    SIA907EDJT-T1-GE3 Cut Tape 593 1
    • 1 $0.53
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    • 100 $0.3151
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    SIA907EDJT-T1-GE3 Digi-Reel 1
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    Vishay Siliconix SIA907EDJ-T1-GE3

    MOSFET N-CH 30V SMD
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    DigiKey SIA907EDJ-T1-GE3 Reel
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    Vishay Intertechnologies SIA907EDJT-T1-GE3

    DUAL P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SIA907EDJT-T1-GE3)
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    Avnet Americas SIA907EDJT-T1-GE3 Reel 20 Weeks 3,000
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    Mouser Electronics SIA907EDJT-T1-GE3 110,759
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    TTI SIA907EDJT-T1-GE3 Reel 3,000
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    EBV Elektronik SIA907EDJT-T1-GE3 21 Weeks 3,000
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    SIA907EDJT Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIA907EDJT-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 4.5A SC-70-6L Original PDF

    SIA907EDJT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SiA907EDJT Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.057 at VGS = - 4.5 V - 4.5a 0.095 at VGS = - 2.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiA907EDJT SC-70 2002/95/EC SC-70-6L-Dual 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiA907EDJT Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.057 at VGS = - 4.5 V - 4.5a 0.095 at VGS = - 2.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiA907EDJT SC-70 2002/95/EC SC-70-6L-Dual 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiA907EDJT Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.057 at VGS = - 4.5 V - 4.5a 0.095 at VGS = - 2.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiA907EDJT SC-70 2002/95/EC SC-70-6L-Dual 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiA907EDJT-GE3_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiA907EDJT-GE3 AN609, 4937u 0991m 2208m 0761u 4691u 8647u 4259u 10-May-11

    Untitled

    Abstract: No abstract text available
    Text: SiA907EDJT www.vishay.com Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) ID (A) 0.057 at VGS = -4.5 V -4.5 a 0.095 at VGS = -2.5 V -4.5 a Qg (TYP.) 4.9 nC PowerPAK SC-70-6L Dual S2 4 D1 6 G2 5 • TrenchFET® power MOSFET


    Original     		PDF SiA907EDJT SC-70-6L SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    NX3008

    Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
    Text: Advanced cross reference list DFN* MOSFETs *DFN: discrete flat no-leads *in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1


    Original     		PDF AON2240 AON2401 AON2405 AON2406 AON2407 AON2408 AON2409 AON2410 AON2420 AON2701 NX3008 IRLHS6242 SiA431DJ SSM6J503NU IRLHS2242 DMN3730UFB4 FDMA1028NZ FDMA3028N

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance PowerPAK SC-70 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:


    Original     		PDF SC-70 SiA519EDJ com/mosfets/powerpak-sc-70-package/ VMN-PT0131-1402

    LTC3882

    Abstract: No abstract text available
    Text: Electrical Specifications Subject to Change LTC3882 Dual Output PolyPhase Step-Down DC/DC Voltage Mode Controller with Digital Power System Management DESCRIPTION FEATURES PMBus/I2C Compliant Serial Interface – Monitor Voltage, Current, Temperature and Faults


    Original     		PDF LTC3882 250kHz 25MHz 250kHz 770kHz LTC3861 LTC4449 3882p com/LTC3882 LTC3882

    Untitled

    Abstract: No abstract text available
    Text: LTC3882 Dual Output PolyPhase Step-Down DC/DC Voltage Mode Controller with Digital Power System Management DESCRIPTION FEATURES PMBus/I2C Compliant Serial Interface – Monitor Voltage, Current, Temperature and Faults – Digitally Programmable Voltage, Current Limit,


    Original     		PDF LTC3882 250kHz 25MHz 40-requency 250kHz 770kHz LTC3861 LTC4449 3882f com/LTC3882

    SiA427DJ

    Abstract: SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance AND TEC I INNOVAT O L OGY PowerPAK SC-70 N HN POWER MOSFETs O 19 62-2012 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:


    Original     		PDF SC-70 SC-70 com/mosfets/powerpak-sc-70-package/ VMN-PT0131-1209 SiA427DJ SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ

    Si7141

    Abstract: SiA447DJ SI7615A
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on


    Original     		PDF SC-75 SC-70 VMN-PT0197-1209 Si7141 SiA447DJ SI7615A

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836