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    400V 12V Search Results

    400V 12V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd
    D1U54T-M-2500-12-HB4C Murata Manufacturing Co Ltd 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR Visit Murata Manufacturing Co Ltd
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd

    400V 12V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description • 10.5 A, 400V, RDS on = 0.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQP11N40C/FQPF11N40C FQP11N40C/FQPF11N40C

    FQPF4N50C

    Abstract: FQP11N40C FQP3N50C FQPF11N40C FQPF3N50C FQP4N50C
    Text: QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description • 10.5 A, 400V, RDS on = 0.5 : @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQP11N40C/FQPF11N40C FQPF4N50C FQP11N40C FQP3N50C FQPF11N40C FQPF3N50C FQP4N50C

    MOSFET 400V TO-220

    Abstract: FQP11N40C fqpf11n40c N-Channel mosfet driver 400v to220 MOSFET 400V FQP3N50C FQPF3N50C N-Channel mosfet 400v to220
    Text: FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description • 10.5 A, 400V, RDS on = 0.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQP11N40C/FQPF11N40C FQP11N40C/FQPF11N40C MOSFET 400V TO-220 FQP11N40C fqpf11n40c N-Channel mosfet driver 400v to220 MOSFET 400V FQP3N50C FQPF3N50C N-Channel mosfet 400v to220

    MOSFET 400V

    Abstract: MOSFET 400V TO-220 p channel mosfet 100v n-Channel mosfet 400v FQP11N40C FQP3N50C FQPF11N40C FQPF3N50C
    Text: FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description • 10.5 A, 400V, RDS on = 0.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQP11N40C/FQPF11N40C FQP11N40C/FQPF11N40C MOSFET 400V MOSFET 400V TO-220 p channel mosfet 100v n-Channel mosfet 400v FQP11N40C FQP3N50C FQPF11N40C FQPF3N50C

    IRFD310

    Abstract: TB334
    Text: IRFD310 Data Sheet January 2002 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET Features • 0.4A, 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		PDF IRFD310 IRFD310 TB334

    TOT - 4301

    Abstract: LA 4303 IRFD320 TA17404 TB334
    Text: IRFD320 Data Sheet July 1999 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET • 0.5A, 400V • rDS ON = 1.800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    Original     		PDF IRFD320 TB334 TA17404. TOT - 4301 LA 4303 IRFD320 TA17404 TB334

    IRF340

    Abstract: TA17424 to204ae TB334
    Text: IRF340 Data Sheet March 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET • 10A, 400V • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance


    Original     		PDF IRF340 TB334 O-204AE TA17424. IRF340 TA17424 to204ae TB334

    IRFF310

    Abstract: TB334
    Text: IRFF310 Data Sheet March 1999 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET • 1.35A, 400V • rDS ON = 3.600Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    Original     		PDF IRFF310 TB334 TA17444. IRFF310 TB334

    IRFF320

    Abstract: TA17404 TB334
    Text: IRFF320 Data Sheet January 2002 2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features • 2.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF320 TA17404. IRFF320 TA17404 TB334

    IRFP350

    Abstract: TB334
    Text: IRFP350 Data Sheet January 2002 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET Features • 16A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFP350 TA17434. IRFP350 TB334

    SCR0840

    Abstract: scr 0840 VAK marking
    Text: SCR0840 Sensitive Gate SCRs 400V, 0.8A Sensitive Gate SCRs Features y Repetitive Peak Off-State Voltage : 400V y R.M.S On-State Current : IT RMS =0.8A y Low On-state Voltage : VTM=1.2V(Typ.) General Description PNPN devices designed for high volume, line-powered


    Original     		PDF SCR0840 KSD-D0A001-003 SCR0840 scr 0840 VAK marking

    FQP6N40CF

    Abstract: No abstract text available
    Text: FQP6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 16nC)


    Original     		PDF FQP6N40CF FQP6N40CF

    IRFP350

    Abstract: TB334
    Text: IRFP350 Data Sheet July 1999 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP350 PACKAGE TO-247 2319.4 Features • 16A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		PDF IRFP350 O-247 IRFP350 TB334

    IRFF330

    Abstract: TA17414 TB334
    Text: IRFF330 Data Sheet January 2002 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET Features • 3.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF330 TA17414. IRFF330 TA17414 TB334

    Untitled

    Abstract: No abstract text available
    Text: SCR0840 Sensitive Gate SCRs 400V, 0.8A Sensitive Gate SCRs Features „ Repetitive Peak Off-State Voltage : 400V „ R.M.S On-State Current : IT RMS =0.8A „ Low On-state Voltage : VTM=1.2V(Typ.) General Description PNPN devices designed for high volume, line-powered


    Original     		PDF SCR0840 O-92ts KSD-D0A001-003

    IRFP340

    Abstract: TA17424 TB334
    Text: IRFP340 Data Sheet January 2002 11A, 400V, 0.550 Ohm, N-Channel Power MOSFET Features • 11A, 400V This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are


    Original     		PDF IRFP340 O-247 IRFP340 TA17424 TB334

    IRFD320

    Abstract: TA17404 TB334
    Text: IRFD320 Data Sheet January 2002 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features • 0.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFD320 IRFD320 TA17404 TB334

    Untitled

    Abstract: No abstract text available
    Text: TM FQP6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 16nC)


    Original     		PDF FQP6N40CF FQP6N40CF

    IRFP340

    Abstract: TA17424 TB334 T2T-2
    Text: IRFP340 Data Sheet July 1999 11A, 400V, 0.550 Ohm, N-Channel Power MOSFET • 11A, 400V Ordering Information IRFP340 TO-247 • rDS ON = 0.550Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds


    Original     		PDF IRFP340 O-247 TB334 TA17424. IRFP340 TA17424 TB334 T2T-2

    IRFF310

    Abstract: TB334
    Text: IRFF310 Data Sheet January 2002 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET Features • 1.35A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF310 IRFF310 TB334

    IRFF320

    Abstract: TA17404 TB334
    Text: IRFF320 Data Sheet March 1999 2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET • 2.5A, 400V Formerly developmental type TA17404. Ordering Information PACKAGE 1890.4 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		PDF IRFF320 TA17404. IRFF320 TA17404 TB334

    IRFF330

    Abstract: TA17414 TB334
    Text: IRFF330 Data Sheet March 1999 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET • 3.5A, 400V Formerly developmental type TA17414. Ordering Information IRFF330 PACKAGE TO-205AF 1893.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		PDF IRFF330 TA17414. O-205AF IRFF330 TA17414 TB334

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF740 Power MOSFET 10A, 400V, 0.55Ω N-CHANNEL POWER MOSFET 1  1 1 TO-220F1 TO-220F2 FEATURES * 10A, 400V, R DS ON (0.55Ω) * Single Pulse Avalanche Energy Rated * Rugged - SOA is Power Dissipation Limited * Fast Switching Speeds


    Original     		PDF UF740 O-220F1 O-220F2 O-220F O-220 O-263 QW-R502-078.

    Untitled

    Abstract: No abstract text available
    Text: rr\rm _ TECHNOLOGY F6OTURCS LT1208/LT1209 Dual and Q uad 45MHz, 400V/|is O p Am ps D CSCRIPTIOn • 45MHz Gain-Bandwidth ■ 400V/ns Slew Rate ■ Unity-Gain Stable ■ 7V/mV DC Gain, RL = 500Q ■ 3mV Maximum Input Offset Voltage ■ +12V Minimum Output Swing into 500i2


    OCR Scan     		PDF LT1208/LT1209 45MHz, 45MHz 00V/ns 500i2 LT1208/LT1209 LT1208/ LT1209 140ns