Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FZT658 Green 400V NPN HIGH VOLTAGE TRANSISTOR IN SOT223 Features Mechanical Data • • • • • BVCEO > 400V IC = 500mA High Continuous Current ICM = 1A Peak Pulse Current Low Saturation Voltage VCE SAT < 250mV @ 50mA
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Original
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FZT658
OT223
500mA
250mV
200mA
J-STD-020
MIL-STD-202,
FZT758
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PDF
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marking P58
Abstract: FCX558TA transistor p58 sot89 package
Text: A Product Line of Diodes Incorporated FCX558 400V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • BVCEO > -400V IC = -200mA high Continuous Current Low saturation voltage VCE sat < -200mV @ -20mA
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Original
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FCX558
-400V
-200mA
-200mV
-20mA
FCX458
AEC-Q101
J-STD-020
MIL-STD-202,
FCX558
marking P58
FCX558TA
transistor p58 sot89 package
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PDF
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Zetex T 705
Abstract: TRANSISTOR MARKING 1d6 TS16949 ZXTN08400BFF ZXTP08400BFF ZXTP08400BFFTA
Text: ZXTP08400BFF 400V, SOT23F, PNP medium power high voltage transistor Summary; BVCEO > -400V BVECO > -6V IC cont = -0.2A VCE(sat) < 220mV @ 100mA PD = 1.5W Complementary part number ZXTN08400BFF Description C This PNP transistor has been designed for applications requiring high
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Original
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ZXTP08400BFF
OT23F,
-400V
220mV
100mA
ZXTN08400BFF
OT23F
ZXTP08400BFFTA
D-81541
Zetex T 705
TRANSISTOR MARKING 1d6
TS16949
ZXTN08400BFF
ZXTP08400BFF
ZXTP08400BFFTA
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PDF
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TS16949
Abstract: ZXTN08400BFF ZXTP08400BFF ZXTP08400BFFTA
Text: ZXTP08400BFF 400V, SOT23F, PNP medium power high voltage transistor Summary; BVCEO > -400V BVECO > -6V IC cont = -0.2A VCE(sat) < 220mV @ 100mA PD = 1.5W Complementary part number ZXTN08400BFF Description C This PNP transistor has been designed for applications requiring high
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Original
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ZXTP08400BFF
OT23F,
-400V
220mV
100mA
ZXTN08400BFF
OT23F
ZXTP08400BFFTA
D-81541
TS16949
ZXTN08400BFF
ZXTP08400BFF
ZXTP08400BFFTA
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PDF
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g6n50e
Abstract: G6N50 HGTD6N40E1 HGTD6N40E1S HGTD6N50E1 HGTD6N50E1S
Text: HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S 6A, 400V and 500V N-Channel IGBTs March 1997 Features Packages HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA • 6A, 400V and 500V • VCE ON : 2.5V Max. EMITTER • TFALL: 1.0µs • Low On-State Voltage COLLECTOR
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Original
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HGTD6N40E1,
HGTD6N40E1S,
HGTD6N50E1,
HGTD6N50E1S
HGTD6N50E1
O-251AA
O-252AA
g6n50e
G6N50
HGTD6N40E1
HGTD6N40E1S
HGTD6N50E1
HGTD6N50E1S
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PDF
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTP558L 400V PNP High Voltage Transistor in TO92L Features and Benefits Mechanical Data • BVCEO > 400V • Case: TO92L Long Body • Power dissipation PD = 1W • Case Material: Molded Plastic, “Green” Molding Compound.
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Original
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ZXTP558L
AEC-Q101
DS32186
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PDF
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green FZT458 400V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • BVCEO > 400V Max Continuous Current IC = 300mA Low Saturation Voltage
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Original
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FZT458
OT223
300mA
FZT558
AEC-Q101
OT223
J-STD-020
MIL-STD-202,
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PDF
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G10N50
Abstract: HGTD10N40F1 HGTD10N40F1S HGTD10N50F1 HGTD10N50F1S HGTD10N40
Text: HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S 10A, 400V and 500V N-Channel IGBTs March 1997 Features Packages • 10A, 400V and 500V HGTD10N40F1, HGTD10N50F1 JEDEC TO-251AA • VCE ON 2.5V Max. • TFALL ≤1.4µs EMITTER COLLECTOR GATE • Low On-State Voltage
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Original
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HGTD10N40F1,
HGTD10N40F1S,
HGTD10N50F1,
HGTD10N50F1S
HGTD10N50F1
O-251AA
O-252AA
G10N50
HGTD10N40F1
HGTD10N40F1S
HGTD10N50F1
HGTD10N50F1S
HGTD10N40
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PDF
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTP558L 400V PNP MEDIUM POWER HIGH VOLTAGE TRANSISTOR Features and Benefits Mechanical Data • • • • • • VCEO = 400V Power dissipation PD = 1W Lead, Halogen and Antimony Free, RoHS Compliant Note 1 "Green" Device (Note 2)
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Original
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ZXTP558L
ZXTP558LSTZ
ZXTP558
900ppm
DS32186
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PDF
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ZXTP558
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTP558L 400V PNP High Voltage Transistor in TO92L Features and Benefits Mechanical Data • • • • • • • • • • BVCEO > 400V Power dissipation PD = 1W Totally Lead-Free & Fully RoHS compliant Notes 1 & 2
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Original
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ZXTP558L
AEC-Q101
ZXTP558LSTZ
ZXTP558L
DS32186
ZXTP558
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PDF
|
ZXTP558
Abstract: ZXTP558L ZXTP558LSTZ all diodes ratings
Text: A Product Line of Diodes Incorporated ZXTP558L 400V PNP MEDIUM POWER HIGH VOLTAGE TRANSISTOR Features and Benefits Mechanical Data • • • • • • VCEO = 400V Power dissipation PD = 1W Lead, Halogen and Antimony Free, RoHS Compliant Note 1 "Green" Device (Note 2)
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Original
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ZXTP558L
ZXTP558LSTZ
ZXTP558
900ppm
DS32186
ZXTP558
ZXTP558L
ZXTP558LSTZ
all diodes ratings
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PDF
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FZT558TA
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green FZT558 400V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • BVCEO > -400V IC = -200mA high Continuous Current Low saturation voltage VCE sat < -200mV @ -20mA
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Original
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FZT558
OT223
-400V
-200mA
-200mV
-20mA
AEC-Q101
OT223
J-STD-020
MIL-STD-202,
FZT558TA
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PDF
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2SC2552
Abstract: NPN Transistor 1A 400V npn transistors 400V 1A DC DC converter 1A 400V 400V voltage regulator high voltage fast switching npn transistor npn transistors 400V 0.1A transistor Ic 1A datasheet NPN DC DC converter 400V HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2552 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 400V(Min) ·Fast Switching Speed APPLICATIONS ·Switching regulator and high voltage switching applications.
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Original
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2SC2552
2SC2552
NPN Transistor 1A 400V
npn transistors 400V 1A
DC DC converter 1A 400V
400V voltage regulator
high voltage fast switching npn transistor
npn transistors 400V 0.1A
transistor Ic 1A datasheet NPN
DC DC converter 400V
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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PDF
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTA1703 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. DC-DC CONVERTER. LOW POWER SWITCHING REGULATOR. FEATURES ・High Breakdown Voltage. : VCEO=-400V ・Low Collector Saturation Voltage : VCE sat =-1V(max.), (IC=-100mA, IB=-10mA)
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Original
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KTA1703
-400V
-100mA,
-10mA)
-100mA
-10mA
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PDF
|
|
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2SC2139
Abstract: 400V switching transistor 400V voltage regulator npn transistor 400V DC DC converter 5v to 400V NPN transistor for switching applications, 400V
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2139 DESCRIPTION •High Collector-Emitter Breakdown Voltage: V BR CEO= 400V (Min) ·High Switching Speed APPLICATIONS ·Switching regulator and high voltage switching applications.
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Original
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2SC2139
2SC2139
400V switching transistor
400V voltage regulator
npn transistor 400V
DC DC converter 5v to 400V
NPN transistor for switching applications, 400V
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PDF
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZTX758 400V PNP MEDIUM POWER HIGH VOLTAGE TRANSISTOR IN E-LINE Features Mechanical Data • BVCEO > -400V Case: E-Line TO-92 Compatible IC = -0.5A High Continuous Collector Current Case Material: molded plastic, “Green” Molding Compound
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Original
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ZTX758
-400V
-50mA
AEC-Q101
DS33299
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PDF
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KTA1703
Abstract: to-126 pnp switching transistor -400v DC DC converter 5v to 400V
Text: SEMICONDUCTOR KTA1703 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. DC-DC CONVERTER. LOW POWER SWITCHING REGULATOR. A B D C E F FEATURES ᴌHigh Breakdown Voltage. G : VCEO=-400V H ᴌLow Collector Saturation Voltage DIM MILLIMETERS
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Original
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KTA1703
-400V
-100mA,
-10mA)
KTA1703
to-126 pnp switching transistor -400v
DC DC converter 5v to 400V
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PDF
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400V voltage regulator
Abstract: 2Sc5352 npn transistors 400V 1A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5352 DESCRIPTION •High Collector-Emitter Breakdown Voltage: V BR CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulator and high voltage switching
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Original
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2SC5352
VCC200V
400V voltage regulator
2Sc5352
npn transistors 400V 1A
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PDF
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2N6975
Abstract: 2N6976 2N6977 2N6978 AN7254 AN7260 2N697
Text: 2N6975, 2N6976, 2N6977, 2N6978 Semiconductor 5A, 400V and 500V N-Channel IGBTs April 1995 Features Package JEDEC TO-204AA BOTTOM VIEW • 5A, 400V and 500V • VCE ON 2V COLLECTOR (FLANGE) EMITTER • TFI 1µs, 0.5µs • Low On-State Voltage GATE • Fast Switching Speeds
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Original
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2N6975,
2N6976,
2N6977,
2N6978
O-204AA
2N6977
2N6978
AN7254
2N6975
2N6976
AN7260
2N697
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PDF
|
Untitled
Abstract: No abstract text available
Text: 2DA1971 400V PNP HIGH VOLTAGE SWITCHING TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • BVCEO > -400V Max Continuous Current IC = -0.5A High Gain Holds up hFE ≥ 140 @ IC = -100mA Totally Lead-Free & Fully RoHS compliant Notes 1 & 2
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Original
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2DA1971
-400V
-100mA
AEC-Q101
J-STD-020
MIL-STD-202,
DS35669
|
PDF
|
NPN Transistor 50A 400V
Abstract: NPN Transistor 1A 400V 400v 50A Transistor npn transistors 400V 1A NPN Transistor 10A 400V 400V switching transistor 400V voltage regulator NPN Transistor 1.0A 400V pf 08a -pt transistor Ic 1A datasheet NPN
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3969 DESCRIPTION •Low Collector Saturation Voltage ·High Collector-Emitter Breakdown Voltage: V BR CEO= 400V (Min) ·High Switching Speed APPLICATIONS ·Designed for switching regulator applications
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Original
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2SC3969
NPN Transistor 50A 400V
NPN Transistor 1A 400V
400v 50A Transistor
npn transistors 400V 1A
NPN Transistor 10A 400V
400V switching transistor
400V voltage regulator
NPN Transistor 1.0A 400V
pf 08a -pt
transistor Ic 1A datasheet NPN
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PDF
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2N6975
Abstract: 2n6978 2N6976 2N6977 AN7254 AN7260
Text: 2N6975, 2N6976, 2N6977, 2N6978 5A, 400V and 500V N-Channel IGBTs April 1995 Features Package JEDEC TO-204AA BOTTOM VIEW • 5A, 400V and 500V • VCE ON 2V COLLECTOR (FLANGE) EMITTER • TFI 1µs, 0.5µs • Low On-State Voltage GATE • Fast Switching Speeds
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Original
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2N6975,
2N6976,
2N6977,
2N6978
O-204AA
2N6977
2N6978
2N6975
2N6976
AN7254
AN7260
|
PDF
|
2N6510
Abstract: 2N6513 2n6512 2N6511 2NG510 2N6514
Text: 2N6510 2N6511 2N6512 2N6513 2N6514 POWER TRANSISTORS 7 Amp, 400V, Triple Diffused NPN Mesa FEATURES • Collector-Base Voltage: up to 400V • Peak C ollector Current: 10A • Rise Time: < 1.5/js > • Fall Time: < 1.5ms \ lc = 4A DESCRIPTION These high voltage trip le diffused glass
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OCR Scan
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2N6510
2N6511
2N6512
2N6513
2N6514
2NG510
2N6514
|
PDF
|
KTA1703
Abstract: No abstract text available
Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1703 EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. DC-DC CONVERTER. LOW POWER SWITCHING REGULATOR. FEATURES • High Breakdown Voltage. : V Ceo = -400V • Low Collector Saturation Voltage
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OCR Scan
|
KTA1703
-400V
-100mA,
-10mA)
KTA1703
|
PDF
|
