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    404 SOT Search Results

    404 SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    404 SOT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IR615

    Abstract: SS0225CS3
    Text: PRELIMINARY SS0225CS3 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: 562 404-4474 * Fax: (562) 404-1773 2 AMP 25 VOLTS CENTERTAP SUPER SCHOTTKY RECTIFIER Designer's Data Sheet FEATURES: Optimized for 2.1V and 3.3V output power supplies. The SUPER


    Original     		PDF SS0225CS3 OT-223 300mV 100oC 100oC, IR615 SS0225CS3

    Untitled

    Abstract: No abstract text available
    Text: 5RO/223 thru 15RO/223 PRELIMINARY SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: 562 404-4474 * Fax: (562) 404-1773 Designer's Data Sheet FEATURES: Optimized for 12V and 15V auxiliary output power supplies. The EPION series has been designed to provide low forward voltage


    Original     		PDF 5RO/223 15RO/223 OT-223 175oC 150oC, 10VDC, 125oC 1E-05

    PHP18NQ10T

    Abstract: PHB27NQ10T BYC05B-600 PHB23NQ10T pbyr1045 BYV72EW200 Msd119 BYC08B-600 byv26 equivalent bridge rectifier 8341
    Text: Philips Semiconductors Power in Switched Mode Power Supplies SOT 428 DPAK SOT 404 SOT 223 SOT 429 D 2-PAK 1999 TO247 M3D306 TO220AB SOD 59 TO220AC SOT 186A SOD 113 ISOLATED TO22OAB 2-PIN SOT 186A Philips Semiconductors Ð a worldwide company Argentina: see South America


    Original     		PDF M3D306 O220AB O220AC O22OAB 30EX-150 BYQ30EX-200 BYV32EX-150 BYV42EX-150 BYV32EX-200 BYV42EX-200 PHP18NQ10T PHB27NQ10T BYC05B-600 PHB23NQ10T pbyr1045 BYV72EW200 Msd119 BYC08B-600 byv26 equivalent bridge rectifier 8341

    zvn4206

    Abstract: zvn4206 application FAST DMOS FET Switches n-CHANNEL ZVN4206G DSA003784
    Text: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4206G ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 60 Gate-Source Threshold Voltage VGS(th) 1.3 Gate-Body Leakage MAX.


    Original     		PDF OT223 ZVN4206G zvn4206 zvn4206 application FAST DMOS FET Switches n-CHANNEL ZVN4206G DSA003784

    IC 6650

    Abstract: 1N751 LT1460 LT1461 LT1790 LT6650 LT6650CS5 LT6650HS5 LT6650IS5 MO-193
    Text: LT6650 Micropower, 400mV Reference with Rail-to-Rail Buffer Amplifier in SOT-23 U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Low Quiescent Current 5.6µA typical Wide Supply Range: 1.4V to 18V 400mV Reference ±1% Maximum Accuracy Over Temperature at 5V


    Original     		PDF LT6650 400mV OT-23 400mV 10ppm/ LT1461 LT1494/LT1495/ IC 6650 1N751 LT1460 LT1461 LT1790 LT6650 LT6650CS5 LT6650HS5 LT6650IS5 MO-193

    at8563s

    Abstract: AT8563 AT8563T AT8563DS001V1 32.768khz 5ppm AnalogTek N1409-6 AT8563P PCF8563 RS 404 CB
    Text: AnalogTek 武汉芯景科技有限公司 AT8563 使用说明书 ——带 I2C 接口的实时时钟/日历芯片 文档编号： 发布日期： AT8563DS001V1.0 2009-2-28 二〇〇九年二月 本文档是 AT8563 实时时钟/日历芯片的使用说明书，内容包括


    Original     		PDF AT8563 AT8563DS001V1 AT8563 at8563s AT8563T 32.768khz 5ppm AnalogTek N1409-6 AT8563P PCF8563 RS 404 CB

    6650

    Abstract: No abstract text available
    Text: LT6650 Micropower, 400mV Reference with Rail-to-Rail Buffer Amplifier in SOT-23 U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Low Quiescent Current 5.6µA typical Wide Supply Range: 1.4V to 18V 400mV Reference ±1% Maximum Accuracy Over Temperature at 5V


    Original     		PDF LT6650 400mV OT-23 400mV 10ppm/Â LT1461 LT1494/LT1495/ 6650

    IC 6650

    Abstract: 6650 SOT23 LT6650CS5 MARKING 1N751 LT1460 LT1461 LT1790 LT6650 LT6650CS5 LT6650HS5
    Text: LT6650 Micropower, 400mV Reference with Rail-to-Rail Buffer Amplifier in SOT-23 U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Low Quiescent Current 5.6µA typical Wide Supply Range: 1.4V to 18V 400mV Reference ±1% Maximum Accuracy Over Temperature at 5V


    Original     		PDF LT6650 400mV OT-23 400mV 10ppm/ LT1461 LT1494/LT1495/ IC 6650 6650 SOT23 LT6650CS5 MARKING 1N751 LT1460 LT1461 LT1790 LT6650 LT6650CS5 LT6650HS5

    PCA8563

    Abstract: AT8565S AnalogTek PCF8563 10H32 DIP-88 AT856 AT8565 STA 404 A I C B5B0
    Text: AnalogTek 武汉芯景科技有限公司 AT8565 使用说明书 ——I2C 接口带校准寄存器的实时时钟/日历芯片 文档编号： 发布日期： AT8565DS001V1.0 2009-02-28 二〇〇九年二月 本文档是 AT8565 实时时钟/日历芯片的使用说明书，内容包括


    Original     		PDF AT8565 AT8565DS001V1 AT8565 PCA8563 AT8565S AnalogTek PCF8563 10H32 DIP-88 AT856 STA 404 A I C B5B0

    Untitled

    Abstract: No abstract text available
    Text: SOT223 N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVN4206G ISSUE 3 - JANUARY 1996 ✪ FEATURES * Compact geometry * Fast sw itching speeds * No secondary breakdow n and Excellent temperature stability * High input impedance and low current drive * Ease of parralleling


    Original     		PDF OT223 ZVN4206G ZVN4206 Dissi00

    Untitled

    Abstract: No abstract text available
    Text: LM4040/4041 LM4040/404 Precision Micropower Shunt Voltage Reference General Description Features Ideal for space critical applications, the LM4040 and LM4041 precision voltage references are available in the subminia­ ture 3mm x 1,3mm SOT-23 surface-mount package.


    OCR Scan     		PDF LM4040/4041 LM4040/404 LM4040 LM4041 OT-23 LM4041 LM4041-1

    transistor 667

    Abstract: No abstract text available
    Text: ^^53^31 0035133 404 APX Philips S em iconductors Product specification N AHER PHILIPS/DISCRETE NPN 6 GHz wideband transistor FEATURES • L7E 1 e BFR93A PINNING PIN High power gain DESCRIPTION • Low noise figure • Very low intermodulation distortion 2


    OCR Scan     		PDF BFR93A BFT93. transistor 667

    Untitled

    Abstract: No abstract text available
    Text: bbSa^El ODETBbM 404 « A P X Philips Semiconductors Product specification HF/VHF power MOS transistor — BLF175 N AMER PHILIPS/DISCRETE FEATURES b'JE D PIN CONFIGURATION • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability


    OCR Scan     		PDF BLF175 OT123 MCA26 bbS3T31

    sot 37

    Abstract: BF970 SOT-37 DDB7712 GDE7711 Self-Oscillating mixer BF-970
    Text: N AUER PHILIPS/DISCRETE b'îE 1> bbSa'lBl GDE7711 404 BF970 SILICON PLANAR EPITAXIAL T RANSISTO R P-N-P transistor in a plastic T-package intended for application as self-oscillating mixer stage in u.h.f. tuners. Q U IC K R E F E R E N C E D A T A Collector-base voltage open emitter


    OCR Scan     		PDF bbS3131 GDE7711 BF970 OT-37. sot 37 BF970 SOT-37 DDB7712 Self-Oscillating mixer BF-970

    Untitled

    Abstract: No abstract text available
    Text: LED Lamps D • SHARP CORP fliaOTTB 000705*1 404 GL9DD41 Series ISRPJ GL9DD41 Series Rectangle Type LED Lamps T - H I- Z 3 I Model No. GL9PR41 GL9HY41 Red Yellow Outline Dimensions U nit: m m GaP GaAsP/GaP I Features 1 . 1 .9 m m x 1 .9 m m x 2 p c s r e c ta n g le ty p e


    OCR Scan     		PDF GL9DD41 GL9DD41 GL9PR41 GL9HY41 D070b0 GL9PR41

    MMBT404A

    Abstract: No abstract text available
    Text: ]>F|b3b7E54 MO TO RO LA SC ÍXSTRS/R F> 6367254 M OT O RO L A SC XSTRS/R □ D flEO E? fi 96D 8 2 0 2 7 . F D t M A XIM U M RATINGS *- 37~ 2 3 Value Sym bol 404 404A Unit Collector-Emitter Voltage VCEO 24 35 Vdc Collector-Base Voltage v CBO 25 40 Vdc Emitter-Base Voltage


    OCR Scan     		PDF b3b7E54 MMBT404 MMBT404A OT-23 O-236AA/AB) MMBT404A

    63E17

    Abstract: power thyristors
    Text: MECHANICAL DATA Page SO D 27 550 SO T54 551 SO T 5 4 A 552 S O T 5 4 variant 553 SO T78 554 SO T82 555 S O T 186 A 556 S O T 223 557 S O T 404 558 SO T 428 559 Philips Semiconductors Power Thyristors and Triacs Mechanical Data Notes 1. For further information refer to mounting instructions for axial-leaded devices.


    OCR Scan     		PDF OT428 OT42B OT428 63E17 power thyristors

    heat sink design guide, IGBT

    Abstract: EVIC420A RF MOSFETs evic TO-264 heat sink to220 ixys to-247 DEIC DE275 igbt to247
    Text: Gate Drive Evaluation Boards MOSFET/IGBT Gate Drive Modules/Gate Drive 1C Evaluation Boards The EV-Series MOSFET Gate Drive Modules are general purpose gate drive circuits designed to drive the DE-Series RF POWER MOSFETs, as well as industry-standard MOSFETs


    OCR Scan     		PDF O-220, O-247, O-264 OT-227 boar15 T0-220, O-264, heat sink design guide, IGBT EVIC420A RF MOSFETs evic TO-264 heat sink to220 ixys to-247 DEIC DE275 igbt to247

    Untitled

    Abstract: No abstract text available
    Text: BD950F; 952F BD954F;956F _ SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD949F, BD951F, BD953F and BD955F.


    OCR Scan     		PDF BD950F; BD954F OT186 BD949F, BD951F, BD953F BD955F. BD950F bb53T31 D034SAO

    C78N24

    Abstract: C4574 MP-45G MP45G MPC1944 78L08 sot-89 C4082 UPC7815A regulators volt PC2406A
    Text: FULL PRODUCT LINE GUIDE Single Operational Amplifiers Part No. Description Package*0’ Page /iP C 7 4 i General Purpose Operational Amplifier C , G - 8 Pin ;jPC811 J - FE T Input Low - Offset Operational Amplifier C, G - 8 Pm 66 ¿/PC813 J - FET Input Low - Offset Operational Amplifier


    OCR Scan     		PDF uPC741 uPC811 uPC813 uPC815 /iPC4061 uPC4071 PC4081 iPC4250 UPC1555 PD5205 C78N24 C4574 MP-45G MP45G MPC1944 78L08 sot-89 C4082 UPC7815A regulators volt PC2406A

    bd955

    Abstract: BD955F 952F BD949F BD950F BD951F BD953F BD954F
    Text: BD950F;952F SbE D PHILIPS INTERNATIONAL • R D Q fid F - QÇ>RF 711D02ti 0 0 4 3 1 1 b 432 H P H I N SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors each in a SOT186 envelope w ith an electrically insulated mounting base. NPN complements are BD949F, BD951F, BD953F and BD955F.


    OCR Scan     		PDF BD950F 004311b OT186 BD949F, BD951F, BD953F BD955F. BD950F bd955 BD955F 952F BD949F BD951F BD954F

    K274

    Abstract: D4050
    Text: SAMSUNG SEMICONDUCTOR SALES OFFICES - U.S.A. Southwest Mem ory products Southwest (Microproducts) 22837 Ventura Blvd. Suite 305 Woodland Hills, CA 91367 (818) 346-6416 FAX: (818) 346-6621 2102 Business Center Drive Suite 169 Irvine, CA 92715 (714) 253-5795


    OCR Scan     		PDF 124th 233-4121x207 K274 D4050

    DR 6236

    Abstract: tl 8819 str 8045 4411B D8024 str28 SF-02631 345B korea cable Neltron
    Text: SAMSUNG SEMICONDUCTOR SALES OFFICES • U.S.A. Southwest Memory products Southwest (Mtcroproducts) 22837 Ventura Blvd. Suits 305 Woodland Hills, C A 91 3 6 7 (818)346-6416 FAX: (818)346-6621 2102 Business Center Drive Suite 169 Irvine, CA 92715 (714) 253-5795


    OCR Scan     		PDF 124th 233-4121x207 275-6391X225 DR 6236 tl 8819 str 8045 4411B D8024 str28 SF-02631 345B korea cable Neltron

    str 8045

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR SALES OFFICES - U.S.A. Southwest Memory products Southwest (Microproducts) 22837 Ventura Blvd. Suite 305 Woodland Hills, CA 91367 (818)346-6416 FAX: (818)346-6621 2102 Business Center Drive Suite 169 Irvine, CA 92715 (714) 253-5795


    OCR Scan     		PDF 124th 233-4121x207 275-6391X225 str 8045