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    414 RF TRANSISTOR Search Results

    414 RF TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    414 RF TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor BF 414

    Abstract: 414 rf transistor 414 transistor K 414 transistor BF 414 BF414 BF transistor datasheet VCE0-30V marking 414
    Text: BF 414 NPN Silicon RF Transistor ● BF 414 For low-noise, common base VHF and FM stages 2 3 1 Type Marking Ordering Code BF 414 – Q62702-F517 Pin Configuration 1 2 3 C B Package1 TO-92 E Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage


    Original     		PDF Q62702-F517 transistor BF 414 414 rf transistor 414 transistor K 414 transistor BF 414 BF414 BF transistor datasheet VCE0-30V marking 414

    MRF181SR1

    Abstract: No abstract text available
    Text: Section Two Motorola RF Discrete Transistors – Data Sheets Device Number Page Number Device Number Page Number MRF134 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2–3 MRF373 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2–258


    Original     		PDF MRF134 MRF136 MRF141 MRF141G MRF148A MRF150 MRF151 MRF21090 MRF21090S MRF21120 MRF181SR1

    MRF1375

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF1375/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF1375 Designed for 1025 –1150 MHz pulse common base amplifier applications such as TACAN and DME. • Guaranteed Performance @ 1090 MHz


    Original     		PDF MRF1375/D MRF1375 MRF1375/D* MRF1375

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB1214M55 TECHNOLOGIES, INC. Silicon Bipolar  Ultra-high fT L-Band Radar Transistor Class C Operation  High Efficiency The high power pulsed radar transistor device part number IB1214M55 is designed for L-Band radar systems operating over


    Original     		PDF IB1214M55 IB1214M55 IB1214M55-REV-NC-DS-REV-C

    gsm 900 amplifier

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9080 MRF9080S N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large–signal, common–


    Original     		PDF MRF9080 MRF9080S gsm 900 amplifier

    n channel MOSFET 45 w 10 v

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S MRF21125SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110


    Original     		PDF MRF21125S MRF21125SR3 MRF21125 n channel MOSFET 45 w 10 v

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 Designed for broadband commercial and industrial applications with


    Original     		PDF 22060MR1 MRF5S19060MBR1 MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1

    transistor BF 414

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon RF Transistor BF 414 • For low-noise, common base VH F and FM stages Type Marking Ordering Code BF 414 - Q62702-F517 Pin Co nfiguraltion 1 2 3 B C Package1 E TO-92 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage


    OCR Scan     		PDF Q62702-F517 transistor BF 414

    BF414

    Abstract: transistor BF 414 414 transistor BF 414 marking code B1C TRANSISTOR MARKING CODE "SP" K 414 transistor
    Text: TELEFUNKEN ELECTRONIC Û1 C D • ô'tëO D 'Jt. 0 0 Q5 2 G4 fi 7 BF 414 M electronic TO Creative Technologies Silicon PNP Epitaxial Planar RF Transistor Applications: VHF input stages in common base configuration Features: • Small feedback capacitance • Large signal to intermodulation ratio


    OCR Scan     		PDF

    heat sink design guide, IGBT

    Abstract: EVIC420A RF MOSFETs evic TO-264 heat sink to220 ixys to-247 DEIC DE275 igbt to247
    Text: Gate Drive Evaluation Boards MOSFET/IGBT Gate Drive Modules/Gate Drive 1C Evaluation Boards The EV-Series MOSFET Gate Drive Modules are general purpose gate drive circuits designed to drive the DE-Series RF POWER MOSFETs, as well as industry-standard MOSFETs


    OCR Scan     		PDF O-220, O-247, O-264 OT-227 boar15 T0-220, O-264, heat sink design guide, IGBT EVIC420A RF MOSFETs evic TO-264 heat sink to220 ixys to-247 DEIC DE275 igbt to247

    transistor BF 257

    Abstract: bf414 transistor BF 414 tfk 513 BF 414 transistor BF 258 414 transistor AI-257 db258 Kleine
    Text: Silizium-PNP-Epitaxial-Planar-HF-Transistor Silicon PNP Epitaxial Planar RF Transistor Anwendungen: VHF-Eingangsstufen in Basisschaltung Applications: VHF input stages in com m on base configuration Besondere Merkmale: Features: • Kleine R ückwirkungskapazität


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: » w / IjF i Com I¡near ÜLJ Corporation Quad, Low-Power Monolithic Op Amp CLC414 APPLICATIONS: FEATURES typical : • • • • • • • • • • • • • • • com posite video distribution amps H D TV am plifiers R G B-video am plifiers CCD signal processing


    OCR Scan     		PDF CLC414 000V//XS CLC414

    BF606

    Abstract: BF254 BF414 BF763 BF255 BF450 BF 414 BF979 to-92 type BF979S
    Text: Transistors — bipolar RF tran sisto rs P la stic p acka g e T O 92 NPN PNP = = N Vceo P Figure Characteristics TA = 25°C Maximum ratings Type lc P.O. tore /cBO V^CEaat ft mA Vce V nA V MHz lc leu* V mA mW BF 199 N 25 25 500 85 (> 38) 7 10 <100 - 550 BF 240


    OCR Scan     		PDF

    PO32

    Abstract: 33J6 PH1600
    Text: n/A-con p 2S E o h D • 5^42205 n D G Q S 7b 273 ■ HAP - T-3 3 -H M /A-COM PHI, IN C. 1742 CRENSHAW BLVD, TORRANCE, CALIFORNIA 9 0 5 0 1 213 320-6160 TWX 910-349-6651 FAX 213-618-9191 A # A > M/A-COM PHI, INC. PRELIMINARY DATA SHEET BIPOLAR NPN RF POWER TRANSISTOR


    OCR Scan     		PDF PH1600-32 F--06 PH1600-32 1600MHZ 470pF 015uF F--07 PO32 33J6 PH1600

    BVC71

    Abstract: BCV71R BCV71 BCV72 BCV72R DS42 S0T23 ctc4
    Text: BCV71 BCV72 S0T 23 NPN SILICON PLANAR SM ALL SIGNAL TRANSISTOR PA RT M A RKIN G DETAILS:BVC71 - K7 BCV72 - K8 BCV 71R - K6 BCV 72R - K9 ABSOLUTE M A X IM U M RATINGS PARAM ETER SYM BO L VALUE U N IT Collector-Base Voltage V CBO 80 V Collector-Em itter Voltage


    OCR Scan     		PDF S0T23 BCV71 BCV72 -BVC71 BCV71R BCV72R 35MHz BVC71 DS42 ctc4

    Transistor Manual GE

    Abstract: 2SA391 GE Transistor Manual
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF rc-25 10OnS 200Mc Transistor Manual GE 2SA391 GE Transistor Manual

    BFR92

    Abstract: BFR92A P1 BFR92A b41 Marking BFR92A Transistor BFR92 transistor
    Text: / = T SGS-THOMSON ^ 7 # MOrami@ra M©t BFR92 BFR92A SMALL SIGNAL NPN RF TRANSISTOR Type Marking BFR92 P1 BFR92A P2 . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . GOLD METALLIZED TRANSISTOR FOR


    OCR Scan     		PDF BFR92 BFR92A BFR92A OT-23 SC06960 BFR92/BFR92A OT-23 BFR92A P1 b41 Marking BFR92A Transistor BFR92 transistor

    cl 740

    Abstract: tss405 PO65 7w RF POWER TRANSISTOR NPN PH1600
    Text: n,n/A-con p h asE D o ÜDDDSbô 1T7 • HA P T - 33-01 M /A -C O M PH I, IN C . 1742 CRENSHAW BLVD. TORRANCE, CALIFORNIA 90501 213 320-6160 TWX 910-349-6651 FAX 213-618-9191 M/A-COM PHI, INC. PRELIMINARY DATA SHEET BIPOLAR NPN RF POWER TRANSISTOR FEATURES


    OCR Scan     		PDF PH1600-6 Sb4250S 00DDS71 1600MHZ 21-Z12 470pF 015uF cl 740 tss405 PO65 7w RF POWER TRANSISTOR NPN PH1600

    2SB546

    Abstract: 2SB541 2SB542 138B 2SB544 2SB547 2SD386
    Text: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF Tr--25 2SB546 2SB541 2SB542 138B 2SB544 2SB547 2SD386

    transistor K 1413

    Abstract: D 1413 transistor MARKING NJ CODE SOT 23 k 1413 FET sf-471 TRANSISTOR D 471 BF471S BF469S BF470S S110
    Text: .I TELEFUNKEN ELECTRONIC 17E D • ÛTSOCHb o o o i m i BF 469Ö BF 471 S ‘¡nUilPMKIKi electronic Creaiiv* techootojK» T * 3 2 -O S “ Silicon NPN Epitaxial Planar RF Transistors Applications: Video B-class power stages in TV-receivers Features: • BF 469 S complementary to BF470S


    OCR Scan     		PDF BF470S DIN41 BF469S T0126 15A3DIN transistor K 1413 D 1413 transistor MARKING NJ CODE SOT 23 k 1413 FET sf-471 TRANSISTOR D 471 BF471S BF469S BF470S S110

    ELTEC INSTRUMENTS

    Abstract: No abstract text available
    Text: 414 Series Opposed Dual Pyroelectric IR Detector with Source Follower E LH T E C Manufactured under one or more of the following US patents 3,839.640 - 4.218,620 - 4.326,663 - 4,384207 - 4,437,003 4,441,023 - 4.523,095 .040 SPACING r T 1.0 ELEMENT T.O080


    OCR Scan     		PDF 1000jxm ELTEC INSTRUMENTS

    BF441

    Abstract: BF509 BF 184 transistor BF 145 transistor BF440 BF 145 BF680 transistor BF 509 BFS20 BFS62
    Text: RF transistors Type Structure Silicon transistors Fifl. Nr. Maximum ratings Characteristics A c t a* I q anc ^CE V mA f j at MHz 48-167 1 10 a 27 4 10 7 a 38 67-220 1 36-125 1 10 30 25 £27 40 40 c iire a UCB V PF 230 1 0.65 10 350 4 0.15 10 550 260 200 5


    OCR Scan     		PDF BFS20 BFS62 BFX89 BFY88O BF441 BF509 BF 184 transistor BF 145 transistor BF440 BF 145 BF680 transistor BF 509

    Transistors BF 324

    Abstract: AM-FM TUNER BF252 UHF "AGC Amplifier" AGC Amplifiers radio diode SR 506 "AGC Amplifier" bf 245 fa 506 bf 233
    Text: CONSUMER TRANSISTORS IF amplifiers @ o o m LU U ai > > and @ ÍD < < O < E I- C3 CL Q_ @ □ a . BF 158 NPN IF a m p lifie r fo r T V BF 160 NPN IF a m p lifie r fo r AM -FM radio 12 12 BF 167 NPN AG C-l F a m p lifie r fo r T V 30 BF 173 NPN IF vision am p-output stage


    OCR Scan     		PDF T0-18 00U1CJ1CJ10 O-7211) Transistors BF 324 AM-FM TUNER BF252 UHF "AGC Amplifier" AGC Amplifiers radio diode SR 506 "AGC Amplifier" bf 245 fa 506 bf 233

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFQ 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF Q62702-F1049 OT-23 900MHz