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Rochester Electronics LLC MRF9080R5 75W RF PWR LDMOS NI780
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DigiKey	MRF9080R5	Bulk			6	1 - 10 $59.62 100 $59.62 1000 $59.62 10000 $59.62	Buy Now
Freescale Semiconductor MRF9080R5 MRF9080 - 75W RF PWR LDMOS NI780
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Rochester Electronics	MRF9080R5		26		1	1 $57.33 10 $57.33 100 $53.89 1000 $48.73 10000 $48.73	Buy Now

MRF9080 Datasheets (13)

Part	Manufacturer	Description	Datasheet Type	PDF
MRF9080	Freescale Semiconductor	MRF9080LR3, MRF9080LSR3 GSM 900 MHz Frequency Band, 75 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs	Original	PDF
MRF9080	Motorola	RF Power Field-Effect Transistor	Original	PDF
MRF9080	Motorola	MRF9080 GSM 900 MHz, 75 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs	Original	PDF
MRF9080LR3	Freescale Semiconductor	GSM 900 MHz, 75 W, 26 V Lateral N-Channel Broadband RF Power MOSFET	Original	PDF
MRF9080LR3	Freescale Semiconductor	75W 960MHZ 26V NI780L	Original	PDF
MRF9080LSR3	Freescale Semiconductor	GSM 900 MHz, 75 W, 26 V Lateral N-Channel Broadband RF Power MOSFET	Original	PDF
MRF9080LSR3	Motorola	RF Power Field-Effect Transistor	Original	PDF
MRF9080LSR3	Motorola	RF POWER FIELD EFFECT TRANSISTORS	Original	PDF
MRF9080R3	Motorola	RF Power Field-Effect Transistor	Original	PDF
MRF9080R3	Motorola	RF POWER FIELD EFFECT TRANSISTORS	Original	PDF
MRF9080S	Motorola	GSM 900 MHZ, 75 W, 26 V RF POWER	Original	PDF
MRF9080SR3	Motorola	RF Power Field-Effect Transistor	Original	PDF
MRF9080SR3	Motorola	RF POWER FIELD EFFECT TRANSISTORS	Original	PDF

MRF9080 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−	Original	MRF9080 MRF9080LR3 MRF9080LSR3	PDF
marking WB1 sot-23 Abstract: marking WB2 sot-23 transistor WB1 Text: Document Number: MRF9080 Rev. 7, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9080LSR3 Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large-signal, common-source	Original	MRF9080 MRF9080LSR3 marking WB1 sot-23 marking WB2 sot-23 transistor WB1	PDF
MRF9080LSR3 Abstract: 293D106X9035D2T MRF9080LR3 100B0R8BW Micron Semiconductor C1522 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9080LR3 MRF9080LSR3 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs	Original	MRF9080/D MRF9080LR3 MRF9080LSR3 MRF9080LR3 MRF9080LSR3 293D106X9035D2T 100B0R8BW Micron Semiconductor C1522	PDF
marking WB1 sot-23 Abstract: marking WB2 sot-23 MARKING J3 SOT-23 CRCW08051001FKEA wb1 sot-23 ATC100B220GT500XT WB1 SOT23 22 pf capacitor datasheet ATC100B220GT500X MARKING WB1 Text: Document Number: MRF9080 Rev. 8, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF9080LR3 LIFETIME BUY Designed for GSM 900 MHz frequency band, the high gain and broadband	Original	MRF9080 MRF9080LR3 marking WB1 sot-23 marking WB2 sot-23 MARKING J3 SOT-23 CRCW08051001FKEA wb1 sot-23 ATC100B220GT500XT WB1 SOT23 22 pf capacitor datasheet ATC100B220GT500X MARKING WB1	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF9080 Rev. 8, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9080LR3 LIFETIME BUY Designed for GSM 900 MHz frequency band, the high gain and broadband	Original	MRF9080 MRF9080LR3	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF MOSFET Line MRF9080 MRF9080S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs	Original	MRF9080 MRF9080S MRF9080 RDMRF9080GSM	PDF
marking WB1 sot-23 Abstract: marking WB2 sot-23 293D106X9035D2T MRF9080 MRF9080LR3 MRF9080LSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF9080 Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9080LR3 MRF9080LSR3 Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment.	Original	MRF9080 MRF9080LR3 MRF9080LSR3 MRF9080LR3 marking WB1 sot-23 marking WB2 sot-23 293D106X9035D2T MRF9080 MRF9080LSR3	PDF
marking WB1 sot-23 Abstract: marking WB2 sot-23 ATC100B220GT500XT MRF9080 MRF9080LR3 T491D106M035AT Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9080LR3 LIFETIME BUY Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common - source	Original	MRF9080LR3 MRF9080 marking WB1 sot-23 marking WB2 sot-23 ATC100B220GT500XT MRF9080 MRF9080LR3 T491D106M035AT	PDF
WB1 SOT23 Abstract: transistor WB1 100B100JW TLX8-0300 capacitor 30 mf WB2 SOT23 08053G105ZATEA 100B4R7BW Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband	Original	MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 WB1 SOT23 transistor WB1 100B100JW TLX8-0300 capacitor 30 mf WB2 SOT23 08053G105ZATEA 100B4R7BW	PDF
u1 voltage regulator Abstract: MRF9080 MRF9080LSR3 MRF9080R3 MRF9080SR3 Text: MOTOROLA Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband	Original	MRF9080/D MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 MRF9080 MRF9080R3 MRF9080SR3MRF9080LSR3 u1 voltage regulator MRF9080LSR3 MRF9080SR3	PDF
marking WB1 sot-23 Abstract: marking WB2 sot-23 WB1 SOT23 R125510 WB1 MARKING SOT-23 sot-23 wb2 Text: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−	Original	MRF9080 MRF9080LR3 MRF9080LSR3 marking WB1 sot-23 marking WB2 sot-23 WB1 SOT23 R125510 WB1 MARKING SOT-23 sot-23 wb2	PDF
marking WB1 sot-23 Abstract: WB1 SOT23 WB1 MARKING SOT-23 marking WB2 sot-23 Text: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−	Original	MRF9080 MRF9080LR3 MRF9080LSR3 marking WB1 sot-23 WB1 SOT23 WB1 MARKING SOT-23 marking WB2 sot-23	PDF
capacitor 0805 avx Abstract: Motorola Base Station motorola transistor 912 MOTOROLA ELECTROLYTIC CAPACITOR Motorola Potentiometer TLX8-0300 wb1 sot package sot-23 MRF9080 MRF9080LSR3 MRF9080R3 Text: MOTOROLA Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080S MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband	Original	MRF9080/D MRF9080 MRF9080R3 MRF9080S MRF9080SR3 MRF9080LSR3 MRF9080 MRF9080R3 MRF9080S MRF9080SR3 capacitor 0805 avx Motorola Base Station motorola transistor 912 MOTOROLA ELECTROLYTIC CAPACITOR Motorola Potentiometer TLX8-0300 wb1 sot package sot-23 MRF9080LSR3	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9080LR3 MRF9080LSR3 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband	Original	MRF9080/D MRF9080LR3 MRF9080LSR3 MRF9080/D	PDF

resistor 0805 Abstract: J338 Text: MOTOROLA Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080S MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband	Original	MRF9080/D MRF9080 MRF9080R3 MRF9080S MRF9080SR3 MRF9080LSR3 MRF9080/D resistor 0805 J338	PDF
WB1 SOT23 Abstract: MRF9080 MRF9080LSR3 MRF9080R3 MRF9080SR3 sps 953 transistor data Text: MOTOROLA Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband	Original	MRF9080/D MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 MRF9080 MRF9080R3 MRF9080SR3MRF9080LSR3 WB1 SOT23 MRF9080LSR3 MRF9080SR3 sps 953 transistor data	PDF
MRF9080 Abstract: MRF9080S 08053G105ZATEA Text: MOTOROLA Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9080 MRF9080S N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband	Original	MRF9080/D MRF9080 MRF9080S MRF9080 MRF9080S 08053G105ZATEA	PDF
gsm 900 amplifier Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9080 MRF9080S N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large–signal, common–	Original	MRF9080 MRF9080S gsm 900 amplifier	PDF
MRF9130 Abstract: MRF9030L MRF9060 MRF9135LSR3 Text: Chapter Five Motorola RF Transistors – Data Sheets Device Number Page Number Device Number Page Number MBC13900 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5–3 MRF9080LSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	MBC13900 MRF281SR1 MRF281ZR1 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 MRF5P21180 MRF21180 MRF21180S MRFG35003M6T1 MRF9130 MRF9030L MRF9060 MRF9135LSR3	PDF
0805 capacitor 10 pf Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment.	Original	MRF9080LR3 MRF9080LSR3 0805 capacitor 10 pf	PDF
48v, 20 amp lead acid battery charger circuit diagram Abstract: BLUERAY DSP schematic diagram 48v battery charger lead acid radar using ultrasonic sensor LM35 sensor projects Blue-ray laser circuit diagram dvd writer laser diode 2N4401 ISL5857 ISL21400 Text: ISL21400 Programmable Temperature Slope Voltage Reference Application Note January 16, 2009 AN1446.0 Introduction Why the ISL21400? In the real world, many physical processes and measurements have a strong dependence on their local temperature. For example, in ultrasonic distance	Original	ISL21400 AN1446 ISL21400? ISL21400, 48v, 20 amp lead acid battery charger circuit diagram BLUERAY DSP schematic diagram 48v battery charger lead acid radar using ultrasonic sensor LM35 sensor projects Blue-ray laser circuit diagram dvd writer laser diode 2N4401 ISL5857	PDF
stripline directional couplers Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1 Text: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,	Original	SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1	PDF
TRANSISTOR REPLACEMENT GUIDE Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor Text: Quarter 4, 2004 SG1009Q42004 Rev 0 What’s New! Market Product 900 MHz Cellular Base Station MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, MRF9200LR3, MRF9200LSR3 CDMA 1.9 GHz Cellular Base Station	Original	SG1009Q42004 MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, TRANSISTOR REPLACEMENT GUIDE FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor	PDF
2a258 transistor Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii	Original	DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index	PDF

MRF9080 Search Results

MRF9080 Price and Stock

Rochester Electronics LLC MRF9080R5

Freescale Semiconductor MRF9080R5

MRF9080 Datasheets (13)

MRF9080 Datasheets Context Search

Untitled

marking WB1 sot-23

MRF9080LSR3

marking WB1 sot-23

Untitled

Untitled

marking WB1 sot-23

marking WB1 sot-23

WB1 SOT23

u1 voltage regulator

marking WB1 sot-23

marking WB1 sot-23

capacitor 0805 avx

Untitled

resistor 0805

WB1 SOT23

MRF9080

gsm 900 amplifier

MRF9130

0805 capacitor 10 pf

48v, 20 amp lead acid battery charger circuit diagram

stripline directional couplers

TRANSISTOR REPLACEMENT GUIDE

2a258 transistor