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    4200A Search Results

    4200A Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    ZMID4200AI1R Renesas Electronics Corporation Inductive Position Sensor IC Visit Renesas Electronics Corporation
    9684200A1H Amphenol Communications Solutions XCede HD, Backplane Connectors, Vertical Header, 4-pair, Power Module Visit Amphenol Communications Solutions
    958-4200-A1H Amphenol Communications Solutions XCede, High speed backplane connectors, 4-Pair, power, 1 up. Visit Amphenol Communications Solutions
    9584200A1J Amphenol Communications Solutions XCede, High speed backplane connectors, 4-Pair, power, 1 up. Visit Amphenol Communications Solutions
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    4200A Price and Stock

    KEMET Corporation C4GAMUD4200AA1J

    CAP FILM 2UF 5% 850VDC AXIAL
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    DigiKey C4GAMUD4200AA1J Bulk 523 1
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    KEMET Corporation C284ACA4200AL0J

    CAP FILM 2UF 5% 470VAC RADIAL
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    Amphenol Communications Solutions 958-4200-A1H

    XCEDE BP POWER, 4 PR
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    DigiKey 958-4200-A1H Tray 360 1
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    KEMET Corporation C274ACA4200AL0J

    CAP FILM 2UF 5% 470VAC RADIAL
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    KEMET Corporation C4AQSBU4200A1YJ

    CAP FILM 2UF 5% 1.5KVDC RADIAL
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    4200A Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    4200-A Brady Worldwide B915 4200-A WHT/BROWN STYLE A Original PDF
    4200AB51K00320 Laird Technologies RFI and EMI - Shielding and Absorbing Materials, RF/IF and RFID, GK NICU NRS PU V0 REC Original PDF
    4200ACC EMM Semi SEMI 4200 150 ns, Static, TTL IN/OUT, 4096 x 1 NMOS RAM Scan PDF
    4200ACC Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    4200ACD GTE Microcircuits 4096 x 1 NMOS TTL In/Out Static RAM Original PDF
    4200ACP GTE Microcircuits 4096 x 1 NMOS TTL In/Out Static RAM Original PDF
    4200ACP EMM Semi SEMI 4200 150 ns, Static, TTL IN/OUT, 4096 x 1 NMOS RAM Scan PDF
    4200ACP Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF

    4200A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SEPTEMBER 1996 DSF11060SG DS4217-2.3 DSF11060SG FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits. FEATURES ■ Double Side Cooling. ■ High Surge Capability. ■ Low Recovery Charge.


    Original     		PDF DSF11060SG DS4217-2 DSF11060SG60 DSF11060SG58 DSF11060SG56 DSF11060SG55 M779b.

    DS4217-2

    Abstract: ds4217 AN4506 DSF11060SG DSF11060SG55 DSF11060SG56 DSF11060SG58 DSF11060SG60 DSF110
    Text: DSF11060SG DSF11060SG Fast Recovery Diode Replaces March 1998 version, DS4217-2.4 DS4548 - 3.2 January 2000 KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs APPLICATIONS • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling


    Original     		PDF DSF11060SG DS4217-2 DS4548 DSF11060SG60 DSF11060SG58 DSF11060SG56 DSF11060SG55 M779b. ds4217 AN4506 DSF11060SG DSF11060SG55 DSF11060SG56 DSF11060SG58 DSF11060SG60 DSF110

    MAX4200

    Abstract: No abstract text available
    Text: * MAX4200 CLOSED-LOOP GAIN AVCL=+1 RESPONSE TEST CIRCUIT * 4200AVCL.CIR * XAR1 1 2 3 4 MAX4200 * +IN VCC VEE OUT VCC 2 0 5V VEE 3 0 -5V VIN 1 0 AC 50mV RL 4 0 100 *CL 1 0 20p .OPTIONS RELTOL=.01 .AC DEC 10 10k 10G .PROBE .LIB MAX4200.FAM .END


    Original     		PDF MAX4200 4200AVCL MAX4200

    O-4000AT

    Abstract: 414x
    Text: ROHS-Compliant Product O-4000AT Series 1. Specification Frequency range: 5.0 . 100.0 MHz Type: Supply voltage V S: O-4100AT O-4200AT 5.0 V ± 5 % 3.3 V ± 5 % 410x 420x 411x 421x 412x 422x 413x 423x 414x 424x 41x1 41x2 41x3 42x1 42x2 42x3 Frequency stability vs. temperature options:


    Original     		PDF O-4000AT O-4100AT O-4200AT AA-QM-200 BF171-IS-S11 D-74924 O-4000AT 414x

    DSF11060SG

    Abstract: 1000A 100V power diode DSF11060SG60 M779b DSF11060SG55 DSF11060SG56 DSF11060SG58 DS4548
    Text: DSF11060SG DSF11060SG Fast Recovery Diode Replaces January 2000 version, DS4217-3.0 DS4548-4.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling


    Original     		PDF DSF11060SG DS4217-3 DS4548-4 DSF11060SG60 DSF11060SG58 DSF11060SG56 DSF11060SG55 M779b. DSF11060SG 1000A 100V power diode DSF11060SG60 M779b DSF11060SG55 DSF11060SG56 DSF11060SG58 DS4548

    1000A 100V power diode

    Abstract: No abstract text available
    Text: DSF11060SG DSF11060SG Fast Recovery Diode Replaces January 2000 version, DS4217-3.0 DS4548-4.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling


    Original     		PDF DSF11060SG DS4217-3 DS4548-4 DSF11060SG60 DSF11060SG58 DSF11060SG56 DSF11060SG55 M779b. 1000A 100V power diode

    Untitled

    Abstract: No abstract text available
    Text: DSF11060SG DSF11060SG Fast Recovery Diode Replaces January 2000 version, DS4217-3.0 DS4548-4.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling


    Original     		PDF DSF11060SG DS4217-3 DS4548-4 DSF11060SG60 DSF11060SG58 DSF11060SG56 DSF11060SG55 M779b.

    a 3760

    Abstract: DRD420D DRD420D12 DRD420D14 DRD420D16 DRD420D18
    Text: DRD420D DRD420D Rectifier Diode Target Information DS5517-1.0 February 2002 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 1800V ■ High Surge Capability IF AV 4200A IFSM 70000A APPLICATIONS ■ Rectification ■ Freewheel Diode ■ DC Motor Control


    Original     		PDF DRD420D DS5517-1 0000A DRD420D18 DRD420D16 DRD420D14 DRD420D12 DO200AD a 3760 DRD420D DRD420D12 DRD420D14 DRD420D16 DRD420D18

    GT3180

    Abstract: GS7070 VC45210-PBC80 helium 210-80 vc45210 VIRATA helium 210-80 VC-45210-PBC80 virata helium VIRATA helium gt3180 G992
    Text: Product Specification of ADW-4200 Networking & Communication Product Specification ADSL Wireless VPN / Firewall Router ADW-4200A / ADW-4200B Version 1.0 This document contains confidential proprietary information and is property of PLANET. The contents of this


    Original     		PDF ADW-4200 ADW-4200A ADW-4200B ADW-4200 EN55022 EN55024 000Hrs 40degree MIL-STD-781C GT3180 GS7070 VC45210-PBC80 helium 210-80 vc45210 VIRATA helium 210-80 VC-45210-PBC80 virata helium VIRATA helium gt3180 G992

    SFB1060-01

    Abstract: SFB1030-01 ach 50 sfb1030 SFB1060-03 aircraft SFB1030-03
    Text: Fast-Acting Aircraft Limiter ACH Series Dimensions - in mm A D BUSS C 30 ACH B Catalog Symbol: ACH Fast-Acting Ratings: Amps: 1 to 60A Volts: 208Vac 125Vdc Interrupting Ratings: 6000A @ 120Vac 4200A @ 208Vac 6000A @ 125Vac 0.98" .425" (25.0mm) (10.8mm) 0.19"


    Original     		PDF 208Vac 125Vdc 120Vac 125Vac SFB1060-01 SFB1030-01 ach 50 sfb1030 SFB1060-03 aircraft SFB1030-03

    1000A 100V power diode

    Abstract: DSF11060SG DSF11060SG55 DSF11060SG56 DSF11060SG58 DSF11060SG60
    Text: DSF11060SG DSF11060SG Fast Recovery Diode Replaces March 1998 version, DS4217-2.4 DS4548 - 3.2 January 2000 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling


    Original     		PDF DSF11060SG DS4217-2 DS4548 DSF11060SG60 DSF11060SG58 DSF11060SG56 DSF11060SG55 M779b. 1000A 100V power diode DSF11060SG DSF11060SG55 DSF11060SG56 DSF11060SG58 DSF11060SG60

    a 3760

    Abstract: AN4839 DRD420D DRD420D12 DRD420D14 DRD420D16 DRD420D18
    Text: DRD420D DRD420D Rectifier Diode Target Information DS5517-1.0 February 2002 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 1800V ■ High Surge Capability IF AV 4200A IFSM 70000A APPLICATIONS ■ Rectification ■ Freewheel Diode ■ DC Motor Control


    Original     		PDF DRD420D DS5517-1 0000A DRD420D18 DRD420D16 DRD420D14 DRD420D12 DO200AD a 3760 AN4839 DRD420D DRD420D12 DRD420D14 DRD420D16 DRD420D18

    5900AS

    Abstract: 1600AS TP3B476 6500AS 6300AS 2500AS 6700as TP3E107 3800as
    Text: TP3 www.vishay.com Vishay Sprague Solid Tantalum Surface Mount Chip Capacitors TANTAMOUNT Molded Case, High Performance, Automotive Grade FEATURES • AEC-Q200 qualified • Low ESR • 100 % surge current tested B, C, D, and E case sizes • High ripple current carrying capability


    Original     		PDF AEC-Q200 QC300801/US0001 EIA535BAAC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 5900AS 1600AS TP3B476 6500AS 6300AS 2500AS 6700as TP3E107 3800as

    Untitled

    Abstract: No abstract text available
    Text: SEMiX303GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 466 A Tc = 80°C 359 A 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 338 A Tc = 80°C 252 A 900 A -40 . 175 °C ICRM = 3xICnom VGES


    Original     		PDF SEMiX303GB12T4s

    bsm 256

    Abstract: igbt module bsm 300 Al2O3
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 300 GB 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TP3 www.vishay.com Vishay Sprague Solid Tantalum Surface Mount Chip Capacitors TANTAMOUNT Molded Case, High Performance, Automotive Grade FEATURES • AEC-Q200 qualified • Low ESR • 100 % surge current tested B, C, D, and E case sizes • High ripple current carrying capability


    Original     		PDF AEC-Q200 QC300801/US0001 EIA535BAAC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    MS28937-40

    Abstract: ACH30 MS28937-05 MS28937-60 MS28938-25 MS28937-10 MS28937-50 MS28938-15 MIL-F-5373 ACH15
    Text: Bussmann Aircraft Limiter ACH Fast-Acting Dimensional Data All other tolerances ± 0.005 in (± 0.13) mm A D BUSS Catalog Symbol: ACH Fast-Acting Ampere Rating: 1 to 60 Amperes Voltage Rating: 208 Volts AC 125 Volts DC Interrupting Rating: 6000A @ 120 VAC


    Original     		PDF MIL-F-5372C MS28938-02 MS28938-25 ACH25 MS28938-03 MS28937-30 SB98107 MS28937-40 ACH30 MS28937-05 MS28937-60 MS28938-25 MS28937-10 MS28937-50 MS28938-15 MIL-F-5373 ACH15

    NTE6108

    Abstract: "Battery Chargers" NTE6102 NTE6103 NTE6104 NTE6105 NTE6109
    Text: NTE6102 thru NTE6109 Industrial Rectifier, 550A Features: D Standard and Reverse Polarities D Flag Lead and Stud Top Terminals D High Surge Current Ratings D High Rated Blocking Voltages Applications: D Welders D Battery Chargers D Electrochemical Refining


    Original     		PDF NTE6102 NTE6109 NTE6102, NTE6103* NTE6104, NTE6105* NTE6108, NTE6109* 360in. NTE6108 "Battery Chargers" NTE6103 NTE6104 NTE6105 NTE6109

    Untitled

    Abstract: No abstract text available
    Text: GEC P L E S S E Y 3 SEM ICONDUCTORS i DS4217-2.3 D S F 1 1 0 6 0 S G FAST RECOVERY DIODE APPLICATIONS • KEY PARAMETERS 6000V RRM 400A Jf AV 4200A FSM 700(iC Qr 6.0|iS v Snubber Diode For G TO Circuits. FEATURES ■ Double Side Cooling. ■ High Surge Capability.


    OCR Scan     		PDF DS4217-2 DSF11060SG60 DSF11060SG58 DSF11060SG56 DSF11060SG55 00A/HS 10OOA/ns, 37bfl522 DD3D17fl DSF11060SG

    DS4217-2

    Abstract: No abstract text available
    Text: @ M ITEL DSF11060SG Fast Recovery Diode SE M IC O N D U C T O R Supersedes Septem ber 1996 version, DS4217 - 2.3 D S 4 2 1 7 -2 .4 March 1998 APPLICATIONS KEY PARAMETERS • ^rrm Snubber Diode For GTO Circuits. 6000V ^f a v 4 0 0 A 'f s m 4200A Qr 700|iC


    OCR Scan     		PDF DS4217 DSF11060SG DSF11060SG60 DSF11060SG58 DSF11060SG56 DSF11060SG55 M779b. DS4217-2

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS 42E INC D ? cib4142 O Ü l l l S T KM 23C 4200A 4 • CMOS MASK ROM 4M-Bit 512K x 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Swltchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144x18 • Fast access time: 120ns (max.)


    OCR Scan     		PDF ib4142 8/256K 144x18 120ns 40-pin 23C4200A KM23C4200A 23C4200A)

    RC4200

    Abstract: RC4200A rc4200 raytheon HC1200 RM4200 NJM4200 RV4200 150M
    Text: - 190- RC4 2 0 0 n S H Ïü R ay th eo r T 0= 2 5 ° c • —22 V : —5 5 ~ + 125cC (R M 4 2 0 0 /R M 4 2 0 0 A ) —5mA - 4 0 ~ + 8 5 t : ( R V 4 2 0 0 /R V 4200A ) 0 ~ + 7 0 t : ( R C 4200/R C 4200A ) •f*D 500mW : —6 5 ~ + 1 5 0 cC (RM4200/4200A)


    OCR Scan     		PDF RC4200 NJM4200 500mW hl25t RM4200/RM4200A) RV4200/RV4200A) RC4200/RC4200A) HC1200 RC4200A rc4200 raytheon RM4200 NJM4200 RV4200 150M

    Untitled

    Abstract: No abstract text available
    Text: @ M ITEL DSF11060SG Fast Recovery Diode S E M IC O N D U C T O R Supersedes Septem ber 1996 version, DS4217 - 2.3 D S 4 2 1 7 -2 .4 March 1998 APPLICATIONS KEY PARAMETERS • ^ rrm S nubber Diode For GTO C ircuits. IF AV IFSM 6000V 400A 4200A Qr trr 700(iC


    OCR Scan     		PDF DS4217 DSF11060SG 1060S M779b.

    BEL 1240

    Abstract: No abstract text available
    Text: Raytheon Electronics Semiconductor Division RC4200 A n a lo g M u ltip lie r Features Multiply, divide, square, square root, RMS-to-DC conversion, AGC and modulate/demodulate Wide bandwidth - 4 MHz Signal-to-noise ratio - 94 dB • High accuracy • Nonlinearity-0 .1 %


    OCR Scan     		PDF RC4200 RC4200 250jlA RC4200N RC4200AN RM4200D RM4200AD RM4200AD/883B ci73LiO BEL 1240