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    14Q7

    Abstract: No abstract text available
    Text: K3P4C1000D-D G C CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 Words / 8 bytes page access


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    PDF K3P4C1000D-D /512Kx16) 100ns K3P4C1000D-DC 42-DIP-600 K3P4C1000D-GC 44-SOP-600 K3P4C1000DD 14Q7

    MASK ROM 32M PROGRAM

    Abstract: K3N6C4000E-DC mask rom A2034
    Text: K3N6C4000E-DC CMOS MASK ROM 32M-Bit 2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152x16 bit organization • Fast access time 100ns(Max.) : CL=50pF 120ns(Max.) : CL=100pF • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.)


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    PDF K3N6C4000E-DC 32M-Bit 2Mx16) 152x16 100ns 120ns 100pF 42-DIP-600 K3N6C4000E-DC MASK ROM 32M PROGRAM mask rom A2034

    Untitled

    Abstract: No abstract text available
    Text: K3N5V U 1000E-D(G)C CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF


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    PDF 1000E-D 16M-Bit /1Mx16) 100ns 120ns 100pF 1000E-DC 42-DIP-600

    A94-10

    Abstract: 4000E
    Text: K3N6V U 4000E-DC CMOS MASK ROM 32M-Bit (2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152x16 bit organization • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF • Supply voltage : single +3.0V/ single +3.3V


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    PDF 4000E-DC 32M-Bit 2Mx16) 152x16 100ns 120ns 100pF A94-10 4000E

    Untitled

    Abstract: No abstract text available
    Text: K3P5C1000D-D G C CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) 8 Words / 16 Bytes page access


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    PDF K3P5C1000D-D 16M-Bit /1Mx16) 100ns 150mA K3P5C1000D-DC 42-DIP-600 K3P5C1000D-GC 44-SOP-600

    Untitled

    Abstract: No abstract text available
    Text: KM23C16005D G CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) 8 Words / 16 Bytes page access


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    PDF KM23C16005D 16M-Bit /1Mx16) 100ns 150mA KM23C16000D 42-DIP-600 KM23C16005DG 44-SOP-600

    Untitled

    Abstract: No abstract text available
    Text: K3N4V U 1000D-D(G)C CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.)


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    PDF 1000D-D /512Kx16) 100ns 120ns 1000D-DC 42-DIP-600 1000D-GC 44-SOP-600 42-DIP-600

    Untitled

    Abstract: No abstract text available
    Text: KM23V8105D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Random access time/Page Access Time 3.3V Operation : 100/30ns(Max.) 3.0V Operation : 120/40ns(Max.)


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    PDF KM23V8105D /512Kx16) 100/30ns 120/40ns KM23V8105D 42-DIP-600 KM23V8105DG 44-SOP-600 42-DIP-600)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS MASK ROM KM23V16000D G 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +3.0V/ single +3.3V


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    PDF KM23V16000D 16M-Bit /1Mx16) 100ns KM23V16000D 42-DIP-600 KM23V16000DG 44-SOP-600 576x16

    km23c8105

    Abstract: km23c8105dg
    Text: KM23C8105D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 Words / 8 bytes page access


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    PDF KM23C8105D /512Kx16) 100ns KM23C8105D 42-DIP-600 KM23C8105DG 44-SOP-600 200MAX km23c8105 km23c8105dg

    Q321

    Abstract: km23c160
    Text: Preliminary CMOS MASK ROM KM23C16000D G 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time Random Access : 100ns(Max.) • Supply voltage : single +5V


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    PDF KM23C16000D 16M-Bit /1Mx16) 100ns KM23C16000D 42-DIP-600 KM23C16000DG 44-SOP-600 Q321 km23c160

    KM23C32120C-10

    Abstract: KM23C32120C-12 KM23C32120C-15
    Text: KM23C32120C CMOS MASK ROM 32M-Bit 4Mx8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • 4,194,304 x 8 bit organization Fast access time : 100ns(Max.) Supply voltage : single +5V Current consumption Operating : 50mA(Max.) Standby : 50 µA(Max.)


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    PDF KM23C32120C 32M-Bit 100ns 42-DIP-600 KM23C32120C 200MAX KM23C32120C-10 KM23C32120C-12 KM23C32120C-15

    44-sop

    Abstract: No abstract text available
    Text: KM23C16000D G CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time Random Access : 100ns(Max.) • Supply voltage : single +5V • Current consumption


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    PDF KM23C16000D 16M-Bit /1Mx16) 100ns KM23C16000D 42-DIP-600 KM23C16000DG 44-SOP-600 200MAX 44-sop

    Untitled

    Abstract: No abstract text available
    Text: K3N6C4000C-DC CMOS MASK ROM 32M-Bit 2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152x16 bit organization • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.)


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    PDF K3N6C4000C-DC 32M-Bit 2Mx16) 152x16 100ns 42-DIP-600 K3N6C4000C-DC

    Untitled

    Abstract: No abstract text available
    Text: K3P5V U 1000D-D(G)C CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) 8 Words / 16 Bytes page access


    Original
    PDF 1000D-D 16M-Bit /1Mx16) 100ns 1000D-DC 42-DIP-600 1000D-GC 44-SOP-600

    Untitled

    Abstract: No abstract text available
    Text: K3N5V U 1000D-D(G)C CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +3.0V/ single +3.3V


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    PDF 1000D-D 16M-Bit /1Mx16) 100ns 1000D-DC 42-DIP-600 1000D-GC 44-SOP-600 576x16

    Untitled

    Abstract: No abstract text available
    Text: KM23C32000A CMOS Ma sk ROM ELECTRONICS 32M-Bit 2M X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C32000A is a fully static mask programmable ROM organized 2,097,152x16bit.lt is fabricated using silicon-gate CMOS process technology.


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    PDF KM23C32000A 32M-Bit KM23C32000A 152x16bit 42-DIP 16bit

    23c64000

    Abstract: 64M-BIT ROM 2710
    Text: CMOS MASK ROM KM23C64000 64M-Bit 4Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM 23C64000 is a fully static mask program m able ROM • • • • 4,194,304 x 16 bit organization Fast access tim e : 120ns(Max.) Supply voltage : single +5V


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    PDF KM23C64000 64M-Bit 4Mx16) 120ns 23C64000 42-DIP-600 23C64000 42-DIP-600) 64M-BIT ROM 2710

    23C8100DG

    Abstract: No abstract text available
    Text: KM23C8100D G CMOS MASK ROM 8M-Bit (1Mx8 512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 100ns(Max.) • Supply voltage : single +5V • C urrent consumption


    OCR Scan
    PDF KM23C8100D 512Kx16) 100ns KM23C8100D 42-DIP-600 23C8100DG 44-SQP-600 23C8100D KM23C81 42-DIP-600) 23C8100DG

    Untitled

    Abstract: No abstract text available
    Text: KM23C32120C CMOS MASK ROM 32M-Bit (4Mx8 CM OS M ASK ROM FEATURES G E N E R A L DESC R IPT IO N • • • • The KM23C32120C is a lully static mask programmable R O M organized 4,194,304 x 8 bit. It is fabricated using slllcon-gate C M O S process technology.


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    PDF KM23C32120C 32M-Bit 100ns 42-DIP-600 KM23C32120C 100pF

    A18T

    Abstract: 23V8100DG
    Text: KM23V8100D G CMOS MASK ROM 8M-Bit (1Mx8 512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 3.3V operation : 100ns(M ax.) 3.0V operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V


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    PDF KM23V8100D 512Kx16) 100ns 120ns KM23V8100D 42-DIP-600 23V8100DG 44-SQ P-600 23V8100D A18T 23V8100DG

    Untitled

    Abstract: No abstract text available
    Text: KM23C8105D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION » Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time Random Access : 100ns{Max.) Page Access : 30ns{Max.) • 4 Words / 8 bytes page access


    OCR Scan
    PDF KM23C8105D /512Kx16) 100ns KM23C8105D 42-DIP-600 KM23C8105DG 44-SOP-6M KM23C81050 KM23C KM23C81QSD

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS MASK ROM KM23C32000C 32M-Bit 2Mx16 CMOS MASK ROM GENERAL DESCRIPTION FEATURES 12,097,152x16 bit organization 1 Fast access time : 100ns(Max.) 1Supply voltage : single +5V 1Current consumption Operating : 50mA(Max.) Standby : 50|^A(Max.)


    OCR Scan
    PDF KM23C32000C 32M-Bit 2Mx16) 152x16 100ns 42-DIP-600 KM23C32000C KM23C32000C-12

    Untitled

    Abstract: No abstract text available
    Text: K M 2 3 C 8 10 5 B G CMOS Mask ROM ELECTRONICS 8M-Bit (1M X 8/512K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16(word mode) • Fast access time Random Access: 100ns(max.) Page Access


    OCR Scan
    PDF 8/512K 100ns KM23C8105B 42-DIP-600 KM23C8105BG 44-SOP-600 KM23C8105B KM23C8105B)