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    KM23C81 Search Results

    KM23C81 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM23C8100D-12 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8100D-15 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8100DET-10 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8100DET-12 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8100DET-15 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8100DG-10 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8100DG-12 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8100DG-15 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8100DT-10 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8100DT-12 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8100DT-15 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8105D-10 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8105D-12 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8105D-15 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8105DET-10 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8105DET-12 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8105DG-10 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8105DG-12 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8105DG-15 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8105DT-10 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF

    KM23C81 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    km23c8105

    Abstract: km23c8105dg
    Text: KM23C8105D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 Words / 8 bytes page access


    Original     		KM23C8105D /512Kx16) 100ns KM23C8105D 42-DIP-600 KM23C8105DG 44-SOP-600 200MAX km23c8105 km23c8105dg PDF

    Untitled

    Abstract: No abstract text available
    Text: KM23C8100D E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption


    Original     		KM23C8100D /512Kx16) 100ns 44-TSOP2-400 44-TSOP2-400) PDF

    TSOP-23-5

    Abstract: SILICON General 741
    Text: KM23C8105D E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 Words / 8 bytes page access


    Original     		KM23C8105D /512Kx16) 100ns 44-TSOP2-400 TSOP-23-5 SILICON General 741 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM23C8105D E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 Words / 8 bytes page access


    Original     		KM23C8105D /512Kx16) 100ns 44-TSOP2-400 44-TSOP2-400) PDF

    U 324 SAMSUNG

    Abstract: KM23C8100BG 524288X16
    Text: SA MS UN G E L E C T R O N I C S INC b?E D • 7=11,4142 0G17DL.0 ÔT7 SM6K CMOS MASK ROM KM23C81 OOB G 8 M-BH ( 1M X 8 / 5 1 2 K X 16) C M O S M A S K R O M FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode)


    OCR Scan     		KM23C81 0G17DL 8/512K 100ns 42-pin, 44-pin, KM23C8100B KM23C8100B) KM23C8100BG) U 324 SAMSUNG KM23C8100BG 524288X16 PDF

    23C8100DG

    Abstract: No abstract text available
    Text: KM23C8100D G CMOS MASK ROM 8M-Bit (1Mx8 512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 100ns(Max.) • Supply voltage : single +5V • C urrent consumption


    OCR Scan     		KM23C8100D 512Kx16) 100ns KM23C8100D 42-DIP-600 23C8100DG 44-SQP-600 23C8100D KM23C81 42-DIP-600) 23C8100DG PDF

    Untitled

    Abstract: No abstract text available
    Text: KM23C8105D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION » Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time Random Access : 100ns{Max.) Page Access : 30ns{Max.) • 4 Words / 8 bytes page access


    OCR Scan     		KM23C8105D /512Kx16) 100ns KM23C8105D 42-DIP-600 KM23C8105DG 44-SOP-6M KM23C81050 KM23C KM23C81QSD PDF

    ci-42

    Abstract: No abstract text available
    Text: KM23C81 OOA G CMOS MASK ROM 8M-Bit (1M X 8 /5 1 2 K X 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption


    OCR Scan     		KM23C81 150ns 50jjA 42-pin, 44-pin, KM23C8100A KM23C8100A) KM23C8100AG) ci-42 PDF

    E5ex

    Abstract: No abstract text available
    Text: KM23C8100CET CMOS Mask ROM ELECTRONICS 8M-Bit 1 M X 8/512 K x 16 M-ROM(Extended Temperature Product) • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16(word mode) • Fast access time : 120ns(max.) • Supply voltage : single +5V • Current consumption


    OCR Scan     		KM23C8100CET 120ns 44-TSQP2-400 KM23C8100CET 576x8bit 288x16bit KM23C8100CET) E5ex PDF

    KM23C8100BG

    Abstract: No abstract text available
    Text: KM23C81 OOB G CMOS MASK ROM 8M-Bit (1M X 8 /5 1 2K X 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 100ns (max.) • Supply voltage: single + 5V • C urrent consumption


    OCR Scan     		KM23C81 100ns 50/jA 42-pin, 44-pin, KM23C8100B KM23C8100B) KM23C8100BG) KM23C8100BG PDF

    km23c8105bg

    Abstract: km23c8105 samsung ace
    Text: SAMSUNG ELECTRONICS INC b7E D • 7^4142 KM23C8105B G □G170b4 MME I SMGK CMOS MASK ROM 8M -Bit (1M x 8/512K x 16) CMOS M ASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time


    OCR Scan     		KM23C8105B 0017DbM x8/512Kx 100ns 42-pin, 44-pin, 17Db7 KM23C8105B) km23c8105bg km23c8105 samsung ace PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • 7^4142 KM23C81 OOA G DülTGSb 37b «SPICK CMOS MASK ROM 8M-Bit (1M X 8 /5 1 2K X 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.)


    OCR Scan     		KM23C81 150ns 42-pin, 44-pin, KM23C8100A D0170b7 KM23C8105B KM23C8105B) KM23C8105BG) PDF

    Untitled

    Abstract: No abstract text available
    Text: KM23C8100AFP2 CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2 K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itc h a b le o rg a n iza tio n 1 ,0 4 8 ,5 7 6 x 8 (b y te m o d e ) The KM23C8100AFP2 is a fully static mask programma­ ble ROM fabricated using silicon gate CMOS process


    OCR Scan     		KM23C8100AFP2 KM23C8100AFP2 150ns KM23C8100AFP2) PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS MASK ROM KM23C8100H 8M-Bit 1M X 8 /5 1 2 K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 100ns (max.) • Supply voltage: single + 5 V


    OCR Scan     		KM23C8100H 100ns 42-pin, 44-pin, KM23C8100H KM23C8100H) KM23C8100HG) PDF

    Untitled

    Abstract: No abstract text available
    Text: KM23C8105B G CMOS MASK HOM 8M-Bit (1M x 8/512 K x 16) CM O S M ASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8 (byte m ode) 524,288 x 16 (word mode) • F a st a c c e s s time R an do m a c c e ss: 100ns (max.) P a ge a c ce ss: 50 n s (max.)


    OCR Scan     		KM23C8105B 100ns 42-pin, 44-pin, KM23C8105B) KM23C8105BG) PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS MASK ROM KM23C8100FP2 8M-BH 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption


    OCR Scan     		KM23C8100FP2 150ns 64-pin KM23C81OOFP2 KM23C8100FP2) PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS MASK ROM KM23C81 OOD G 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 100ns(Max.) • Supply voltage : single +5V • Current consumption


    OCR Scan     		KM23C81 /512Kx16) 100ns 23C8100D 42-DIP-600 23C8100DG 44-SQP-600 23C8100D PDF

    Untitled

    Abstract: No abstract text available
    Text: KM23C8100AFP1 CMOS MASK ROM 8M-BH 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itc h a b le o rg a n iza tio n The KM23C8100AFP1 is a fully static mask programma­ ble ROM fabricated using silicon gate CMOS process technology, and is organized either as 1 ,0 4 8 ,5 7 6 X 8 bit


    OCR Scan     		KM23C8100AFP1 KM23C8100AFP1 KM23C8100AFP1) PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 4EE D B 7^4142 KM23C8100 GDlllb? 3 B S M 6 K CMOS MASK ROM 8M-Bit 1M X 8 /5 12K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.)


    OCR Scan     		KM23C8100 150ns 42-pin, 44-pin, KM23C8100 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM23C8100FP1 CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES Sw itchable organization 1,048,576 X B (byte mode) 524,288 x 16 (word mode) Fast access time: 150ns (max.) Supply voltage: single + 5V C urrent consumption O perating: 50m A (max.)


    OCR Scan     		KM23C8100FP1 150ns 44-pin KM23C8100FP1 KM23C8100FP1) PDF

    Untitled

    Abstract: No abstract text available
    Text: KM23C8100A CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1 ,0 4 8 ,5 7 6 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.) • Supply voltage: single + 5V • C urrent consumption


    OCR Scan     		KM23C8100A 150ns 42-pin, 44-pin, KM23C01OOA KM23C8100A) KM23C8100AG) PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • The KM23C8100HFP1 is a fully static mask program m a­ ble ROM fabricated using s ilic o n gate CMOS process technology, and is organized either as 1 ,0 4 8 ,5 7 6 X 8 bit


    OCR Scan     		100ns KM23C8100HFP1 KM23C81OOH KM23C8100HFP1) PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM23C8100HFP2 ^ CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2 K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itchable organization 1,048,576 X 6 (byte mode) 524,288 X 16 (word mode) • Fast access time: 100ns (max.) • Supply voltage: single + 5V


    OCR Scan     		KM23C8100HFP2 100ns 64-pin KM23C8100HFP2 KM23C81OOH KM23C8100HFP2) PDF

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC 45E 1 7^4142 KM23C8100FP1 0011171 S CMOS MASK ROM ÒM-Bit 1M X 8 / 5 1 2 K X 16) CMOS MASK ROM FEATURES S witchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) Fast access time: 150ns (max.) Supply voltage: single + 5V


    OCR Scan     		KM23C8100FP1 150ns 44-pin 8100FP DG11174. 23C8100FP1) PDF