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    Untitled

    Abstract: No abstract text available
    Text: KM23C8100AFP2 CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2 K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itc h a b le o rg a n iza tio n 1 ,0 4 8 ,5 7 6 x 8 (b y te m o d e ) The KM23C8100AFP2 is a fully static mask programma­ ble ROM fabricated using silicon gate CMOS process


    OCR Scan     		PDF KM23C8100AFP2 KM23C8100AFP2 150ns KM23C8100AFP2)

    Untitled

    Abstract: No abstract text available
    Text: KM23C8100AFP1 CMOS MASK ROM 8M-BH 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itc h a b le o rg a n iza tio n The KM23C8100AFP1 is a fully static mask programma­ ble ROM fabricated using silicon gate CMOS process technology, and is organized either as 1 ,0 4 8 ,5 7 6 X 8 bit


    OCR Scan     		PDF KM23C8100AFP1 KM23C8100AFP1 KM23C8100AFP1)

    Untitled

    Abstract: No abstract text available
    Text: KM23C8100A CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1 ,0 4 8 ,5 7 6 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.) • Supply voltage: single + 5V • C urrent consumption


    OCR Scan     		PDF KM23C8100A 150ns 42-pin, 44-pin, KM23C01OOA KM23C8100A) KM23C8100AG)

    Untitled

    Abstract: No abstract text available
    Text: CMOS MASK ROM KM23C8100A 8M-Bit 1M X 8 /5 1 2 K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itc h a b le o rg a n iz a tio n The KM23C8100A is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1 ,0 4 8 ,5 7 6 X 8 bit


    OCR Scan     		PDF KM23C8100A KM23C8100A 50piA KM23C8100A) KM23C8100AG)

    Untitled

    Abstract: No abstract text available
    Text: KM23C8100AFP1 CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES • S w itc h a b le o rg a n iz a tio n 1 ,0 4 8 ,5 7 6 x 8 (b y te m o d e ) 5 2 4 ,2 8 8 x 16 (w o rd m o d e ) • F a s t a c c e s s tim e : 150 n s im a x ) • S u p p ly v o lta g e : s in g le *t-5V


    OCR Scan     		PDF KM23C8100AFP1 23C8100AFP1 B100AFP1-20 KM23C8100AFH-25 KM23C8100AFP1)

    Untitled

    Abstract: No abstract text available
    Text: KM23C8100AFP2 CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2 K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itc h a b le o rg a n iza tio n The KM23C8100AFP2 is a fully sta tic mask program m a­ ble ROM fab ricate d using s ilic o n gate CMOS process technology, and is organized either as 1 ,0 4 8 ,5 7 6 X 8 bit


    OCR Scan     		PDF KM23C8100AFP2 KM23C8100AFP2 KM23C8100AFP2)

    ci-42

    Abstract: No abstract text available
    Text: KM23C81 OOA G CMOS MASK ROM 8M-Bit (1M X 8 /5 1 2 K X 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption


    OCR Scan     		PDF KM23C81 150ns 50jjA 42-pin, 44-pin, KM23C8100A KM23C8100A) KM23C8100AG) ci-42

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • 7^4142 KM23C81 OOA G DülTGSb 37b «SPICK CMOS MASK ROM 8M-Bit (1M X 8 /5 1 2K X 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.)


    OCR Scan     		PDF KM23C81 150ns 42-pin, 44-pin, KM23C8100A D0170b7 KM23C8105B KM23C8105B) KM23C8105BG)

    23C8001A

    Abstract: 23C8001 KM23C2001 2001h 23c4001
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3 4 II. EEPROM DATA SHEETS 1 2 3 4. 5 6. 7. 8. 9. 10 11. 12 13. 14. III. In tro d u ctio n. v -. 11 Product G uide. \ . 28


    OCR Scan     		PDF 32000G 32000FP. 23C32100G 32100FP 23C8001A 23C8001 KM23C2001 2001h 23c4001

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100

    K93C46

    Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257


    OCR Scan     		PDF 416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256

    TC55B8128

    Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6


    OCR Scan     		PDF TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256

    KM424C256Z

    Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100


    OCR Scan     		PDF KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C464P KM424C256Z KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ

    KMM591000AN

    Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
    Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC


    OCR Scan     		PDF KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P KMM591000AN KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble

    KM23C8001

    Abstract: 32-sop
    Text: MEMORY ICs FUNCTION GUIDE 2.6 MASK ROM Capacity Part Number Orgrization Speed ns Tech. Features Package Remark 256K KM23C256(G) 32Kx8 120/150/200 CMOS Programmable C E & OE 28DIP(32SOP) Now 512K KM23C512(G) 6 4 K *8 120/150/200 CMOS Programmable C E & O E


    OCR Scan     		PDF KM23C256 KM23C512 KC23C1000 KM23C1001 KM23C1010 KM23C1010J KM23C1011 32Kx8 128Kx 256KX KM23C8001 32-sop