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    42N170A Search Results

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    42N170A Price and Stock

    IXYS Corporation IXBH42N170A

    IGBT 1700V 42A TO247AD
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    DigiKey IXBH42N170A Tube 146 1
    • 1 $23.69
    • 10 $23.69
    • 100 $16.22
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    Mouser Electronics IXBH42N170A 340
    • 1 $23.69
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    • 100 $16.22
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    TTI IXBH42N170A Tube 300
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    TME IXBH42N170A 60 1
    • 1 $26.09
    • 10 $21.88
    • 100 $21.13
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    New Advantage Corporation IXBH42N170A 48 1
    • 1 -
    • 10 $43.56
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    IXYS Corporation IXBN42N170A

    IGBT MOD 1700V 42A 312W SOT227B
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    DigiKey IXBN42N170A Tube 300
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    Mouser Electronics IXBN42N170A
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    Bristol Electronics IXBN42N170A 178
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    TTI IXBN42N170A Tube 300
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    TME IXBN42N170A 4 1
    • 1 $40.53
    • 10 $33.96
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    New Advantage Corporation IXBN42N170A 16 1
    • 1 -
    • 10 $67.3
    • 100 $62.81
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    IXYS Corporation IXBT42N170A

    IGBT 1700V 42A TO268AA
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    DigiKey IXBT42N170A Tube 300
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    TTI IXBT42N170A Tube 300
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    • 10000 $17.91
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    TME IXBT42N170A 1
    • 1 $29.75
    • 10 $23.61
    • 100 $21.99
    • 1000 $21.99
    • 10000 $21.99
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    New Advantage Corporation IXBT42N170A 14 1
    • 1 -
    • 10 $51.32
    • 100 $51.32
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    Littelfuse Inc IXBH42N170A

    Disc Igbt Bimosfet-High Volt To-247Ad/ Tube |Littelfuse IXBH42N170A
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    Newark IXBH42N170A Bulk 300
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    RS IXBH42N170A Bulk 8 Weeks 30
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    Littelfuse Inc IXBN42N170A

    Discigbtbimosfet-Hivolt Sot-227B(Mini)/ Tube |Littelfuse IXBN42N170A
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    Newark IXBN42N170A Bulk 300
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    RS IXBN42N170A Bulk 8 Weeks 10
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    • 10 $40.54
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    42N170A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXBH 42N170A IXBT 42N170A BIMOSFETTM Monolithic Bipolar MOS Transistor Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient


    Original
    PDF 42N170A O-268 O-247) 728B1

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information VCES IC25 VCE sat tfi IXBH 42N170A IXBT 42N170A BIMOSFETTM Monolithic Bipolar MOS Transistor Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous


    Original
    PDF 42N170A 42N170A O-268 O-247 O-268 O-247) 728B1

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXBN 42N170A BIMOSFETTM Monolithic Bipolar MOS Transistor Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25


    Original
    PDF 42N170A 728B1

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information BIMOSFETTM Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi IXBH 42N170A IXBT 42N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous


    Original
    PDF 42N170A O-268 O-247) 728B1

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information BIMOSFETTM Monolithic Bipolar MOS Transistor IXBN 42N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25


    Original
    PDF 42N170A 728B1

    98933

    Abstract: E153432 IXBN42N170A
    Text: Advance Technical Information BIMOSFETTM Monolithic Bipolar MOS Transistor IXBN 42N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25


    Original
    PDF 42N170A 150ing 728B1 98933 E153432 IXBN42N170A

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original
    PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    50N60

    Abstract: 50N100 50n80 40N160 9N160G 50N6
    Text: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C


    OCR Scan
    PDF 9N140G 15N140 20N140 40N140 9N160G 15N160 20N160 50N60 50N100 50n80 40N160 50N6