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    Z04B

    Abstract: MR27V6441L MARK Z04D MR27V6441L-xxxMP Z04D 48TSOP2 ST03
    Text: OKI Semiconductor MR27V6441L PEDR27V6441L-02-03 Issue Date: April 4, 2005 Preliminary 64M x 1–Bit Serial Production Programmed ROM P2ROM GENERAL DESCRIPTION The MR27V6441L is a 64 Mbit Production Programmed Read-Only Memory, which is configured as 67,108,864 word × 1-bit. The MR27V6441L supports a simple read operation using a single 3.3V power supply


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    PDF MR27V6441L PEDR27V6441L-02-03 MR27V6441L 33MHz 20MHz 42SOJ 48BGA 28SOP Z04B MARK Z04D MR27V6441L-xxxMP Z04D 48TSOP2 ST03

    300b tube

    Abstract: 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64
    Text: Samsung Proprietary [ Shipping Quantity Information ] As of 2004-03-02 Divide DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM


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    PDF FBGA-11 24-SOJ-300 -SOJ-300 -TSOP2-300AF -SOJ-300B 28-SOJ-300 28-SOJ-300A 28-SOJ-400 300b tube 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64

    Z04B

    Abstract: MARK Z04D
    Text: FEDR27T1641L-02-H1 OKI Semiconductor MR27T1641L This version : Feb.28, 2005 Previous version: -.- 8M x 1–Bit Serial Production Programmed ROM P2ROM GENERAL DESCRIPTION The MR27T1641L is a 16 Mbit Production Programmed Read-Only Memory, which is configured as


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    PDF FEDR27T1641L-02-H1 MR27T1641L MR27T1641L 30MHz 20MHz 42SOJ 48BGA 28SOP Z04B MARK Z04D

    Untitled

    Abstract: No abstract text available
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


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    SOP40 eprom

    Abstract: SOP40 prom MR27V402E MR27V402EMP MR27V402ERP MR27V402ETP SOJ42-P-400-1
    Text: OKI Semiconductor MR27V402E FEDR27V402E-01-03 Issue Date: Jan. 15, 2004 262,144–Word x 16–Bit or 524,288–Word × 8–Bit One Time PROM GENERAL DESCRIPTION The MR27V402E is a 4 Mbit One Time Programmable Read-Only Memory that can be electrically switched


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    PDF MR27V402E FEDR27V402E-01-03 MR27V402E 144-word 16-bit 288-word 16-bit/524 SOP40 eprom SOP40 prom MR27V402EMP MR27V402ERP MR27V402ETP SOJ42-P-400-1

    Z04B

    Abstract: MARK Z04D
    Text: OKI Semiconductor MR27V1641L FEDR27V1641L-02-H1 Issue Date: April 21, 2006 16M x 1–Bit Serial Production Programmed ROM P2ROM GENERAL DESCRIPTION The MR27V1641L is a 16 Mbit Production Programmed Read-Only Memory, which is configured as 16,777,216 word × 1-bit. The MR27V1641L supports a simple read operation using a single 3.0V or 3.6V power


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    PDF MR27V1641L FEDR27V1641L-02-H1 MR27V1641L 30MHz 20MHz 42SOJ 48BGA 28SOP Z04B MARK Z04D

    MR27V402E

    Abstract: MR27V402EMP MR27V402ERP MR27V402ETP SOJ42-P-400-1
    Text: OKI Semiconductor MR27V402E FEDR27V402E-02-03 Issue Date: Jan.20, 2003 262,144–Word x 16–Bit or 524,288–Word × 8–Bit Production Programmed Read Only Memory P2ROM GENERAL DESCRIPTION The MR27V402E is a 4 Mbit Production Programmed Read-Only Memory (P2ROM ) that can be electrically


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    PDF MR27V402E FEDR27V402E-02-03 MR27V402E 144-word 16-bit 288-word 16-bit/524 MR27V402EMP MR27V402ERP MR27V402ETP SOJ42-P-400-1

    Z04B

    Abstract: MARK Z04D Z04D so-8 mark a18 MR27V3241L 40DIP 48TSOP2 CODE z04a
    Text: OKI Semiconductor MR27V3241L FEDR27V3241L-02-H2 Issue Date: April 4, 2005 32M x 1–Bit Serial Production Programmed ROM P2ROM GENERAL DESCRIPTION The MR27V3241L is a 32 Mbit Production Programmed Read-Only Memory, which is configured as 33,554,432 word × 1-bit. The MR27V3241L supports a simple read operation using a single 3.3V power supply


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    PDF MR27V3241L FEDR27V3241L-02-H2 MR27V3241L 50MHz 20MHz 42SOJ 48BGA 28SOP Z04B MARK Z04D Z04D so-8 mark a18 40DIP 48TSOP2 CODE z04a

    MR27V402E

    Abstract: SOP40 prom SOJ42-P-400-1.27 PACKAGE OUTLINE MR27V402EMP MR27V402ERP MR27V402ETP SOJ42-P-400-1
    Text: お客様各位 資料中の「沖電気」「OKI」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


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    PDF MR27V402E FEDR27V402E-01-03 MR27V402E 144-word 16-bit 288-word 16-bit/524 SOP40 prom SOJ42-P-400-1.27 PACKAGE OUTLINE MR27V402EMP MR27V402ERP MR27V402ETP SOJ42-P-400-1

    SOJ42-P-400-1.27 PACKAGE OUTLINE

    Abstract: MR27V402E MR27V402EMP MR27V402ERP MR27V402ETP SOJ42-P-400-1
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


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    Untitled

    Abstract: No abstract text available
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


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    MR27V402E

    Abstract: MR27V402EMP MR27V402ERP MR27V402ETP SOJ42-P-400-1
    Text: Discontinued Product OKI Semiconductor MR27V402E FEDR27V402E-02-03 Issue Date: Jan.20, 2003 262,144–Word x 16–Bit or 524,288–Word × 8–Bit Production Programmed Read Only Memory P2ROM GENERAL DESCRIPTION The MR27V402E is a 4 Mbit Production Programmed Read-Only Memory (P2ROM ) that can be electrically


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    PDF MR27V402E FEDR27V402E-02-03 MR27V402E 144-word 16-bit 288-word 16-bit/524 MR27V402EMP MR27V402ERP MR27V402ETP SOJ42-P-400-1

    MR27V402E

    Abstract: MR27V402EMP MR27V402ERP MR27V402ETP SOJ42-P-400-1
    Text: Discontinued Product OKI Semiconductor MR27V402E FEDR27V402E-01-03 Issue Date: Jan. 15, 2004 262,144–Word x 16–Bit or 524,288–Word × 8–Bit One Time PROM GENERAL DESCRIPTION The MR27V402E is a 4 Mbit One Time Programmable Read-Only Memory that can be electrically switched


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    PDF MR27V402E FEDR27V402E-01-03 MR27V402E 144-word 16-bit 288-word 16-bit/524 MR27V402EMP MR27V402ERP MR27V402ETP SOJ42-P-400-1

    msm5232

    Abstract: d2b bus MSM5230 MSM6920 MSM7731-02 2016 RAM MSM66P589 MSM6411 18QFJ 3ch-10bit
    Text: Semiconductor Shortform Catalogue June 1999 Taupo Bay, New Zealand Foreword Strong Partnerships http://www.arm.com/ http://www.rambus.com/ http://www.elan.fr/ http://www.dialogic.com/ http://www.symbionics.co.uk/ http://www.vividsemi.com/ Oki Semiconductor Websites


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    PDF 99J595RB msm5232 d2b bus MSM5230 MSM6920 MSM7731-02 2016 RAM MSM66P589 MSM6411 18QFJ 3ch-10bit

    DIP40 weight

    Abstract: MR27V402E SOJ42 MR27V402ETP SOJ42-P-400-1 MR27V402EMP MR27V402ERP
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


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    GM71C17403CJ6

    Abstract: GM71C18163CJ6 GM71C17403CJ-6 GM71V18163CT6 1M x 16 EDO RAM SOJ24 GM71C18163CJ-6 GM71C16403CJ-60 GM71C17403CJ GM71V16163CT-6
    Text: CMOS DYNAMIC RAM CMOS DRAM’S • • • • • • • The latest comprehensive data to fully support these parts is readily available. • • • • • • New Product Part Number GM71C16403CJ-60 EDO GM71C16403CT-60 EDO GM71C17403CJ-60 EDO GM71C17403CT-60 EDO


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    PDF GM71C16403CJ-60 GM71C16403CT-60 GM71C17403CJ-60 GM71C17403CT-60 GM71V16403CJ-60 GM71V16403CT-60 GM71V17403CJ-60 GM71V17403CT-60 GM71C16163CJ-60 GM71C16163CT-60 GM71C17403CJ6 GM71C18163CJ6 GM71C17403CJ-6 GM71V18163CT6 1M x 16 EDO RAM SOJ24 GM71C18163CJ-6 GM71C17403CJ GM71V16163CT-6

    LH61664AK-50

    Abstract: LH61665AK lh61665 LH5PV8512 16256S
    Text: PSEUDO SRAM/DYNAMIC RAM • PSEUDO SRAMs ♦ Features • Random access memory with ease of use equivalent to SRAM. Supply current MAX. C apacity Bit C onfiguration 256k x 8 Model No. LH 5P 832/D /N -10/12 Access time ns MAX. Cycle time (ns) MIN. O perating


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    PDF LH5P864N 5P1632/N-80/15 32SOP DIP/40SOP 32DIP/32SOP/32TSOP 32TSOP DIP/32SOP/32TSOP( /32TS 44TSO LH61664AK-50 LH61665AK lh61665 LH5PV8512 16256S

    Untitled

    Abstract: No abstract text available
    Text: GM71 V S 16163C(CL) 1Mx16, 3.3V, 4K Ref, EDO Description Features The G M 7 1 V (S )1 6 1 6 3 C /C L is the new generation d y n a m ic R A M o r g a n iz e d 1 ,0 4 8 ,5 7 6 x 16 b it. G M 7 1 V (S )1 6 1 6 3 C /C L h as realiz ed h igh er density, higher perform ance and various functions by utilizing


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    PDF 16163C 1Mx16, GM71V 42SOJ

    Untitled

    Abstract: No abstract text available
    Text: # GM71V16163C GM71VS16163CL 1,048,576 WORDS 16 b i t p »^isrsis^i'bin> Lr ¡iu e m iC O fi l _ ,0 . ,JiL i< t irSL x CMOS DYNAMIC RAM Description Features The GM71V S 16163C/CL is the new generation


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    PDF GM71V16163C GM71VS16163CL GM71V 16163C/CL 42pin

    Untitled

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD Description Features The GM71C S 16160B/BL is the new generation dynamic RAM organized 1,048,576 words x 16 bits. GM71C(S)16160B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS process tech n o lo gy. The


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    PDF GM71C 16160B/BL 42SOJ GGQ4C544

    GM76C88AL FW

    Abstract: 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8
    Text: FUNCTION GUIDE DRAM Capacity 1M Bit 4M Bit >rg Type No Max Access Tim e Current (mA Power Supply Feature tftAC U'AC Ia a Active GM71C1000B/BJ/BZ-60 60 20 30 90 GM71C1000B/BJ/BZ-70 70 20 35 80 GM71C1Q0ÜB/BJ/BZ-80 80 25 40 70 GM71C1000BL/BLJ/BLZ-60 60 20


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    PDF GM71C1000B/BJ/BZ-60 GM71C1000B/BJ/BZ-70 GM71C1Q0 B/BJ/BZ-80 GM71C1000BL/BLJ/BLZ-60 GM71C1OOOBL/BLJ/BLZ- GM71C1000BL/BIJ/BLZ-80 200uA) 512cydes/8ms 18DIP GM76C88AL FW 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8

    42-SDIP-600

    Abstract: CF RM sot89 P2400F 12-DIPH-300
    Text: PACKAGE DIMENSIONS Dim ensions in Milimeters 8-DIP-300 .n n n n LJ LI o U LJ 12-DIPH-300 12 n ri a n n n o tx u lj" 'U L J 'T T 6 KP 283 Cl C ff ELECTRONICS PACKAGE DIMENSIONS Dimensions in Milimeters •K-DIPH-300 16-DIP-300A nrn¡~ir~ir-|¡~ir~in o LJ LJ LJ LJ LJ LJ U


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    PDF 8-DIP-300 12-DIPH-300 K-DIPH-300 16-DIP-300A 22-DIP-400 24-DIP-600B OT-23 OT-89 -220-F 42-SDIP-600 CF RM sot89 P2400F 12-DIPH-300

    lh61664k

    Abstract: LH62260K-70 LH61664 LH64260K-70 LH6B4400AK-70 LH61664K/S-70
    Text: MEMORES ★Under development • Dynamic RAMs Configuration CapacíBy words x bits 256k x 4 Model No. Supply current Access time Cycle time (ns) MAX. (ns) MIN. Operating Standby (mA) MAX. (mA) MAX. 1 Supply voltage (V) Operation mode 5 ± 10% Fast page mode


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    PDF LH64256CD/CK/CZ-60 LH64256CD/CK/CZ-70 LH6V4256K-10 LH68128K-554SOP/40SOJ/ 44TSOP LH61664AN/AK/AS-70 LH61664K/S-70 LH61664K/S-80 LH62805K-60 44SOP/40SOJ/ lh61664k LH62260K-70 LH61664 LH64260K-70 LH6B4400AK-70

    Si1014

    Abstract: GM71C16160AJ-6
    Text: GM71C16160A GM71CS16160AL LG Semicon Co.,Ltd. 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM Description Features The GM71C16160A is the new generation dynamic RAM organized 1,048,576 words x 16 bits. GM71C16160A has realized higher density, higher performance and various functions by utilizing


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    PDF GM71C16160A GM71CS16160AL Si1014 GM71C16160AJ-6