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    440208 Search Results

    440208 Result Highlights (1)

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    10118084-402-08LF Amphenol Communications Solutions Unshrouded Right Angle Header, Surface Mount, Double row , 8 Positions, 2.54mm (0.100in) Pitch Visit Amphenol Communications Solutions
    SF Impression Pixel

    440208 Price and Stock

    Kyocera AVX Components 145804044020829-

    CONN PLUG 44POS SMD GOLD
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    145804044020829- Cut Tape 3,384 1
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    TE Connectivity 644020-8

    CONN RCPT 8POS IDC 24AWG GOLD
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    EDAC Inc 807-082-440-208

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    EDAC Inc 857-016-440-208

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    EDAC Inc 857-058-440-208

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    440208 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    440208-5 Tyco Electronics PCB Mounted Jacks - Single Port, Multi-port and Stacked; RJ-11,6P/6C,15u" ( AMP ) Scan PDF

    440208 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: CMPA801B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		CMPA801B025F CMPA801B025F CMPA80 1B025F PDF

    vogt 94

    Abstract: vogt* 2.1 450507.6 CH-4654 vogt vogt ag DIN 46228
    Text: Vogt AG CH-4654 Lostorf Switzerland Postfach 148 Telefon 062 / 285 75 75 Vogt Verbindungstechnik Embouts de fil en cuivre sans isolation Uninsulated copper end-sleeves DIN 46228 Teil 1, ausgenommen* DIN 46228 partie 1, *excepté DIN 46228 part 1, *excepted


    Original     		CH-4654 vogt 94 vogt* 2.1 450507.6 vogt vogt ag DIN 46228 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		CMPA5585025F CMPA5585025F CMPA55 85025F PDF

    Untitled

    Abstract: No abstract text available
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		CMPA5585025F CMPA5585025F CMPA55 85025F PDF

    CMPA5585025F

    Abstract: power transistor gaas x-band CMPA5585025F-TB
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		CMPA5585025F CMPA5585025F CMPA55 85025F power transistor gaas x-band CMPA5585025F-TB PDF

    Untitled

    Abstract: No abstract text available
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		CMPA5585025F CMPA5585025F CMPA55 85025F PDF

    Untitled

    Abstract: No abstract text available
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		CMPA5585025F CMPA5585025F CMPA55 85025F PDF

    Untitled

    Abstract: No abstract text available
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		CMPA5585025F CMPA5585025F CMPA55 85025F PDF

    PR221DS sace tmax

    Abstract: ABB RD2 earth leakage relay 2CSC400002D0205 mccb 60947-2 max zs ABB Sace Tmax S941N C2 60947-2 MAX EARTH LOOP IMPEDANCE BSEN 60898 R0427 50Hz to 60Hz 400v circuit diagram SQZ3
    Text: Technical catalogue System pro M compact and other modular devices for low voltage installation System pro M compact® and other modular devices for low voltage installation In consideration of modifications to Standards and materials, the characteristics


    Original     		2CSC400002D0205 pr11-2006 PR221DS sace tmax ABB RD2 earth leakage relay mccb 60947-2 max zs ABB Sace Tmax S941N C2 60947-2 MAX EARTH LOOP IMPEDANCE BSEN 60898 R0427 50Hz to 60Hz 400v circuit diagram SQZ3 PDF

    CMPA801B025

    Abstract: X-band Internally Matched Power GaN HEMTs
    Text: CMPA801B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		CMPA801B025F CMPA801B025F CMPA80 1B025F CMPA801B025 X-band Internally Matched Power GaN HEMTs PDF

    Untitled

    Abstract: No abstract text available
    Text: CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		CMPA801B025F CMPA801B025F CMPA80 1B025F PDF

    RF3-50

    Abstract: POWER456
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher


    Original     		CMPA5585025F CMPA5585025F CMPA55 85025F RF3-50 POWER456 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		CMPA5585025F CMPA5585025F CMPA55 85025F PDF

    CMPA801B025

    Abstract: CMPA801B025F x-band mmic 3.5 DC Jack
    Text: CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		CMPA801B025F CMPA801B025F CMPA80 1B025F CMPA801B025 x-band mmic 3.5 DC Jack PDF

    x-Band Hemt Amplifier

    Abstract: No abstract text available
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		CMPA5585025F CMPA5585025F CMPA55 85025F x-Band Hemt Amplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: 0 1 ,8 0 ±0.05 9.90îf 0.05 - 0.10 1.016 D 01.OO±O.O5 0.35 ch o o [ F 3 PCQ. EDGE PCB 15 .2 0 ±0.05 6.90 C 17 .4 0 ±0.10 16.20 RECOMMENDED NOTE : MATERIAL 1. COVER : COPPER ALLOY. 2. HOUSING : HIGH TEMPERATURE THERMOPLASTIC, UL 94V-0, BLACK COLOR. 3. CONTACT ; COPPER ALLOY.


    OCR Scan     		DEC-2001 PDF

    oa 1160

    Abstract: 6P20 6p2c 440208
    Text: 0 1 .8 0 + 0 .0 5 j_ n hr 01 .00 + 0 .0 5 CONTACTS AS OPTIONS, S EE TABLE J-0,00 5 .2 0 + 0 .0 5 7 .4 0 + 0 . 1 0 R EC O M M EN D E D P.C.B. LAYOUT TOP VIEW' NOTE : 13.40 MATERIAL 1. COVER : COPPER ALLOY. 13 JO 11.60 2. HOUSING : HIGH TEMPERATURE THERMOPLASTIC,


    OCR Scan     		200PCS/REEL 1800PCS/CARTON Q2-NOV-2004 2-NOV-2004 oa 1160 6P20 6p2c 440208 PDF