ABO-20 L
Abstract: cccv charger MAX8845YETC max8845
Text: 19-4405; Rev 0; 3/09 28V Linear Li+ Battery Chargers with Battery Detection and Overvoltage Protected Output The MAX8845Z/MAX8845Y are intelligent, stand-alone constant-current, constant-voltage CCCV , thermally regulated linear chargers designed for charging a single-cell lithium-ion (Li+) battery. The MAX8845Z/
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MAX8845Z/MAX8845Y
MAX8845Z/
MAX8845Y
MO220
ABO-20 L
cccv charger
MAX8845YETC
max8845
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MAX8845
Abstract: 4.7k Preset MAX8845YETC GMK107BJ105KA GRM188R61A225KE34 dmm3 digital Ammeter circuit digital AC Ammeter ABI Electronics MAX8845ZEVKIT
Text: 19-4405; Rev 0; 12/08 MAX8845Z Evaluation Kit Features The MAX8845Z evaluation kit EV kit is a fully assembled and tested PCB for evaluating the MAX8845Z/ MAX8845Y 28V linear Li+ battery chargers. The MAX8845Z EV kit features an overvoltage-protected LDO output (SAFEOUT) for low-voltage-rated USB
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MAX8845Z
MAX8845Z/
MAX8845Y
MAX8845Z/MAX8845Y
MAX8845
4.7k Preset
MAX8845YETC
GMK107BJ105KA
GRM188R61A225KE34
dmm3
digital Ammeter circuit
digital AC Ammeter
ABI Electronics
MAX8845ZEVKIT
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4405 mosfet
Abstract: mosfet 4405 a6529 4405 n channel mosfet
Text: SPICE Device Model Si7798DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si7798DP
S-82025-Rev.
01-Sep-08
4405 mosfet
mosfet 4405
a6529
4405 n channel mosfet
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S-82025
Abstract: si7798 64055
Text: SPICE Device Model Si7798DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si7798DP
18-Jul-08
S-82025
si7798
64055
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Si4126DY
Abstract: S-81748 mosfet 4405
Text: SPICE Device Model Si4126DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4126DY
18-Jul-08
S-81748
mosfet 4405
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si4126DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si4126DY
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Si4126DY
Abstract: No abstract text available
Text: New Product Si4126DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00275 at VGS = 10 V 39 0.0034 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)
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Si4126DY
Si4126DY-T1-GE3
08-Apr-05
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MOSFET 4407
Abstract: IFR410 4406 mosfet IFU410 IFR-410 MOSFET 4407 a 4404 mosfet IRFU410 4407 mosfet ADVANCED LINEAR DEVICES 4407
Text: IRFR410, IRFU410 Data Sheet 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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IRFR410,
IRFU410
TA17445.
MOSFET 4407
IFR410
4406 mosfet
IFU410
IFR-410
MOSFET 4407 a
4404 mosfet
IRFU410
4407 mosfet
ADVANCED LINEAR DEVICES 4407
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Si4126DY
Abstract: No abstract text available
Text: New Product Si4126DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00275 at VGS = 10 V 39 0.0034 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)
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Si4126DY
Si4126DY-T1-GE3
18-Jul-08
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si4126
Abstract: Si4126DY 265b S8089
Text: New Product Si4126DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00275 at VGS = 10 V 39 0.0034 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)
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Si4126DY
Si4126DY-T1-GE3
11-Mar-11
si4126
265b
S8089
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Untitled
Abstract: No abstract text available
Text: FDMC8010 N-Channel PowerTrench MOSFET 30 V, 75 A, 1.3 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This
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FDMC8010
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4405 mosfet
Abstract: No abstract text available
Text: FDMC8010 N-Channel PowerTrench MOSFET 30 V, 75 A, 1.3 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This
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FDMC8010
FDMC8010
4405 mosfet
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Untitled
Abstract: No abstract text available
Text: FDMC8010 N-Channel PowerTrench MOSFET 30 V, 75 A, 1.3 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This
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FDMC8010
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Untitled
Abstract: No abstract text available
Text: New Product Si4126DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00275 at VGS = 10 V 39 0.0034 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)
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Si4126DY
Si4126DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product Si4126DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00275 at VGS = 10 V 39 0.0034 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)
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Si4126DY
Si4126DY-T1-GE3
150electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product Si4126DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00275 at VGS = 10 V 39 0.0034 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)
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Si4126DY
Si4126DY-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: BUK764R0-40E N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high
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BUK764R0-40E
OT404
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ic str wg 252
Abstract: HV9961 hv9931 HV9910B HV9910 str 6655 HV9919 pj 899 diode BIBRED STR 6656
Text: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,
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HV9961
Abstract: 2N7002 MARKING 1702 HV9963 HV9910 hv9910b SR087 str 6655 STR 6656 DN2450 HV509
Text: Supertex inc. Short Form Catalog 2011 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,
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product25
HV9961
2N7002 MARKING 1702
HV9963
HV9910
hv9910b
SR087
str 6655
STR 6656
DN2450
HV509
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PDF
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STR 6656
Abstract: HV509 str 6655 pj 899 diode HV9910 K 3264 fet transistor tray qfn 7x7 diode PJ 966 relay 4098 cell phone detector
Text: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,
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nxp marking d1
Abstract: No abstract text available
Text: BUK764R0-40E N-channel TrenchMOS standard level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high
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BUK764R0-40E
OT404
nxp marking d1
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Untitled
Abstract: No abstract text available
Text: IRFR410, IRFU410 S e m iconductor D ata S h eet 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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IRFR410,
IRFU410
000i2
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Untitled
Abstract: No abstract text available
Text: • 4302271 0054110 3^fl ■ HAS IRFD220/221/222/223 IRFD220R/221R/222R/223R 2 HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features 4-P IN DIP • 0.7 A and 0.8A , 150V - 2 0 0V TOP VIEW • ro s o n ) = 0 .8 fl and 1.2f2 • Single Pulse A valanche Energy R ated*
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IRFD220/221/222/223
IRFD220R/221R/222R/223R
s4-406
OOS4114
IRFD220,
RFD222,
IRFD223
RFD220R.
IRFD221R,
IRFD222R,
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diode 222r
Abstract: MOSFET 4407 a circuit 4407
Text: 2 HARRIS IR FD 220/221/222/223 IRFD220R/221R/222R/223R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package F e a tu re s 4-P IN DIP • 0.7 A and 0.8A , 1 5 0V - 2 0 0V TOP VIEW • rDS(on = 0 .8 H and 1 .2 Ct • Single Pulse Avalanche Energy R ated*
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IRFD220R/221R/222R/223R
diode 222r
MOSFET 4407 a
circuit 4407
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