Untitled
Abstract: No abstract text available
Text: PYA28C256 32K x 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 300 µA Standby Current Fast Write Cycle Times CMOS & TTL Compatible Inputs and Outputs
|
Original
|
PDF
|
PYA28C256
350ns
28-Pin
32-Pin
450x550
PYA28C256
32Kx8
64-byte
EEPROM104
|
Untitled
Abstract: No abstract text available
Text: PYA28C256 32K X 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Software Data Protection Single 5V±10% Power Supply CMOS & TTL Compatible Inputs and Outputs Simple Byte and Page Write Endurance: - 10,000 Write Cycles - 100,000 Write Cycles optional
|
Original
|
PDF
|
PYA28C256
350ns
28-Pin
32-Pin
450x550
PYA28C256
32Kx8
64-byte
EEPROM104
|
PYA28C16
Abstract: eeprom
Text: PYA28C16 2K X 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Fast Byte Write 200µs or 1 ms Low Power CMOS: - 60 mA Active Current - 150 µA Standby Current Endurance: - 10,000 Write Cycles - 100,000 Write Cycles (optional)
|
Original
|
PDF
|
PYA28C16
350ns
24-Pin
32-Pin
450x550
PYA28C16
EEPROM108
eeprom
|
PYA28C64
Abstract: eeprom
Text: PYA28C64 X 8K X 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Fast Byte Write (200µs or 1 ms) Low Power CMOS: - 60 mA Active Current - 150 µA Standby Current Fast Write Cycle Time CMOS & TTL Compatible Inputs and Outputs
|
Original
|
PDF
|
PYA28C64
350ns
PYA28C64X
28-Pin
32-Pin
450x550
eeprom
|
P4C1256L
Abstract: No abstract text available
Text: P4C1256L LOW POWER 32K X 8 STATIC CMOS RAM FEATURES VCC Current Commercial/Industrial — Operating: 70mA/85mA — CMOS Standby: 100µA/100µA Access Times —55/70/85 Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE and OE Inputs Common Data I/O
|
Original
|
PDF
|
P4C1256L
70mA/85mA
28-Pin
350x550mil)
32-Pin
450x550mil)
P4C1256L
|
PYA28C256
Abstract: No abstract text available
Text: PYA28C256 32K x 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 300 µA Standby Current Fast Write Cycle Times CMOS & TTL Compatible Inputs and Outputs
|
Original
|
PDF
|
PYA28C256
350ns
28-Pin
32-Pin
450x550
PYA28C256
32Kx8
64-byte
EEPROM104
|
Untitled
Abstract: No abstract text available
Text: PYA28HC256 HIGH SPEED 32K X 8 EEPROM FEATURES Access Times of 70, 90 and 120ns Software Data Protection Single 5V±10% Power Supply CMOS & TTL Compatible Inputs and Outputs Simple Byte and Page Write Endurance: - 10,000 Write Cycles - 100,000 Write Cycles optional
|
Original
|
PDF
|
PYA28HC256
120ns
28-Pin
32-Pin
450x550
PYA28HC256
32Kx8
64-byte
EEPROM106
|
2KX8 EEPROM
Abstract: No abstract text available
Text: PYA28C16 2K X 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Fast Byte Write 200µs or 1 ms Low Power CMOS: - 60 mA Active Current - 150 µA Standby Current Endurance: - 10,000 Write Cycles - 100,000 Write Cycles (optional)
|
Original
|
PDF
|
PYA28C16
350ns
24-Pin
32-Pin
450x550
PYA28C16
EEPROM108
2KX8 EEPROM
|
Untitled
Abstract: No abstract text available
Text: PYA28C64 X 8K X 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns CMOS & TTL Compatible Inputs and Outputs Single 5V±10% Power Supply Endurance: - 10,000 Write Cycles - 100,000 Write Cycles (optional) Fast Byte Write (200µs or 1 ms) Low Power CMOS:
|
Original
|
PDF
|
PYA28C64
350ns
28-Pin
32-Pin
450x550
PYA28C64X
PYA28C64
EEPROM105
|
Untitled
Abstract: No abstract text available
Text: PYA28C010 128K x 8 EEPROM FEATURES Access Times of 120, 150, 200, and 250ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 500 µA Standby Current Fast Write Cycle Times Fully TTL Compatible Inputs and Outputs
|
Original
|
PDF
|
PYA28C010
250ns
32-Pin
450x550
44-Pin
650x650
PYA28C010
128Kx8
|
Untitled
Abstract: No abstract text available
Text: PYA28C64B 8K x 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 40 mA Active Current - 100 µA Standby Current Fast Write Cycle Times CMOS & TTL Compatible Inputs and Outputs
|
Original
|
PDF
|
PYA28C64B
350ns
28-Pin
32-Pin
450x550
PYA28C64B
64-byte
EEPROM111
|
Untitled
Abstract: No abstract text available
Text: PYA28C010 128K X 8 EEPROM FEATURES Access Times of 120, 150, 200, and 250ns Software Data Protection Single 5V±10% Power Supply Fully TTL Compatible Inputs and Outputs Simple Byte and Page Write Endurance: - 10,000 Cycles/byte - 100,000 Cycles/page Low Power CMOS:
|
Original
|
PDF
|
PYA28C010
250ns
32-Pin
450x550
44-Pin
650x650
PYA28C010
128Kx8
|
Untitled
Abstract: No abstract text available
Text: PYA28C64 X 8K x 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Simple Byte Write Low Power CMOS: - 60 mA Active Current - 150 µA Standby Current Fast Write Cycle Time CMOS & TTL Compatible Inputs and Outputs Endurance:
|
Original
|
PDF
|
PYA28C64
350ns
PYA28C64X
28-Pin
32-Pin
450x550
|
pya28c010
Abstract: No abstract text available
Text: PYA28C010 128K x 8 EEPROM FEATURES Access Times of 120, 150, 200, and 250ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 500 µA Standby Current Fast Write Cycle Times Fully TTL Compatible Inputs and Outputs
|
Original
|
PDF
|
PYA28C010
250ns
32-Pin
450x550
44-Pin
650x650
PYA28C010
128Kx8
|
|
Untitled
Abstract: No abstract text available
Text: P4C1256L LOW POWER 32K X 8 STATIC CMOS RAM FEATURES VCC Current Commercial/Industrial — Operating: 70mA/85mA — CMOS Standby: 100µA/100µA Access Times —55/70/85 Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE and OE Inputs Common Data I/O
|
Original
|
PDF
|
P4C1256L
70mA/85mA
28-Pin
350x550mil)
32-Pin
450x550mil)
|
Untitled
Abstract: No abstract text available
Text: PYA28HC256 HIGH SPEED 32K x 8 EEPROM FEATURES Access Times of 70, 90 and 120ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 80 mA Active Current - 3 mA Standby Current Fast Write Cycle Times CMOS & TTL Compatible Inputs and Outputs
|
Original
|
PDF
|
PYA28HC256
120ns
28-Pin
32-Pin
450x550
PYA28HC256
32Kx8
64-byte
devi65
|
Untitled
Abstract: No abstract text available
Text: PYA28HC256 HIGH SPEED 32K x 8 EEPROM FEATURES Access Times of 70, 90 and 120ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 80 mA Active Current - 3 mA Standby Current Fast Write Cycle Times CMOS & TTL Compatible Inputs and Outputs
|
Original
|
PDF
|
PYA28HC256
120ns
28-Pin
32-Pin
450x550
PYA28HC256
32Kx8
64-byte
EEPROM106
|
Untitled
Abstract: No abstract text available
Text: PYA28HC256 HIGH SPEED 32K x 8 EEPROM FEATURES Access Times of 70, 90 and 120ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 80 mA Active Current - 3 mA Standby Current Fast Write Cycle Times CMOS & TTL Compatible Inputs and Outputs
|
Original
|
PDF
|
PYA28HC256
120ns
28-Pin
32-Pin
450x550
PYA28HC256
32Kx8
64-byte
EEPROM106
|
AS28C010
Abstract: No abstract text available
Text: PYX28C010 128K x 8 EEPROM FEATURES Access Times of 120, 150, 200, and 250ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 500 µA Standby Current Fast Write Cycle Times Fully TTL Compatible Inputs and Outputs
|
Original
|
PDF
|
PYX28C010
250ns
32-Pin
450x550
PYX28C010
128Kx8
64-byte
EEPROM103
AS28C010
|
P4C1256L
Abstract: No abstract text available
Text: P4C1256L LOW POWER 32K x 8 STATIC CMOS RAM FEATURES VCC Current Commercial/Industrial — Operating: 70mA/85mA — CMOS Standby: 100µA/100µA Access Times —55/70/85 Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE and OE Inputs Common Data I/O
|
Original
|
PDF
|
P4C1256L
70mA/85mA
28-Pin
350x550mil)
32-Pin
450x550mil)
P4C1256L
|
2KX8 EEPROM
Abstract: No abstract text available
Text: PYA28C17 2K x 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Fast Byte Write 200µs or 1 ms CMOS & TTL Compatible Inputs and Outputs Data Retention: 10 Years RDY/BUSY Open Drain Output Low Power CMOS: - 60 mA Active Current
|
Original
|
PDF
|
PYA28C17
350ns
28-Pin
32-Pin
450x550
PYA28C17
EEPROM110
2KX8 EEPROM
|
Untitled
Abstract: No abstract text available
Text: PYA28C16 2K X 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Endurance: - 10,000 Write Cycles - 100,000 Write Cycles optional Fast Byte Write (200µs or 1 ms) Data Retention: 10 Years Low Power CMOS: - 60 mA Active Current
|
Original
|
PDF
|
PYA28C16
350ns
24-Pin
32-Pin
450x550
PYA28C16
24-Pin
EEPROM108
|
Untitled
Abstract: No abstract text available
Text: PYA28C010 128K x 8 EEPROM FEATURES Access Times of 120, 150, 200, and 250ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 500 µA Standby Current Fast Write Cycle Times Fully TTL Compatible Inputs and Outputs
|
Original
|
PDF
|
PYA28C010
250ns
32-Pin
450x550
PYA28C010
128Kx8
64-byte
EEPROM103
|
Untitled
Abstract: No abstract text available
Text: / ' . \ A U S T IN S E M I C O N D U C T O R . INC. AS7S512K8 512Kx8 SRAM MODULE ADVANCED FEATURES • • • • • • Access times of 17, 20, 25, 35ns O rganized as 512Kx8; Operation with single 5 volt supply Low pow er CM O S TTL Com patible Inputs and O utputs
|
OCR Scan
|
PDF
|
AS7S512K8
512Kx8
512Kx8;
AS7S512K8EC20M
512Kx8-bits.
AS7S512K8
MIL-STD-883,
|