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    PYA28C16

    Abstract: eeprom
    Text: PYA28C16 2K X 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Fast Byte Write 200µs or 1 ms Low Power CMOS: - 60 mA Active Current - 150 µA Standby Current Endurance: - 10,000 Write Cycles - 100,000 Write Cycles (optional)


    Original     		PDF PYA28C16 350ns 24-Pin 32-Pin 450x550 PYA28C16 EEPROM108 eeprom

    2KX8 EEPROM

    Abstract: No abstract text available
    Text: PYA28C16 2K X 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Fast Byte Write 200µs or 1 ms Low Power CMOS: - 60 mA Active Current - 150 µA Standby Current Endurance: - 10,000 Write Cycles - 100,000 Write Cycles (optional)


    Original     		PDF PYA28C16 350ns 24-Pin 32-Pin 450x550 PYA28C16 EEPROM108 2KX8 EEPROM

    Untitled

    Abstract: No abstract text available
    Text: PYA28C16 2K X 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Endurance: - 10,000 Write Cycles - 100,000 Write Cycles optional Fast Byte Write (200µs or 1 ms) Data Retention: 10 Years Low Power CMOS: - 60 mA Active Current


    Original     		PDF PYA28C16 350ns 24-Pin 32-Pin 450x550 PYA28C16 24-Pin EEPROM108