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    45W UHF Search Results

    45W UHF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CO-213UHFMX20-005 Amphenol Cables on Demand Amphenol CO-213UHFMX20-005 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 5 ft Datasheet
    CO-213UHFMX20-050 Amphenol Cables on Demand Amphenol CO-213UHFMX20-050 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 50 ft Datasheet
    CO-213UHFMX20-100 Amphenol Cables on Demand Amphenol CO-213UHFMX20-100 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 100 ft Datasheet
    CO-213UHFMX20-010 Amphenol Cables on Demand Amphenol CO-213UHFMX20-010 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 10 ft Datasheet
    CO-213UHFMX20-015 Amphenol Cables on Demand Amphenol CO-213UHFMX20-015 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 15 ft Datasheet

    45W UHF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NTE367

    Abstract: 45W UHF
    Text: NTE367 Silicon NPN Transistor RF Power Amplifier PO = 45W @ 512MHz Description: The NTE367 is a silicon NPN RF power transistor in a W65 type package designed for 12.5V UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz.


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    NTE367 512MHz NTE367 512MHz. 470MHz 470MHz 45W UHF PDF

    shery

    Abstract: No abstract text available
    Text: UTV0408-45 45W Psync, 470-860MHz, 32V Broadband RF Power N Channel Enhancement-Mode Lateral MOSFET The UTV0408-45 is designed for high power UHF TV transmitter applications and is capable of producing 14dB gain and 45 watt peak sync output power over an instantaneous bandwidth


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    UTV0408-45 470-860MHz, UTV0408-45 860MHz. 30dBc 55dBc UTV0408-45F shery PDF

    Untitled

    Abstract: No abstract text available
    Text: NPT1015 Gallium Nitride 28V, 45W, DC-3.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •       Suitable for linear and saturated applications Tunable from DC-3.5 GHz 28V Operation Industry Standard Package


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    NPT1015 NPT1015 NDS-035 PDF

    D1002UK

    Abstract: No abstract text available
    Text: TetraFET D1002UK.02 METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 45W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS


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    D1002UK 175MHz PDF

    D2022UK

    Abstract: No abstract text available
    Text: TetraFET D2022UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 45W – 28V – 500MHz PUSH–PULL B H C G 2 3 1 A D E 5 4 F FEATURES I • SIMPLIFIED AMPLIFIER DESIGN N M J O K • SUITABLE FOR BROAD BAND APPLICATIONS


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    D2022UK 500MHz D2022UK PDF

    Untitled

    Abstract: No abstract text available
    Text: TetraFET D2209UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 45W – 12.5V – 900MHz SINGLE ENDED C D E 2 pls 1 B 2 3 A G 5 4 H I FEATURES • SIMPLIFIED AMPLIFIER DESIGN F M J K N DT PIN 1 SOURCE (COMMON) PIN 2


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    D2209UK 900MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: TetraFET D2022UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 45W – 28V – 500MHz PUSH–PULL B H C G 2 3 1 A D E 5 4 F FEATURES I • SIMPLIFIED AMPLIFIER DESIGN N M J O K • SUITABLE FOR BROAD BAND APPLICATIONS


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    D2022UK 500MHz PDF

    transistor 2N4891

    Abstract: 45W UHF 2N4891 2N4947 transistor 2n4852 2SH21 Lv42 2n6120 91kohm 2N494
    Text: ADDITIONAL TRANSISTORS Item Number Part Number Polarity Manufacturer Package Style Description Mati. Unijunction Transistors, Cont'd 2N1671A 2N1671B 2N1671C 2N2160 2N2213 2N2213 2N2417 2N2417A 2N2417B 2N2418 2N2418A 2N2418B 2N2419 2N2419A 2N2419B 2N2420


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    2N1671A 2N1671B 2N1671C 2N2160 2N2213 2N2417 2N2417A 2N2417B 2N2418 transistor 2N4891 45W UHF 2N4891 2N4947 transistor 2n4852 2SH21 Lv42 2n6120 91kohm 2N494 PDF

    THU50

    Abstract: 470-860mhz Power amplifier w power 470-860mhz w 45W UHF linear amplifier 470-860 470-860mhz Power amplifier
    Text: THU50 50W Class A UHF Amplifier Designed for TV transposers and transmitters, this amplifier incorporates microstrip technology and discrete linear push-pull transistors whith gold metallization and diffused emitter ballast resistors to enhance ruggedness and reliability.


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    THU50 40W267 THU50 470-860mhz Power amplifier w power 470-860mhz w 45W UHF linear amplifier 470-860 470-860mhz Power amplifier PDF

    TRANSISTOR DATASHEET D1555

    Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
    Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440


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    2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878 PDF

    dvb power supply circuit diagram

    Abstract: dvb circuit diagram dvb datasheet dvb strong power supply circuit diagram DVB-T RS232-RS485
    Text: AU05-D 3-8 Wrms DVB-T UHF Amplifier AU05-D is a full LD-MOS Broadcast Power Amplifier designed for digital signal repeaters and gap-fillers. The unit is the state of the art in terms of easy assembly, reliability and performance. The complete unit can assure the compliance to


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    AU05-D AU05-D RS232-RS485 240Vac dvb power supply circuit diagram dvb circuit diagram dvb datasheet dvb strong power supply circuit diagram DVB-T PDF

    dvb power supply circuit diagram

    Abstract: RF remote control circuit diagram dvb strong power supply circuit diagram DVB-T sma connector panel RS232-RS485 uhf 3W amplifier
    Text: AU05-D 3 - 8 Wrms DVB-T UHF Amplifier AU05-D is a full LD-MOS Broadcast Power Amplifier designed for digital signal repeaters and gap-fillers. The unit is the state of the art in terms of easy assembly, reliability and performance. The complete unit can assure the compliance to


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    AU05-D AU05-D RS232-RS485 240VacOF dvb power supply circuit diagram RF remote control circuit diagram dvb strong power supply circuit diagram DVB-T sma connector panel uhf 3W amplifier PDF

    500w power amplifier circuit diagram

    Abstract: RF Amplifier 500w 200w computer power supply Circuit diagram 200w power amplifier circuit diagram 500w sound amplifier circuit diagram DVB-T led power supply 50w t-amplifier RS232-RS485
    Text: AU21-D 10-20 Wrms UHF DVB-T Amplifier 50W p.s. UHF Analog Amplifier AU21-D is a full LD-MOS Broadcast Power Amplifier designed for digital and analog signal repeaters and gap-fillers. The unit is the state of the art in terms of easy assembly, reliability and


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    AU21-D AU21-D RS232-RS485 500w power amplifier circuit diagram RF Amplifier 500w 200w computer power supply Circuit diagram 200w power amplifier circuit diagram 500w sound amplifier circuit diagram DVB-T led power supply 50w t-amplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: NPT1015 Gallium Nitride 28V, 50W, DC-2.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •       Suitable for linear and saturated applications Tunable from DC-2.5 GHz 28V Operation Industry Standard Package


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    NPT1015 NPT1015 NDS-035 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ ELECTRONIC A mitsubishi DEVICE GROUP RF POWER MODULE M67728 430-450MHz Bandz Amateur SSB Mobile Radio DESCRIPTION OUTLINE DRAWING Dimensions in mm M67728 is a thick film RF power module specifically designed for 430-450MHz, 45W all mode amateur radio. FEATURES


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    M67728 430-450MHz M67728 430-450MHz, 100mW, PDF

    ASZ15

    Abstract: AF127 AF126 AF125 AF124 ASZ18 ASZ16 AF117 ADZ12 AF116
    Text: 52 T ran sistors Continued Notes Minimum value Average value Max. unilateralized power gain Max. frequency of oscillation With heat sink Max. total dissipation in free air at 25°C ambient temp. Vcbo: Max. collector-to-t»ase voltage, emitter open-circuited


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    ADZ11 100kcnl AF114 ASY27 150mW 0mc111 ASY28 14mcl2> ASY29 ASZ15 AF127 AF126 AF125 AF124 ASZ18 ASZ16 AF117 ADZ12 AF116 PDF

    TRANSISTOR S 838

    Abstract: J552 MRFS47 56590653B TRANSISTOR motorola 838 56-590-65-3B j547 J428
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed for 12.5 volt UHF large-signal, common-base amplifier applica­ tions in industrial and commercial FM equipment operating in the range of 806-960 MHz. • Specified 12.5 Volt, 870 MHz Characteristics


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    MRF847 TRANSISTOR S 838 J552 MRFS47 56590653B TRANSISTOR motorola 838 56-590-65-3B j547 J428 PDF

    air variable capacitor

    Abstract: mica capacitor 2SC2905
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2905 NPN E P IT A XI A L P L A N A R T Y P E DESCRIPTION OUTLINE DRAWING Dimensions in mm 2 S C 2 9 0 5 is a silicon NPN epitaxial planar ty p e tra n sisto r spe cifi­ R1 cally designed fo r high pow er am plifiers applications in UHF band


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    2SC2905 2SC2905 520MHz> 460MHz 1430M air variable capacitor mica capacitor PDF

    M57722

    Abstract: No abstract text available
    Text: - 2 98 - i - Sä 9. * Il $11$: a = .W Vcc V • M 5 7 7 2 1M m z •x m - i & m m f < ê „ t ? 's i? X ? , n Ä a W § 3 x f - :y o ffiiâ : UHF(400~450MHz)w 1~ SW FM » « « ¡s is m o : m iiijJjo a i lJ ( # ( S 2 2 d B ) o 5 Ê fê « 16.0 « a f range(MHz)


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    450MHz S22dB 148MHz) -26dB -31dB( M57722 PDF

    NTE2314

    Abstract: NTE375 NPN pnp MATCHED PAIRS RF 482 NTE396 NTE397 T060 T072 T092 2-30MHZ
    Text: BI-POLAR TRANSISTORS Maximum Collector Power Dissipation Watts Diag. No. Maximum Collector Current (Amps) Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain b v CEO BVEBo h pE Pd 't 31a •c 0.05 BV cbo


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    NTE397) NTE396) NTE375) T0220 T0218 NTE2314) NTE2306) NTE2314 NTE375 NPN pnp MATCHED PAIRS RF 482 NTE396 NTE397 T060 T072 T092 2-30MHZ PDF

    NTE375

    Abstract: NTE397 NTE392 NTE393 NTE396 T0218 T072 T092
    Text: N T E ELECT RONICS INC bMaiSST QGQSbOb QTM * N T E S5E D P I POUVR I iB g j g g j j : T-33-01 I Maximum Breakdown Voltage Maximum Collector Power Dissipation Watts Typical Frsq. (MHz) Case Style Diag. No. Maximum Collector Current (Amps) Collector to Base


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    T-33-01 NTE393) NTE392) T0218 80e-866MHz) 806-866MHz) 806-947MHz) NTE375 NTE397 NTE392 NTE393 NTE396 T072 T092 PDF

    ta8172

    Abstract: t 3866 transistor equivalent transistor uhf circulator t 3866 power transistor t 3866 transistor 5257 transistor rca rf power transistor 30w 420 NPN Silicon RF Transistor Allen-Bradley 1397 Allen-Bradley resistors
    Text: File No. 656. RF Power Tran sisto rs Solid State Division 4 .n a 7 fì 40971 30-W and 45-W, 12.5-V, UHF Mobile, Silicon N-P-N Overlay Transistors With Internally Mounted Input-Matching Networks Features: • Internally mounted input " T " matching networks


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    RCAHF-40 ta8172 t 3866 transistor equivalent transistor uhf circulator t 3866 power transistor t 3866 transistor 5257 transistor rca rf power transistor 30w 420 NPN Silicon RF Transistor Allen-Bradley 1397 Allen-Bradley resistors PDF

    2sc3714

    Abstract: 2SC3691 2SC3702 2SC3676 2SC3692 2SC3671 2SC3672 2SC3673 G1508 2SC3678
    Text: - 168 - S Ta=25cC, *EPfäTc=25°C} a s m. % 2SC3671 2SC3672 2SC3673 2SC3675 2SC3676 2SC3678 2SC3679 2SC3680 2SC3685 2SC3686 2SC3687 2SC3688 2SC3689 2SC3691 2SC3692 2SC3693 2SC3694 2SC370Q 2SC3701 2SC3702 2SC3704 2SC3705 2SC3707 2SC3708 2SC3709 2SC3710 2SC3714


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    2SC3671 2SC3672 2SC3673 2SC3675 2SC3676 2SC3678 2SC3679 2S00MHz SC-59A) 2SC3707 2sc3714 2SC3691 2SC3702 2SC3676 2SC3692 2SC3671 2SC3672 G1508 PDF

    2SC2897

    Abstract: 2SC2896 2SC2894 2SC2930 2SC2903 2SC2925 2SC2892 2SC2895 2sc2902 2SC2904
    Text: - 138 - M £ *± m £ & u T a = 2 5 <1C , * E P [ á T c = 2 5 tC V’ CBO V’ ceo ÍC(DC) Pc Pc* (V) (V) (A) (W) (W) ICBO (// A) V CB (V) / m t o b • , hF E / (max) t e (T a = 2 5 * C ) , (V) ■ iC/ *H (A) [*EPfätypi ] (V) le 2SC2903 an BM Bn Bn


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    2SC2891 2SC2892 2SC2893 2SC2894 2SC2895 2SC2896 2SC2897 2SC2898 2-14A1A) 2SC2913 2SC2930 2SC2903 2SC2925 2sc2902 2SC2904 PDF