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    4600 MOSFET INVERTER Search Results

    4600 MOSFET INVERTER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ICL7667MJA/883B Rochester Electronics LLC Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8, FRIT SEALED, CERDIP-8 Visit Rochester Electronics LLC Buy
    ICL7667MJA Rochester Electronics LLC Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 Visit Rochester Electronics LLC Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    4600 MOSFET INVERTER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    10KV SiC

    Abstract: SiC IGBT High Power Modules SiC MOSFET 4600 mosfet 4600 dual mosfet Cree SiC MOSFET N00014-05-C-0202 Cree SiC diode die 100A Mosfet high voltage 10kv igbt
    Text: Roadmap for Megawatt Class Power Switch Modules Utilizing Large Area Silicon Carbide MOSFETs and JBS Diodes Jim Richmond Scott Leslie Brett Hull Cree, Inc. 4600 Silicon Drive Durham, NC 27703, USA jim_richmond@cree.com Powerex, Inc. 200 E. Hillis St. Youngwood PA 15697, USA


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    IXFd50n20

    Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
    Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type


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    DIODE s3l

    Abstract: POWER MOSFET 4600 DIODE FAST S2L diode S3L 49 diode S3L 13 diode S3L 54 DIODE s2l 54 s3l 02 diode diode S3L 39 MOSFET 4600
    Text: Preliminary Data Sheet ú0560 N-Channel Power MOSFET Array Description Features The ú0560 contains six N-channel power MOS FET with VDSS = 500 V in half-bridge configuration. These enhancement-mode Power MOSFET array utilizes a DMOS structure and alpha’s dielectric


    Original     		PDF 0560DSHa DIODE s3l POWER MOSFET 4600 DIODE FAST S2L diode S3L 49 diode S3L 13 diode S3L 54 DIODE s2l 54 s3l 02 diode diode S3L 39 MOSFET 4600

    ao4600

    Abstract: Complementary POWER MOSFET AO4600 AO4600L PD-00165 P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT MARKING CODE l22 marking 49M 65D2
    Text: AO4600 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS V = 30V ID = 6.9A (VGS = 10V) -5A (VGS = -10V) RDS(ON) < 27mΩ < 49mΩ (VGS =- 10V) < 32mΩ < 64mΩ (VGS =- 4.5V) < 50mΩ < 120mΩ (VGS = -2.5V)


    Original     		PDF AO4600 AO4600 AO4600L AO4600L PD-00165 Complementary POWER MOSFET AO4600 PD-00165 P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT MARKING CODE l22 marking 49M 65D2

    R2A11301FT

    Abstract: SH7766 R2A25108KFP 2SC5664 PowerVR SGX530 PowerVR SGX540 car ecu wiring system service manual R2A25104KFP V850E2 fx4 DJ4 renesas
    Text: Renesas Automotive www.renesas.com 2011.10 Renesas Automotive Introduction "Green" Automotive Initiative Leading the World with a Wide-Ranging Product Lineup • Application Systems ■ Renesas Products Contents 01 ■ Renesas Constituent Technologies HEV/EV


    Original     		PDF /533MHz BGA-832 BGA-472 BGA-429 BGA-720 BGA-653 R2A11301FT SH7766 R2A25108KFP 2SC5664 PowerVR SGX530 PowerVR SGX540 car ecu wiring system service manual R2A25104KFP V850E2 fx4 DJ4 renesas

    Untitled

    Abstract: No abstract text available
    Text: AO4600 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel VDS V = 30V -30V ID = 6.9A (VGS = 10V) -5A (VGS = -10V) RDS(ON) < 27mΩ < 49mΩ (VGS =- 10V) < 32mΩ < 64mΩ (VGS =- 4.5V) < 50mΩ < 120mΩ (VGS = -2.5V)


    Original     		PDF AO4600 AO4600 AO4600L AO4600L PD-00165

    IRFM054

    Abstract: No abstract text available
    Text: PD - 90709B POWER MOSFET THRU-HOLE TO-254AA IRFM054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM054 RDS(on) 0.027 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


    Original     		PDF 90709B O-254AA) IRFM054 O-254AA. MIL-PRF-19500 IRFM054

    Untitled

    Abstract: No abstract text available
    Text: PD - 90709B POWER MOSFET THRU-HOLE TO-254AA IRFM054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) 0.027 Ω IRFM054 ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


    Original     		PDF 90709B O-254AA) IRFM054 O-254AA. MIL-PRF-19500

    CAS100H12

    Abstract: CREE 1200V Z-Rec CAS100H12AM1 Cree SiC MOSFET silicon carbide MOSFET "CURRENT source"
    Text: CAS100H12AM1 VDS 1200 V 1200V, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode ID TC= 100˚C 100 A RDS(on) Features • • • • • • Package Ultra Low Loss High Ruggedness High-Frequency Operation Zero Reverse Recovery Current from Diode


    Original     		PDF CAS100H12AM1 VDS1200 CAS100H12AM1, CAS100H12 CREE 1200V Z-Rec CAS100H12AM1 Cree SiC MOSFET silicon carbide MOSFET "CURRENT source"

    fch47n60nf

    Abstract: No abstract text available
    Text: FCH47N60NF N-Channel SupreMOS FRFET® MOSFET 600 V, 45.8 A, 65 mΩ Features Description • 650 V @TJ = 150 The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction SJ technology employing a deep trench filling process that differentiate it from


    Original     		PDF FCH47N60NF FCH47N60NF

    Untitled

    Abstract: No abstract text available
    Text: FCH47N60NF N-Channel SupreMOS FRFET® MOSFET 600 V, 45.8 A, 65 m Features Description • 650 V @TJ = 150 The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction SJ technology employing a deep trench filling process that differentiate it from


    Original     		PDF FCH47N60NF

    SUP40P10-43

    Abstract: 4600 mosfet inverter SUP40P10-43-GE3
    Text: New Product SUP40P10-43 Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) - 100


    Original     		PDF SUP40P10-43 2002/95/EC O-220AB SUP40P10-43-GE3 18-Jul-08 SUP40P10-43 4600 mosfet inverter SUP40P10-43-GE3

    Untitled

    Abstract: No abstract text available
    Text: FCH47N60NF N-Channel SupreMOS FRFET® MOSFET 600 V, 45.8 A, 65 mΩ Features Description o The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction SJ technology employing a deep trench filling process that differentiates it from


    Original     		PDF FCH47N60NF

    c2m0080120

    Abstract: Cree SiC MOSFET CPM2-1200-0080B C2M0080120D
    Text: VDS 1200 V ID @ 25˚C 31.6 A CPM2-1200-0080B Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 80 mΩ N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on)


    Original     		PDF CPM2-1200-0080B CPM2-1200-0080B c2m0080120 Cree SiC MOSFET C2M0080120D

    3 phase pfc

    Abstract: CCS050M12CM2 Cree SiC MOSFET
    Text: CCS050M12CM2 VDS 1.2 kV 1.2kV, 50A Silicon Carbide Six-Pack Three Phase Module Z-FETTM MOSFET and Z-RecTM Diode Features • • • • • • 25 mΩ EOFF (TJ = 150˚C) 0.6 mJ Package Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current


    Original     		PDF CCS050M12CM2 CCS050M12CM2 3 phase pfc Cree SiC MOSFET

    mosfet 1200V

    Abstract: cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET CMF20120D IXDI414 DMOS SiC JEDEC24 RB160M-60
    Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FET MOSFET Rev. CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode VDS = 1200 V


    Original     		PDF CMF20120D-Silicon CMF20120D O-247-3 CMF20120D mosfet 1200V cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET IXDI414 DMOS SiC JEDEC24 RB160M-60

    CMF20120D

    Abstract: JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A
    Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FeTTM MOSFET Rev. A CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V RDS on = 80 mΩ N-Channel Enhancement Mode


    Original     		PDF CMF20120D-Silicon CMF20120D O-247-3 CMF20120D JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A

    Untitled

    Abstract: No abstract text available
    Text: VDS 1200 V ID @ 25˚C 17.7 A CPM2-1200-0160B Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 160 mΩ N-Channel Enhancement Mode Features • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original     		PDF CPM2-1200-0160B CPM2-1200-0160B

    CCS020M12CM2

    Abstract: CPWR-AN13
    Text: CCS020M12CM2 1.2kV, 80 mΩ Silicon Carbide Six-Pack Three Phase Module C2M MOSFET and Z-Rec Diode 1.2 kV RDS(on) 80 mΩ Esw, Total @ 20A, 150 ˚C Features • • • • • • • VDS 0.48 mJ Package Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode


    Original     		PDF CCS020M12CM2 CPWR-AN12, CPWR-AN13] CCS020M12CM2 CPWR-AN13

    CAS100H12

    Abstract: No abstract text available
    Text: CAS100H12AM1 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode VDS 1.2 kV RDS on (TJ = 25˚C) Not recommended for new designs. Replacement part: CAS120M12BM2 EOFF (TJ = 125˚C) Features • • • • • • 1.8 mJ Package


    Original     		PDF CAS100H12AM1 CAS120M12BM2 CAS100H12AM1 CAS100H12

    Untitled

    Abstract: No abstract text available
    Text: CAS300M12BM2 VDS 1.2 kV 1.2kV, 5.0 mΩ All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-RecTM Diode Esw, Total @ 300A RDS on Features • • • • • • • Package 5.0 mΩ 62mm x 106mm x 30mm Enables Compact and Lightweight Systems High Efficiency Operation


    Original     		PDF CAS300M12BM2 106mm CAS300M12BM2

    CPWR-AN12

    Abstract: CAS100H12AM1
    Text: CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode Features • • • • • • 16 mΩ EOFF TJ = 125˚C 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode


    Original     		PDF CAS100H12AM1 CAS100H12AM1 CPWR-AN12

    Cree SiC MOSFET

    Abstract: No abstract text available
    Text: CAS300M17BM2 1.7kV, 8.0 mΩ All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec Diode 1.7 kV RDS on 8.0 mΩ Esw, Total @ 300A, 150 ˚C Features • • • • • • • VDS Package 23.7 mJ 62mm x 106mm x 30mm Ultra Low Loss High-Frequency Operation


    Original     		PDF CAS300M17BM2 106mm CPWR-AN12, CPWR-AN13] CAS300M17BM2 Cree SiC MOSFET

    transistor b2u

    Abstract: No abstract text available
    Text: Section 12: SEMISTACK Power Semiconductor Assemblies with Diodes, Thyristors, SEMIPACK Modules or SEMIPONT Bridge Rectifiers as well as SEMITRANSIGBT, MOSFET and Darlington Transistor Modules from 10 to 1000’s of Amps; 12 Voc to over 1000 Vrms mains using


    OCR Scan     		PDF