470 860 MHZ PCB Search Results

470 860 MHZ PCB Result Highlights (5)

Part	Manufacturer	Description
ZLEDPCB2	Renesas Electronics Corporation	LED Test PCBs
ZLEDPCB10	Renesas Electronics Corporation	LED Test PCB - 12x 0.5W
ZLEDPCB1B	Renesas Electronics Corporation	LED Test PCB - 3W
ZLEDPCB8	Renesas Electronics Corporation	LED Test PCB - 5W
RPI96B3TJ12P1LF	Amphenol Communications Solutions	DIN PCB ACCESSORIES

470 860 MHZ PCB Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MRF373 Abstract: RO3010 A419 MRF373 PUSH PULL C14A MRF373 print circuit P1210 MRF373S atc 174 BUY13 Text: MOTOROLA The RF MOSFET Line MRF373 MRF373S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 470 – 860 MHz, 60 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this	Original	MRF373 MRF373S MRF373) MRF373 DEVICEMRF373/D RO3010 A419 MRF373 PUSH PULL C14A MRF373 print circuit P1210 MRF373S atc 174 BUY13	PDF
marking c14a Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of	Original	MRF372 MRF372R3 MRF372R5 MRF372R3 marking c14a	PDF
heraeus Abstract: uhf pcb antenna VJ6040 WO2008154173 Heraeus PD 860002 SA Text: VJ 6040 Vishay Vitramon VJ 6040 UHF Chip Antenna for Mobile Devices FEATURES • Small outline 10.5 mm x 15.5 mm x 1.2 mm • Omni-directional, linear polarization • Complies with MBRAI standard • Complete UHF band coverage (470 MHz to 860 MHz) up to 1.1 GHz	Original	WO2008250262 US2008303720 US2008305750 WO2008154173 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 heraeus uhf pcb antenna VJ6040 WO2008154173 Heraeus PD 860002 SA	PDF
MRF373A Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF373A Rev. 7, 9/2008 RF Power Field Effect Transistors MRF373ALR1 MRF373ALSR1 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these	Original	MRF373A MRF373ALR1 MRF373ALSR1 MRF373ALR1 MRF373A	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6VP3091N Rev. 1, 12/2011 RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast	Original	MRF6VP3091N MRF6VP3091NR1 MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5	PDF
Untitled Abstract: No abstract text available Text: VJ 6040 Vishay Vitramon VJ 6040 UHF Chip Antenna for Mobile Devices FEATURES • Small outline 10.5 mm x 15.5 mm x 1.2 mm • Omni-directional, linear polarization • Complies with MBRAI standard • Complete UHF band coverage (470 MHz to 860 MHz) up to 1.1 GHz	Original	WO2008250262 US2008303720 US2008305750 WO2008154173 2002/95/EC 11-Mar-11	PDF
MRF6V3090N Abstract: MRF6V3090NR1 MRF6V3090NBR5 mrf6v3090 DVB-T Schematic CRCW120610ROJNEA AN1955 CRCW120610KOJNEA mrf6v3090nr GPS50 Text: Freescale Semiconductor Technical Data Document Number: MRF6V3090N Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast	Original	MRF6V3090N MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 MRF6V3090N MRF6V3090NBR5 mrf6v3090 DVB-T Schematic CRCW120610ROJNEA AN1955 CRCW120610KOJNEA mrf6v3090nr GPS50	PDF
Vj3640Y Abstract: transistor L1A Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device	Original	MRF374/D MRF374 Vj3640Y transistor L1A	PDF
UT-141A-TP Abstract: NIPPON CAPACITORS UT141A-TP MRFE6P3300H 863MHz dvbt 250GX-0300-55-22 AN1955 CDR33BX104AKYS JESD22-A114 Text: Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 2, 12/2009 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance	Original	MRFE6P3300H MRFE6P3300HR3 UT-141A-TP NIPPON CAPACITORS UT141A-TP MRFE6P3300H 863MHz dvbt 250GX-0300-55-22 AN1955 CDR33BX104AKYS JESD22-A114	PDF
tantulum capacitor Abstract: 8VSB NIPPON CAPACITORS datasheet dvbt transmitter dvbt transmitter ECE capacitor rf push pull mosfet power amplifier A114 Nippon chemi AN1955 Text: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 0, 9/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance	Original	MRF6P3300H MRF6P3300HR3 MRF6P3300HR5 MRF6P3300HR3 tantulum capacitor 8VSB NIPPON CAPACITORS datasheet dvbt transmitter dvbt transmitter ECE capacitor rf push pull mosfet power amplifier A114 Nippon chemi AN1955	PDF
NIPPON CAPACITORS Abstract: dvbt tantulum capacitor A114 A115 AN1955 C101 JESD22 MRF6P3300H MRF6P3300HR3 Text: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance	Original	MRF6P3300H MRF6P3300HR3 MRF6P3300HR5 MRF6P3300HR3 NIPPON CAPACITORS dvbt tantulum capacitor A114 A115 AN1955 C101 JESD22 MRF6P3300H	PDF
MRF377H Abstract: dvbt transmitter MRF377HR3 resistor kyocera 845 motherboard circuit nippon capacitors MRF377 2508051107Y0 64 QAM Transmitter Nippon chemi Text: Freescale Semiconductor Technical Data MRF377H Rev. 0, 1/2005 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these	Original	MRF377H MRF377HR3 MRF377HR5 MRF377HR3 MRF377H dvbt transmitter resistor kyocera 845 motherboard circuit nippon capacitors MRF377 2508051107Y0 64 QAM Transmitter Nippon chemi	PDF
transistor amplifier 1ghz 1400 watts Abstract: nippon capacitors 0603HC-10NXJB Nippon chemi Text: MRF377 Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF377 MRF377R3 MRF377R5 transistor amplifier 1ghz 1400 watts nippon capacitors 0603HC-10NXJB Nippon chemi	PDF
T491D106K010AT Abstract: MRF377H PCN13170 nippon capacitors dvbt dvbt transmitter MRF377 T491D106K050at 3A412 Nippon chemi Text: Freescale Semiconductor Technical Data Document Number: MRF377H Rev. 2, 3/2009 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377HR3 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these	Original	MRF377H MRF377HR3 T491D106K010AT MRF377H PCN13170 nippon capacitors dvbt dvbt transmitter MRF377 T491D106K050at 3A412 Nippon chemi	PDF

Untitled Abstract: No abstract text available Text: Document Number: MRF377H Rev. 2, 3/2009 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these	Original	MRF377H MRF377HR3	PDF
marking WB4 Abstract: NIPPON CHEMI nippon capacitors Text: Freescale Semiconductor Technical Data Document Number: MRF377H Rev. 1, 5/2006 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these	Original	MRF377H MRF377HR3 MRF377HR5 MRF377H marking WB4 NIPPON CHEMI nippon capacitors	PDF
vitramon VJ Abstract: Heraeus PD 860002 SA Text: VJ 6040 Vishay Vitramon VJ 6040 UHF Chip Antenna for Mobile Devices FEATURES • Small outline 10.5 mm x 15.5 mm x 1.2 mm • Omni directional, linear polarization • Complies with MBRAI standard • Complete UHF band coverage (470 MHz to 860 MHz) • Requires a tuning circuit and ground plane for optimal	Original	WO2008250262 US2008303720 US2008305750 WO2008154173 2002/95/EC 18-Jul-08 vitramon VJ Heraeus PD 860002 SA	PDF
BLF642 Abstract: No abstract text available Text: NXP LDMOS RF power transistors BLF88x, BLF879P & BLF642 RF power UHF/DVB-T broadcasting at its best Supporting all broadcast amplifier designs in the 470 to 860 MHz band, this complete family of transistors delivers up to one octave wideband operation combined with field-proven ruggedness,	Original	BLF88x, BLF879P BLF642 BLF888B OT539 BLF642	PDF
MRF373A Abstract: MRF373ALSR1 MRF373AR1 MRF373AS 845MHz Text: MOTOROLA Order this document by MRF373A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these	Original	MRF373A/D MRF373AR1 MRF373ALSR1 MRF373A MRF373ALSR1 MRF373AS 845MHz	PDF
MRF373A Abstract: No abstract text available Text: MOTOROLA Order this document by MRF373A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this	Original	MRF373A/D MRF373A MRF373AS	PDF
transistor L1A Abstract: 1206 capacitor chip pads layout rogers capacitor bc17a 470 860 mhz PCB Text: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF374A/D MRF374A MRF374A/D transistor L1A 1206 capacitor chip pads layout rogers capacitor bc17a 470 860 mhz PCB	PDF
transistor j352 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this	Original	MRF374A/D MRF374A transistor j352	PDF
c19a Abstract: motorola rf power chip resistor 1206 BUY13 C14A LDMOS push pull MRF373 MRF373 PUSH PULL MRF373R1 MRF373SR1 Text: MOTOROLA RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment.	Original	MRF373R1 MRF373SR1 MRF373R1 MRF373/D c19a motorola rf power chip resistor 1206 BUY13 C14A LDMOS push pull MRF373 MRF373 PUSH PULL MRF373SR1	PDF
Untitled Abstract: No abstract text available Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this	Original	MRF374/D MRF374 28rola,	PDF

470 860 MHZ PCB Search Results

470 860 MHZ PCB Result Highlights (5)

470 860 MHZ PCB Datasheets Context Search

MRF373

marking c14a

heraeus

MRF373A

Untitled

Untitled

MRF6V3090N

Vj3640Y

UT-141A-TP

tantulum capacitor

NIPPON CAPACITORS

MRF377H

transistor amplifier 1ghz 1400 watts

T491D106K010AT

Untitled

marking WB4

vitramon VJ

BLF642

MRF373A

MRF373A

transistor L1A

transistor j352

c19a

Untitled