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    473 MARKING CODE TRANSISTOR Search Results

    473 MARKING CODE TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    473 MARKING CODE TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFR360T

    Abstract: BCR108T E6327 SC75 TRANSISTOR MARKING NK infineon marking code L2 fbs MARKING TRANSISTOR transistor marking code 325
    Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360T VPS05996 BFR360T BCR108T E6327 SC75 TRANSISTOR MARKING NK infineon marking code L2 fbs MARKING TRANSISTOR transistor marking code 325

    marking FB

    Abstract: No abstract text available
    Text: BFR360T NPN Silicon RF Transistor* • Low voltage/ low current operation • For low noise amplifiers 2 3 1 • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360T marking FB

    BFP36

    Abstract: No abstract text available
    Text: BFP360W NPN Silicon RF Transistor 3 Preliminary data 4  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFP360W VPS05605 OT343 BFP36

    ntc 1,0 0334

    Abstract: No abstract text available
    Text: NTC SMD Thermistors With Nickel Barrier Termination NB 21 - NB 23 Chip thermistors are high quality and low cost devices especially developed for surface mounting applications. They are widely used for temperature compensation but can also achieve temperature control of printed circuits.


    Original     		PDF

    lidar ACC

    Abstract: airbag
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . capacitors VJ.31 / VJ.34 • Automotive Applications • Product Range • AEC-Q200 Testing • Part Numbering w w w. v i s h a y. c o m instructional G uide Vishay Vitramon Automotive MLCC s Surface-Mount Multilayer


    Original     		PDF AEC-Q200 AEC-Q-200 VMN-SG2142-0808 lidar ACC airbag

    Untitled

    Abstract: No abstract text available
    Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation 3 • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz 1 2 *Short-term description ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360L3

    transitor RF 98

    Abstract: BFR360F E6327 GMA marking
    Text: BFR360F NPN Silicon RF Transistor Preliminary data  Low voltage/ low current operation 2 3  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 1  Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360F transitor RF 98 BFR360F E6327 GMA marking

    CDR03 receiver module

    Abstract: CDR03 receiver 9926 mosfet Optoelectronics Device data Zener diode smd marking code 621 "Piezoelectric Sensor" sun chemical un 1210 array resistor 9926 ceramic disc 104 aec capacitors Zener diode smd marking code w1
    Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book surface mount MUltilayer Ceramic chip capacitors vishay vse-db0097-0805 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vse-db0097-0805 CDR03 receiver module CDR03 receiver 9926 mosfet Optoelectronics Device data Zener diode smd marking code 621 "Piezoelectric Sensor" sun chemical un 1210 array resistor 9926 ceramic disc 104 aec capacitors Zener diode smd marking code w1

    BFR360L3

    Abstract: BFR193L3
    Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • For low noise amplifiers 3 • For Oscillators up to 3.5 GHz and Pout > 10 dBm 1 2 • Low noise figure: 1.0 dB at 1.8 GHz *Short-term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360L3 BFR360L3 BFR193L3

    BFR360L3

    Abstract: BFR193L3
    Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • For low noise amplifiers 3 • For Oscillators up to 3.5 GHz and Pout > 10 dBm 1 2 • Low noise figure: 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


    Original     		PDF BFR360L3 BFR360L3 BFR193L3

    RF NPN POWER TRANSISTOR C 10-12 GHZ

    Abstract: BFR360F TRANSISTOR MARKING NK
    Text: BFR360F NPN Silicon RF Transistor* • Low voltage/ low current operation • For low noise amplifiers 2 3 1 • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


    Original     		PDF BFR360F RF NPN POWER TRANSISTOR C 10-12 GHZ BFR360F TRANSISTOR MARKING NK

    Untitled

    Abstract: No abstract text available
    Text: BFR360F NPN Silicon RF Transistor* • Low voltage/ low current operation 2 3 • For low noise amplifiers 1 • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360F

    BF 331 TRANSISTORS

    Abstract: thermistor NTC 0223 smd marking d4 SMD Transistors series nc
    Text: NTC SMD Thermistors With Nickel Barrier Termination NB 21 - NB 23 Chip thermistors are high quality and low cost devices especially developed for surface mounting applications. They are widely used for temperature compensation but can also achieve temperature control of printed circuits.


    Original     		PDF 60-90s BF 331 TRANSISTORS thermistor NTC 0223 smd marking d4 SMD Transistors series nc

    tokin 473 5.5v

    Abstract: tokin fyh 5.5v tokin 473 0,47F, 5,5v, FYD 5,5v 473 220 microfarad 35v electrolytic capacitor tokin 0.47f 5.5v FR tokin 0,047F 5.5v FYD .047F tokin fyh 5.5v 0.47F
    Text: SUPERCAPACITOR WORLD WIDE WEB EC-200E SUPERCAPACITORS ELECTRIC DOUBLE-LAYER CAPACITORS Vol.02 CONTENTS TOKIN SUPERCAPACITORS / WORLD WIDE WEB ORGANIZATION OF SUPERCAPACITOR SERIES 3 BACKUP PERFORMANCE SELECTION 3 OPERATING PRINCIPLES 4 TYPICAL APPLICATIONS


    Original     		PDF EC-200E tokin 473 5.5v tokin fyh 5.5v tokin 473 0,47F, 5,5v, FYD 5,5v 473 220 microfarad 35v electrolytic capacitor tokin 0.47f 5.5v FR tokin 0,047F 5.5v FYD .047F tokin fyh 5.5v 0.47F

    Untitled

    Abstract: No abstract text available
    Text: • bb53^31 0025b31 S3? H A P X N AMER PHILIPS/DISCRETE BST15 BST16 b7E V J V. SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in m iniature plastic envelopes intended fo r use in am plifier and switching applications Complementary types are BST39/40.


    OCR Scan     		PDF 0025b31 BST15 BST16 BST39/40. bbS3T31 0025b33

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES BSP130 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. SYMBOL DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use


    OCR Scan     		PDF BSP130 OT223

    BCW72

    Abstract: marking k2P BCW71 k1p sot-23 BC710 ScansUX40
    Text: 711002b DQbßSS3 3 ^ «PHIN BCW71 BCW72 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a microminiature plastic envelope, intended for low level general purpose appli­ cations in thick and thin-film circuits. QUICK REFERENCE DATA BCW71 BCW72 D.C. current gain at Tj = 25 °C


    OCR Scan     		PDF 711002b BCW71 BCW72 BCW72 7110fi2b 7Z68032 marking k2P k1p sot-23 BC710 ScansUX40

    BC 170 transistor

    Abstract: bc 471 transistor bc 470 Q62702-C2320 6bs transistor SOT-323 N transistor 6cs 1B marking transistor marking 6Bs bc 170 c sot 323 lb
    Text: SIEMENS BC 817W BC 818W NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807W, BC808W PNP Type Marking Ordering Code BC 817-16W


    OCR Scan     		PDF BC807W, BC808W 17-16W 17-25W 17-40W 18-16W 18-25W 18-40W Q62702-C2320 Q62702-C2278 BC 170 transistor bc 471 transistor bc 470 6bs transistor SOT-323 N transistor 6cs 1B marking transistor marking 6Bs bc 170 c sot 323 lb

    Untitled

    Abstract: No abstract text available
    Text: • bbSBTBl QOSMSfl? 70S H A P X N AHER PHILIPS/DISCRETE BCW71 BCW72 b?E D ; v SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a microminiature plastic envelope, intended for low level general purpose appli­ cations in thick and thin-film circuits.


    OCR Scan     		PDF BCW71 BCW72 bbS3T31 D054ST1

    Siemens SRS 20

    Abstract: marking BSs sot23 n1215 marking SRs SOT marking BSs sot23 siemens
    Text: SIEMENS B S S 131 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 1 Pin 2 G Type BSS 131 Vbs 240 V b 0.1 A Type BSS 131 BSS 131 Ordering Code Q62702-S565 Q67000-S229 flDS(on) 16 Q Pin 3 S Package


    OCR Scan     		PDF OT-23 Q62702-S565 Q67000-S229 E6327 E6433 OT-23 Siemens SRS 20 marking BSs sot23 n1215 marking SRs SOT marking BSs sot23 siemens

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS BFP 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA f l —7GHz • F = 2 .1 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF 900MHz Q62702-F1377 OT-143 fiB35b05 fl23SbOS

    marking code 2t7

    Abstract: marking k2P Y474 BCW72 marking ATB ap 474 marking k1p marking KlP SOT-23 BCW71 k1p sot-23
    Text: • bbSBTBl 0QEH5&7 70S H A P X N AP1ER PHILIPS/DISCRETE BCW71 BCW72 b?E » SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a microminiature plastic envelope, intended for low level general purpose appli­ cations in thick and thin-film circuits.


    OCR Scan     		PDF BCW71 BCW72 OT-23. marking code 2t7 marking k2P Y474 BCW72 marking ATB ap 474 marking k1p marking KlP SOT-23 BCW71 k1p sot-23

    transistor 473

    Abstract: X0N60S5 siemens electrical devices
    Text: SIEMENS SPHX0N60S5 Target data sheet Cool MOS Power Transistor • Worldwide best/ì S on) in TO 218 • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • di^d/rated 1 2 3 • 150°C operating temperature G D S Type SPHX0N60S5


    OCR Scan     		PDF SPHX0N60S5 SPHX0N60S5 X0N60S5 P-T0218-3-1 transistor 473 siemens electrical devices

    Untitled

    Abstract: No abstract text available
    Text: BSS 229 Infineon technologies SIPMOS Small-Signal Transistor • • • • • • • VDS 250 V /0 0.07 A ^DS on 1 0 0 i l N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Pin C onfigu ration Marking Tape and Reel Inform ation


    OCR Scan     		PDF Q62702-S600 E6296 SS229 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 G133771