48 13NG MOSFET Search Results

48 13NG MOSFET Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
MG800FXF1JMS3		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

48 13NG MOSFET Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
13ng Abstract: NTD4813N 4813NG NTD4813N-1G 369D 4813N 369ac Text: NTD4813N Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com	Original	PDF	NTD4813N NTD4813N/D 13ng NTD4813N 4813NG NTD4813N-1G 369D 4813N 369ac
48 13ng mosfet Abstract: 48 13ng Text: NTD4813N Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	PDF	NTD4813N NTD4813N/D 48 13ng mosfet 48 13ng
369D Abstract: NTD4813N Text: NTD4813N Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com	Original	PDF	NTD4813N NTD4813N/D 369D NTD4813N
4813N Abstract: No abstract text available Text: NTD4813N Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	PDF	NTD4813N NTD4813N/D 4813N
48 13ng mosfet Abstract: 369D NTD4813N 4813ng Text: NTD4813N Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com	Original	PDF	NTD4813N NTD4813N/D 48 13ng mosfet 369D NTD4813N 4813ng
48 13ng mosfet Abstract: 369C 369D NTD4813N NTD4813NT4G TF 241 Text: NTD4813N Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	PDF	NTD4813N NTD4813N/D 48 13ng mosfet 369C 369D NTD4813N NTD4813NT4G TF 241
48 13ng mosfet Abstract: NTD4813N Text: NTD4813N Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	PDF	NTD4813N NTD4813N/D 48 13ng mosfet
Untitled Abstract: No abstract text available Text: NTD4813N Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com	Original	PDF	NTD4813N NTD4813N/D