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    WQFN10

    Abstract: 488AQ
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WQFN10, 1.4x1.8, 0.4P CASE 488AQ-01 ISSUE C DATE 19 JUN 2007 1 SCALE 5:1 D ÉÉ ÉÉ ÉÉ PIN 1 REFERENCE 2X 2X 0.15 C M1 E DETAIL A Bottom View Optional 0.15 C B EXPOSED Cu A 0.10 C 0.08 C A1 A1 A3 3 9X NOTES:


    Original     		PDF WQFN10, 488AQ-01 488AQ WQFN10 488AQ

    NLAS4717EPMTR2G

    Abstract: NLAS4717EP MAX4717 NLAS4717EPFCT1G
    Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717EP NLAS4717EP WQFN-10: WQFN-10 488AQ NLAS4717EP/D NLAS4717EPMTR2G MAX4717 NLAS4717EPFCT1G

    NLAS5223

    Abstract: NLAS5223L NLAS5223LMNR2G NLAS5223MNR2G WQFN10
    Text: NLAS5223, NLAS5223L Ultra-Low 0.5 W Dual SPDT Analog Switch The NLAS5223 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, at VCC = 3.0 $ 0.3 V.


    Original     		PDF NLAS5223, NLAS5223L NLAS5223 NLAS5223L NLAS5223/D NLAS5223LMNR2G NLAS5223MNR2G WQFN10

    NLAS5223B

    Abstract: NLAS5223BL NLAS5223BLMNR2G NLAS5223BMNR2G WQFN10 WQFN-10
    Text: NLAS5223B, NLAS5223BL Ultra−Low 0.5 W Dual SPDT Analog Switch The NLAS5223B is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, at VCC = 3.0 V.


    Original     		PDF NLAS5223B, NLAS5223BL NLAS5223B NLAS5223BL NLAS5223B/D NLAS5223BLMNR2G NLAS5223BMNR2G WQFN10 WQFN-10

    Untitled

    Abstract: No abstract text available
    Text: NLAS7222A High-Speed USB 2.0 480 Mbps DPDT Switch ON Semiconductor’s NLAS7222A series of analog switch circuits are produced using the company’s advanced sub−micron CMOS technology, achieving industry−leading performance. The NLAS7222A is a 2− to 1−port analog switch. Its wide


    Original     		PDF NLAS7222A NLAS7222A/D

    UQFN-10

    Abstract: No abstract text available
    Text: NLAS5223B, NLAS5223BL Ultra-Low 0.35 W Dual SPDT Analog Switch The NLAS5223B is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.35 W, at VCC = 4.3 V.


    Original     		PDF NLAS5223B, NLAS5223BL NLAS5223B WQFN10 488AQ UQFN10 488AT NLAS5228B/D UQFN-10

    Untitled

    Abstract: No abstract text available
    Text: NS5A4684S Ultra-Low Resistance Dual SPDT Analog Switch The NS5A4684S is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.6 W.


    Original     		PDF NS5A4684S NS5A4684S NS5A4684S/D

    Untitled

    Abstract: No abstract text available
    Text: NS5A4684S Ultra-Low Resistance Dual SPDT Analog Switch The NS5A4684S is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.6 W.


    Original     		PDF NS5A4684S WQFN10 488AQ NS5A4684S/D

    405C

    Abstract: NLAS7222A NLAS7222AMTR2G WQFN10
    Text: NLAS7222A 3.3 V, Wide Bandwidth, 2− to −1−Port DPDT Switch with Enable ON Semiconductor’s NLAS7222A series of analog switch circuits are produced using the company’s advanced sub−micron CMOS technology, achieving industry−leading performance.


    Original     		PDF NLAS7222A NLAS7222A NLAS7222A/D 405C NLAS7222AMTR2G WQFN10

    NLAS5223

    Abstract: NLAS5223L NLAS5223LMNR2G NLAS5223MNR2G WQFN10
    Text: NLAS5223, NLAS5223L Ultra−Low 0.5 W Dual SPDT Analog Switch The NLAS5223 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, at VCC = 3.0 $ 0.3 V.


    Original     		PDF NLAS5223, NLAS5223L NLAS5223 NLAS5223L NLAS5223/D NLAS5223LMNR2G NLAS5223MNR2G WQFN10

    UQFN-10

    Abstract: UQFN-10 A3 UQFN-10 1.4 x 1.8 mm
    Text: NLAS5223B, NLAS5223BL Ultra−Low 0.5 W Dual SPDT Analog Switch The NLAS5223B is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, at VCC = 3.0 V.


    Original     		PDF NLAS5223B, NLAS5223BL NLAS5223B WQFN-10 488AQ UQFN-10 488AT NLAS5223B/D UQFN-10 A3 UQFN-10 1.4 x 1.8 mm

    Untitled

    Abstract: No abstract text available
    Text: NLAS7222A High-Speed USB 2.0 480 Mbps DPDT Switch ON Semiconductor’s NLAS7222A series of analog switch circuits are produced using the company’s advanced sub−micron CMOS technology, achieving industry−leading performance. The NLAS7222A is a 2− to 1−port analog switch. Its wide


    Original     		PDF NLAS7222A NLAS7222A NLAS7222A/D

    MAX4717

    Abstract: NLAS4717EP NLAS4717EPFCT1G NLAS4717EPMTR2G 4717EP
    Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717EP NLAS4717EP WQFN-10: Microbump-10 489AA 65not NLAS4717EP/D MAX4717 NLAS4717EPFCT1G NLAS4717EPMTR2G 4717EP

    UQFN-10

    Abstract: NLAS5223B NLAS5223BL NLAS5223BLMNR2G NLAS5223BMNR2G NLAS5223BMUR2G UQFN10 WQFN10
    Text: NLAS5223B, NLAS5223BL Ultra-Low 0.35 W Dual SPDT Analog Switch The NLAS5223B is an advanced CMOS analog switch fabricated in Sub-micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra-Low RON of 0.35 W, at VCC = 4.3 V.


    Original     		PDF NLAS5223B, NLAS5223BL NLAS5223B NLAS5223BL NLAS5223B/D UQFN-10 NLAS5223BLMNR2G NLAS5223BMNR2G NLAS5223BMUR2G UQFN10 WQFN10

    405C

    Abstract: NLAS7222A NLAS7222AMTR2G NLAS7222AMUR2G
    Text: NLAS7222A High−Speed USB 2.0 480 Mbps DPDT Switch ON Semiconductor’s NLAS7222A series of analog switch circuits are produced using the company’s advanced sub−micron CMOS technology, achieving industry−leading performance. The NLAS7222A is a 2− to 1−port analog switch. Its wide


    Original     		PDF NLAS7222A NLAS7222A NLAS7222A/D 405C NLAS7222AMTR2G NLAS7222AMUR2G

    NLAS7222A

    Abstract: NLAS7222AMTR2G UQFN10 WQFN10 HSD17 UQFN-10
    Text: NLAS7222A High-Speed USB 2.0 480 Mbps DPDT Switch ON Semiconductor's NLAS7222A series of analog switch circuits are produced using the company's advanced sub-micron CMOS technology, achieving industry-leading performance. The NLAS7222A is a 2- to 1-port analog switch. Its wide


    Original     		PDF NLAS7222A NLAS7222A NLAS7222A/D NLAS7222AMTR2G UQFN10 WQFN10 HSD17 UQFN-10

    Untitled

    Abstract: No abstract text available
    Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717EP NLAS4717EP 4717EP 489AA NLAS4717EP/D

    4717EP

    Abstract: No abstract text available
    Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717EP WQFN-10: 4717EP Microbump-10 489AA NLAS4717EP/D

    NLAS5223B

    Abstract: NLAS5223BL NLAS5223BLMNR2G NLAS5223BMNR2G NLAS5223BMUR2G WQFN10 UQFN-10 UQFN-10 A3 UQFN-10 1.4 x 1.8 mm UQFN10
    Text: NLAS5223B, NLAS5223BL Ultra−Low 0.5 W Dual SPDT Analog Switch The NLAS5223B is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, at VCC = 3.0 V.


    Original     		PDF NLAS5223B, NLAS5223BL NLAS5223B WQFN-10 488AQ NLAS5223BMNR2G NLAS5223BLMNR2G NLAS5223BMUR2G NLAS5223B/D NLAS5223BL NLAS5223BLMNR2G NLAS5223BMNR2G NLAS5223BMUR2G WQFN10 UQFN-10 UQFN-10 A3 UQFN-10 1.4 x 1.8 mm UQFN10

    405C

    Abstract: NLAS7222A NLAS7222AMTR2G NLAS7222AMUR2G
    Text: NLAS7222A High−Speed USB 2.0 480 Mbps DPDT Switch ON Semiconductor’s NLAS7222A series of analog switch circuits are produced using the company’s advanced sub−micron CMOS technology, achieving industry−leading performance. The NLAS7222A is a 2− to 1−port analog switch. Its wide


    Original     		PDF NLAS7222A NLAS7222A NLAS7222A/D 405C NLAS7222AMTR2G NLAS7222AMUR2G

    Untitled

    Abstract: No abstract text available
    Text: SLAS5223 Ultra-Low 0.5 W Dual SPDT Analog Switch The SLAS5223 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, at VCC = 3.0 $ 0.3 V.


    Original     		PDF SLAS5223 SLAS5223 SLAS5223/D

    488AT-01

    Abstract: UQFN-10
    Text: NLAS5223B, NLAS5223BL Ultra-Low 0.5 W Dual SPDT Analog Switch The NLAS5223B is an advanced CMOS analog switch fabricated in Sub-micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra-Low RON of 0.5 W, at VCC = 3.0 V.


    Original     		PDF NLAS5223B, NLAS5223BL NLAS5223B WQFN10 488AQ UQFN10 488AT NLAS5223B/D 488AT-01 UQFN-10

    UQFN-10 A3

    Abstract: NLAS7222
    Text: NLAS7222B, NLAS7222C High-Speed USB 2.0 480 Mbps DPDT Switches ON Semiconductor's NLAS7222B and NLAS7222C are part of a series of analog switch circuits that are produced using the company's advanced sub-micron CMOS technology, achieving industry-leading


    Original     		PDF NLAS7222B, NLAS7222C NLAS7222B NLAS7222B/D UQFN-10 A3 NLAS7222

    Untitled

    Abstract: No abstract text available
    Text: NLAS5223B, NLAS5223BL Ultra-Low 0.35 W Dual SPDT Analog Switch The NLAS5223B is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.35 W, at VCC = 4.3 V.


    Original     		PDF NLAS5223B, NLAS5223BL NLAS5223B WQFN10 488AQ NLAS5223BMNR2G NLAS5223BLMNR2G NLAS5223BMUR2G NLAS5228B/D