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    NLAS4717EPFCT1G Price and Stock

    onsemi NLAS4717EPFCT1G

    IC SW SPDTX2 3.5OHM 10MICROBUMP
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    DigiKey NLAS4717EPFCT1G Cut Tape 2,135 1
    • 1 $1.5
    • 10 $1.341
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    • 1000 $0.68175
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    NLAS4717EPFCT1G Digi-Reel 1
    • 1 $1.5
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    Avnet Americas NLAS4717EPFCT1G Reel 0 Weeks, 2 Days 1,283
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    NLAS4717EPFCT1G Reel 4 Weeks 530
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    • 1000 $0.6804
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    Verical NLAS4717EPFCT1G 30,150 12
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    NLAS4717EPFCT1G 500 107
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    Newark NLAS4717EPFCT1G Reel 3,000
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    Quest Components NLAS4717EPFCT1G 6,000
    • 1 $1.3179
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    • 1000 $1.3179
    • 10000 $0.4613
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    Rochester Electronics NLAS4717EPFCT1G 21,965 1
    • 1 $0.6891
    • 10 $0.6891
    • 100 $0.6478
    • 1000 $0.5857
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    Chip1Stop NLAS4717EPFCT1G 30,150
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    NLAS4717EPFCT1G 500
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    Flip Electronics NLAS4717EPFCT1G 45,000
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    NLAS4717EPFCT1G Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NLAS4717EPFCT1G On Semiconductor Dual SPDT High Bandwidth USB 2.0 Compliant Analog Switch; Package: 10 PIN FLIP-CHIP; No of Pins: 10; Container: Tape and Reel; Qty per Container: 3000 Original PDF
    NLAS4717EPFCT1G On Semiconductor 4.5 ohm High Bandwidth, Dual SPDT Analog Switch Original PDF

    NLAS4717EPFCT1G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NLAS4717EPMTR2G

    Abstract: NLAS4717EP MAX4717 NLAS4717EPFCT1G
    Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717EP NLAS4717EP WQFN-10: WQFN-10 488AQ NLAS4717EP/D NLAS4717EPMTR2G MAX4717 NLAS4717EPFCT1G

    MAX4717

    Abstract: NLAS4717EP NLAS4717EPFCT1G 489AA
    Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717EP NLAS4717EP Micro10: NLAS4717EP/D MAX4717 NLAS4717EPFCT1G 489AA

    Untitled

    Abstract: No abstract text available
    Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717EP Micro10: 4717EP 4717E Micro10 NLAS4717EP/D Microbump-10

    Untitled

    Abstract: No abstract text available
    Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717EP Micro10: 4717EP 4717E Micro10 NLAS4717EP/D Microbump-10

    MAX4717

    Abstract: NLAS4717EP NLAS4717EPFCT1G NLAS4717EPMTR2G 4717EP
    Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717EP NLAS4717EP WQFN-10: Microbump-10 489AA 65not NLAS4717EP/D MAX4717 NLAS4717EPFCT1G NLAS4717EPMTR2G 4717EP

    4717EP

    Abstract: MAX4717 NLAS4717EP NLAS4717EPFCT1G NLAS4717EPMTR2G
    Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub-micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717EP NLAS4717EP WQFN-10: 4717EP NLAS4717EP/D 4717EP MAX4717 NLAS4717EPFCT1G NLAS4717EPMTR2G

    Untitled

    Abstract: No abstract text available
    Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717EP NLAS4717EP 4717EP 489AA NLAS4717EP/D

    4717EP

    Abstract: No abstract text available
    Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717EP WQFN-10: 4717EP Microbump-10 489AA NLAS4717EP/D