Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NLAS4717EPMTR2G Search Results

    SF Impression Pixel

    NLAS4717EPMTR2G Price and Stock

    Rochester Electronics LLC NLAS4717EPMTR2G

    IC SWITCH SPDT X 2 3.5OHM 10WQFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NLAS4717EPMTR2G Bulk 492,698 643
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.47
    • 10000 $0.47
    		Buy Now

    onsemi NLAS4717EPMTR2G

    IC SWITCH SPDT X 2 3.5OHM 10WQFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NLAS4717EPMTR2G Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Quest Components NLAS4717EPMTR2G 155
    • 1 $0.9024
    • 10 $0.9024
    • 100 $0.4211
    • 1000 $0.4211
    • 10000 $0.4211
    		Buy Now
    Rochester Electronics NLAS4717EPMTR2G 492,698 1
    • 1 $0.4493
    • 10 $0.4493
    • 100 $0.4223
    • 1000 $0.3819
    • 10000 $0.3819
    		Buy Now
    Win Source Electronics NLAS4717EPMTR2G 4,300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.218
    • 10000 $0.189
    		Buy Now

    NLAS4717EPMTR2G Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NLAS4717EPMTR2G On Semiconductor Dual SPDT High Bandwidth USB 2.0 Compliant Analog Switch; Package: WQFN10 1.4 x 1.8, 0.4mm Pitch; No of Pins: 10; Container: Tape and Reel; Qty per Container: 3000 Original PDF
    NLAS4717EPMTR2G On Semiconductor 4.5 ohm High Bandwidth, Dual SPDT Analog Switch Original PDF

    NLAS4717EPMTR2G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NLAS4717EPMTR2G

    Abstract: NLAS4717EP MAX4717 NLAS4717EPFCT1G
    Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717EP NLAS4717EP WQFN-10: WQFN-10 488AQ NLAS4717EP/D NLAS4717EPMTR2G MAX4717 NLAS4717EPFCT1G

    MAX4717

    Abstract: NLAS4717EP NLAS4717EPFCT1G NLAS4717EPMTR2G 4717EP
    Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717EP NLAS4717EP WQFN-10: Microbump-10 489AA 65not NLAS4717EP/D MAX4717 NLAS4717EPFCT1G NLAS4717EPMTR2G 4717EP

    4717EP

    Abstract: MAX4717 NLAS4717EP NLAS4717EPFCT1G NLAS4717EPMTR2G
    Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub-micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717EP NLAS4717EP WQFN-10: 4717EP NLAS4717EP/D 4717EP MAX4717 NLAS4717EPFCT1G NLAS4717EPMTR2G

    Untitled

    Abstract: No abstract text available
    Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717EP NLAS4717EP 4717EP 489AA NLAS4717EP/D

    4717EP

    Abstract: No abstract text available
    Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717EP WQFN-10: 4717EP Microbump-10 489AA NLAS4717EP/D