IXYS’ Clare Introduces 2 New Gate Driver Families
Abstract: IXDN602 IXDD614 IXDN614 IXDI614 IXDI602 IXDF602 an 614 AN
Text: PRESS RELEASE Contact: Catherine Austin Clare, Inc. Ph: 978-524-6823 Fax: 978-524-4900 IXYS’ Clare Introduces 2 New Gate Driver Families IXD_602 and IXD_ 614 Gate Driver ICs are ideal for driving IXYS’ power MOSFETs and IGBTs Beverly, MA and Biel, Switzerland. September 14, 2010 - IXYS Corporation
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IXYS Clare Introduces New Family of 4A Dual-Channel Gate Drivers
Abstract: ixdi604 ixd 604 IXDN604 IXDD604 IXDF604 ixd_604 8pin dual gate driver
Text: PRESS RELEASE Contact: Catherine Austin Clare, Inc. Ph: 978-524-6823 Fax: 978-524-4900 IXYS Clare Introduces New Family of 4A Dual-Channel Gate Drivers IXD_604 Gate Driver ICs are ideal for driving IXYS power MOSFETs and IGBTs Beverly, MA and Biel, Switzerland. July 6, 2010 - IXYS Corporation NASDAQ:IXYS
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Clare Introduces Industry’s First LCAS IC for Ringing SLICs
Abstract: CPC7508 ixys
Text: PRESS RELEASE Contact: Catherine Austin Clare, Inc. Ph: 978-524-6823 Fax: 978-524-4900 Clare Introduces Industry’s First LCAS IC for Ringing SLICs New CPC7508 Line Card Access Switch LCAS IC Addresses Latest Customer Premises Equipment (CPE) Telephony Gateways such as Fiber-to-the-home, VoIP,
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CPC7508
CPC7508
Clare Introduces Industry’s First LCAS IC for Ringing SLICs
ixys
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UPD70F3524
Abstract: uPD70F3525 uPD70F3526 uPD70F3529 uPD70F3508 upd70f3523 uPD70F3506 UPD166017 uPD70F35 V850E2 uPD70F3526
Text: www.renesas.eu 2010.04 Product Scout Automotive fro s t c du o r p ws y! l o n h s o ew ics i n v o r r e t c ov e l s i E h C T E N r e form m Before actually using the product, Renesas urges users to refer to the latest product manual and/or data sheet in advance.
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X19136EE4V0PF00
78K0/KB2
PD78F0513AD
78K0/KC2
78K0/KD2
78K0/KE2
78K0/KF2
78K0/FY2-L
78K0/FA2-L
78K0/FB2-L
UPD70F3524
uPD70F3525
uPD70F3526
uPD70F3529
uPD70F3508
upd70f3523
uPD70F3506
UPD166017
uPD70F35
V850E2 uPD70F3526
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Untitled
Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ385 CASE OUTLINE: TO-218 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:
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O-218
BUZ385
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BUZ211
Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ211 CASE OUTLINE: TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:
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O-204AA
BUZ211
BUZ211
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CHL8325A
Abstract: No abstract text available
Text: Digital Multi-Phase Buck Controller FEATURES IR3541 CHL8325A/B DESCRIPTION • 5-phase dual output PWM Controller Phases are flexibly assigned between Loops 1 & 2 Intel VR12, AMD® 400kHz & 3.4MHz SVI and Memory modes The IR3541 and CHL8325A/B are dual-loop digital
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IR3541
CHL8325A/B
400kHz
IR3541
CHL8325A/B
IR3541/CHL8325A)
CHL8325A
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BUZ64
Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ64 CASE OUTLINE: TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:
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O-204AA
BUZ64
BUZ64
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buz210
Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ210 CASE OUTLINE: TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:
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O-204AA
BUZ210
buz210
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Untitled
Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ45B CASE OUTLINE: TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:
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O-204AA
BUZ45B
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BUZ382
Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ382 CASE OUTLINE: TO-247 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:
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O-247
BUZ382
BUZ382
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IXEP1400
Abstract: CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844
Text: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.
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CH-2555
N1016,
IXEP1400
CPC7601
CPC1907B
CPC1106N
CPC1004N
CPC1006N
CPC1009N
CPC1114N
CPC1333
IX21844
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STW20N60
Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal
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O-220,
ISOPLUS220TM,
O-247,
ISOPLUS247TM,
O-264,
ISOPLUS264TM.
PLUS220
ISOPLUS220TM
PLUS220SMD
O-252
STW20N60
2n60p
IXFB100N50
IXFB100N50P
STW20N60FD
IXFB100N50P TO-264
ixys ixfn100n50p
IXFN48n60p
IXFH30N60P
ixfn100n50p
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4810 mosfet
Abstract: No abstract text available
Text: SPICE Device Model SiJ458DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiJ458DP
18-Jul-08
4810 mosfet
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LBA716
Abstract: IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219
Text: Semiconductor Product Catalog IXYS Integrated Circuits Division In April, 2012, Clare, Inc., officially became IXYS Integrated Circuits Division. IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division
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N1016,
CH-2555
LBA716
IXDD630
DARLINGTON TRANSISTOR ARRAY
V/CPC3701
CPC1006N
CPC1014N
CPC1019N
CPC1219
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Untitled
Abstract: No abstract text available
Text: AP93T08GP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free BVDSS 80V RDS ON 4.6mΩ ID
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AP93T08GP-HF
AP93T08
O-220
100us
100ms
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Untitled
Abstract: No abstract text available
Text: IXTQ 120N15P IXTT 120N15P PolarHTTM Power MOSFET VDSS = ID25 = RDS on ≤ 150 V 120 A Ω 16 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 150 150
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120N15P
O-268
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AN-202
Abstract: CPC1590 isolated mosfet gate driver
Text: PRESS RELEASE Contact: Catherine Austin Clare, Inc. Ph: 978-524-6823 Fax: 978-524-4900 Clare Introduces 200 Volt Optically Isolated, Self Biased Gate Driver CPC1590 is specifically for remote switching of DC and low frequency loads where isolated power is unavailable
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CPC1590
CPC1590,
AN-202
isolated mosfet gate driver
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6N80
Abstract: IXTN 36N50 C 40N160 40N140 ixtn 79n20 30N45 irfp 240 IXTK33N50 IXTN21N100 IRFP
Text: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode t jm = 150°c ► New V p >D25 Tc = 25°C A DS on Tc = 25°C a 200 30 42 50 IRFP 254 250 ► IRFP 264 thJC K/W W 300 4 180 360 140 0.65 190 4600 285 400 220 0.42 300 360 max. max. max. 68
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67N10
75N10
42N20
50N20
68N20
35N30
40N30
30N45
12N50A
21N50
6N80
IXTN 36N50 C
40N160
40N140
ixtn 79n20
irfp 240
IXTK33N50
IXTN21N100
IRFP
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IRFP 640
Abstract: IRFP 260 M 6N80A 0 280 130 023 IRFP 24n50 5N10 IXTM20N60 6N90A 01N100
Text: Standard Power MOSFETs and MegaMOSmFETs T series Standard types t jm = ► New 150°c V T c = 25°C A R c es DS on Tc = 25°C Q tr typ. 25aC ns Qfl ^ th J C Po max. max. nC K/W W 260 0.42 300 6 180 285 360 400 140 220 0.65 0.42 190 300 150 280 370 370 140
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135XTP
01N100
1N100
2N100
2N100
100X2
01N100X3
O-251,
O-220AB
IRFP 640
IRFP 260 M
6N80A
0 280 130 023
IRFP
24n50
5N10
IXTM20N60
6N90A
01N100
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IRFP 260 M
Abstract: 5n100 6n80 42n20 12N50A IRFP IXTN 36N50 C 67N10 irfp 240
Text: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode Tjh = ► New IXTH IXTH IRFP IXTH IXTH IRFP IXTH IXTH IXTH IRFP IXTH IRFP IXTH ► IXTH IXTH IXTH ► IXTH ► IXTU ►IXTU IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH
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67N10
75N10
42N20
50N20
35N30
40N30
12N50A
21N50
24N50
30N50
IRFP 260 M
5n100
6n80
IRFP
IXTN 36N50 C
irfp 240
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BUZ 325
Abstract: BUZ45
Text: Standard Power MOSFETs BUZ 45 B File Number 2259 N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 500 V rD S on = 0.5 n N -C H A N N E L E N H A N C E M E N T M O D E Features: • SO A is power-dissipation limited m Nanosecond switching speeds
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O-204ig.
BUZ 325
BUZ45
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BUZ45A
Abstract: BUZ45 transistor 6.z transistor 125W
Text: Standard Power MOSFETs File Number BUZ 45 A 2258 N-Channel Enhancement-Mode Power Field-Effect Transistors 8.3 A, 500 V N-CHANNEL ENHANCEMENT MODE rDsioni = 0 .8 O Features: • SOA is power-diss/pation lim ited m N anosecond sw itching speeds a Linear transfer characteristics
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O-204AA
BUZ45A
BUZ45
transistor 6.z
transistor 125W
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Untitled
Abstract: No abstract text available
Text: SIEMENS SIMOPAC MOSFET Module BSM 651 F Vos = 500 V lD = 6 X 9 A ^DS on = 0.7 Q • • • • • • • Power m odule 3 -p ha se fu ll-b rid g e FREDFET N channel E nhancem ent m ode Package with insulated m etal base plate C ircuit diagram : Fig . 3 a ’ )
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7076-A
500-A
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