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    4900 MOSFET Search Results

    4900 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    4900 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXYS’ Clare Introduces 2 New Gate Driver Families

    Abstract: IXDN602 IXDD614 IXDN614 IXDI614 IXDI602 IXDF602 an 614 AN
    Text: PRESS RELEASE Contact: Catherine Austin Clare, Inc. Ph: 978-524-6823 Fax: 978-524-4900 IXYS’ Clare Introduces 2 New Gate Driver Families IXD_602 and IXD_ 614 Gate Driver ICs are ideal for driving IXYS’ power MOSFETs and IGBTs Beverly, MA and Biel, Switzerland. September 14, 2010 - IXYS Corporation


    Original     		PDF

    IXYS Clare Introduces New Family of 4A Dual-Channel Gate Drivers

    Abstract: ixdi604 ixd 604 IXDN604 IXDD604 IXDF604 ixd_604 8pin dual gate driver
    Text: PRESS RELEASE Contact: Catherine Austin Clare, Inc. Ph: 978-524-6823 Fax: 978-524-4900 IXYS Clare Introduces New Family of 4A Dual-Channel Gate Drivers IXD_604 Gate Driver ICs are ideal for driving IXYS power MOSFETs and IGBTs Beverly, MA and Biel, Switzerland. July 6, 2010 - IXYS Corporation NASDAQ:IXYS


    Original     		PDF

    Clare Introduces Industry’s First LCAS IC for Ringing SLICs

    Abstract: CPC7508 ixys
    Text: PRESS RELEASE Contact: Catherine Austin Clare, Inc. Ph: 978-524-6823 Fax: 978-524-4900 Clare Introduces Industry’s First LCAS IC for Ringing SLICs New CPC7508 Line Card Access Switch LCAS IC Addresses Latest Customer Premises Equipment (CPE) Telephony Gateways such as Fiber-to-the-home, VoIP,


    Original     		PDF CPC7508 CPC7508 Clare Introduces Industry’s First LCAS IC for Ringing SLICs ixys

    UPD70F3524

    Abstract: uPD70F3525 uPD70F3526 uPD70F3529 uPD70F3508 upd70f3523 uPD70F3506 UPD166017 uPD70F35 V850E2 uPD70F3526
    Text: www.renesas.eu 2010.04 Product Scout Automotive fro s t c du o r p ws y! l o n h s o ew ics i n v o r r e t c ov e l s i E h C T E N r e form m Before actually using the product, Renesas urges users to refer to the latest product manual and/or data sheet in advance.


    Original     		PDF X19136EE4V0PF00 78K0/KB2 PD78F0513AD 78K0/KC2 78K0/KD2 78K0/KE2 78K0/KF2 78K0/FY2-L 78K0/FA2-L 78K0/FB2-L UPD70F3524 uPD70F3525 uPD70F3526 uPD70F3529 uPD70F3508 upd70f3523 uPD70F3506 UPD166017 uPD70F35 V850E2 uPD70F3526

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ385 CASE OUTLINE: TO-218 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original     		PDF O-218 BUZ385

    BUZ211

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ211 CASE OUTLINE: TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original     		PDF O-204AA BUZ211 BUZ211

    CHL8325A

    Abstract: No abstract text available
    Text: Digital Multi-Phase Buck Controller FEATURES IR3541 CHL8325A/B DESCRIPTION • 5-phase dual output PWM Controller  Phases are flexibly assigned between Loops 1 & 2  Intel VR12, AMD® 400kHz & 3.4MHz SVI and Memory modes The IR3541 and CHL8325A/B are dual-loop digital


    Original     		PDF IR3541 CHL8325A/B 400kHz IR3541 CHL8325A/B IR3541/CHL8325A) CHL8325A

    BUZ64

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ64 CASE OUTLINE: TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original     		PDF O-204AA BUZ64 BUZ64

    buz210

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ210 CASE OUTLINE: TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original     		PDF O-204AA BUZ210 buz210

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ45B CASE OUTLINE: TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original     		PDF O-204AA BUZ45B

    BUZ382

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ382 CASE OUTLINE: TO-247 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original     		PDF O-247 BUZ382 BUZ382

    IXEP1400

    Abstract: CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.


    Original     		PDF CH-2555 N1016, IXEP1400 CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p

    4810 mosfet

    Abstract: No abstract text available
    Text: SPICE Device Model SiJ458DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiJ458DP 18-Jul-08 4810 mosfet

    LBA716

    Abstract: IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division In April, 2012, Clare, Inc., officially became IXYS Integrated Circuits Division. IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division


    Original     		PDF N1016, CH-2555 LBA716 IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219

    Untitled

    Abstract: No abstract text available
    Text: AP93T08GP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free BVDSS 80V RDS ON 4.6mΩ ID


    Original     		PDF AP93T08GP-HF AP93T08 O-220 100us 100ms

    Untitled

    Abstract: No abstract text available
    Text: IXTQ 120N15P IXTT 120N15P PolarHTTM Power MOSFET VDSS = ID25 = RDS on ≤ 150 V 120 A Ω 16 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 150 150


    Original     		PDF 120N15P O-268

    AN-202

    Abstract: CPC1590 isolated mosfet gate driver
    Text: PRESS RELEASE Contact: Catherine Austin Clare, Inc. Ph: 978-524-6823 Fax: 978-524-4900 Clare Introduces 200 Volt Optically Isolated, Self Biased Gate Driver CPC1590 is specifically for remote switching of DC and low frequency loads where isolated power is unavailable


    OCR Scan     		PDF CPC1590 CPC1590, AN-202 isolated mosfet gate driver

    6N80

    Abstract: IXTN 36N50 C 40N160 40N140 ixtn 79n20 30N45 irfp 240 IXTK33N50 IXTN21N100 IRFP
    Text: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode t jm = 150°c ► New V p >D25 Tc = 25°C A DS on Tc = 25°C a 200 30 42 50 IRFP 254 250 ► IRFP 264 thJC K/W W 300 4 180 360 140 0.65 190 4600 285 400 220 0.42 300 360 max. max. max. 68


    OCR Scan     		PDF 67N10 75N10 42N20 50N20 68N20 35N30 40N30 30N45 12N50A 21N50 6N80 IXTN 36N50 C 40N160 40N140 ixtn 79n20 irfp 240 IXTK33N50 IXTN21N100 IRFP

    IRFP 640

    Abstract: IRFP 260 M 6N80A 0 280 130 023 IRFP 24n50 5N10 IXTM20N60 6N90A 01N100
    Text: Standard Power MOSFETs and MegaMOSmFETs T series Standard types t jm = ► New 150°c V T c = 25°C A R c es DS on Tc = 25°C Q tr typ. 25aC ns Qfl ^ th J C Po max. max. nC K/W W 260 0.42 300 6 180 285 360 400 140 220 0.65 0.42 190 300 150 280 370 370 140


    OCR Scan     		PDF 135XTP 01N100 1N100 2N100 2N100 100X2 01N100X3 O-251, O-220AB IRFP 640 IRFP 260 M 6N80A 0 280 130 023 IRFP 24n50 5N10 IXTM20N60 6N90A 01N100

    IRFP 260 M

    Abstract: 5n100 6n80 42n20 12N50A IRFP IXTN 36N50 C 67N10 irfp 240
    Text: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode Tjh = ► New IXTH IXTH IRFP IXTH IXTH IRFP IXTH IXTH IXTH IRFP IXTH IRFP IXTH ► IXTH IXTH IXTH ► IXTH ► IXTU ►IXTU IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH


    OCR Scan     		PDF 67N10 75N10 42N20 50N20 35N30 40N30 12N50A 21N50 24N50 30N50 IRFP 260 M 5n100 6n80 IRFP IXTN 36N50 C irfp 240

    BUZ 325

    Abstract: BUZ45
    Text: Standard Power MOSFETs BUZ 45 B File Number 2259 N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 500 V rD S on = 0.5 n N -C H A N N E L E N H A N C E M E N T M O D E Features: • SO A is power-dissipation limited m Nanosecond switching speeds


    OCR Scan     		PDF O-204ig. BUZ 325 BUZ45

    BUZ45A

    Abstract: BUZ45 transistor 6.z transistor 125W
    Text: Standard Power MOSFETs File Number BUZ 45 A 2258 N-Channel Enhancement-Mode Power Field-Effect Transistors 8.3 A, 500 V N-CHANNEL ENHANCEMENT MODE rDsioni = 0 .8 O Features: • SOA is power-diss/pation lim ited m N anosecond sw itching speeds a Linear transfer characteristics


    OCR Scan     		PDF O-204AA BUZ45A BUZ45 transistor 6.z transistor 125W

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIMOPAC MOSFET Module BSM 651 F Vos = 500 V lD = 6 X 9 A ^DS on = 0.7 Q • • • • • • • Power m odule 3 -p ha se fu ll-b rid g e FREDFET N channel E nhancem ent m ode Package with insulated m etal base plate C ircuit diagram : Fig . 3 a ’ )


    OCR Scan     		PDF 7076-A 500-A