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    49C51 Search Results

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    49C51 Price and Stock

    Nexperia BZV49-C51,115

    DIODE ZENER 51V 1W SOT89
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    DigiKey BZV49-C51,115 Reel 1,000
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    BZV49-C51,115 Cut Tape 1
    • 1 $0.61
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    BZV49-C51,115 Digi-Reel 1
    • 1 $0.61
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    Mouser Electronics BZV49-C51,115 960
    • 1 $0.61
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    Rochester Electronics BZV49-C51,115 5,719 1
    • 1 $0.1724
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    TTI BZV49-C51,115 Reel 4,000
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    TME BZV49-C51,115 1
    • 1 $0.815
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    Avnet Silica BZV49-C51,115 2,000 8 Weeks 1,000
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    EBV Elektronik BZV49-C51,115 8 Weeks 1,000
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    Rochester Electronics LLC BZV49-C51,115

    NEXPERIA BZV49-C51 - ZENER DIODE
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    DigiKey BZV49-C51,115 Bulk 1,674
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    Nexperia BZV49-C51115

    Diode Zener Single Dual Anode 51V 5% 1W 4-Pin(3+Tab) SOT-89 T/R - Tape and Reel (Alt: BZV49-C51,115)
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    Avnet Americas BZV49-C51115 Reel 6 Weeks 4,000
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    Samsung Semiconductor KM49C512BJ-6T

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics KM49C512BJ-6T 9,800 3
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    • 10 $1.755
    • 100 $1.0969
    • 1000 $0.6142
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    Samsung Semiconductor KM49C512BLJ-7TQ1

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    Bristol Electronics KM49C512BLJ-7TQ1 4,947
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    49C51 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM49C512

    Abstract: No abstract text available
    Text: PRELIMINARY 49C512 CMOS DRAM 5 1 2 K X 9 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 49C512 is a CMOS 5 2 4 ,2 8 8 bit X 9 Dynamic Random Access design is optimized for high performance such as personal computer, graphics and


    OCR Scan     		PDF KM49C512 49C512- 130ns 150ns 180ns 49C512 28-LEAD KM49C512

    49C512

    Abstract: 49C51
    Text: PRELIMINARY CMOS DRAM 49C512 5 1 2 K X 9 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM 49C512 is a CMOS high speed 5 2 4 ,2 8 8 bit X 9 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM49C512 49C512 49C5ws) KM49C512J 49C51

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM 49C512/L/SL 5 1 2 K x 9 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung 49C512/L/SL is a CMOS high speed 524,288 b i t x 9 D ynam ic Random A ccess Memory. Its design is op tim ized fo r high pe rform ance ap p lica tio n s


    OCR Scan     		PDF KM49C512/L/SL KM49C512/L/SL KM49C512/L/SL-7 KM49C512/L/SL-8 KM49C512/L/SL-10 130ns 150ns 100ns 180ns KM49C512/USL

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS DRAM 49C512 5 1 2 K X 9 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 9 C 5 1 2 is a CMOS 5 2 4 ,2 8 8 bit X 9 Dynamic Random A ccess design is optim ized for high perform ance


    OCR Scan     		PDF KM49C512 130ns 180ns 28-LEAD

    KM41C4000AJ

    Abstract: KM44C1000AZ "30 pin simm" KM41C4000Z KMM584000A KM41C4001AZ 1Mx4 SOJ 1Mx4 nibble 4Mx1 nibble
    Text: FUNCTION GUIDE 2. Product Guide 2.1 Dynamic RAM Generation 1st Gen. 2nd Gen. 3rd Gen. Part Number Organization Speed ns Technology Feature Package Remark KM41C4000J KM41C4000Z KM 41C4000U KM41C4000LZ KM41C4001J KM41C40012 KM41C4002J KM41C40022 4M x1 4M x1


    OCR Scan     		PDF KM41C4000J KM41C4000Z 41C4000U KM41C4000LZ KM41C4001J KM41C40012 KM41C4002J KM41C40022 KM44C1OOOJ KM44C1000Z KM41C4000AJ KM44C1000AZ "30 pin simm" KMM584000A KM41C4001AZ 1Mx4 SOJ 1Mx4 nibble 4Mx1 nibble

    Untitled

    Abstract: No abstract text available
    Text: 49C512LL CMOS DRAM 51 2K x9 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung 49C512LL is a C M OS high speed 524,288 b i t x 9 D ynam ic Random A cce ss Mem ory. Its de sig n is op tim ize d fo r h ig h pe rform ance a p p lica tio n s


    OCR Scan     		PDF KM49C512LL KM49C512LL-7 KM49C512LL-8 KM49C512LL-10 100ns 130ns 150ns 180ns KM49C512LL

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100

    PE 8001A

    Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1


    OCR Scan     		PDF KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P PE 8001A 23C1001 23C1010 KM68512 km41c256 TFK 805 TFK 001

    41C464

    Abstract: 41C258 41C1000 44C256C
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3. 4. Product G u id e.


    OCR Scan     		PDF KM41C256 KM424C256 424C256A. KM424C257 KM428C128 428C256. 41C464 41C258 41C1000 44C256C