4MX40 Search Results

A60e

Abstract: AA010
Contextual Info: DRAM MODULE 16 Mega Byte KMM54041OOAK/AKG Fast Page Mode 4Mx40 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM5404100AK is a 4M bit X 40 Dynamic RAM high density memory module The

Contextual Info: DRAM MODULE 16 Mega Byte KMM5404000A/AG Fast Page Mode 4Mx40 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES • Performance Range: The Sam sung KM M 5404000A is a 4M bit x 40 tRAC 50ns 60ns 70ns 80ns Dynam ic RAM high density m em ory m odule The

Contextual Info: DRAM MODULE 16 Mega Byte KMM5404000AK/AKG Fast Page Mode 4Mx40 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5404000AK is a 4M bit x 40 Dynamic RAM high density memory module. The Samsung KMM5404000AK consists of ten CMOS

4Mx40

Abstract: 404006EQS4G04TF
Contextual Info: 4M x 40 Bit 3.3V EDO DIMM Extended Data Out EDO DRAM DIMM 404006EQS4G04TF 100 Pin 4Mx40 EDO DIMM Unbuffered, 4k Refresh, 3.3V Pin Assignment Pin# Pin# 1 Vcc 51 2 DQ0 52 3 DQ1 53 4 DQ2 54 5 DQ3 55 6 Vcc 56 7 DQ4 57 8 DQ5 58 9 DQ6 59 10 DQ7 60 11 CAS0* 61

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7^4142 b 74 0014^11 DRAM MODULES KMM5404100/G 4MX40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: KMM5404100-6 • • • • • • • Irac tcAC tue 60ns 15ns 110ns KM M5404100-7 70ns 20ns

Contextual Info: DRAM MODULE 16 Mega Byte KMM5404000AK/AKG Fast Page Mode P r o lim in a r w 4M y4.d DRAM d r a m SIMM S IM M , ¿ K Refresh R o frp sh , R v 4Mx40 4K 5V p r e lim in a r y Using 16M DRAM with 300 mil Package G EN ERA L D ES C R IPTIO N FEATURES The Samsung KMM5404000AK is a 4M bit x 40

Contextual Info: MITSUBISHI LS Is {DRAM MODULE FAST PAGE MODE DYNAMIC RAM 4MX40 Max. Access time ns) Type name MH4M40CJ-5 ★ 50 MH4M40CJ-6 ★ 60 MH4M40CJ-7 ★ 70 MH4M40CNJ-5 ★ 50 MH4M40CNJ-6 • k 60 MH4M40CNJ-7 ★ 70 I O U M: 160 Load memory M5M417400CJ x 10 COMMON DATA

Contextual Info: DRAM MODULE 16 Mega Byte KMM5404000A/AG Fast Page Mode 4Mx40 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5404000A is a 4M bit x 40 Dynamic RAM high density memory module. The Samsung KMM5404000A consists of ten CMOS

Contextual Info: DRAM MODULE 7_ 16 Mega Byte KMM54041OOA/AG Fast Page Mode 4Mx40 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM5404100A is a 4M bit x 40 Dynamic RAM high density memory module. The

Contextual Info: DRAM MODULE 16 Mega Byte KMM54041OOA/AG Fast Page Mode 4Mx40 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES • Performance Range: The Sam sung KM M 5404100A is a 4M bit x 40 1RAC 50ns 60ns 70ns 80ns D ynam ic RAM high density m em ory m odule The

HB56D836SBT-AC

Abstract: power bank 5v 4Mx1 514400C m514400c 473e HM514400BS BLS B56A HM5116400ATS 5117800B
Contextual Info: 72-pin DRAM SIPs *32 »36 Org. Part Number Speeds ns Voltage Refresh Cycle Refresh Period Refresh Modes Power Version Number of Banks Component Base 1Mx32 HB56 A132BV/BU-B/BL HB56A132SBV-B/BL HB56A132BV/BU-C/CL HB56A132SBV-C/CL 60, 70, 80 5V 1K 16 ms 128 ms

23C1001

Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5

1Mx9 DRAM 30-pin SIMM

Abstract: KMM594000C 30 pin simm 8mx32 simm 72 pin 4Mx9 DRAM 30-pin SIMM 4MX39 1mx33 4m dram 72-pin simm 32 DRAM 30-pin SIMM
Contextual Info: 2. Product Guide Org. Part No. Feature Speed ns Package PCB Height Refresh cycle/ms C/S 650 1024/16 NOW DRAM SIMM Based on 4M DRAM 1Mx8 KMM581000CN 1Mx9 4Mx8 4Mx9 F/P 60/70/80 S, 30 Pin SIMM KMM591000CN F/P 60/70/80 S, 30 Pin SIMM 650 1024/16 NOW KMM584000C

4Mx4 dram simm

Abstract: TTP32 SIMM72 dram card 60 pin 8KX8 TTP42 4MX16* dram fpm 4Mx8 dram simm 32MByte 334k
Contextual Info: Memory Overview Package Type -Pin Count Supply Voltage Flash_Card ATA-68 3.3; 5.0 ATA flash card, ISA Bus I/F NVM Flash_Card CF-50 3.3; 5.0 Compact flash card 15MByte NVM Flash_Card ATA-68 3.3; 5.0 ATA flash card, ISA Bus I/F HB286015C3 15MByte NVM Flash_Card

SM580

Abstract: SM5800
Contextual Info: SMART SM5800840UUEUGU Modular Technologies March 26, 1997 64MByte 8M x 80 DRAM Module - 4Mx4 based 168-pin DIMM, Buffered, ECC Features Part Numbers • • • • • • • • • • • SM58008400UEUGU SM58008401UEUGU SM58008408UEUGU SM58008409UEUGU

DQ72

Contextual Info: SMART SM5800440UUEUGU Modular Technologies March 13, 1997 32MByte 4M x 80 DRAM Module - 4Mx4 based 168-pin DIMM, Buffered, ECC Features Part Numbers • • • • • • • • • • • SM58004400UEUGU SM58004401UEUGU SM58004408UEUGU SM58004409UEUGU

MCM91430

Abstract: Motorola CMOS Dynamic RAM 1M Motorola CMOS Dynamic RAM 1M x 1 1mx1 DRAM DIP MCM511000A mcm511000 1K x4 static ram application note Motorola CMOS Dynamic RAM 16m x 32 TSOP 400 86 MCM69F536B
Contextual Info: Memory Products In Brief . . . Motorola’s memory product portfolio has been expanded to support a broad range of engineering applications. Included in this portfolio are asynchronous devices with access times of 6 ns at 256K–bit density, 6 ns at 5 V 1

xc68040

Abstract: xc68307 MC88110 mpc 1488 mc68185 Motorola M 9587 xc68lc040 XPC106 MC88100 XPC105
Contextual Info: BR1100/D REV 22 Microprocessor and Memory Technologies Group Reliability and Quality Report Third Quarter 1996 MICROPROCESSOR AND MEMORY TECHNOLOGIES GROUP RELIABILITY AND QUALITY REPORT QUARTER 3, 1996  MOTOROLA INC., 1996 To Our Valued Customers: Thank You! Thank you for selecting Motorola as your supplier of Microprocessor and Memory Products.

M5916

Abstract: 533410 M5402 KMM591000CN-7 KMM5334100
Contextual Info: 1. INTRODUCTION Dynamic RAM Module 14M Based } ; - ilM x 8 "11Mx9 1KMM581000CÑ-6 HKMM58100ÒCN-7 IKMM581000CN-8 j • KMM591000CN-6 : ¡]KMM591000CN-7~ ~~~ffKMM591000CN-8 [4Mx8 J - ]4Mx9 .KMM584Q0ÒC-5 jjKM M584Q00C-6 ] KMM584000C-7 _ |K M M 584000C-8 - 1KMM594000C-5

KMM5334100

Abstract: LM 8227 KMM591000CN-6 LM 8251 m53641 KMM5368103A y 4m 1/Detector/"Detector IC"/"CD"/4Mx8 dram simm
Contextual Info: TABLE OF CONTENTS I .F UNC TI ON GUIDE 1. 2. Product G uide. 13

2MX32

Contextual Info: Contents Quick Module Reference. 5 72-Pin DRAM S IP Data Sheets 11 lM x32 HB56A132 Series. HB56A132B W/SB W Series. HB56A232 Series. HB56A432 Series. HB56A832 Series. 13 21 28

HM62V8512LFP

Abstract: HM53861J M51419 16M dram dram zip 256kx16 m514280 hn27c1024hg 4M DRAM EDO M5241605 HM534253BT
Contextual Info: Memories Dynamic RAMs DRAM Access time ns 60 80 {HM5116100AS/ATS J F.P. 4k refresh -4Mx4 - {HM5116400AS/ATS ] F.P. 4k refresh 1HM51W16400AS/ATS ] F.P. 4k refresh 1HM5117400AS/ATS ] F.P. 2k refresh -3.3V operation- 16M- 70 -16Mx1 -3.3V operation— 2Mx8 -3.3V operation-

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7

SIMM 1Mx9 30pin

Abstract: simm EDO 72pin KMM51442100ATG KMM532
Contextual Info: I. DRAM MODULE Product Guide Org. Part No. Feature Access Time ns Package Height s.single/didouble (mil) Refresh (cycle/ms) CIS 1024/16 1024/120 1024/16 1024/120 1024/16 1024/16 1024/16 1024/16 now now now now now now now now 1024/16 1024/16 1024/16 1024/16