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    Untitled

    Abstract: No abstract text available
    Text: • « H Y U N D A I SEMICONDUCTOR H Y M 5 8 1 O O O B S e r ie s 1M X 8 - b it CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581000B is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22//F decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM581000B HY514400A 22//F HYM581000BM/BLM 1BB05-00-MAY93 4b750fifi 4b75Dflfl

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 V 4 4 0 3 B • • H Y U N D A I S e r ie s IM x 4-bit CMOS DRAM with4CAS PRELIMINARY DESCRIPTION The HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO controls DQO,


    OCR Scan     		PDF HY51V4403B 050f1 1AC1S-00-MAY94 HY51V4403BJ HY51V4403BU HYS1V4403BSU

    Untitled

    Abstract: No abstract text available
    Text: HY62256A-I Series »HYUNDAI 32K X 6-bit CMOS SRAM DESCRIPTION The HY62256A-I is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY62256A-I 1DC02-11-MA 4b75Gflà 1DC02-11-MAY94 4b750A 0003f

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM536400B Series SEMICONDUCTOR 4M X 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536400B is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of nine HY5116400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0 .2 2ftF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM536400B 36-bit HY5116400 HYM536400BM/BLM HYM536400BMG/BLMG 1CE05-00-MAY93

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM532100A Series SEMICONDUCTOR 1M x 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor Is mounted for each DRAM.


    OCR Scan     		PDF HYM532100A 32-bit HY514400A 22/iF HYM5321OOAM/ALM HYM532100AMG/ALMG 1CC03-00-M

    Untitled

    Abstract: No abstract text available
    Text: HY51V4403B Series “H Y U N D A I 1M x 4-bit CMOS DRAM with 4CÄS DESCRIPTION The HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576x4-bit. The HY51V4403B has four ¿ASs CAS0-3 w hich control corresponding data I/O port in conjunction with OE(eg.CASO controls DQO,


    OCR Scan     		PDF HY51V4403B 576x4-bit. HY51V4403B 1AC16-10-MAY95 HY51V4403BJ HY51V4403BLJ

    Untitled

    Abstract: No abstract text available
    Text: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs


    OCR Scan     		PDF 16Mbit HY57V164010- HY57V168010- HY57V161610- 1Mx16bit HY57V164010, HY57V168010, HY57V161610 512Kbit 1SD10-Q3-NOV96

    HY53C464LS

    Abstract: HY53C464F hy53c464 hy53c464lf HY53C464LF70 HY53C464S An-313
    Text: HY53C464 Seríes " H Y U N D A I 64K X 4-bit CMOS DRAM DESCRIPTION Hie HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.


    OCR Scan     		PDF HY53C464 330mil 18pin CMO442) 335ie P-021 A02-20-MA HY53C464LS HY53C464F hy53c464lf HY53C464LF70 HY53C464S An-313

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM536220 W-Series 2M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536220 is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of four HY5118160 in 42/42 pin SOJ and eight HY531000A in 20/26 pin SOJ on a 72 pin giass-epoxy printed circuit board. 0.22nF decoupling


    OCR Scan     		PDF HYM536220 36-bit HY5118160 HY531000A HYM536220W/LW HYM536220WG/LWG DQ0-DQ35) 4b750flfl

    HY62256A

    Abstract: hyundai HY62256AJ55
    Text: HY62256A Series • H Y U N D A I 32Kx 8-bit CMOS SRAM DESCRIPTION The HY62256A is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY62256A 55/70/85/100ns HY6264A-I HY62256AP HY62256ALP HY62256ALLP HY62256AJ hyundai HY62256AJ55

    Untitled

    Abstract: No abstract text available
    Text: • • H Y U N D A I H Y M 5 9 4 0 0 0 B M -S e r ie s 4M * 9-bit CMOS DRAM MODULE DESCRIPTION The HYM594000B is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of two HY5117400 in 24/28 pin SOJ and one HY514100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22jiF decoupling


    OCR Scan     		PDF HYM594000B HY5117400 HY514100A 22jiF HYM594000BM/BLM 1BC06-11-MAR94 50fifi

    Untitled

    Abstract: No abstract text available
    Text: HY234000 Series -H Y U N D A I 512K X 8-bit CMOS MASK ROM PRELIMINARY DESCRIPTION The HY234000 is a 4Mbit mask-programmable ROM organized as 524,288 x8bit. It is fabricated using HYUNDAI’S advanced CMOS process technology. The HY234000 operates with a 5V power supply and all inputs are i n ­


    OCR Scan     		PDF HY234000 120ns 525mil HY234000P-XXX HY234000G-XXX

    Untitled

    Abstract: No abstract text available
    Text: HY5216256 Series -HYUNDAI 256Kx 16-bit Video RAM with 2CAS Introduction Overview The 4megabit Video RAM is an application specific memory device designed for graphics applications. It comprises a 256k x16 DRAM memory array interfaced to a 256 x16 Serial Access Memory SAM , or register.


    OCR Scan     		PDF HY5216256 256Kx 16-bit 16bits 4b750Ã 1VC01-00-MAY95 525mil 64pin 4b750flÃ

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI H Y 5 3 10 0 0 A SEMICONDUCTOR 1M X S e rie s 1-bit CMOS DRAM DESCRIPTION The HY531000A is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY531000A 300mil 1AB05-10-APR93 HY531000AS HY531000ALS HY531000AJ HY531000AU

    Untitled

    Abstract: No abstract text available
    Text: m V Y m I I I I 11 A I H Y 5 7 V 1 6 1 6 1 I V H U ft I S e r ie s 1M X 16 bit Synchronous DRAM PRELIMINARY DESCRIPTION The HY57V16161 is a very high speed 3.3 Volt synchronous dynamic RAM organized 1,048,476x16 bits, and fabricated with the Hyundai CMOS process. This dual bank circuit consists of two memories, each 524,288 words


    OCR Scan     		PDF HY57V16161 476x16 4b75Gflfi 1SD03-00-MAY95 400mil 4b750flÃ

    Untitled

    Abstract: No abstract text available
    Text: ♦HYUNDAI H Y 5 1 4 1 0 0 S e rie s 4M X 1-bit CMOS DRAM SEMICONDUCTOR DESCRIPTION The HY514100 is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY514100 DDD14Ã 3380i8 1AC01-20-APR93 4L750flfl HY514100J

    Untitled

    Abstract: No abstract text available
    Text: Y I I I I VI A I I U 11 U l l l HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 70 ns access time • Compatible with JEDEC-Standard Commands


    OCR Scan     		PDF HY29F200T/B HY29F200 16-Bit) G-70I, T-70I R-701 G-70E, T-70E, R-70E G-90I

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HY514400 Series SEMICONDUCTOR 1Mx 4-bit CMOS DRAM DESCRIPTION The HY514400 is the new generation and fast dynamic RAM organized 1,048,576 x 4 bits. The HY514400 utilizes Hyundai’s C M O S silicon gate process technology a s well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY514400 ai050 1AC02-30-APR93 HY514400J 00014M0

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR H Y 5 1 1 6 1 0 0 S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100 is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5116100 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5116100 fam35) 1AD01 -10-APR93 HY5116100JC HY5116100UC HY5116100TC

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 4 4 0 0 B " H Y U N D A I S e r ie s 1M x 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY514400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY514400B 1AC11-00-MAY94 4b75Gflfl HY514400BJ HY514400BU HY514400BSU HY514400BT

    Untitled

    Abstract: No abstract text available
    Text: •H Y U N D A I HYM564414A K-Series Unbuffered 4M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION H ie HYM564414A is a 4M x 64-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404A in 24/26 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 nF


    OCR Scan     		PDF HYM564414A 64-bit HY5117404A HYM564414AKG/ATKG/ASLKG/ASL7KG A0-A10) DQ0-DQ63) 1CE1S-10-APR96

    Untitled

    Abstract: No abstract text available
    Text: HY6718110/111 HYUNDAI 64K X 18 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64K x18 SRAM core, address registers, data input registers, a 2-bit burst address counter and Non-pipelined output. All synchronous inputs pass through registers controlled by a


    OCR Scan     		PDF HY6718110/111 486/Pentium 15ns/20ns/25ns 50MHz 486/Pentium 4b75066 1DH03-11-MAY95 HY6718110/111 4b75DÃ

    Untitled

    Abstract: No abstract text available
    Text: "HYUNDAI HY51V17404A Series 4M X 4-bit CMOS DRAM With Extended Data Out DESCRIPTION The H Y51V17404Ais the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17404A utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V17404A Y51V17404Ais HY51V17404A 1AD40-00-MAY95 HY51V17404AJ HY51V17404ASLJ HY51V17404AT HY51V17404ASLT

    HYM591000

    Abstract: No abstract text available
    Text: HYUNDAI H Y M 5 9 1 0 0 0 A SEMICONDUCTOR S e r ie s 1M x 9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000A is a 1M x 9-bit Fast page mode CM O S DRAM module consisting of two HY514400 and one HY531000 in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted


    OCR Scan     		PDF HYM591000A HY514400 HY531000 HYM591000AM 0177G 1BB04-20-M 0QG1771 HYM591000