HYM76V4M655HGLT6-8
Abstract: HYM76V4M655HGLT6-P HYM76V4M655HGLT6-S HYM76V4M655HGT6-P HYM76V4M655HGT6-S
Text: 4M x64 bits P C 1 0 0 S D R A M S O D IM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4M655HG L T6 Series D E S C R IP T IO N The Hynix HYM76V4M655HG(L)T6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin
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PC100
4Mx16
HYM76V4M655HG
4Mx64bits
4Mx16bits
400mil
54pin
168pin
HYM76V4M655HGLT6-8
HYM76V4M655HGLT6-P
HYM76V4M655HGLT6-S
HYM76V4M655HGT6-P
HYM76V4M655HGT6-S
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BA5 marking
Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
Text: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package
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HMD4M144D9WG
64Mbyte
4Mx144)
200-pin
HMD4M144D9WG
144bit
4Mx16bit
50-pin
16bit
BA5 marking
DQ112-127
BA7 marking
DQ113
BA6 marking
BA6137
DQ99
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM372F404CS KMM372F404CS EDO Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F404C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F404C consists of four 4Mx16bits & two 4Mx4bits CMOS DRAMs in
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KMM372F404CS
KMM372F404CS
4Mx16
KMM372F404C
4Mx72bits
4Mx16bits
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: KMM372V804CS DRAM MODULE KMM372V804CS Fast Page Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V804C is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372V804C consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in
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KMM372V804CS
KMM372V804CS
4Mx16
KMM372V804C
8Mx72bits
4Mx16bits
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM374F804CS1 KMM374F804CS1 Fast EDO Mode without buffer 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F804CS1 is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F804CS1 consists of eight CMOS 4Mx16bits
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KMM374F804CS1
KMM374F804CS1
4Mx16
8Mx72bits
4Mx16bits
400mil
300mil
168-pin
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Untitled
Abstract: No abstract text available
Text: 8Mx64 bits PC133 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V8M635HG L T6 Series Preliminary DESCRIPTION The Hyundai HYM76V8M635AT6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of eight 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy
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8Mx64
PC133
4Mx16
HYM76V8M635HG
HYM76V8M635AT6
8Mx64bits
4Mx16bits
400mil
54pin
168pin
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Untitled
Abstract: No abstract text available
Text: 4Mx64 bits PC133 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4M635HG L T6 Series Preliminary DESCRIPTION The Hyundai HYM76V4M635HGT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin
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4Mx64
PC133
4Mx16
HYM76V4M635HG
HYM76V4M635HGT6
4Mx64bits
4Mx16bits
400mil
54pin
168pin
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KMM372F804BS
Abstract: No abstract text available
Text: KMM372F804BS DRAM MODULE KMM372F804BS EDO Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F804B consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in
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KMM372F804BS
KMM372F804BS
4Mx16
KMM372F804B
8Mx72bits
KMM372F804B
4Mx16bits
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: KMM372V804BS DRAM MODULE KMM372V804BS Fast Page Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372V804B consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in
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KMM372V804BS
KMM372V804BS
4Mx16
KMM372V804B
8Mx72bits
KMM372V804B
4Mx16bits
400mil
168-pin
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KMM372F404BS
Abstract: No abstract text available
Text: KMM372F404BS DRAM MODULE KMM372F404BS EDO Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F404B is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F404B consists of four 4Mx16bits & two 4Mx4bits CMOS DRAMs in
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KMM372F404BS
KMM372F404BS
4Mx16
KMM372F404B
4Mx72bits
KMM372F404B
4Mx16bits
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: M372V0405DT0-C DRAM MODULE M372V0405DT0-C Fast Page Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4 , 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M372V0405DT0-C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung M372V0405DT0-C consists of four 4Mx16bits & two 4Mx4bits
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M372V0405DT0-C
M372V0405DT0-C
4Mx16
4Mx72bits
4Mx16bits
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM366F40 8 4CS1 KMM366F40(8)4CS1 EDO Mode without buffer 4M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40(8)4CS1 is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F40(8)4CS1 consists of four CMOS 4Mx16bits
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KMM366F40
4Mx16,
4Mx64bits
4Mx16bits
400mil
168-pin
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K4E641612D-T
Abstract: No abstract text available
Text: DRAM MODULE M374F0405DT1-C M374F0405DT1-C EDO Mode without buffer 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M374F0405DT1-C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung M374F0405DT1-C consists of four CMOS 4Mx16bits DRAMs
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M374F0405DT1-C
M374F0405DT1-C
4Mx16
4Mx72bits
4Mx16bits
300mil
168-pin
K4E641612D-T
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KMM5328000BSW
Abstract: No abstract text available
Text: DRAM MODULE KMM5328000BSW/BSWG KMM5328000BSW/BSWG Fast Page Mode 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5328000B is a 8Mx32bits Dynamic RAM high density memory module. The Samsung KMM5328000B consists of four CMOS 4Mx16bits DRAMs in TSOP packages
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KMM5328000BSW/BSWG
KMM5328000BSW/BSWG
4Mx16,
KMM5328000B
8Mx32bits
KMM5328000B
4Mx16bits
72-pin
KMM5328000BSW
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KMM5364005BSW
Abstract: KMM5364005BSWG
Text: DRAM MODULE KMM5364005BSW/BSWG KMM5364005BSW/BSWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364005B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364005B consists of two CMOS 4Mx16bits and one CMOS Quad CAS
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KMM5364005BSW/BSWG
KMM5364005BSW/BSWG
4Mx16
KMM5364005B
4Mx36bits
KMM5364005B
4Mx16bits
72-pin
KMM5364005BSW
KMM5364005BSWG
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Untitled
Abstract: No abstract text available
Text: KMM372C804BS DRAM MODULE KMM372C804BS Fast Page Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372C804B consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in
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KMM372C804BS
KMM372C804BS
4Mx16
KMM372C804B
8Mx72bits
KMM372C804B
4Mx16bits
400mil
168-pin
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68PIN
Abstract: max4860
Text: HANBit HMF4M16J4V Flash-ROM Module 8MByte 4Mx16bit , 68-pin JLCC type, 3.3V Design Part No. HMF4M16J4V GENERAL DESCRIPTION The HMF4M16J4V is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in an x16bit configuration. The module consists of four 2M x 8bit FROM mounted on a 68-pin, JLCC connector FR4-printed circuit
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HMF4M16J4V
4Mx16bit)
68-pin
HMF4M16J4V
x16bit
68-pin,
HMF4M16J4V-70
68PIN
max4860
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HYM7V65401B
Abstract: No abstract text available
Text: 4Mx64 bits PC100 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V65401B Q-Series DESCRIPTION The Hynix HYM7V65401B Q-Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package and 2Kbit EEPROM in 8pin TSSOP package
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4Mx64
PC100
4Mx16
HYM7V65401B
4Mx64bits
4Mx16bit
400mil
54pin
144pin
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HYM7V63401BTRG-75
Abstract: No abstract text available
Text: 4Mx64 bits PC133 SDRAM Unbuffered DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V63401B R-Series DESCRIPTION The Hynix HYM7V63401B R-Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package
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4Mx64
PC133
4Mx16
HYM7V63401B
4Mx64bits
4Mx16bit
400mil
54pin
168pin
HYM7V63401BTRG-75
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Untitled
Abstract: No abstract text available
Text: 4Mx64 bits PC133 SDRAM Unbuffered DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4635HGT6 Series DESCRIPTION The Hynix HYM76V4635AT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy
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4Mx64
PC133
4Mx16
HYM76V4635HGT6
HYM76V4635AT6
4Mx64bits
4Mx16bits
400mil
54pin
168pin
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KMM366F404BS1
Abstract: No abstract text available
Text: DRAM MODULE KMM366F40 8 4BS1 KMM366F40(8)4BS1 EDO Mode without buffer 4M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40(8)4BS1 is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F40(8)4BS1 consists of four CMOS 4Mx16bits
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KMM366F40
4Mx16,
4Mx64bits
4Mx16bits
400mil
168-pin
KMM366F404BS1
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KMM5328004BSW
Abstract: KMM5328004BSWG
Text: DRAM MODULE KMM5328004BSW/BSWG KMM5328004BSW/BSWG EDO Mode 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5328004B is a 8Mx32bits Dynamic RAM high density memory module. The Samsung KMM5328004B consists of four CMOS 4Mx16bits DRAMs in TSOP packages
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KMM5328004BSW/BSWG
KMM5328004BSW/BSWG
4Mx16,
KMM5328004B
8Mx32bits
KMM5328004B
4Mx16bits
72-pin
KMM5328004BSW
KMM5328004BSWG
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Untitled
Abstract: No abstract text available
Text: HYM76V4M655HG L T6 4Mx64, 4M x 16 based, PC100 DESCRIPTION The Hynix HYM76V4M655HG(L)T6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in Spin TSSOP package on a 168pin
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HYM76V4M655HG
4Mx64,
PC100
HYM76V4M655HG
4Mx64bits
4Mx16bits
400mil
54pin
168pin
HYW6V4M655HG
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM5368005ASW/ASWG KMM5368005ASW/ASWGEDO Mode 8M X 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5368005A is a 8Mx36bits Dynamic RAM high density memory module. The Samsung KMM5368005A consists of four CMOS 4Mx16bits and two CMOS Quad CAS
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OCR Scan
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KMM5368005ASW/ASWGEDO
KMM5368005ASW/ASWG
4Mx16
KMM5368005ASW
cycles/64ms
KMM5368005ASWG
1000mil)
KMM5368005A
8Mx36bits
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