GRM39COG221J050AD
Abstract: A17014 MMA707 MMA707-3030 ATC600S1R8AT250 A55085 Rogers RO4003 grm39 RO40 GRM39COG221J050A
Text: MMA707 1 Watt InGaP HBT Amplifier FEATURES MMA707 • High Output Power: +31 dBm Typ -3030 • High 3rd Order IP: +50 dBm (Typ) • High Dynamic Range: 97 dB (Typ) 3mm x 3mm square • 3mm square QFN plastic package DESCRIPTION The MMA707-3030 is a Power InGaP HBT device that is designed to provide moderate power
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MMA707
MMA707-3030
A17014
GRM39COG221J050AD
A17014
MMA707
ATC600S1R8AT250
A55085
Rogers RO4003
grm39
RO40
GRM39COG221J050A
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Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications
Abstract: CGH55030 CGH55030-TB Tower Mounted Amplifiers GaN Bias 25 watt cgh55015 CGH55015-TB RO4350 rogers MICROWAVE TRANSISTOR
Text: Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications Bradley J. Millon1, Simon M. Wood, Raymond S. Pengelly Cree Inc. 3026 E Cornwallis Rd Research Triangle Park, NC 27709, USA 1 brad_millon@cree.com Abstract — 2.5 and 5 Watt average power 15 and 30 Watt peak
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5030-TB
Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications
CGH55030
CGH55030-TB
Tower Mounted Amplifiers
GaN Bias 25 watt
cgh55015
CGH55015-TB
RO4350
rogers
MICROWAVE TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: 1997 MTT Presentation Stabilizing Mosfet Amplifiers Polyfet Rf Devices S. K. Leong Stabilizing Mosfet Amplifiers • • • • • • • Series Gate Resistance Shunt Gate Resistance Drain Gate Feedback Drain Shunt Resistance Ferrite Loading Gate Circuit
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AVANTEK solid state
Abstract: AVANTEK awp AWP-64200RM MS3102A-14S-6P Avantek amp Avantek amplifier Avantek amplifier 140 AWP-64200 1-800-AVANTEK Avantek
Text: O aw n tek Satellite Communications: Uplink Power Amplifiers Features ACU-64100 RM • High Linearity • High Gain • Low/No Maintenance • Long Life • Fail Soft • C Band Description Avantek's C Band satellite uplink power amplifiers are designed to provide exceptionally high linearity. They may be
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ACU-64100
AWP-64200
1-800-AVANTEK
ACU-64100RM,
AWP-64200RM
CMR-137
CPR-137
MS3102A14S-6P
AVANTEK solid state
AVANTEK awp
MS3102A-14S-6P
Avantek amp
Avantek amplifier
Avantek amplifier 140
AWP-64200
1-800-AVANTEK
Avantek
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MOBILE jammer GSM 1800 MHZ circuit diagram
Abstract: MOBILE jammer GSM 1800 MHZ mobile jammer circuit design gsm gsm mobile jammer jammer gsm mobile jammer circuit long range jammer gsm block diagram of wireless watt meter mobile phone jammer jammer circuit for mobile communication diagram
Text: Global Position System Low Noise Amplifier GPS, LNA, Sensitivity, Jamming, Cohabitation, TTFF This White Paper explains why an external low noise amplifier results in a better performance. Next generation mobile handsets will be equipped with GSM, WLAN, Bluetooth and GPS.
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662a-20
Abstract: MS2601A omega 650 HP 435B 435B 662a fluke 8050a plotter hp 7470A anritsu MS260
Text: LZY-2 ULTRA LINEAR RF AMPLIFIER 500 MHz - 1000 MHz 20 WATTS MIN., 1 dB COMPRESSION 40 dB MIN. GAIN TABLE OF CONTENTS 1.0 General Description 2.0 Electrical Performance Specifications 3.0 Mechanical Specifications 4.0 Electrical Featuress 4.1 Overdrive Protection
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dB/20
MAV-11
662a-20
MS2601A
omega 650
HP 435B
435B
662a
fluke 8050a
plotter hp
7470A
anritsu MS260
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FSX52WF
Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
Text: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of
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FLX202MH-12
FLK202MH-14
FSX52WF
fujitsu "application notes"
fsx51wf
NF037
FMC141401-02
FLL101
fll171
FMC1414P1-02
FLL55
FLL120MK
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2 Watt rf Amplifier
Abstract: HMC139 5 watt microwave amplifier 10 watt 16 ohm power amplifier "15 GHz" power amplifier 10 watt D000G4D
Text: ^□0 4 12 5 D00 0G4 D ÖSb IHTM HITTITE MICROWAVE CORPORATION GaAs MMIC 2.5 Watt Power Amplifier HMC139 JANUARY 1994 Features ON-CHIP MATCHING CIRCUITRY 30% POWER-ADDED EFFICIENCY 12dB GAIN FROM 4 TO 7 GHz 2.5 WATT OUTPUT POWER General Description The HMC139 is a GaAs MMIC amplifier
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D000G4D
HMC139
HMC139
2 Watt rf Amplifier
5 watt microwave amplifier
10 watt 16 ohm power amplifier
"15 GHz" power amplifier 10 watt
D000G4D
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lm4136
Abstract: LM 358 lm 324 759 Power Operational Amplifiers OPERATIONAL AMPLIFIER LM 741 2 channel 40 watt audio amplifier 12l8 LM 1709 Operational Amplifiers operational amplifier LM 324 comparator
Text: Section 1 Operational Amplifiers s Section 1 Contents Operational Amplifiers Definition of T e rm s . Operational Amplifiers Selection G uid e.
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LF147/LF347
155/L
F156/L
LF351
LF353
TL081
TL082
lm4136
LM 358 lm 324
759 Power Operational Amplifiers
OPERATIONAL AMPLIFIER LM 741
2 channel 40 watt audio amplifier
12l8
LM 1709
Operational Amplifiers
operational amplifier
LM 324 comparator
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Untitled
Abstract: No abstract text available
Text: 'ìD D m e S G00D04D ÔSb •HTM HITTITE MICROWAVE CORPORATION GaAs MMIC 2.5 Watt Power Amplifier HMC139 JANUARY 1994 Features ON-CHIP MATCHING CIRCUITRY 30% POWER-ADDED EFFICIENCY 12dB GAIN FROM 4 TO 7 GHz 2.5 WATT OUTPUT POWER General Description The HMC139 is a GaAs MMIC amplifier
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G00D04D
HMC139
HMC139
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Untitled
Abstract: No abstract text available
Text: Model SM2040-37 2000-4000 MHz 5 Watt Linear Power Amplifier FOR ISM, WCS, & WLL APPLICATIONS The SM2040-37 is a small, highly linear amplifier designed for multipurpose use in military and wireless applications. Operating from 2 to 4 GHz, the amplifier is
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SM2040-37
SM2040-37
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Untitled
Abstract: No abstract text available
Text: =1004125 0 0 0 0 0 3 0 ITfl • H T M HITTITE MICROWAVE CORPORATION GaAs MMIC 2.5 Watt Power Amplifier HMC138 JANUARY 1994 ! * - ■ ’ ii ■ IB js s Features ■ ON-CHIP MATCHING CIRCUITRY 30% POWER-ADDED EFFICIENCY 12dB GAIN FROM 2 TO 4GHz 2.5 WATT OUTPUT POWER
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HMC138
90NDPADS
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GSC371BAL2000
Abstract: Fujitsu GaAs FET application note GSC371-BAL2000 12v class d amplifier 40W FLL400IP-2 gaas fet vhf uhf GSC371 soshin RO3010 fujitsu rf power amplifier l band
Text: FUJITSU APPLICATION NOTE - No 002 1930MHz - 1990 MHz PCS BASE STATION APPLICATIONS 40 Watt Push-Pull Amplifier using the FLL400IP-2 GaAs FET FEATURES • Meets CDMA ACP at Pout>8W • Easy tuning for Power, IM3 or CDMA ACP • Over 40 W P1dB over entire PCS band
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1930MHz
FLL400IP-2
1930-1990MHz
720mA
96GHz
GSC371BAL2000
Fujitsu GaAs FET application note
GSC371-BAL2000
12v class d amplifier 40W
gaas fet vhf uhf
GSC371
soshin
RO3010
fujitsu rf power amplifier l band
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TURRET, 0.064
Abstract: westermo td-32 b SM2325-37HS
Text: Model SM3436-37HS 3400-3600 MHz 5 Watt Linear Power Amplifier FOR ISM, WCS, & BWA APPLICATIONS The SM3436-37HS is a solid state GaAs amplifier designed primarily for multiple wireless markets. With 200 MHz of bandwidth, the amplifier can be used in Industrial Scientific Medical ISM ,
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SM3436-37HS
SM3436-37HS
SM2325-37HS
TURRET, 0.064
westermo td-32 b
SM2325-37HS
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DC bias of gaas FET
Abstract: uly 2003 15 watt power amplifier " 15 GHz" 10041E MO-90
Text: HITTITE MICROWAVE CORPORATION GaAs MMIC 2.5 Watt Power Amplifier HMC138 FEBRUARY 1995 Features fi wmË ON-CHIP MATCHING CIRCUITRY * *• ttm m tm m t 30% POW ER-ADDED EFFICIENCY 12dB GAIN FROM 2 TO 4GHz 2.5 W ATT OUTPUT POWER General Description Typical Performance
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HMC138
HMC138
T004125
DC bias of gaas FET
uly 2003
15 watt power amplifier " 15 GHz"
10041E
MO-90
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1/C9000 - 60005
Abstract: B/C9000 - 60005 R/C9000 - 60005
Text: AN-60-005 APPLICATION NOTE LZY-2+ and LZY-2X+ ULTRA-LINEAR RF AMPLIFIER 500 MHz - 1000 MHz 20 WATTS MIN., 1 dB COMPRESSION 40 dB MIN. GAIN AN-60-005 Rev.: C M150261 (04/14/15) File: AN60005.doc This document and its contents are the properties of Mini-Circuits.
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AN-60-005
AN-60-005
M150261
AN60005
1/C9000 - 60005
B/C9000 - 60005
R/C9000 - 60005
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Untitled
Abstract: No abstract text available
Text: ir » \ SS HITTITE MICROWAVE CORPORATION GaAs MMIC 2.5 Watt Power A m p lifie r HMC139 FEBRUARY 1995 Features ON-CHIP MATCHING CIRCUITRY 30% POWER-ADDED EFFICIENCY 12dB GAIN FROM 4 TO 7 GHz 2.5 WATT OUTPUT POWER General Description Typical Performance The HMC139 is a GaAs MMIC amplifier
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HMC139
HMC139
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RAYTHEON
Abstract: Raytheon Company RMPA61810 2 watt rf transistor
Text: RMPA61810 Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description Features The Raytheon RMPA61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT process to maximize
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RMPA61810
RMPA61810
RAYTHEON
Raytheon Company
2 watt rf transistor
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55LT
Abstract: No abstract text available
Text: 1014 - 12 12 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE The 1014-12 is a COMMON BASE transistor capable of providing 12 Watts of Class C, RF output power over the band 1000-1400 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes
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200mA
55LT
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transistor amplifier 3 ghz 10 watts
Abstract: 10 watt power transistor
Text: 1720 - 5A 5 Watt - 28 Volts, Class C Microwave 1700 - 2000 MHz CASE OUTLINE 55LV, STYLE 1 GENERAL DESCRIPTION The 1720-5A is a COMMON BASE transistor capable of providing 5 Watts of Class C, RF output power over the band 1700-2000 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes
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720-5A
transistor amplifier 3 ghz 10 watts
10 watt power transistor
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Untitled
Abstract: No abstract text available
Text: 1720 - 2 2 Watt - 28 Volts, Class C Microwave 1700 - 2000 MHz GENERAL DESCRIPTION CASE OUTLINE The 1720-2 is a COMMON BASE transistor capable of providing 2 Watts of Class C, RF output power over the band 1700-2000 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes
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1417 transistor
Abstract: transistor 1417 microwave amplifier 2.4 ghz 10 watts c 1417 1417-12A 2.4 ghZ rf transistor amplifier TRANSISTOR 12 GHZ RF TRANSISTOR 1 WATT POWER TRANSISTOR 1 WATT 2.4 GHZ 1417 ic
Text: 1417 - 12A 12 Watt - 28 Volts, Class C Microwave 1400 - 1700 MHz GENERAL DESCRIPTION CASE OUTLINE The 1417-12A is a COMMON BASE transistor capable of providing 12 Watts of Class C, RF output power over the band 1400-1700 MHz. This transistor is designed for Microwave Broadband Class C amplifier
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417-12A
1417 transistor
transistor 1417
microwave amplifier 2.4 ghz 10 watts
c 1417
1417-12A
2.4 ghZ rf transistor
amplifier TRANSISTOR 12 GHZ
RF TRANSISTOR 1 WATT
POWER TRANSISTOR 1 WATT 2.4 GHZ
1417 ic
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transistor 60 watt
Abstract: No abstract text available
Text: 1719 - 20 20 Watt - 28 Volts, Class C Microwave 1700 - 1900 MHz GENERAL DESCRIPTION CASE OUTLINE The 1719-20 is a COMMON BASE transistor capable of providing 20 Watts of Class C, RF output power over the band 1700-1900 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes
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1718-32L
Abstract: No abstract text available
Text: 1718-32L 32 Watt - 24 Volts, Class C Microwave 1750 - 1850 MHz GENERAL DESCRIPTION CASE OUTLINE The 1718-32L is a COMMON BASE transistor capable of providing 32 Watts of Class C, RF output power over the band 1750-1850 MHz. This transistor is designed for Microwave Broadband Class C amplifier
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1718-32L
1718-32L
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