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Belden Inc C501N16010 PATCHCORD BCAT5E CMR LTBL 10FT
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DigiKey	C501N16010	Bulk			1	1 $8.37 10 $8.37 100 $8.37 1000 $8.37 10000 $8.37	Buy Now
Belden Inc C501N16004 PATCHCORD BCAT5E CMR LTBL 4FT
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DigiKey	C501N16004	Bulk			1	1 $6.62 10 $6.62 100 $6.62 1000 $6.62 10000 $6.62	Buy Now
Belden Inc C501N16002 PATCHCORD BCAT5E CMR LTBL 2FT
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DigiKey	C501N16002	Bulk			1	1 $6.03 10 $6.03 100 $6.03 1000 $6.03 10000 $6.03	Buy Now
Belden Inc C501N16007 PATCHCORD BCAT5E CMR LTBL 7FT
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DigiKey	C501N16007	Bulk			1	1 $7.5 10 $7.5 100 $7.5 1000 $7.5 10000 $7.5	Buy Now
IXYS Corporation DE275-501N16A Rf Mosfet, N Channel, 500V, De-275; Drain Source Voltage Vds:500V; Continuous Drain Current Id:16A; Power Dissipation:590W; Operating Frequency Min:-; Operating Frequency Max:100Mhz; No. Of Pins:6Pins; Operating Temperature Max:175°Crohs Compliant: Yes \|Ixys Rf DE275-501N16A
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Newark	DE275-501N16A	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now

501N16 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
501N16		Directed Energy	DE-SERIES FAST POWER MOSFET		Original	PDF

501N16 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: DE275X2-501N16A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.	Original	DE275X2-501N16A DE275X2-501N16A	PDF
DE275X2-501N16A Abstract: No abstract text available Text: Directed Energy, Inc. IXYS Company An ♦ ♦ ♦ ♦ ♦ DE275X2-501N16A RF Power MOSFET Preliminary Data Sheet Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in	Original	DE275X2-501N16A DE275X2-501N16A	PDF
DE275X2-501N16A Abstract: "RF MOSFETs" RF POWER MOSFET 275X2-501N16A DE275X2 Text: DE275X2-501N16A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.	Original	DE275X2-501N16A DE275X2-501N16A "RF MOSFETs" RF POWER MOSFET 275X2-501N16A DE275X2	PDF
DE275-102N06A Abstract: DE375-102N10A DE375-501N16A Text: RF Power MOSFETs VDSS ID25 RDS on max V 500 TC = 25 °C A 16 Ω 0.5 DE375-501N16A 1000 6 2.0 DE275-102N06A 10 1.2 DE375-102N10A Part Number Note: These part types are available from Directed Energy, Inc.	Original	DE375-501N16A DE275-102N06A DE375-102N10A DE275-102N06A DE375-102N10A DE375-501N16A	PDF
DE275-501N16A Abstract: 92-0002 DE275-501N16 Text: Directed Energy, Inc. An DE275-501N16A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	DE275-501N16A DE275-501N16A 92-0002 DE275-501N16	PDF
DE275-501N16A Abstract: 501N16A gsm Handset Circuit Diagram PIN diode SPICE model Text: DE275-501N16A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500	Original	DE275-501N16A DE275-501N16A 501N16A gsm Handset Circuit Diagram PIN diode SPICE model	PDF
DE275-501N16A Abstract: KP58 Text: DE275-501N16A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient	Original	DE275-501N16A DE275-501N16A KP58	PDF
501N16 Abstract: DE-275 Text: PRELIMINARY SPECIFICATIONS DE-275 501N16 16A, 500V, 0.5Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com	Original	DE-275 501N16 150oC 501N16	PDF
DE375-501N16A Abstract: No abstract text available Text: Directed Energy, Inc. An DE375-501N16A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500	Original	DE375-501N16A DE375-501N16A	PDF
high power rf 10kW Abstract: HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w DE-150 3RH1140-1AD00 101N30 102N02 Text: T H E P U L S E O F T H E F U T U R E DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 Series are the lowest power devices in the DE-Series family. However, their speed and frequency are the highest. The upper operational frequency of the DE-150 Series is approximately 110MHz. The switching speed of the device family is on the order	Original	DE-150 DE-150 110MHz. DE-375X2 102N20 501N40 high power rf 10kW HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w 3RH1140-1AD00 101N30 102N02	PDF
501N04 Abstract: DE-275 101N30 5kw power amplifier amplifier 1000W 8 DE-375 101N09 DE-275 Directed Energy 101N30 102N05 Text: e DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 SERIES are the lowest power devices in the D E-SERIES family. However their speed and frequency are the highest. The upper operational frequency of the DE-150 SERIES is approximately 110MHz. The switching speed of the device	OCR Scan	DE-150 110MHz. 501N04 30MHz. DE-375 102N10 501N21 DE-275 101N30 5kw power amplifier amplifier 1000W 8 101N09 DE-275 Directed Energy 101N30 102N05	PDF