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    50480 Search Results

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    50480 Price and Stock

    Renesas Electronics Corporation XLH735048.000000X

    XTAL OSC XO 48.0000MHZ HCMOS SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey XLH735048.000000X Reel 2,000 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.83426
    • 10000 $0.73528
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    XLH735048.000000X Cut Tape 879 1
    • 1 $1.27
    • 10 $1.216
    • 100 $1.0181
    • 1000 $0.9898
    • 10000 $0.9898
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    Avnet Americas XLH735048.000000X Reel 12 Weeks 1,000
    • 1 $2.36
    • 10 $2.36
    • 100 $2.36
    • 1000 $2.36
    • 10000 $2.36
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    Avnet Silica XLH735048.000000X 13 Weeks 1,000
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    Laird, A DuPont Business 67B3G2504807010R0B

    RFI FINGERSTOCK BECU GOLD SOLDER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 67B3G2504807010R0B Cut Tape 1,735 1
    • 1 $3.26
    • 10 $2.123
    • 100 $1.4938
    • 1000 $1.3318
    • 10000 $1.3318
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    67B3G2504807010R0B Digi-Reel 1,735 1
    • 1 $3.26
    • 10 $2.123
    • 100 $1.4938
    • 1000 $1.3318
    • 10000 $1.3318
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    67B3G2504807010R0B Reel 1,500 750
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.17125
    • 10000 $0.97289
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    QST Corporation QTM750-48.000MBE-T

    XTAL OSC XO 48.0000MHZ CMOS SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey QTM750-48.000MBE-T Digi-Reel 1,000 1
    • 1 $1.4
    • 10 $1.211
    • 100 $1.0443
    • 1000 $0.94252
    • 10000 $0.94252
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    QTM750-48.000MBE-T Cut Tape 1,000 1
    • 1 $1.4
    • 10 $1.211
    • 100 $1.0443
    • 1000 $0.94252
    • 10000 $0.94252
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    QTM750-48.000MBE-T Reel 1,000 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.81936
    • 10000 $0.72215
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    Microchip Technology Inc DSC1001CI5-048.0000

    MEMS OSC XO 48.0000MHZ CMOS SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DSC1001CI5-048.0000 440 1
    • 1 $2.81
    • 10 $2.668
    • 100 $2.81
    • 1000 $2.81
    • 10000 $2.81
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    Microchip Technology Inc DSC1001CI5-048.0000 5,833
    • 1 $2.81
    • 10 $2.81
    • 100 $2.13
    • 1000 $2.06
    • 10000 $2.03
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    NAC DSC1001CI5-048.0000 Tube 220
    • 1 $2.78
    • 10 $2.78
    • 100 $2.51
    • 1000 $2.26
    • 10000 $2.26
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    Avnet Silica DSC1001CI5-048.0000 8 Weeks 110
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    EBV Elektronik DSC1001CI5-048.0000 7 Weeks 110
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    Harwin M50-4801045

    CONN HEADER R/A 20POS 1.27MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey M50-4801045 Tube 284 1
    • 1 $4.23
    • 10 $4.23
    • 100 $2.57605
    • 1000 $2.09763
    • 10000 $1.70666
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    Avnet Abacus M50-4801045 13 Weeks 1,064
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    Find more 50480 price and stock on Findchips.com

    50480 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    5048001001 Molex Tapes, Adhesives, Materials - Tape - EMI SUPPRESSION TAPE 10MM Original PDF
    5048002001 Molex Tapes, Adhesives, Materials - Tape - EMI SUPPRESSION TAPE20MM Original PDF
    5048007000 Molex Tapes, Adhesives, Materials - Tape - EMI SUPPRESSION SHEET Original PDF
    5048007001 Molex Tapes, Adhesives, Materials - Tape - EMI SUPPRESSION SHT STND Original PDF
    5048007003 Molex Tapes, Adhesives, Materials - Tape - EMI SUPPRESSION SHTREFLOW Original PDF

    50480 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    50480

    Abstract: No abstract text available
    Text: DigitalTelecom Features Generic VDSL Line Isolation recommendations • • • • EE5 - SMD 1:1 turns ratio Operation bandwidth: 20kHz-10MHz 100 ohm line For VDSL and ADSL applications EP7 - TH LPRI @20°C Part Number 50480R 50270 Leakage L Dielectric mH Min


    Original     		PDF 20kHz-10MHz 50480R 50480

    Untitled

    Abstract: No abstract text available
    Text: DigitalTelecom Features Generic VDSL Line Isolation recommendations • • • • EE5 - SMD 1:1 turns ratio Operation bandwidth: 20kHz-10MHz 100 ohm line For VDSL and ADSL applications EP7 - TH LPRI @20°C Part Number 50480R 50270 Leakage L Dielectric mH Min


    Original     		PDF 20kHz-10MHz 50480R

    Acc 2089

    Abstract: ACC MICRO 2089 acc micro 2168 acc micro 2048 ACC MICRO 2086 ACC Microelectronics Corporation ACC Microelectronics ACC MICRO 2178 acc micro 2016 acc micro 2066
    Text: 2016 ACC MICRO 2016 BUFFER AND MUX LOGIC DATA BOOK MARCH 1997 Revision 2.0 ACC Microelectronics Corporation, 2500 Augustine Drive, Santa Clara, CA 95054 Phone: 408 980-0622 Fax: (408) 980-0626 TM ACC Micro 2016 ACC Microelectronics Corporation 2500 Augustine Drive,


    Original     		PDF

    High Power GaAs FET

    Abstract: Fujitsu GaAs FET application note C-111A EIAJ ED-4701 111A RM1101 fujitsu gaas fet ED-4701 FLC317MG-4 High voltage GaAs FET FLC31
    Text: FLC317MG-4 High Voltage - High Power GaAs FET FEATURES ・High Output Power: P1dB=34.8dBm Typ. ・High Gain: G1dB=9.5dB(Typ.) ・High PAE: ηadd=37%(Typ.) ・Proven Reliability ・Hermetic Metal/Ceramic Package DESCRIPTION The FLC317MG-4 is a power GaAs FET that is designed for


    Original     		PDF FLC317MG-4 FLC317MG-4 17Network High Power GaAs FET Fujitsu GaAs FET application note C-111A EIAJ ED-4701 111A RM1101 fujitsu gaas fet ED-4701 High voltage GaAs FET FLC31

    Untitled

    Abstract: No abstract text available
    Text: FMM5017VF GaAs MMIC FEATURES • • • • • • High Output Power: 29dBm typ. High Linear Gain: 20dB (typ.) Low In/Out VSWR Integrated Output Power Monitor Impedance Matched Zin/Zout = 50W Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5017VF is a MMIC amplifier designed for VSAT applications


    Original     		PDF FMM5017VF 29dBm FMM5017VF FCSI0598M200

    Untitled

    Abstract: No abstract text available
    Text: FLM1314-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 41.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 23% (Typ.) Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed


    Original     		PDF FLM1314-12F FLM1314-12F FCSI0500M200

    MULTIPLEXER IC

    Abstract: FMM381CG FMM381DG FCSI
    Text: 2.5Gb/s GaAs 4:1 Multiplexer IC FMM381CG/DG FEATURES CG • High speed operation up to 2.7 GHz from DC • Internal timing generator • ECL Compatible Input and output • Single -5.2V Power Supply • Stable operation at wide temperature range between 0 and 85°C


    Original     		PDF FMM381CG/DG 24-pin FMM381CG FMM381DG FCSI0199M200 MULTIPLEXER IC FCSI

    vectron crystal oscillator

    Abstract: 32.768 khz crystal 5ppm
    Text: VTD3 series Voltage Controlled Temperature Compensated Crystal Oscillator Features • CMOS Output • Output Frequencies to 61.440 MHz • Fundamental Crystal Design • Optional VCXO function available • Product is compliant to RoHS directive Applications


    Original     		PDF 1-88-VECTRON-1 15ppm 1-888-FAX-VECTRON D-74924, vectron crystal oscillator 32.768 khz crystal 5ppm

    FMM110VJ

    Abstract: No abstract text available
    Text: FMM110VJ GaAs MMIC FEATURES • Operation to 10 GHz • Input Frequency divide by 8, OUT and OUT • -5V or+5V DC Single Power Supply • External 50 ohm Load Driving Capability • Small 10 pin Hermetic SMT-10 Package (VJ) • Tape and Reel available DESCRIPTION


    Original     		PDF FMM110VJ SMT-10 FMM110VJ FCSI0598M200

    DFB wavelength locker

    Abstract: eudyna laser diode FLD5F20CE-E9535 FLD5F20CE-E9425 etalon wavelength locker 55nm E9425 e9530 Hauser+hrc+001 FLD5F20CE-E9195
    Text: 1,550nm MI DFB Laser with Integrated Wavelength Locker FLD5F20CE-E FEATURES • • • • • 10Gb/s Modulator Integrated DFB Laser Diode Module Wavelength: ITU-T grid W9180 1563.05nm thru W9600 (1529.55nm) 1600 ps/nm Dispersion Compact package with GPO connector


    Original     		PDF 550nm FLD5F20CE-E 10Gb/s W9180 W9600 10Gb/s. the4888 DFB wavelength locker eudyna laser diode FLD5F20CE-E9535 FLD5F20CE-E9425 etalon wavelength locker 55nm E9425 e9530 Hauser+hrc+001 FLD5F20CE-E9195

    EUDYNA

    Abstract: STM-16
    Text: FID3Z2KX/LX PIN Photodiode FEATURES KX • Data rates up to 2.5 Gb/s • High Quantum Efficiency: 0.8A/W at 1,310nm • Low dark current: 0.1nA • Photosensitive area: 50µm diameter • Wide spectral response range: 900nm to 1,600nm APPLICATIONS • Optical transmission system: STM-1 OC-3 ,


    Original     		PDF 310nm 900nm 600nm OC-12) STM-16 OC-48) 310nm 550nm EUDYNA STM-16

    Untitled

    Abstract: No abstract text available
    Text: FLM4450-45F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=46.5dBm Typ. ・High Gain: G1dB=10.0dB(Typ.) ・High PAE: ηadd=41%(Typ.) ・Broad Band: 4.4~5.0GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION


    Original     		PDF FLM4450-45F FLM4450-45F

    Untitled

    Abstract: No abstract text available
    Text: FLM1314-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 22% (Typ.) Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed


    Original     		PDF FLM1314-6F FLM1314-6F -65hods

    Untitled

    Abstract: No abstract text available
    Text: FLM4450-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 40% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM4450-25F -46dBc FLM4450-25F

    FLL21E004ME

    Abstract: No abstract text available
    Text: FLL21E004ME High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Power : P1dB=36dBm typ. at f=2.17GHz ・High Gain: G1dB=14dB(typ.) at f=2.17GHz ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION


    Original     		PDF FLL21E004ME 36dBm 17GHz 2200MHz FLL21E004ME

    Untitled

    Abstract: No abstract text available
    Text: FLM3135-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -45dBc@Po = 28.5dBm Broad Band: 3.1 ~ 3.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM3135-8F -45dBc FLM3135-8F 25hods

    Untitled

    Abstract: No abstract text available
    Text: FLM7185-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.0dBm Typ. High Gain: G1dB = 8.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Low IM3 = -45dBc@Po = 30.0dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM7185-12F -45dBc FLM7185-12F

    Untitled

    Abstract: No abstract text available
    Text: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM1011-6F -45dBc 25dBm FLM1011-6F

    C-Band Power GaAs FET

    Abstract: FLC257MH-8
    Text: FLC257MH-8 C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 34.0dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 35%(Typ.) ProvenReliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC257MH-8 is a power GaAs FET that is designed for general


    Original     		PDF FLC257MH-8 FLC257MH-8 C-Band Power GaAs FET

    Untitled

    Abstract: No abstract text available
    Text: FLM1414-8F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM1414-8F -46dBc FLM1414-8F

    Untitled

    Abstract: No abstract text available
    Text: FLM7179-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 42.5dBm Typ. High Gain: G1dB = 8.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM7179-18F -46dBc FLM7179-18F

    eudyna GaAs FET RF Transistor

    Abstract: No abstract text available
    Text: FHX13X, FHX14X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX13X, FHX14X are Super High Electron Mobility Transistor


    Original     		PDF FHX13X, FHX14X 12GHz FHX13) 12GHz FHX14X 2-18GHz eudyna GaAs FET RF Transistor

    15006

    Abstract: STD 243 S N53100Z1EB1 53100z f6z1 EH8006Z1
    Text: Three Phase Bridges Pa rt N u m b er G 5360Z 1EB 1 G 50480Z1EB 1 G 5380Z 1EB 1 G 504100Z1EB 1 G 53100Z 1EB 1 G 504120Z1EB 1 G 53120Z 1EB 1 E HF2Z1 E H S2Z1 EH10002Z1 EH8002Z1 EH 15002Q EH 15002Y N 50420Z1EB1 N 5320Z1EB1 N50440Z1EB1 N 5340Z1EB1 N 50460Z1EB1


    OCR Scan     		PDF 5360Z 50480Z1EB 5380Z 504100Z1EB 53100Z 504120Z1EB 53120Z EH10002Z1 EH8002Z1 15002Q 15006 STD 243 S N53100Z1EB1 f6z1 EH8006Z1

    Untitled

    Abstract: No abstract text available
    Text: IVidcom Midcom's 50480Y: Low percent-power isolation One of Midcom's new signal products may also be used where low-power isolation is required. The product, Midcom's 50480Y, is actually a T1/E1 transformer, but in the right circuit can be used to provide more than 400mW across a 1500 V isolation barrier.


    OCR Scan     		PDF 50480Y: 50480Y, 400mW 50398Y 50477Y 50511Y 50476Y. 50475Y 50572Y