Untitled
Abstract: No abstract text available
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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J2G0143-18-11
MD51V64160
MD51V64160
304-Word
16-Bit
MD51V64160CMOS4
42CMOS
50SOJ50TSOP
19264ms
09664ms
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PDF
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TSOPII50-P-400-0
Abstract: No abstract text available
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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FEDD51V64165E-03
MD51V64165E
304-Word
16-Bit
MD51V64165E
50-pin
TSOPII50-P-400-0
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PDF
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HY51V65164
Abstract: No abstract text available
Text: HY51V64164,HY51V65164 4Mx16, Extended Data Out mode 1st Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 4,194,304 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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HY51V64164
HY51V65164
4Mx16,
16-bit
4Mx16
HY51V65164
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16mx4
Abstract: HY51V64400A
Text: HY51V64400A,HY51V65400A 16Mx4, Fast Page mode 2nd Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow
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HY51V64400A
HY51V65400A
16Mx4,
128ms
cycle/64ms)
16Mx4
10/Sep
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PDF
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Untitled
Abstract: No abstract text available
Text: HY51V64800A,HY51V65800A 8Mx8, Fast Page mode 2nd Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 8,388,608 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow
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HY51V64800A
HY51V65800A
128ms
cycle/64ms)
12/Sep
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PDF
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Untitled
Abstract: No abstract text available
Text: GM71V64403A GM71VS64403AL LG Semicon Co.,Ltd. 16,777,216 WORDS x 4 BIT CMOS DYNAMIC RAM Description Pin Configuration 32 SOJ / TSOP II The GM71V S 64403A/AL is the new generation dynamic RAM organized 16,777,216 words by 4bits. The GM71V(S)64403A/AL utilizes advanced CMOS
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GM71V64403A
GM71VS64403AL
GM71V
4403A/AL
4403A/AL-6
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16mx4
Abstract: HY51V65404A HY51V64404A
Text: HY51V64404A,HY51V65404A 16Mx4, Extended Data Out mode 2nd Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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HY51V64404A
HY51V65404A
16Mx4,
128ms
cycle/64ms)
16Mx4
10/Sep
HY51V65404A
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SOJ32-P-400-1
Abstract: No abstract text available
Text: FEDD51V65400E-03 OKI Semiconductor MD51V65400E Issue Date: Jul. 19, 2005 16,777,216-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSD51V65400E is a 16,777,216-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MD51V65400E achieves high integration, high-speed operation, and
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FEDD51V65400E-03
MD51V65400E
216-Word
MSD51V65400E
MD51V65400E
32-pin
SOJ32-P-400-1
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PDF
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Untitled
Abstract: No abstract text available
Text: LTC3862-2 Multi-Phase Current Mode Step-Up DC/DC Controller FEATURES n n n n n n n n n n n n n n n DESCRIPTION Wide VIN Range: 5.5V to 36V Operation 2-Phase Operation Reduces Input and Output Capacitance Fixed Frequency, Peak Current Mode Control Internal 10V LDO Regulator
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LTC3862-2
75kHz
500kHz)
50kHz
650kHz
12-Phase
24-Lead
500kHz
SSOP-24,
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HY51V18160C
Abstract: No abstract text available
Text: HY51V18160C,HY51V16160C 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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HY51V18160C
HY51V16160C
1Mx16,
16-bit
1Mx16
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IBM0165805B8M
Abstract: IBM0165805BJ3D-50 IBM0165805BJ3D-60 IBM0165805P8M TSOP-32
Text: Discontinued 12/98 - last order; 3/99 last ship IBM0165805B8M x 812/11, 3.3V, EDO. IBM0165805P8M x 812/11, 3.3V, LP, SR, EDO. IBM0165805B IBM0165805P 8M x 8 12/11 EDO DRAM Features • 8,388,608 word by 8 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply
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IBM0165805B8M
IBM0165805P8M
IBM0165805B
IBM0165805P
104ns
IBM0165805BJ3D-50
IBM0165805BJ3D-60
TSOP-32
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4253-01
Abstract: IBM0165405B16M IBM0165405BJ3D-50 IBM0165405BJ3D-60 IBM0165405P16M TSOP-32
Text: Discontinued 12/98 - last order; 3/99 last ship IBM0165405B16M x 412/12, 3.3V, EDO. IBM0165405P16M x 412/12, 3.3V, LP, SR, EDO. IBM0165405B IBM0165405P 16M x 4 12/12 EDO DRAM Features • 16,777,216 word by 4 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply
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IBM0165405B16M
IBM0165405P16M
IBM0165405B
IBM0165405P
104ns
4253-01
IBM0165405BJ3D-50
IBM0165405BJ3D-60
TSOP-32
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HY51V65164A
Abstract: HY51V65164ASLTC HY51V64164A
Text: HY51V64164A,HY51V65164A 4Mx16, Extended Data Out mode 2nd Generation Preliminary DESCRIPTION This family is a 64M bit dynamic RAM organized 4,194,304 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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HY51V64164A
HY51V65164A
4Mx16,
16-bit
4Mx16
HY51V65164A
HY51V65164ASLTC
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SOJ32
Abstract: 1741R
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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J2G0140-18-11
MD51V65800
MD51V65800
608-Word
MD51V65800CMOS8
42CMOS
32SOJ32TSOP
09664ms
32400milSOJ
SOJ32
1741R
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TSOP 54 PIN
Abstract: No abstract text available
Text: IBM0165160B 4M x 16 DRAM Features • Low Power Dissipation - Active: 504mW/432mW/396mW max - Standby (LVTTL Inputs): 7.2mW (max) - Standby (LVCMOS Inputs): 720mW (max) • 4,194,304 word by 16 bit organization • Single 3.3 ± 0.3V power supply • 4096 refresh cydes/64ms
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IBM0165160B
cydes/64ms
504mW/432mW/396mW
720mW
TSOP-54
500milx875mil)
110ns
130ns
IBM0165160BT5A
fabricate01
TSOP 54 PIN
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Untitled
Abstract: No abstract text available
Text: IBM0165405B IBM0165405P 1 6 M x 4 12/12 EDO DRAM Features • 16,777,216 word by 4 bit organization Read-Modify-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out CAS before RAS Refresh - 4096 cycles/Retention Time 64ms Standard Power SP Retention Time
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IBM0165405B
IBM0165405P
104ns
504mW
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PDF
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S5400A
Abstract: RO3035
Text: •« Y U M D H I • HY51 V64400A,HY51 V65400A 16Mx4, Fast Page mode DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow
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V64400A
V65400A
16Mx4,
128ms
cycle/64ms)
S5400A
RO3035
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PDF
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5j98
Abstract: hy51v64804
Text: « « Y U H P f t l ♦ HY51 V64804A,HY51V65804A 8Ux8, Extended Data Out mode DESCRIPTION This family is a 64M bit dynamic RAM organized 8,388,608 x 8-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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OCR Scan
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V64804A
HY51V65804A
128ms
cycle/64ms)
5j98
hy51v64804
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PDF
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4MXW
Abstract: No abstract text available
Text: C HHYum m i * HY51V64160A,HY51V65160A 4MxW , Fast Page mode DESCRIPTION This family is a 64M bit dynamic RAM organized 4,194,304 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow
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HY51V64160A
HY51V65160A
16-bit
4MXW
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PDF
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Untitled
Abstract: No abstract text available
Text: -HYUNDAI HY51V18t60C,HY51V16160C 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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OCR Scan
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HY51V18t60C
HY51V16160C
1Mx16,
16-bit
A0-A11)
DQ0-DQ15)
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PDF
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Untitled
Abstract: No abstract text available
Text: GM71V64403A GM71VS64403AL 16,777,216 w o r d s x 4 b i t I G «ternir a n P n ! fri L u o e m ic o n u o .,L t a . CMOS DYNAMIC RAM Description Pin Configuration 32 S O J /T S O P n The GM71V S 64403A/AL is the new generation dynamic RAM organized 16,777,216 words by 4bits.
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GM71V64403A
GM71VS64403AL
GM71V
4403A/AL
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM0165805B IBM0165805P 8 M x 8 12/11 EDO DRAM Features • 8,388,608 word by 8 bit organization Read-Modify-Write • Single 3.3 ± 0.3V power supply Performance: -50 -60 !I rac ! R AS Access Time 50ns 60ns !tcAC ! CAS Access Time 13ns ' 5ns |tAA ! Column Address Access Tim e
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IBM0165805B
IBM0165805P
104ns
504mW
88H2009
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY51V64160, HY51V65160 4Mx16, Fast Page mode 1st Generation DESCRIPTION This fam ily is a 64M bit dynam ic RAM organized 4,194,304 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access mem ory w ithin the same row. The circuit and process design allow
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HY51V64160,
HY51V65160
4Mx16,
16-bit
0-A12)
4Mx16
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PDF
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K242M
Abstract: l75h MSM54V16255A
Text: PRELIMINARY OK! Semiconductor REVISION-2 1996.11.2 M S M 5 4 V 1 6 2 5 5 A / S L ~~ 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM54V162S5A/SL is a 262,144-word x 16-bit dynamic R A M fabricated in OKI's CM O S silicon gate technology. The MSM54V16255A/SL achieves high integration,high-speed operation,and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM54V16255A/SL is
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MSM54V16255A/SL
144-Word
16-Blt
MSM54V162S5A/SL
16-bit
MSM54V16255A/SL
40-pin
14/40-pin
K242M
l75h
MSM54V16255A
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