504MW Search Results

TSOP 54 PIN

Contextual Info: IBM0165160B 4M x 16 DRAM Features • Low Power Dissipation - Active: 504mW/432mW/396mW max - Standby (LVTTL Inputs): 7.2mW (max) - Standby (LVCMOS Inputs): 720mW (max) • 4,194,304 word by 16 bit organization • Single 3.3 ± 0.3V power supply • 4096 refresh cydes/64ms

Contextual Info: IBM0165405B IBM0165405P 1 6 M x 4 12/12 EDO DRAM Features • 16,777,216 word by 4 bit organization Read-Modify-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out CAS before RAS Refresh - 4096 cycles/Retention Time 64ms Standard Power SP Retention Time

Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

TSOPII50-P-400-0

Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

S5400A

Abstract: RO3035
Contextual Info: •« Y U M D H I • HY51 V64400A,HY51 V65400A 16Mx4, Fast Page mode DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow

HY51V65164

Contextual Info: HY51V64164,HY51V65164 4Mx16, Extended Data Out mode 1st Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 4,194,304 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

16mx4

Abstract: HY51V64400A
Contextual Info: HY51V64400A,HY51V65400A 16Mx4, Fast Page mode 2nd Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow

Contextual Info: HY51V64800A,HY51V65800A 8Mx8, Fast Page mode 2nd Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 8,388,608 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow

Contextual Info: GM71V64403A GM71VS64403AL LG Semicon Co.,Ltd. 16,777,216 WORDS x 4 BIT CMOS DYNAMIC RAM Description Pin Configuration 32 SOJ / TSOP II The GM71V S 64403A/AL is the new generation dynamic RAM organized 16,777,216 words by 4bits. The GM71V(S)64403A/AL utilizes advanced CMOS

16mx4

Abstract: HY51V65404A HY51V64404A
Contextual Info: HY51V64404A,HY51V65404A 16Mx4, Extended Data Out mode 2nd Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

5j98

Abstract: hy51v64804
Contextual Info: « « Y U H P f t l ♦ HY51 V64804A,HY51V65804A 8Ux8, Extended Data Out mode DESCRIPTION This family is a 64M bit dynamic RAM organized 8,388,608 x 8-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

4MXW

Contextual Info: C HHYum m i * HY51V64160A,HY51V65160A 4MxW , Fast Page mode DESCRIPTION This family is a 64M bit dynamic RAM organized 4,194,304 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow

Contextual Info: -HYUNDAI HY51V18t60C,HY51V16160C 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this

Contextual Info: GM71V64403A GM71VS64403AL 16,777,216 w o r d s x 4 b i t I G «ternir a n P n ! fri L u o e m ic o n u o .,L t a . CMOS DYNAMIC RAM Description Pin Configuration 32 S O J /T S O P n The GM71V S 64403A/AL is the new generation dynamic RAM organized 16,777,216 words by 4bits.

Contextual Info: IBM0165805B IBM0165805P 8 M x 8 12/11 EDO DRAM Features • 8,388,608 word by 8 bit organization Read-Modify-Write • Single 3.3 ± 0.3V power supply Performance: -50 -60 !I rac ! R AS Access Time 50ns 60ns !tcAC ! CAS Access Time 13ns ' 5ns |tAA ! Column Address Access Tim e

Contextual Info: •HYUNDAI HY51V64160, HY51V65160 4Mx16, Fast Page mode 1st Generation DESCRIPTION This fam ily is a 64M bit dynam ic RAM organized 4,194,304 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access mem ory w ithin the same row. The circuit and process design allow

K242M

Abstract: l75h MSM54V16255A
Contextual Info: PRELIMINARY OK! Semiconductor REVISION-2 1996.11.2 M S M 5 4 V 1 6 2 5 5 A / S L ~~ 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM54V162S5A/SL is a 262,144-word x 16-bit dynamic R A M fabricated in OKI's CM O S silicon gate technology. The MSM54V16255A/SL achieves high integration,high-speed operation,and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM54V16255A/SL is

Contextual Info: LTC3862-2 Multi-Phase Current Mode Step-Up DC/DC Controller FEATURES n n n n n n n n n n n n n n n DESCRIPTION Wide VIN Range: 5.5V to 36V Operation 2-Phase Operation Reduces Input and Output Capacitance Fixed Frequency, Peak Current Mode Control Internal 10V LDO Regulator

HY51V18160C

Contextual Info: HY51V18160C,HY51V16160C 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this

IBM0165805B8M

Abstract: IBM0165805BJ3D-50 IBM0165805BJ3D-60 IBM0165805P8M TSOP-32
Contextual Info: Discontinued 12/98 - last order; 3/99 last ship IBM0165805B8M x 812/11, 3.3V, EDO. IBM0165805P8M x 812/11, 3.3V, LP, SR, EDO. IBM0165805B IBM0165805P 8M x 8 12/11 EDO DRAM Features • 8,388,608 word by 8 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply

4253-01

Abstract: IBM0165405B16M IBM0165405BJ3D-50 IBM0165405BJ3D-60 IBM0165405P16M TSOP-32
Contextual Info: Discontinued 12/98 - last order; 3/99 last ship IBM0165405B16M x 412/12, 3.3V, EDO. IBM0165405P16M x 412/12, 3.3V, LP, SR, EDO. IBM0165405B IBM0165405P 16M x 4 12/12 EDO DRAM Features • 16,777,216 word by 4 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply

HY51V65164A

Abstract: HY51V65164ASLTC HY51V64164A
Contextual Info: HY51V64164A,HY51V65164A 4Mx16, Extended Data Out mode 2nd Generation Preliminary DESCRIPTION This family is a 64M bit dynamic RAM organized 4,194,304 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

SOJ32

Abstract: 1741R
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

MD51V65165

Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株