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    Untitled

    Abstract: No abstract text available
    Text: AMIC TECHNOLOGY Taiwan , INC. Spec. No. : 04-83-002 Update : 12/17/1999 Pages : 1 of 9 TAPE&REEL PACKING SPECIFICAITON 1. Packing Procedures 2. Carrier Tape Dimensions - 28SOP,26/28SOJ,28TSOP,32sTSOP 3. Carrier Tape Dimensions - 32/40/44SOP,32/40SOJ,32/44/50TSOP,100QFP


    Original     		PDF 28SOP 26/28SOJ 28TSOP 32sTSOP 32/40/44SOP 32/40SOJ 32/44/50TSOP 100QFP 36/48Mini-BGA

    s134 p-mosfet

    Abstract: 74hc260 Mitsumi D359T3 D359T3 schematic diagram inverter lcd monitor fujitsu 62256-10 BERG STRIP teac fd 235hf stepping motor mitsumi mitsumi floppy
    Text: frt Page 1 Thursday, August 8, 1996 12:36 PM ÉlanSC300 Microcontroller Evaluation Board User’s Manual evalbd.book : frt Page 2 Thursday, August 8, 1996 12:14 PM ÉlanSC300 Microcontroller Evaluation Board, Revision 1.1 1996 by Advanced Micro Devices, Inc.


    Original     		PDF lanSC300 s134 p-mosfet 74hc260 Mitsumi D359T3 D359T3 schematic diagram inverter lcd monitor fujitsu 62256-10 BERG STRIP teac fd 235hf stepping motor mitsumi mitsumi floppy

    MR27T25603L

    Abstract: No abstract text available
    Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


    Original     		PDF FEDR27T25603L-002-05 MR27T25603L 216-word 16-bit/33 432-word MR27T25603L-xxxTM 50-pin 50-P-400-0 MR27T25603L

    MR27V25603L

    Abstract: 66 pin tsop package
    Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


    Original     		PDF FEDR27V25603L-02-02 MR27V25603L 216-word 16-bit/33 432-word MR27V25603L-xxxTM) MR27V25603L-xxxTME) MR27V25603L-xxxTM, MR27V25603L-xxxTME 50-pin MR27V25603L 66 pin tsop package

    Untitled

    Abstract: No abstract text available
    Text: K4S161622D CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.5 September 2000 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.5 Sep. '00 K4S161622D CMOS SDRAM Revision History


    Original     		PDF K4S161622D 16bit K4S161622D-70. K4S161622D 50-TSOP2-400CF 20MAX

    Untitled

    Abstract: No abstract text available
    Text: K4S161622D-TI/P CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Industrial Temperature Revision 1.0 June 1999 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 Jun . 1999 K4S161622D-TI/P


    Original     		PDF K4S161622D-TI/P 16bit K4S161622D K4S161622D 50-TSOP2-400F

    pal 007c

    Abstract: b1100 nec LDP16 sulzer s7 7-segment countdown timer MDP36 100LQ128 3pin round shell connector DP83932B LT1084CT-3.3
    Text: MiniRISC BDMR4011 Evaluation Board User’s Guide A CoreWare® Product March 1998 ® Order Number XXXXX Document DB15-000055-00, First Edition March 1998 This document describes revision A of LSI Logic Corporation’s BDMR4011 Evaluation Board and will remain the official reference source for all revisions/releases of this product until rescinded by an update.


    Original     		PDF BDMR4011 DB15-000055-00, respons3580 pal 007c b1100 nec LDP16 sulzer s7 7-segment countdown timer MDP36 100LQ128 3pin round shell connector DP83932B LT1084CT-3.3

    Untitled

    Abstract: No abstract text available
    Text: KM416S1120D CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.4 May 1999 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.4 May. 1999 KM416S1120D CMOS SDRAM Revision History


    Original     		PDF KM416S1120D 16bit KM416S1120D-6 11CLK) 10CLK) /-10uA. KM416S1120DT-G/F8 KM416S1120DT-G/F10 KM416S1120D-Z

    Untitled

    Abstract: No abstract text available
    Text: PEDR27V25653L-02-05 OKI Semiconductor MR27V25653L 16M–Word x 16–Bit or 32M–Word × 8–Bit Page Mode Issue Date: Jul. 9, 2004 Preliminary P2ROM FEATURES • 16,777,216-word × 16-bit / 33,554,432-word × 8-bit electrically switchable configuration · Page size of 8-word x 16-Bit or 16-word x 8-Bit


    Original     		PDF MR27V25653L PEDR27V25653L-02-05 216-word 16-bit 432-word 16-word 50TSOP

    Untitled

    Abstract: No abstract text available
    Text: PEDR27V25653L-02-02 OKI Semiconductor MR27V25653L 16M–Word x 16–Bit or 32M–Word × 8–Bit Page Mode Issue Date: Apr. 9, 2004 Preliminary P2ROM FEATURES • 16,777,216-word × 16-bit / 33,554,432-word × 8-bit electrically switchable configuration · Page size of 8-word x 16-Bit or 16-word x 8-Bit


    Original     		PDF MR27V25653L PEDR27V25653L-02-02 216-word 16-bit 432-word 16-word 50TSOP

    Z04B

    Abstract: MR27V6441L MARK Z04D MR27V6441L-xxxMP Z04D 48TSOP2 ST03
    Text: OKI Semiconductor MR27V6441L PEDR27V6441L-02-03 Issue Date: April 4, 2005 Preliminary 64M x 1–Bit Serial Production Programmed ROM P2ROM GENERAL DESCRIPTION The MR27V6441L is a 64 Mbit Production Programmed Read-Only Memory, which is configured as 67,108,864 word × 1-bit. The MR27V6441L supports a simple read operation using a single 3.3V power supply


    Original     		PDF MR27V6441L PEDR27V6441L-02-03 MR27V6441L 33MHz 20MHz 42SOJ 48BGA 28SOP Z04B MARK Z04D MR27V6441L-xxxMP Z04D 48TSOP2 ST03

    300b tube

    Abstract: 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64
    Text: Samsung Proprietary [ Shipping Quantity Information ] As of 2004-03-02 Divide DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM


    Original     		PDF FBGA-11 24-SOJ-300 -SOJ-300 -TSOP2-300AF -SOJ-300B 28-SOJ-300 28-SOJ-300A 28-SOJ-400 300b tube 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64

    HY57V161610FTP

    Abstract: HY57V161610F-Series
    Text: 16Mb Synchronous DRAM based on 512K x 2Bank x16 I/O Document Title 2Bank x 512K x 16bits Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Feb. 2006 Preliminary This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 16bits 11Preliminary 16Mbit 1Mx16bit) HY57V161610FT HY57V161610F-Series 216-bits HY57V161610FTP

    Z04B

    Abstract: MARK Z04D
    Text: FEDR27T1641L-02-H1 ＯＫＩ Semiconductor MR27T1641L This version : Feb.28, 2005 Previous version: -.- 8M x 1–Bit Serial Production Programmed ROM P2ROM GENERAL DESCRIPTION The MR27T1641L is a 16 Mbit Production Programmed Read-Only Memory, which is configured as


    Original     		PDF FEDR27T1641L-02-H1 MR27T1641L MR27T1641L 30MHz 20MHz 42SOJ 48BGA 28SOP Z04B MARK Z04D

    KM416S1120DT

    Abstract: KM416S1120D
    Text: KM416S1120D CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.4 June 1999 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.4 Jun. 1999 KM416S1120D CMOS SDRAM Revision History


    Original     		PDF KM416S1120D 16bit KM416S1120D-7/8 21ns/20ns 67ns/68ns KM416S1120D-6 11CLK) KM416S1120DT KM416S1120D

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    S8S3122X16

    Abstract: S8S3122X16-TCR1 S8S3122X16-TCR2
    Text: S8S3122X16 CMOS SDRAM 256K x 16 SDRAM 128K x 16bit x 2 Banks Synchronous DRAM LVTTL Version 0.0 Sep 2001 Samsung Electronics reserves the right to change products or specification without notice. Ver 0.0 Sep. '01 S8S3122X16 CMOS SDRAM Revision History Version 0.0 Sep. 2001


    Original     		PDF S8S3122X16 16bit AG1000re 50-TSOP2-400CF 20MAX 10MAX 075MAX S8S3122X16 S8S3122X16-TCR1 S8S3122X16-TCR2

    Untitled

    Abstract: No abstract text available
    Text: FEDR27T25603L-02-02 OKI Semiconductor MR27T25603L 16M–Word x 16–Bit or 32M–Word × 8–Bit Issue Date: Jun. 8, 2004 P2ROM FEATURES •16,777,216-word × 16-bit/33,554,432-word × 8-bit electrically switchable configuration · 2.7 V to 3.6 V power supply


    Original     		PDF MR27T25603L FEDR27T25603L-02-02 216-word 16-bit/33 432-word

    Z04B

    Abstract: MARK Z04D
    Text: OKI Semiconductor MR27V1641L FEDR27V1641L-02-H1 Issue Date: April 21, 2006 16M x 1–Bit Serial Production Programmed ROM P2ROM GENERAL DESCRIPTION The MR27V1641L is a 16 Mbit Production Programmed Read-Only Memory, which is configured as 16,777,216 word × 1-bit. The MR27V1641L supports a simple read operation using a single 3.0V or 3.6V power


    Original     		PDF MR27V1641L FEDR27V1641L-02-H1 MR27V1641L 30MHz 20MHz 42SOJ 48BGA 28SOP Z04B MARK Z04D

    K4S161622E-TI

    Abstract: No abstract text available
    Text: K4S161622E-TI/E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Industrial/ExtendedTemperature Revision 0.0 June 2001 Samsung Electronics reserves the right to change products or specification without notice. Rev 0.0 Jun '01 K4S161622E-TI/E


    Original     		PDF K4S161622E-TI/E 16bit K4S161622E 50-TSOP2-400CF 20MAX 10MAX 075MAX K4S161622E-TI

    Untitled

    Abstract: No abstract text available
    Text: PEDR27V25653L-02-03 OKI Semiconductor MR27V25653L 16M–Word x 16–Bit or 32M–Word × 8–Bit Page Mode Issue Date: Apr. 27, 2004 Preliminary P2ROM FEATURES • 16,777,216-word × 16-bit / 33,554,432-word × 8-bit electrically switchable configuration · Page size of 8-word x 16-Bit or 16-word x 8-Bit


    Original     		PDF PEDR27V25653L-02-03 MR27V25653L 216-word 16-bit 432-word 16-word MR27V25603L-xxxTM 50-pin 50-P-400-0

    KM416S1020

    Abstract: 2 Banks x 512K x 16
    Text: KM416S1020C CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 0.6 September 1998 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 0.6 Sep. 1998 KM416S1020C CMOS SDRAM Revision History


    Original     		PDF KM416S1020C 16bit KM416S1020C-H/L 100MHz KM416S1020C-8 KM416S1020C-7 115mA KM416S1020 2 Banks x 512K x 16

    Untitled

    Abstract: No abstract text available
    Text: KM416S1020C CMOS SDRAM 1Mx 16 SDRAM 5 12K X 16bit X 2 Banks Synchronous DRAM LVTTL Revision 0.6 September 1998 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.6 Sep. 1998 ELECTRONICS KM416S1020C CMOS SDRAM


    OCR Scan     		PDF KM416S1020C 16bit KM416S1020C-H/L 100MHz KM416S1020C-8 KM416S1020C-7 115mA

    54TSOP2

    Abstract: No abstract text available
    Text: PACKAGE DIMENSIONS CMOS DRAM PLASTIC THIN S M A LL OUT-LINE P A C K A G E TYPE II 44TSOP2-400F Unit : Millimeters #44 fl RFi fl ñR T lf HöHHb #1 0.005'to.oai & -M A X 1.20 18.41«o.io 0.725 «00S4 .y 0.047 1.00»o.io 0.039* 0 .00« TTnOTTOTPTÜTOOTÜ ,0 .605'


    OCR Scan     		PDF 44TSOP2-400F 50-TSOP2-400F 54-TSOP2-400F 86-TSOP2-400F 54TSOP2