E112 jfet
Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Text: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261
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LS422
LS423
LS424
LS425
LS426
LS832
LS833
LS4391
LS5911
E112 jfet
siliconix E412
NPD5564
jfet e300
NPD5566
DATA SHEET OF FET BFW10
E402 dual jfet
E430 jfet
E310 JFET N
NPD5565
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EIGHT MOSFET ARRAY
Abstract: 7131a DIG-131A 7474 PIN DIAGRAM Isolated Feedback Generator an DIG-132 DIG-132A photovoltaic charge controller circuit
Text: C' D HIGH SPEED PHOTOVOLTAIC N-CHANNEL MOSFET-DRIVER* DIG-131A DIG-132A 65 RUSHMORE STREET, WESTBURY, NEW YORK 11590 516 997-7474 TWX 510*222*0974 FEATURES * OPTICALLY VOLTAGE * LOW POWER * EIGHT PIN ISOLATED GENERATION CONSUMPTION DIP PACKAGE APPLICATIONS
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OCR Scan
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DIG-131A
DIG-132A
DIG-132&
DIG-1304FAMILY.
DIG-13X
2fl4flfl04
EIGHT MOSFET ARRAY
7131a
7474 PIN DIAGRAM
Isolated Feedback Generator an
DIG-132
DIG-132A
photovoltaic charge controller circuit
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relays
Abstract: dil reed relay relay smd reed relay 0641 relay pcb 510 MOSFET MOSFET 546 Relay Mosfet Output relays datasheets
Text: RELAYS PRODUCT OVERVIEW A brief overview of the extensive range of relays shown on the following pages. SOLID STATE RELAYS MOSFET OUTPUT REED RELAYS Surface Mount & Through Hole pages 510-515 SIL, DIL & SMD page 516 PCB MOUNTING RELAYS SUB-MINIATURE SIGNAL
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PG/0641
relays
dil reed relay
relay
smd reed relay
0641
relay pcb
510 MOSFET
MOSFET 546
Relay Mosfet Output
relays datasheets
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PDF
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mosfet v0
Abstract: CA5260 CA5260T
Text: blE D HARRIS SEMICOND SECTOR m • 4302271 0Q4fc>427 510 B H A S CA5260 HARRIS SEMICONDUCTOR BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output March 1993 Features Description • MOSFET Input Stage provides • Very High 3 » 1.5TO 1 5 x 10120 Typ.
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OCR Scan
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CA5260
CA5260A
CA5260
CA5160
10kil
43DS271
G04b431
CA5260,
CA5260A
mosfet v0
CA5260T
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EIGHT MOSFET ARRAY
Abstract: transistor ac 132 Switch Mode Power Supplies ac dc mosfet DIG-130 Isolated Feedback Generator an DIG-131 DIG-132 photovoltaic charge controller circuit mosfetdriver Dionics
Text: 31E D DIONICS INC B 5ÖMÜÖ0M D0003ññ M B S D 10 7 = V /-S \3 HIGH SPEED PHOTOVOLTAIC N-CHANNEL MOSFET-DRIVER* DIG-130 DIG-131 DIG-132 i 65 RUSHMORE STREET, WESTBURY, NEW YORK 11590 516 997-7474 TWX 510*222*0974 FEATURES * OPTICALLY VOLTAGE * LOW POWER
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OCR Scan
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DIG-130
DIG-131
DIG-132
DIG-130/131/132
DIG-13X
EIGHT MOSFET ARRAY
transistor ac 132
Switch Mode Power Supplies ac dc mosfet
Isolated Feedback Generator an
DIG-132
photovoltaic charge controller circuit
mosfetdriver
Dionics
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PDF
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EIGHT MOSFET ARRAY
Abstract: 200v 100mA mosfet DIG-130 EIGHT n-channel MOSFET ARRAY
Text: 31E D DIONICS INC B EÖMÖÖOM 0GQ03ÛÔ M B S D 10 7=V/-?3 HIGH SPEED PHOTOVOLTAIC N-CHANNEL MOSFET-DRIVER* DIG-130 DIG-131 DIG-132 65 RUSHMORE STREET, WESTBURY, NEW YORK 11590 516 997-7474 TWX 510*222*0974 FEATURES * OPTICALLY VOLTAGE * LOW POWER * EIGHT PIN
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OCR Scan
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0GQ03Û
DIG-130
DIG-131
DIG-132
DIG-130/131/132
-100K
EIGHT MOSFET ARRAY
200v 100mA mosfet
EIGHT n-channel MOSFET ARRAY
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KY transistor
Abstract: 150B
Text: Case Outlines and Dimensions - T0-254AA Tabless Standard & Low Ohmic 0.13 [.005] 13.84 [.545] 13.59 [.535] A 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 1 C 2 3 2X 0.84 [.033] MAX. 17.40 [.685] 12.95 [.510] 3X 3.81 [.150] B 1.14 [.045] 0.89 [.035]
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T0-254AA
5M-1994.
O-254AA
KY transistor
150B
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varistor 565-1
Abstract: Z 151 VARISTOR VARISTOR etc 333 varistor 6kv 3ka 3SM diode VDE 565-1 WXP-103K 4532 MOSFET varistor en132400 varistor 471 14
Text: 2 | Protection Products Short Form Catalog Metal Oxide Varistor VDE Diameters Peak Current, 8/20ms Amps Varistor Voltages 5mm 100, 400, 800 18, 22, 27, 33, 39, 47, 56, 68, 82, 100, 120, 150, 180, 200, 220, 240, 270, 300, 330, 360, 390, 430, 470, 510, 560, 620, 680
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8/20ms
varistor 565-1
Z 151 VARISTOR
VARISTOR etc 333
varistor 6kv 3ka
3SM diode
VDE 565-1
WXP-103K
4532 MOSFET
varistor en132400
varistor 471 14
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pwm circuits
Abstract: SOT-263 BUK100
Text: 40 Power Devices Power M O SFET Transistors Protected M OSFET Switches TOPFET TOPFET is a range of protected MOSFET switches featuring a m onolithic construction and providing the follow ing protection features: • ESD protection on all pins • Overvoltage protection
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OCR Scan
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T0-220AB
OT-263
BUK100-50GL
BUK104-50L
BUK104-50S
BUK100-50GS
BUK101-50GL
BUK105-50L
BUK105-50S
BUK101-50GS
pwm circuits
SOT-263
BUK100
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3N171
Abstract: 3N170 3N170-1
Text: 3N170 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds on ≤ 200Ω FAST SWITCHING td(on) ≤ 3.0ns TO-72 BOTTOM VIEW 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated)
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3N170
3N171
3N170
300mW
3N171
3N170-1
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3n170 intersil
Abstract: amelco
Text: 3N170, 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds on ≤ 200Ω FAST SWITCHING td(on) ≤ 3.0ns ABSOLUTE MAXIMUM RATINGS 3N170, 171 1 3N170, 171 SOT-143 TOP VIEW @ 25 °C (unless otherwise stated)
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3N170,
3N171
3N170
OT-143
300mW
25-year-old,
3n170 intersil
amelco
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PDF
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3N163
Abstract: 3N164
Text: 3N163, 3N164 P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Drain-Source or Drain-Gate Voltage
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3N163,
3N164
3N163
375mW
RIN10M
300ms.
3N163
3N164
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amelco
Abstract: UNION CARBIDE
Text: 3N170, 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds on ≤ 200 FAST SWITCHING td(on) ≤ 3.0ns ABSOLUTE MAXIMUM RATINGS 3N170, 171 1 3N170, 171 SOT-143 TOP VIEW @ 25 °C (unless otherwise stated)
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3N170,
3N171
3N170
OT-143
300mW
25-year-old,
amelco
UNION CARBIDE
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N4351 N-CHANNEL MOSFET ENHANCEMENT MODE s FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 100mA HIGH GAIN TO-72 BOTTOM VIEW gfs = 1000µS 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated G 2 3 D S 1 4 C Maximum Temperatures
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2N4351
100mA
375mW
300ms.
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mosfet 2n4351
Abstract: No abstract text available
Text: 2N4351 N-CHANNEL MOSFET ENHANCEMENT MODE FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 20mA HIGH GAIN gfs = 1000µS ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated 1 Maximum Temperatures Storage Temperature -55 to +150 °C
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2N4351
350mW
25-year-old,
mosfet 2n4351
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2N4351
Abstract: mosfet 2n4351
Text: 2N4351 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 100mA HIGH GAIN TO-72 BOTTOM VIEW gfs = 1000µS 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures
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2N4351
100mA
375mW
300ms.
2N4351
mosfet 2n4351
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PDF
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3n163
Abstract: UNION CARBIDE
Text: 3N163, 3N164 P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS @ 25°C unless otherwise stated Drain-Source or Drain-Gate Voltage 3N163 -40V
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3N163,
3N164
3N163
375mW2
OT-143
350mW3
OT-143
3n163
UNION CARBIDE
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PDF
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intersil dual p-channel mosfet to-78
Abstract: 3N190 3N191
Text: 3N190 3N191 P-CHANNEL DUAL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 LOW GATE LEAKAGE CURRENT IGSS ≤ ±10pA LOW TRANSFER CAPACITANCE Crss ≤ 1.0pF 1 TO-78 BOTTOM VIEW C ABSOLUTE MAXIMUM RATINGS
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3N190
3N191
3N190
300mW
525mW
intersil dual p-channel mosfet to-78
3N191
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PDF
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3N165
Abstract: 3N170 3N171
Text: 3N170, 3N171 N-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE LOW SWITCHING VOLTAGES LOW DRAIN-SOURCE RESISTANCE LOW REVERSE TRANSFER CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted)
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3N170,
3N171
300ms.
3N165
3N170
3N171
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Untitled
Abstract: No abstract text available
Text: Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S h O I* t F O f lH D â tS Selector Guide Discrete MOSFET - Low Voltage Trench Gate (continued) 2.5V Driver Voltage p-channel MOSFETs Electrical Characteristics Maximum Ratings, T, = 25°C
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OCR Scan
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O-220FN
O-220
O-220S
TQ-220S
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PDF
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Untitled
Abstract: No abstract text available
Text: 3N190 3N191 P-CHANNEL DUAL MOSFET ENHANCEMENT MODE FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 LOW GATE LEAKAGE CURRENT IGSS ≤ ±10pA LOW TRANSFER CAPACITANCE Crss ≤ 1.0pF TO-78 TOP VIEW ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated
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3N190
3N191
3N190
300mW
525mW
25-year-old,
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PDF
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3N165
Abstract: 3N166
Text: 3N165, 3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2)
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3N165,
3N166
3N165
300ms.
3N165
3N166
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PDF
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Untitled
Abstract: No abstract text available
Text: 3N190 3N191 P-CHANNEL DUAL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 IGSS ≤ ±10pA LOW GATE LEAKAGE CURRENT Crss ≤ 1.0pF LOW TRANSFER CAPACITANCE ABSOLUTE MAXIMUM RATINGS TO-78 TOP VIEW 1 case &
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Original
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3N190
3N191
3N190
300mW
525mW
25-year-old,
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PDF
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Untitled
Abstract: No abstract text available
Text: 3N190 3N191 P-CHANNEL DUAL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 IGSS ≤ ±10pA LOW GATE LEAKAGE CURRENT Crss ≤ 1.0pF LOW TRANSFER CAPACITANCE ABSOLUTE MAXIMUM RATINGS TO-78 TOP VIEW 1 case &
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3N190
3N191
3N190
300mW
525mW
25-year-old,
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PDF
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