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    5117400A Price and Stock

    Hitachi Ltd HM5117400ATS6

    4M X 4 FAST PAGE DRAM Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA HM5117400ATS6 18
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    5117400A Datasheets Context Search

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    MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

    Abstract: EIAJ ED-4701-1 IEC60068 repair manual suzuki The Japanese Transistor Manual 1981 JIS-C-7032 AB-6201 Diode SMD SJ 19 electron gun CRT 1978 Data catalog
    Text: This version: Sep. 2001 Previous version: Nov. 1996 DATA BOOK for QUALITY/RELIABILITY INTRODUCTION Thank you for supporting Oki Semiconductor products. To welcome the dawn of a new age of unlimited potential brought about by advances in the global network


    Original     		PDF MIL-STD-883 MIL-STD-202 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR EIAJ ED-4701-1 IEC60068 repair manual suzuki The Japanese Transistor Manual 1981 JIS-C-7032 AB-6201 Diode SMD SJ 19 electron gun CRT 1978 Data catalog

    induction cooker schematic diagram

    Abstract: schematic diagram induction cooker gas cooker circuit ignitor 4701-306 foundry metals quality MANUALS transistor 1411 tester diagram induction cooker yamaha amplifier a 550 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR GAS COOKER IGNITOR
    Text: '04 Hand Book for QUALITY/RELIABILITY Issue Date: May 11, 2004 INTRODUCTION Thank you for supporting Oki Semiconductor products. To welcome the dawn of a new age of unlimited potential brought about by advances in the global network information revolution, the Oki semiconductor business was launched as a new company, Silicon Solution


    Original     		PDF

    sem 2106 inverter diagram

    Abstract: induction cooker schematic diagram automatic brake failure indicator and engine heating alarm working principles of dc fan in toshiba air conditioner atm with an eye seminar report sem 2106 inverter transistor smd marking mx ODOMETER transistor 9015 c sem 2106 manual
    Text: This version: Jan. 1998 Previous version: Nov. 1996 E2S0001-27-Y3 Introduction Thank you for supporting OKI Semiconductor products. In the rapidly advancing electronics industry, types of semiconductor applications are diversified, and customer demands for


    Original     		PDF E2S0001-27-Y3 MIL-STD-883 MIL-STD-202 sem 2106 inverter diagram induction cooker schematic diagram automatic brake failure indicator and engine heating alarm working principles of dc fan in toshiba air conditioner atm with an eye seminar report sem 2106 inverter transistor smd marking mx ODOMETER transistor 9015 c sem 2106 manual

    Q907

    Abstract: Q67100-Q915 Q554b
    Text: SIEM ENS 4 M X 4-Bit Dynamic RAM 2 k-refresh HYB 5117400AJ-50/-60/-70/-80 HYB 5117400ASJ-50/-60/-70/-80 Preliminary Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time:


    OCR Scan     		PDF 5117400AJ-50/-60/-70/-80 5117400ASJ-50/-60/-70/-80 235b05 D0SSH72 Q907 Q67100-Q915 Q554b

    Untitled

    Abstract: No abstract text available
    Text: M UT" >5" 5 HB56A441BR Series 4,194,304-Word x 40-Bit High Density Dynamic RAM Module Rev. 1 Mar. 1,1994 HITACHI The HB56A441BR is a 4 M x 40 dynamic RAM m odule, m ounted 10 pieces of 16-M bit DRAM H M 5117400A S sealed in SOJ package. An outline of the HB56A441BR is 72-pin single in­


    OCR Scan     		PDF HB56A441BR 304-Word 40-Bit 117400A 72-pin HB56A441BR-6A

    ALRS8

    Abstract: No abstract text available
    Text: m iir 1^ 2 , 5117400A/AL Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI The H itachi H M 5117400A /A L is a CMOS dynamic RAM organized 4,194,304 words x 4 bits. It employs the most advanced CMOS technology for high p erform ance and low pow er. The


    OCR Scan     		PDF HM5117400A/AL 304-word 117400A HM5117400AS/ALS-6 HM5117400AS/ALS-7 HM5117400AS/ALS-8 300-mil 24/26-pin CP-24DB) ALRS8

    Untitled

    Abstract: No abstract text available
    Text: HB56D836 Series 8 ,3 8 8 ,6 0 8 -w o r d x 3 6 -b lt H ig h D e n s ity D y n a m ic R A M M o d u le The HB56D 836 is a 8 M x 36 dynam ic RAM module, mounted 16 pieces of 16-Mbit DRAM HM 5117400AS sealed in SOJ package and 8 pieces of 4-M bit DRAM (H M 514100B S/C S)


    OCR Scan     		PDF HB56D836 HB56D 16-Mbit 5117400AS) 514100B 72-pin HB56D836BR-6A

    RAS 05

    Abstract: HB56D436SBR-7AC HB56D436BR-7A HBS6D436SBR-8A hb56d436br-6ac
    Text: HB56D436 Series 4,194,304-word x 36-bit High D ensity D ynam ic R AM Module T h e H B 56D 436 is a 4 M x 36 d y n am ic RA M m o d u le, m ounted 8 p iece s o f 16 -M b it D R A M H M 5117400A S sealed in SO J package and 4 p ie c e s o f 4 -M b it D R A M (H M 5 1 4 1 0 0 B S /C S )


    OCR Scan     		PDF HB56D436 304-word 36-bit 117400A HB56D436BR-6A HB56D436BR-7 RAS 05 HB56D436SBR-7AC HB56D436BR-7A HBS6D436SBR-8A hb56d436br-6ac

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5 1 17400 A 4,194,304-Word x 4-Bit D YNAM IC RAM : FAST PAGE M O DE TYPE D E S C R IP T IO N The 5117400A is a new generation dynam ic organized as 4,194,304-w ord x 4-bit. The technology used to fabricate the M SM 5117400A is O K I's C M O S silicon gate process technology.


    OCR Scan     		PDF 304-Word MSM5117400A 304-w 117400A cycles/32ms MSM5117400A A0-A10

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S 4 M X 4-Bit Dynamic RAM 2 k-refresh HYB 5117400AJ-50/-60/-70/-80 HYB 5117400ASJ-50/-60/-70/-80 Prelim inary Information • • • 4 194 304 words by 4-bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time:


    OCR Scan     		PDF 5117400AJ-50/-60/-70/-80 5117400ASJ-50/-60/-70/-80

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor M SM 5117400A 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 5117400A is a 4,194354-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The 5117400A achieves high integration, high-speed operation, and low-power


    OCR Scan     		PDF 117400A 304-Word MSM5117400A 194354-word 26/24-pin cycles/32

    HB56A841BR-6A

    Abstract: D8553
    Text: HB56A841BR Series 8,388,608-Word x 40-Btt High Density Dynamic RAM Module HITACHI The HB56A841BR is a 8 M x 40 dynamic RAM m odule, m ounted 20 pieces of 16-M bit DRAM H M 5117400A S sealed in SOJ package. An outline of the HB56A841BR is 72-pin single in­


    OCR Scan     		PDF HB56A841BR 608-Word 40-Btt 117400A 72-pin HB56A841BR-6A D8553

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 4 M X 4-Bit Dynamic RAM 2 k-refresh HYB 5117400AJ-50/-60/-70/-80 HYB 5117400ASJ-50/-60/-70/-80 Preliminary Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time:


    OCR Scan     		PDF 5117400AJ-50/-60/-70/-80 5117400ASJ-50/-60/-70/-80

    Untitled

    Abstract: No abstract text available
    Text: 5117400A Series -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The 5117400A is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The 5117400A utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117400A HY5117400A 117400A 1AD27-10-MAY9S HY5117400AJ HY5117400AT Y5117400ASLT HY5117400AR

    D74HA3.7A-C

    Abstract: No abstract text available
    Text: HB56D836BT/SBT-6AC/7AC/8AC Preliminary 8,388,608-Word x 36-Bit High Density Dynamic RAM Module HITACHI ¡¡SS,» T h e H B 5 6 D 8 3 6 is a 8 M x 36 d y n a m ic R A M m o d u le, m o u n ted 16 p ieces o f 16-M bit D R A M H M 5 1 1 7 4 0 0 A S sealed in S O J p a ck a g e a n d 8


    OCR Scan     		PDF HB56D836BT/SBT-6AC/7AC/8AC 608-Word 36-Bit D74HA3.7A-C

    5117400A

    Abstract: No abstract text available
    Text: ADE-203-249 Z HB56T433D Series 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI The HB56T433D is a 4 M x 32 dynamic RAM Small Outline DIMM (S.O.DIM M ), mounted 8 pieces o f 16 M bit DRAM (H M 5 117400A TS/ ALTS) sealed in TSOP package. An outline of the


    OCR Scan     		PDF ADE-203-249 HB56T433D 304-word 32-bit 17400A 72-pin 16-bit 5117400A

    514400

    Abstract: 511000 dram ON SEMICONDUCTOR 241 bt 2411 514256 511000
    Text: SIEM EN S Packing Information DRAMS in Tape & Reel Package Type Device Type Devices per Reel Tape Width P-SOJ-26/20-11» HYB 511000 HYB 514256 1500 24 mm P-SOJ-26/20-52’ HYB 514100 HYB 514400 1500 24 mm P-SOJ-28-2 HYB 514800 1000 24 mm & 32 mm P-SOJ-40-1


    OCR Scan     		PDF P-SOJ-26/20-11 P-SOJ-26/20-52' P-SOJ-28-2 P-SOJ-40-1 P-TSOPII-26/20-1 P-SOJ-28/24-1 5116400J 5117400ASJ 5116400ASJ 5116400AJ 514400 511000 dram ON SEMICONDUCTOR 241 bt 2411 514256 511000

    HY5117400A

    Abstract: A1D10 HY5117400AJ60 HY5117400AJ 1AD27-10-MA HY5117400 AMO 0210 OH371
    Text: 5117400A Series • H Y U N D A I 4M 4-bit CMOS DRAM X DESCRIPTION The 5117400A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. T he 5117400A utilizes Hyundai’s CM O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117400A HY5117400A Y5117400A 1AD27-10-MA HY5117400AJ HY5117400ASLJ HY5117400AT HY5117400ASLT A1D10 HY5117400AJ60 HY5117400 AMO 0210 OH371

    DYNAMIC RAM CROSS REFERENCE

    Abstract: DYNAMIC RAM dynamic ram module 5116800 hyb 511
    Text: SIEM EN S Contents Contents Page Summary of Types incl. ordering codes . 9 Packing Inform


    OCR Scan     		PDF

    m51174

    Abstract: m5117400 M511740
    Text: ADE-203-180C Z H M 5 1 1 7 4 0 0 A / A L Series 4,194,304-word x 4-bit Dynamic Random Access Memory Rev. 3.0 Nov. 22, 1994 HITACHI T he H ita c h i H M 5 1 1 7 4 0 0 A /A L is a C M O S dynamic RAM organized 4,194,304 word x 4 bit. It employs the most advanced CMOS technology


    OCR Scan     		PDF ADE-203-180C 304-word 117400A HM5117400AS/ALS-6 HM5117400AS/ALS-7 M5117400AS/ALS-8 M5117400ATS/ALTS-6 M5117400ATS/ALTS-7 M5117400ATS/ALTS-8 300-mil m51174 m5117400 M511740

    HYB514100BJ-70

    Abstract: L-SIM-30-1 hyb 511
    Text: Summary of Types SIEM ENS Summary of Types Type Ordering Code Package Description Q67100-Q512 Q67100-Q427 Q67100-Q428 Q67100-Q518 067100-0519 Q67100-Q520 Q67100-Q521 Q67100-Q522 Q67100-Q523 Q67100-Q524 Q67100-Q525 Q67100-Q526 Q67100-Q527 Q67100-Q528 Q67100-Q529


    OCR Scan     		PDF 511000B-60 5110OOB-70 511000B-80 511000BJ-6Q 511000BJ-70 5110Q0BJ-80 511000BZ-60 511000BZ-70 511000BZ-80 511000BL-60 HYB514100BJ-70 L-SIM-30-1 hyb 511

    Q67100-Q765

    Abstract: 32200S-70 Q67100-Q470 94500S-70 514256B-80 Q67100-Q840 Q67100-Q914 Q67100-Q437 322120S-70
    Text: SIEM EN S Summary of Types in Alphanumerical Order Summary of Types in Alphanumerical Order Type Ordering Code Page Q67100-Q512 Q67100-Q427 Q67100-Q428 Q67100-Q518 Q67100-Q519 Q67100-Q520 Q67100-Q526 Q67100-Q527 Q67100-Q524 Q67100-Q525 Q67100-Q521 Q67100-Q522


    OCR Scan     		PDF 511000B-60 511000B-70 511000B-80 511000BJ-60 511000BJ-70 51100QBJ-80 511000BJL-6Q 511000BJL-70 511000BL-60 511000BL-70 Q67100-Q765 32200S-70 Q67100-Q470 94500S-70 514256B-80 Q67100-Q840 Q67100-Q914 Q67100-Q437 322120S-70

    Untitled

    Abstract: No abstract text available
    Text: HB56D473EJ Series 4,194,304-word x Preliminary 72-bit High Density Dynamic RAM Module The H B 56D 473EJ belongs to 8 byte DIM M Dual In -lin e M em ory M o d u le fam ily , and has been developed as an optim ized m ain m em ory solution for 4 and 8 Byte processor applications.


    OCR Scan     		PDF HB56D473EJ 304-word 72-bit 473EJ 117400A T16244A 168-pin highcpA18.