IBM0418A41NLAB
Abstract: IBM0418A81NLAB IBM0436A41NLAB IBM0436A81NLAB
Text: IBM0436A41NLAB IBM0418A41NLAB IBM0418A81NLAB IBM0436A81NLAB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM . Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • Registered outputs • 30 Ω drivers
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IBM0436A41NLAB
IBM0418A41NLAB
IBM0418A81NLAB
IBM0436A81NLAB
256Kx36
512Kx18)
128Kx36
256Kx18)
crrL3325
IBM0418A41NLAB
IBM0436A81NLAB
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SAMSUNG MCP
Abstract: MCP MEMORY dQ8F SAMSUNG MCP Qualification Report MCP NAND SAMSUNG 256Mb mcp Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability UtRAM Density MCP Samsung SAMSUNG NOR Flash Qualification Report
Text: Preliminary MCP MEMORY KBC00B7A0M Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash Memory / 64M Bit (4Mx16) UtRAM / 64M Bit (4Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft.
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KBC00B7A0M
16Mx16)
4Mx16)
512Kx16)
100pF
111-Ball
SAMSUNG MCP
MCP MEMORY
dQ8F
SAMSUNG MCP Qualification Report
MCP NAND
SAMSUNG 256Mb mcp Qualification Reliability
SAMSUNG 256Mb NAND Flash Qualification Reliability
UtRAM Density
MCP Samsung
SAMSUNG NOR Flash Qualification Report
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14Q7
Abstract: No abstract text available
Text: K3P4C1000D-D G C CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 Words / 8 bytes page access
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K3P4C1000D-D
/512Kx16)
100ns
K3P4C1000D-DC
42-DIP-600
K3P4C1000D-GC
44-SOP-600
K3P4C1000DD
14Q7
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IBM0418A8ACLAB
Abstract: IBM0436A4ACLAB IBM0436A8ACLAB IBM0418A4ACLAB
Text: . IBM0418A4ACLAB IBM0436A8ACLAB Preliminary IBM0418A8ACLAB IBM0436A4ACLAB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • 0.25 Micron CMOS technology
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IBM0418A4ACLAB
IBM0436A8ACLAB
IBM0418A8ACLAB
IBM0436A4ACLAB
256Kx36
512Kx18)
128Kx36
256Kx18)
crlh3320
IBM0418A8ACLAB
IBM0436A4ACLAB
IBM0436A8ACLAB
IBM0418A4ACLAB
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K7D803671B-HC33
Abstract: K7D803671B-HC30 K7D801871B-HC35 K7D801871B-HC37 K7D803671B K7D803671B-HC25 K7D803671B-HC35 K7D803671B-HC37
Text: K7D803671B K7D801871B 256Kx36 & 512Kx18 SRAM Document Title 8M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 -Initial document. July. 2000 Advance Rev. 0.1 -ZQ tolerance changed from 10% to 15% Aug. 2000 Advance Rev. 0.2
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K7D803671B
K7D801871B
256Kx36
512Kx18
-HC16
012MAX
K7D803671B-HC33
K7D803671B-HC30
K7D801871B-HC35
K7D801871B-HC37
K7D803671B
K7D803671B-HC25
K7D803671B-HC35
K7D803671B-HC37
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K7B801825B
Abstract: K7B803625B
Text: K7B803625B K7B801825B 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft May. 18 . 2001 Preliminary 0.1 Add x32 org part and industrial temperature part
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K7B803625B
K7B801825B
256Kx36
512Kx18
512Kx18-Bit
119BGA
225MHz
K7B801825B
K7B803625B
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IBM0418A4ANLAB
Abstract: IBM0418A8ANLAB IBM0436A4ANLAB IBM0436A8ANLAB
Text: . Preliminary IBM0418A4ANLAB IBM0418A8ANLAB IBM0436A8ANLAB IBM0436A4ANLAB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • 0.25µ CMOS technology • Synchronous Register-Latch Mode of Operation
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IBM0418A4ANLAB
IBM0418A8ANLAB
IBM0436A8ANLAB
IBM0436A4ANLAB
256Kx36
512Kx18)
128Kx36
256Kx18)
crlL3325
IBM0418A8ANLAB
IBM0436A4ANLAB
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IBM0418A41XLAB
Abstract: IBM0418A81XLAB IBM0436A41XLAB IBM0436A81XLAB
Text: . Preliminary IBM0418A81XLAB IBM0436A81XLAB IBM0418A41XLAB IBM0436A41XLAB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • 0.25 Micron CMOS technology
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IBM0418A81XLAB
IBM0436A81XLAB
IBM0418A41XLAB
IBM0436A41XLAB
256Kx36
512Kx18)
128Kx36
256Kx18)
crrh2516
IBM0418A41XLAB
IBM0418A81XLAB
IBM0436A41XLAB
IBM0436A81XLAB
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29F800T
Abstract: 7D000H-7DFFFH SA13 MX29F800T SA10 SA11 SA12
Text: PRELIMINARY MX29F800T/B 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY FEATURES • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption
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MX29F800T/B
1Mx8/512Kx16]
70/90/120ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
JUN/08/2000
DEC/04/2000
FEB/12/2001
29F800T
7D000H-7DFFFH
SA13
MX29F800T
SA10
SA11
SA12
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cmos static ram 1mx8 5v
Abstract: No abstract text available
Text: K5P6480YCM - T085 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8 Nand Flash Memory / 8M Bit (1Mx8/512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Nov. 19th 2000 Advanced Information 0.1 -Changed Operating Voltage from 2.4V - 3.0V to 2.7V - 3.3V
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K5P6480YCM
1Mx8/512Kx16)
K5P6480TCM-T085
K5P6480YCM-T085
69-Ball
08MAX
cmos static ram 1mx8 5v
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K7A801801B
Abstract: K7A803201B K7A803601B
Text: K7A803601B K7A803201B K7A801801B PRELIMINARY 256Kx36 & 256Kx32 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 History Draft Date Remark Initial draft 1. Delete pass- through
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K7A803601B
K7A803201B
K7A801801B
256Kx36
256Kx32
512Kx18
512Kx18-Bit
K7A801801B
K7A803201B
K7A803601B
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K7P801866M
Abstract: SA12 SA13
Text: K7P803666M K7P801866M 256Kx36 & 512Kx18 SRAM Document Title 256Kx36 & 512Kx18 Synchronous Pipelined SRAM Revision History Rev. No. History Draft Date Remark Rev. 0.0 Rev. 1.0 - Preliminary specification release - Final specification release Mar. 1999 Nov. 1999
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K7P803666M
K7P801866M
256Kx36
512Kx18
K7P80186SRAM
K7P801866M
SA12
SA13
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Untitled
Abstract: No abstract text available
Text: WE512K16-XG4X 512Kx16 CMOS EEPROM MODULE FEATURES Access Time of 140, 150, 200ns Page Write Cycle Time: 10ms Max Packaging: Data Polling for End of Write Detection Hardware and Software Data Protection • 68 lead, 40mm Hermetic CQFP Package 501
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WE512K16-XG4X
512Kx16
200ns
128Kx16
MIL-STD-883
MIL-PRF-38534
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Untitled
Abstract: No abstract text available
Text: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES Access Times of 35ns (SRAM) and 90ns (FLASH) 100,000 Erase/Program Cycles Minimum Access Times of 70ns (SRAM) and 120ns (FLASH) Sector Architecture
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WSF512K16-XXX
512KX16
120ns
ICCx16
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Untitled
Abstract: No abstract text available
Text: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES Access Times of 35ns (SRAM) and 90ns (FLASH) 100,000 Erase/Program Cycles Minimum Access Times of 70ns (SRAM) and 120ns (FLASH) Sector Architecture
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WSF512K16-XXX
512KX16
120ns
ICCx16
MIL-STD-883
MIL-PRF-38534
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Untitled
Abstract: No abstract text available
Text: ADVANCE 512K x 18 2.5V VDD, HSTL, QDRb4 SRAM 9Mb QDR SRAM MT54V512H18E 4-Word Burst FEATURES • 9Mb Density 512Kx18 • Separate independent read and write data ports with concurrent transactions • 100% bus utilization DDR READ and WRITE operation
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MT54V512H18E
512Kx18)
MT54V512H18E
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direct rdram rambus 1200
Abstract: No abstract text available
Text: 800/1066/1200 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high
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600MHz
DL-0118-07
direct rdram rambus 1200
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K7M801825B
Abstract: K7M803625B
Text: K7M803625B K7M801825B Preliminary 256Kx36 & 512Kx18 Flow-Through NtRAMTM Document Title 256Kx36 & 512Kx18-Bit Flow Through NtRAM TM Revision History Rev. No. 0.0 History Draft Date Remark 1. Initial document. May. 18. 2001 Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
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K7M803625B
K7M801825B
256Kx36
512Kx18
512Kx18-Bit
K7M801825B
K7M803625B
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da53
Abstract: DB26 0195c Outline T39
Text: 1066 MHz RDRAMâ 256/288 Mb 512Kx16/18x32s Advance Information Overview • The Rambusâ DRAM (RDRAMâ) device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other
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512Kx16/18x32s)
600MHz
DL-0118-010
da53
DB26
0195c
Outline T39
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FM23MLD16
Abstract: 3.3v 1Mx8 static ram high speed
Text: Preliminary FM23MLD16 8Mbit F-RAM Memory Features 8Mbit Ferroelectric Nonvolatile RAM • Organized as 512Kx16 Configurable as 1Mx8 Using /UB, /LB High Endurance 100 Trillion 1014 Read/Writes NoDelay Writes Page Mode Operation to 33MHz
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FM23MLD16
512Kx16
33MHz
512Kx16
FM23MLD16,
C8556953BG1,
FM23MLD16-60-BG
C8556953BG1
FM23MLD16
3.3v 1Mx8 static ram high speed
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KM23V8100D
Abstract: KM23V8100DET KM23V8100DT
Text: CM OS M ASK ROM KM23V81 OOD E T 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES G ENERAL DESCRIPTION • S w itc h a b le o rg a n iz a tio n 1 ,0 4 8 ,5 7 6 x 8 (b y te m o d e ) 5 2 4 ,2 8 8 x 16 (w ord m o de) • F a st a c c e s s tim e : 3 .3 V o p e ra tio n : 1 0 0 n s (M a x .)
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KM23V81
/512Kx16)
100ns
120ns
KM23V8100D
44-TSQP2-400
KM23V8100DET
KM23V8100DT
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Untitled
Abstract: No abstract text available
Text: A Advance information •■ AS29LV800 3V 1MX8/512KX16 CMOS Flash EEPROM Features • Organization: 1Mx 8/512K x 16 • Scctor architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture—T top or B (bottom)
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AS29LV800
1MX8/512KX16
8/512K
64Kbyte
32Kword
write/S29LV800T-120SI
AS29LV800T-150SC
AS29LV800T-150SI
AS29IV800B-80SC
AS29D/800B-80SI
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Untitled
Abstract: No abstract text available
Text: a WHITE /MICROELECTRONICS WSF512K16-XXX 512Kx16SRAM /FLASH MODULE, S M D 5962-96901 FEATURES FLASH M EM ORY FEATURES • A ccess Tim es of 35ns S R A M and 90ns (FLASH) ■ 10,000 E rase/Program Cycles ■ A ccess Tim es of 70ns (SRAM) and 120ns (FLASH)
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WSF512K16-XXX
512Kx16SRAM
120ns
120ns
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FD11O
Abstract: No abstract text available
Text: YZÀ WSF512K16-XXX I/WHITE / M I C R O E L E C T R O N I C S 512Kx16 SRAM/FLASH MODULE P R E L IM IN A R Y • FEATURES FLASH MEMORY FEATURES • A ccess Tim es of 35nS S R A M and 90nS (FLASH) ■ 10,000 Erase/Program Cycles ■ A ccess Tim es of 70nS (SR A M ) and 120nS (FLASH)
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WSF512K16-XXX
512Kx16
120nS
66-pin,
120nS
FD11O
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