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    Untitled

    Abstract: No abstract text available
    Text: SM33216 January 1993 Rev 0 SMART Modular Technologies SM33216 512KBit 16K x 32 CMOS Fast SRAM Module General Description Features The SM33216 is a high performance, 512kilobit static RAM module organized as 16K words by 32 bits, in a 64-pin, single-in-line memory module (SIMM) package.


    Original     		PDF SM33216 512KBit 512kilobit 64-pin, 16Kx4 512Kbit

    fm25v05-g

    Abstract: FM25V05 fm25v05g
    Text: FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V05 512Kb FM25VN05) FM25V05-G FM25VN05-G FM25V05-GTR FM25VN05-GTR FM25V05 fm25v05g

    FM24C512

    Abstract: FM24C512-G FM24V05
    Text: FM24C512 512Kb FRAM Serial Memory Features 512Kbit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM24C512 512Kb 512Kbit FM24C512 512-kilobit FM24C512, FM24C512-G A60003G1 FM24V05 FM24C512-G

    RG5L51

    Abstract: FM25L512 FM25L512-DG
    Text: Preliminary FM25L512 512Kb FRAM Serial 3V Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25L512 512Kb FM25L512, RG5L51 RG5L51 FM25L512 FM25L512-DG

    AT17C512A

    Abstract: AT17A AT17C010A AT17LV512A AT24CXXX ATDH2200E ATDH2225 pdip 24 altera EPC1 ordering AT17C512A-10JI
    Text: Features • Serial EEPROM Family for Configuring Altera FLEX Devices • Simple Interface to SRAM FPGAs • EE Programmable 512-Kbit and 1-Mbit Serial Memories Designed to Store Configuration Programs for Field Programmable Gate Arrays FPGAs • Cascadable Read Back to Support Additional Configurations or Future


    Original     		PDF 512-Kbit AT24CXXX 0974E 08/01/xM AT17C512A AT17A AT17C010A AT17LV512A ATDH2200E ATDH2225 pdip 24 altera EPC1 ordering AT17C512A-10JI

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 64K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V05 512Kb FM25VN05) FM25V05, 340282A, 25V05 A6340282A RIC0824 25VN05

    FM25V05

    Abstract: FM25V05-G
    Text: Preliminary FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 64K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V05 512Kb FM25VN05) 25VN05 A6340282A RIC0824 FM25V05 FM25V05-G FM25VN05-G FM25V05-G

    RG5L51

    Abstract: No abstract text available
    Text: Pre-Production FM25L512 512Kb F-RAM Serial 3V Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25L512 512Kb FM25V05 RG5L51

    PC44

    Abstract: SO20 VQ44 XC17V00 XC18V00 XC2VP20 XC2VP30 XC2VP40
    Text: XC18V00 Series In-System Programmable Configuration PROMs R DS026 v5.0 April 5, 2004 Features • Product Specification • Dual configuration modes - Serial Slow/Fast configuration (up to 33 MHz) - Parallel (up to 264 Mb/s at 33 MHz) In-system programmable 3.3V PROMs for


    Original     		PDF XC18V00 DS026 XC18V04 XC18V02, XC18V01 XC18V512, PC44 SO20 VQ44 XC17V00 XC2VP20 XC2VP30 XC2VP40

    echelon FT-x3

    Abstract: 14255R-100 14235R-500 echelon FT-x1 echelon FT-x2 14235R-2000 FT-x3 transformer echelon FT-x3 TRANSFORMER 14255r FT-X3 14255R-100
    Text: The FT 5000 Smart Transceiver is our next-generation chip for smart networks. It is the key product in the LONWORKS 2.0 platform — the next generation of LONWORKS products designed to greatly increase the power and capability of LONWORKS enabled devices, while


    Original     		PDF 14235R-2000 14235R-500 14255R-100 003-0457-01G echelon FT-x3 14255R-100 echelon FT-x1 echelon FT-x2 FT-x3 transformer echelon FT-x3 TRANSFORMER 14255r FT-X3 14255R-100

    14255R-400

    Abstract: 14235R-2000 FT-x3 transformer echelon FT-x3 14255R echelon FT-x2 003-0457-01C spi eeprom flash programmer schematic neuron 5000 echelon FT-x1
    Text: The FT 5000 Smart Transceiver is our next-generation chip for smart networks. It’s also a key product in the LONWORKS 2.0 platform — the next generation of LONWORKS products designed to greatly increase the power and capability of LONWORKS enabled devices, all while


    Original     		PDF J-STD-020D 003-0457-01C 14255R-400 14235R-2000 FT-x3 transformer echelon FT-x3 14255R echelon FT-x2 003-0457-01C spi eeprom flash programmer schematic neuron 5000 echelon FT-x1

    echelon FT-x3

    Abstract: neuron 5000 14255R-400 abstract on mini ups system circuit design schematic diagram offline UPS EN14908 FT5000 EVB echelon FT-x2 HP8656B service manual 14235r
    Text: Series 5000 Chip Data Book 005-0199-01A Echelon, LONWORKS, LONMARK, LonTalk, Neuron, 3120, 3150, LNS, ShortStack, LonMaker, and the Echelon logo are trademarks of Echelon Corporation registered in the United States and other countries. 3170 and FTXL are trademarks of


    Original     		PDF 05-0199-01A TPT/XF-1250 echelon FT-x3 neuron 5000 14255R-400 abstract on mini ups system circuit design schematic diagram offline UPS EN14908 FT5000 EVB echelon FT-x2 HP8656B service manual 14235r

    Untitled

    Abstract: No abstract text available
    Text: Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible – Supports SPI Modes 0 and 3 • 70 MHz Maximum Operating Frequency – Clock-to-Output (tV) of 6 ns Maximum • Flexible, Optimized Erase Architecture for Code + Data Storage Applications


    Original     		PDF 32-Kbyte 128-Byte

    neuron 5000

    Abstract: EEPROM I2C neuron 5000 echelon FT-x3 FT-x3 transformer neuron 3120 EIA-481-B ATMEL 14305R-500 14305r 14305 Neuron 3150 programming
    Text: Combined with inexpensive serial memory, the Neuron 5000 Processor provides a lower-cost, higher-performance LONWORKS solution than those based on previous-generation Neuron 3120 and Neuron 3150® chips. Neuron® 5000 Processor The Next-generation Neuron Chip for


    Original     		PDF J-STD020D 14305R-2000 14305R-500 003-0458-1B neuron 5000 EEPROM I2C neuron 5000 echelon FT-x3 FT-x3 transformer neuron 3120 EIA-481-B ATMEL 14305R-500 14305r 14305 Neuron 3150 programming

    FM24C512

    Abstract: FM24C512-G
    Text: Preliminary FM24C512 512Kb FRAM Serial Memory Features 512Kbit Ferroelectric Nonvolatile RAM Organized as 65,536 x 8 bits High Endurance 10 Billion 1010 Read/Writes 45 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface


    Original     		PDF FM24C512 512Kb 512Kbit FM24C512 512-kilobit FM24C512, FM24C512-G A60003G1 FM24C512-G

    Untitled

    Abstract: No abstract text available
    Text: FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V05 512Kb FM25VN05) FM25V05-G FM25VN05-G FM25V05-GTR FM25VN05-GTR

    Untitled

    Abstract: No abstract text available
    Text: 512KBit 16K x 32 General S M 33216 CMOS Fast SRAM Description Features The SM33216 is a high performance, 512kilobit static RAM module organized as 16K words by 32 bits, in a 64-pin, single-in-line memory module (SIMM) package. The module utilizes eight 16Kx4 high speed static RAM


    OCR Scan     		PDF 512KBit SM33216 512kilobit 64-pin, 16Kx4

    Untitled

    Abstract: No abstract text available
    Text: HN27512 Series Maintenance Only 512K 64K x 8-bit UV and OTP EPROM • DESCRIPTION The Hitachi HN27512 is a 512-Kilobit Ultraviolet Erasable and One-Time Programmable Electrically Programmable Read Only Memory organized as 65,536 x 8-bits. The HN27512 features low power dissipation and high speed


    OCR Scan     		PDF HN27512 512-Kilobit 28-pin ns/300 DG-28) DP-28)

    AP28F512-120

    Abstract: No abstract text available
    Text: 512K 64K X 8 A28F512 CMOS FLASH MEMORY (Automotive) Extended Automotive Temperature Range: -4 0 °C to +125°C Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 juts Typical Byte-Program — 1 Second Chip-Program


    OCR Scan     		PDF A28F512 32-LEAD AP28F512-150 AP28F512-120 AN28F512-150 AN28F512-120 EFt-20, ER-23, RR-60,

    28F512

    Abstract: 28F512 input id intel 28f512 80C186 N28F512 P28F512 80C186 programming
    Text: in te i 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 1 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp H igh-Perform ance Read


    OCR Scan     		PDF 28F512 28F512-120 ER-20, ER-24, RR-60, AP-316, AP-325 TP28F512-120, TN28F512-120 28F512 28F512 input id intel 28f512 80C186 N28F512 P28F512 80C186 programming

    a10hc

    Abstract: No abstract text available
    Text: HN27C512 Series Maintenance Only 512K 64K x 8-bit UV EPROM • DESCRIPTION The Hitachi HN27C512 is a 512-Kilobit Ultraviolet Erasable and Electrically Programmable Read Only Memory organized as 65,536 x 8-bits. The HN27C512 features fast address access times and low


    OCR Scan     		PDF HN27C512 512-Kilobit 28-pin ns/200 a10hc

    HN27C512G-17

    Abstract: SIERA
    Text: Maintenance Only HN27C512 Series 512K 64K x 8-bit UV EPROM • .DESCRIPTION The Hitachi HN27C512 is a 512-Kilobit Ultraviolet Erasable and Electrically Programmable Read Only Memory organized as 65,536 x 8-bits. The HN27C512 features fast address access times and low


    OCR Scan     		PDF HN27C512 512-Kilobit 28-pin ns/200 HN27C512G-17 SIERA

    Untitled

    Abstract: No abstract text available
    Text: ,iJL . r ’<*i SM23216Z Feb 1992 Rev 0 SMART Modular Technologies SM23216Z 512KBit 16Kx32) CMOS Fast SRAM Module General Description Features The SM23216Z is a high performance, 512-kilobit static RAM module organized as 16K words by 32 bits in a 64-pin ZIP memory module package. The module utilizes


    OCR Scan     		PDF SM23216Z 512KBit 16Kx32) 512-kilobit 64-pin 16Kx4

    Untitled

    Abstract: No abstract text available
    Text: In te l 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 /as Typical Byte-Program — 1 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read


    OCR Scan     		PDF 28F512 ER-20, ER-24, RR-60, AP-316, AP-325 TP28F512-120, TN28F512-120 4fl5bl75 D154flbb