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    Bimba Manufacturing Company SSFO-1251-2WX

    Cylinder, SS Flat-I, dbl act, ; 4In Bore ; Stroke: 1 Inch(s); Trunnion | Bimba SSFO-1251-2WX
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SSFO-1251-2WX Bulk 5 Weeks 1
    • 1 $938.97
    • 10 $938.97
    • 100 $938.97
    • 1000 $938.97
    • 10000 $938.97
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    512WX Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AK7754EN

    Abstract: No abstract text available
    Text: [AK7754] AK7754 Stereo CODEC + MIC/HP-AMP 内蔵 Audio DSP 概 要 AK7754は２つのオーディオI/Fマイク、ヘッドフォンアンプを内蔵したディジタルシグナルプロセッ サ DSP です。DSPは1536step (48kHzサンプリング時)の並列演算能力を持ち、当社で開発したハンズ


    Original     		PDF AK7754] AK7754 AK7754ã 1536step 48kHzã 96kbitã MS1138-J-02-PB AK7754EN

    SN74370

    Abstract: SN54187 SN5488A SN74187 SN7488A 88a1 S271 equivalent
    Text: TTL MEMORIES SERIES 54/74, 54S/74S READ-ONLY MEMORIES BULLETIN NO. DL•S 7512259, MAY 1975 Mask-Programmed Memories That Can Replace PROMs • Full On-Chip Decoding and Fast Chip Select s Simplify System Decoding • • All Schottky-Clamped ROMs Offer -Choice of 3-State or Open-Collector Outputs


    Original     		PDF 54S/74S SN5488A SN54187 SN54S270 SN7488A SN74187 SN74S270 SN74S371 SN74370 88a1 S271 equivalent

    ay-5-1012

    Abstract: ali m 3329 PROCESSOR ALI 3329 ali 3329 b ali 3329 SN74188 sn74s188 str 52100 SN7452 replacement of bel 187 transistor
    Text: GENERAL INFORMATION lie of Contents • Alphanumeric Index • Selection Guides • Glossary INTERCHANGEABiliTY GUIDE MOS MEMORIES TTL MEMORIES ECl MEMORIES MICROPROCESSOR SUMMARY 38510/MACH IV PROCUREMENT SPECIFICATION JAN Mll-M-38510 INTEGRATED CIRCUITS


    Original     		PDF 38510/MACH Mll-M-38510 Z501300 Z501200 Z501201 Z012510 ZOl1510 ay-5-1012 ali m 3329 PROCESSOR ALI 3329 ali 3329 b ali 3329 SN74188 sn74s188 str 52100 SN7452 replacement of bel 187 transistor

    AK7754

    Abstract: AK7754EN AKD7754 MPX16 32W1-2
    Text: [AK7754] AK7754 Stereo CODEC + MIC/HP-AMP 内蔵 Audio DSP 概 要 AK7754は２つのオーディオI/Fマイク、ヘッドフォンアンプを内蔵したディジタルシグナルプロセッ サ DSP です。DSPは1536step (48kHzサンプリング時)の並列演算能力を持ち、当社で開発したハンズ


    Original     		PDF AK7754] AK7754 AK7754I/F DSP1536step 48kHz) 96kbit 48pin 24-bit 24bit 1536step/fs AK7754 AK7754EN AKD7754 MPX16 32W1-2

    SN74S188

    Abstract: SN74S287 SN74188 SN74186 sn74S287 programming SN74S288 SN74S471 SN74188AJ SN74S470 SN74S471 16 pin
    Text: TTL MEMORIES SERIES 54/74. 54S/74S PROGRAMMABLE READ-ONLY MEMORIES BULLETIN NO. DL-S 7512258, MAY 1975 • Full Decoding and Chip Select Simplify System Design Titanium-Tungsten Ti-W Fuse Links for • Fast, Low-Voltage, Reliable Programming All Schottky-Clamped PROM's Offer:


    Original     		PDF 54S/74S SN54186 SN74S188 SN74S287 SN74188 SN74186 sn74S287 programming SN74S288 SN74S471 SN74188AJ SN74S470 SN74S471 16 pin

    PJ 0416 1v

    Abstract: til 3010 1208FRAM 7S5SG15
    Text: RAMTRON 4SE CORP D 7SSSG15 GGÜÜO^b 12D I RAH F M 1 2 0 8 F R A M M e m o ry r ^ lM T R O 4,096-Bit Nonvolatile Ferroelectric RAM Product Preview N Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512wx 8b ■ CMOS Technology with Integrated Ferroelectric


    OCR Scan     		PDF 7S5SG15 1208FRAMÂ 096-Bit 512wx8b 10-Year -150ns 300ns 250ns 24-Pin) PJ 0416 1v til 3010 1208FRAM

    Ferroelectric RAM

    Abstract: micron sram 5v 512*8
    Text: 2 4 19W F M 1 2 0 8 F R A M F ^ M M e m o ry 4,096-Bit Nonvolatile Ferroelectric RAM Product Preview T R O I M Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512wx 8b ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Symmetrical Operation with Two


    OCR Scan     		PDF 096-Bit 512wx8b 10-Year FM1208FRAMÂ 150ns 300ns 250ns 500ns 24-Pin) Ferroelectric RAM micron sram 5v 512*8

    FM24CO4

    Abstract: 24C04P FMZ4C04 24G04 24C04 xicor pin configurations of 24c04 1 FM24C04P
    Text: I FM24C04 FRAM Serial Memory 9 r ^ M T R Q N Product Preview Features • 4 ,096-Bit Nonvolatile Ferroelectric RAM Organized as 512wx8b ■ Very Low Power CMOS Technology - 100 JA Active (Read or Write - 25.uA Standby ■ Reliable Thin Film Ferroelectric Technology


    OCR Scan     		PDF FM24C04 096-Bit 512wx8b 24C04P FM24CO4 24C04P FMZ4C04 24G04 24C04 xicor pin configurations of 24c04 1 FM24C04P

    xicor X24C04

    Abstract: No abstract text available
    Text: FM24C04 FRAM Serial Memory r ^ M T R O N Product Specification Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512wx 8b ■ Very Low Power CMOS Technology - lOOpA Active Read or Write - 25pA Standby Over Commercial Temperature Range ■ Reliable Thin Film Ferroelectric Technology


    OCR Scan     		PDF FM24C04 096-Bit 512wx X24C04 FU24C04 24C04 75S5015 0GQD31A xicor X24C04

    pin configurations of 24c04 1

    Abstract: 24C04 xicor FM24C04 LSBP
    Text: FM24C04 FRAM Serial Memory F ^ M T R O IM Product Specification Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512wx 8b ■ Very Low Power CMOS Technology - lOOpA Active Read or Write - 25]iA Standby Over Commercial Temperature Range


    OCR Scan     		PDF FM24C04 096-Bit 512wx 24C04 75SS015 pin configurations of 24c04 1 24C04 xicor LSBP

    Untitled

    Abstract: No abstract text available
    Text: 2 4 19W FM 1208FRAM Memory r^ M T R O N 4,096-Bit Nonvolatile Ferroelectric RAM Product Preview Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512wx 8b ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Symmetrical Operation with Two


    OCR Scan     		PDF 1208FRAMÂ 096-Bit 512wx 10-Year 150ns 300ns 250ns 500ns 24-Pin)

    TOSHIBA TC160G

    Abstract: TC160G CH7E47 0.4mm pitch flip chip 256 pin toshiba graphics toshiba LGA Nand TC170C1 tc170c
    Text: TOSHIBA TC170C CMOS Standard Cell 0.7nm, 5.0V ASICs The 0.7nm, 5V TC170C allows higher area efficiency, system performance and device integration with lower power than previous generation 5V standard cell products Benefits • Advanced 0.7 micron CM O S process with fast 250ps gate


    OCR Scan     		PDF TC170C 250ps IS09000. Q0207 TOSHIBA TC160G TC160G CH7E47 0.4mm pitch flip chip 256 pin toshiba graphics toshiba LGA Nand TC170C1

    "24 pin" DRAM

    Abstract: mb81c1501
    Text: Section 3 Application Specific DRAM s — Page Devfc« Maximum Accesa Tima na 3-3 MB81461-12 -15 120 150 A t a Glance Capacity Package Options ORAM: 262144 bits (65536W x 4b) 1016 bits (256w x 4b) 24- pin Plastic DIP, ZIP SAM : 3-35 MB81461B-12 -15 120 150


    OCR Scan     		PDF MB81461-12 MB81461B-12 5536W 262144wx4b) 512wx4b) 262144wx 93760W 293760w "24 pin" DRAM mb81c1501

    intel 2102 Static RAM

    Abstract: M2102A 2107B-6 abb inverter manual acs 800 display 1602A M3101 D1 intel 8008 cpu LCD display 1602A
    Text: in t e l' d a t a c a t a l o g Intel Corporation 3065 Bowers Ave. Santa Clara, C A 95051 Tel: 408/246-7501, T W X: 910-338-0026, Telex: 34-6372 1. INDEXES & GENERAL INFORMATION contents Page 1. 2. Indexes and General Information . 1-1


    OCR Scan     		PDF 1024Hz intel 2102 Static RAM M2102A 2107B-6 abb inverter manual acs 800 display 1602A M3101 D1 intel 8008 cpu LCD display 1602A