Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS TM transistor Product specification October 1999 Philips Semiconductors N-channel logic level Product specification TrenchMOS(TM) FEATURES transistor SYMBOL PSMN005-55B;
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PSMN005-55B;
PSMN005-55P
603502/300/04/pp12
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SMD marking code 55B
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS TM transistor Product specification October 1999 Philips Semiconductors N-channel logic level Product specification TrenchMOS(TM) FEATURES transistor SYMBOL PSMN005-55B;
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PSMN005-55B;
PSMN005-55P
PSMN005-55P
SMD marking code 55B
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Untitled
Abstract: No abstract text available
Text: BUK754R0-55B; BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 03 — 24 January 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.
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BUK754R0-55B;
BUK764R0-55B
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BUK75
Abstract: BUK754R0-55B BUK764R0-55B
Text: BUK754R0-55B; BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 04 — 4 October 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.
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BUK754R0-55B;
BUK764R0-55B
BUK75
BUK754R0-55B
BUK764R0-55B
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PSMN005-55B
Abstract: PSMN005-55P
Text: Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN005-55B, PSMN005-55P FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance
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PSMN005-55B,
PSMN005-55P
PSMN005-55P
O220AB)
PSMN005-55B
OT404
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN005-55B, PSMN005-55P FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance
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PSMN005-55B,
PSMN005-55P
PSMN005-55P
O220AB)
PSMN005-55B
OT404
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Untitled
Abstract: No abstract text available
Text: BUK75/764R0-55B TrenchMOS standard level FET Rev. 02 — 30 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.
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BUK75/764R0-55B
BUK754R0-55B
O-220AB)
BUK764R0-55B
OT404
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Untitled
Abstract: No abstract text available
Text: BUK95/964R2-55B TrenchMOS logic level FET Rev. 02 — 8 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.
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BUK95/964R2-55B
BUK954R2-55B
O-220AB)
BUK964R2-55B
OT404
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7606
Abstract: 7606-55B BUK7506-55B BUK7606-55B
Text: BUK75/7606-55B TrenchMOS standard level FET Rev. 01 — 31 March 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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BUK75/7606-55B
BUK7506-55B
O-220AB)
BUK7606-55B
OT404
7606
7606-55B
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55b diode
Abstract: 7607-55B BUK7507-55B BUK7607-55B
Text: BUK75/7607-55B TrenchMOS standard level FET Rev. 01 — 15 May 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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BUK75/7607-55B
BUK7507-55B
O-220AB)
BUK7607-55B
OT404
55b diode
7607-55B
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BUK9E08-55b
Abstract: BUK9508-55B BUK9608-55B
Text: BUK95/96/9E08-55B TrenchMOS logic level FET Rev. 02 — 13 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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BUK95/96/9E08-55B
OT404,
OT226
BUK9E08-55b
BUK9508-55B
BUK9608-55B
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BUK9212-55B
Abstract: No abstract text available
Text: BUK9212-55B TrenchMOS logic level FET Rev. 02 — 12 December 2003 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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BUK9212-55B
M3D300
OT428
BUK9212-55B
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BUK7212-55B
Abstract: No abstract text available
Text: BUK7212-55B TrenchMOS standard level FET Rev. 01 — 23 January 2004 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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BUK7212-55B
M3D300
OT428
BUK7212-55B
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BUK7511-55B
Abstract: BUK7611-55B BUK7E11-55B buk7611
Text: BUK75/76/7E11-55B TrenchMOS standard level FET Rev. 02 — 11 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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BUK75/76/7E11-55B
OT404,
OT226
BUK7511-55B
BUK7611-55B
BUK7E11-55B
buk7611
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BUK9Y40-55B
Abstract: 03np80
Text: BUK9Y40-55B N-channel TrenchMOS logic level FET Rev. 01 — 28 May 2004 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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BUK9Y40-55B
M3D748
OT669
BUK9Y40-55B
03np80
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BUK954R2-55B
Abstract: BUK964R2-55B
Text: BUK95/964R2-55B TrenchMOS logic level FET Rev. 01 — 29 March 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using generation three TrenchMOS™ technology, featuring very low on-state resistance.
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BUK95/964R2-55B
BUK954R2-55B
O-220AB)
BUK964R2-55B
OT404
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BUK754R0-55B
Abstract: BUK764R0-55B
Text: BUK75/764R0-55B TrenchMOS standard level FET Rev. 01 — 28 March 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using generation three TrenchMOS™ technology, featuring very low on-state resistance.
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BUK75/764R0-55B
BUK754R0-55B
O-220AB)
BUK764R0-55B
OT404
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BUK7211-55B
Abstract: 03nl03 03nl06
Text: BUK7211-55B TrenchMOS standard level FET Rev. 01 — 12 December 2002 M3D300 Objective data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology, featuring very
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BUK7211-55B
M3D300
BUK7211-55B
OT428
03nl03
03nl06
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BUK9Y19-55B
Abstract: BUK9Y19-55B Rev. 02 BUK9Y19-55B,115
Text: BUK9Y19-55B N-channel TrenchMOS logic level FET Rev. 01 — 28 May 2004 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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BUK9Y19-55B
M3D748
OT669
BUK9Y19-55B
BUK9Y19-55B Rev. 02
BUK9Y19-55B,115
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D 795 A
Abstract: No abstract text available
Text: BUK95/96/9E06-55B TrenchMOS logic level FET Rev. 02 — 10 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology, featuring very low
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BUK95/96/9E06-55B
BUK9506-55B
O-220AB)
BUK9606-55B
OT404
BUK9E06-55B
OT226
D 795 A
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55b2
Abstract: No abstract text available
Text: BUK9Y40-55B N-channel TrenchMOS logic level FET Rev. 02 — 11 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology.
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BUK9Y40-55B
55b2
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55B2
Abstract: MBL798
Text: BUK9Y19-55B N-channel TrenchMOS logic level FET Rev. 02 — 11 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology.
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BUK9Y19-55B
55B2
MBL798
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PSMN005-55B, PSMN005-55P TrenchMOS transistor Logic level FET SYMBOL FEATURES • • • • • QUICK REFERENCE DATA VDSS = 55 V d ’Trench’ technology Very low on-state resistance Fast switching High thermal cycling performance
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PSMN005-55B,
PSMN005-55P
PSMN005-55P
T0220AB)
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Untitled
Abstract: No abstract text available
Text: 3UALITY T E CH N OL O GI E S CORP S7E ]> 74bbfl51 □□□430b 55b I ÖTY European “Pro Electron” Registered T y p e s _ CNY32 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e CNY32 is a gallium arsenide, in frared em itting d iode
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74bbfl51
CNY32
CNY32
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