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    600 V POWER SCHOTTKY SILICON CARBIDE DIODE Search Results

    600 V POWER SCHOTTKY SILICON CARBIDE DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    600 V POWER SCHOTTKY SILICON CARBIDE DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MSiCSS10060CC Compliant Silicon Carbide Dual Schottky Power Rectifier 10A, 600V DESCRIPTION This high current Silicon Carbide Schottky is rated up to 600 V and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to existing


    Original     		PDF MSiCSS10060CC T4-LDS-0106-1,

    Untitled

    Abstract: No abstract text available
    Text: MSiCSS10060CC Compliant Silicon Carbide Dual Schottky Power Rectifier 10A, 600V DESCRIPTION This high current Silicon Carbide Schottky is rated up to 600 V and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to existing


    Original     		PDF MSiCSS10060CC T4-LDS-0106-1,

    Untitled

    Abstract: No abstract text available
    Text: MSiCSS10060CC Compliant Silicon Carbide Dual Schottky Power Rectifier 10A, 600V DESCRIPTION This high current Silicon Carbide Schottky is rated up to 600 V and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to existing


    Original     		PDF MSiCSS10060CC T4-LDS-0106-1,

    Untitled

    Abstract: No abstract text available
    Text: STPSC1206 600 V power Schottky silicon carbide diode Features • No reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC boost diode Description K These diodes are manufactured using silicon carbide substrate. This wide bandgap material


    Original     		PDF STPSC1206

    STPSC1206D

    Abstract: STPSC1206 16288
    Text: STPSC1206 600 V power Schottky silicon carbide diode Features • No reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC boost diode Description A K These diodes are manufactured using silicon carbide substrate. This wide bandgap material


    Original     		PDF STPSC1206 STPSC1206D STPSC1206 16288

    Untitled

    Abstract: No abstract text available
    Text: MSiCSS10060 Compliant Silicon Carbide Schottky Power Rectifier 10A, 600V DESCRIPTION These high current Silicon Carbide Schottkys are rated up to 600 V and offer very fast switching capabilities with greater efficiency at higher operating temperatures compared to


    Original     		PDF MSiCSS10060 T4-LDS-0106-3,

    U4 Package

    Abstract: No abstract text available
    Text: MSiCSS10060 Compliant Silicon Carbide Schottky Power Rectifier 10A, 600V DESCRIPTION These high current Silicon Carbide Schottkys are rated up to 600 V and offer very fast switching capabilities with greater efficiency at higher operating temperatures compared to


    Original     		PDF MSiCSS10060 O-257 MSiCSN10060 T4-LDS-0106-3, U4 Package

    msc 0645

    Abstract: No abstract text available
    Text: MSiCSN10060 Silicon Carbide Schottky Power Rectifier 10A, 600V Available DESCRIPTION This 600 V rated SiC Schottky rectifier is in a hermetically sealed package and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to


    Original     		PDF MSiCSN10060 O-257 T4-LDS-0106-2, msc 0645

    msc 0645

    Abstract: No abstract text available
    Text: MSiCSN10060 Available Silicon Carbide Schottky Power Rectifier 10A, 600V DESCRIPTION This 600 V rated SiC Schottky rectifier is in a hermetically sealed package and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to


    Original     		PDF MSiCSN10060 O-257 pa30376) T4-LDS-0106-2, msc 0645

    Untitled

    Abstract: No abstract text available
    Text: MSiCSN10060 Available Silicon Carbide Schottky Power Rectifier 10A, 600V DESCRIPTION This 600 V rated SiC Schottky rectifier is in a hermetically sealed package and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to


    Original     		PDF MSiCSN10060 O-257 T4-LDS-0106-2,

    Untitled

    Abstract: No abstract text available
    Text: MSiCSN10060CC, CA, and D Available Silicon Carbide Dual Schottky Power Rectifier 10A, 600V DESCRIPTION These dual 600 V rated SiC Schottky rectifiers are in a hermetically sealed package with options for common cathode, common anode, and doubler configurations. They offer very


    Original     		PDF MSiCSN10060CC O-257 MSiCSS10060CC T4-LDS-0106,

    Untitled

    Abstract: No abstract text available
    Text: MSiCSN10060CC, CA, and D Available Silicon Carbide Dual Schottky Power Rectifier 10A, 600V ORDERABLE PART NUMBERS MSiCSN10060CC MSiCSN10060CA MSiCSN10060D Configuration Common Cathode Common Anode Doubler DESCRIPTION These dual 600 V rated SiC Schottky rectifiers are in a hermetically sealed package with


    Original     		PDF MSiCSN10060CC MSiCSN10060CA MSiCSN10060D O-257 T4-LDS-0106,

    msc 0645

    Abstract: No abstract text available
    Text: MSiCSN10060CC, CA, and D Available Silicon Carbide Dual Schottky Power Rectifier 10A, 600V DESCRIPTION These dual 600 V rated SiC Schottky rectifiers are in a hermetically sealed package with options for common cathode, common anode, and doubler configurations. They offer very


    Original     		PDF MSiCSN10060CC O-257 T4-LDS-0106, msc 0645

    STPSC1006D

    Abstract: JESD97
    Text: STPSC1006D 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power


    Original     		PDF STPSC1006D O-220AC STPSC100n STPSC1006D JESD97

    Untitled

    Abstract: No abstract text available
    Text: GB02SHT06-46 High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package •         RoHS Compliant 600 V Schottky rectifier 225 °C maximum operating temperature Zero reverse recovery charge Superior surge current capability


    Original     		PDF GB02SHT06-46 Mil-PRF-19500 GB02SHT06 57E-18 40E-05 12E-11 00E-10 00E-03

    STPSC1006D

    Abstract: No abstract text available
    Text: STPSC1006 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power


    Original     		PDF STPSC1006 O-220AC STPSC1006any STPSC1006D

    Untitled

    Abstract: No abstract text available
    Text: STPSC2006CW 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery A1 ■ Switching behavior independent of temperature A2 ■ Particularly suitable in PFC boost diode function K Description The SiC diode is an ultrahigh performance power


    Original     		PDF STPSC2006CW O-247

    STPSC806D

    Abstract: JESD97
    Text: STPSC806D 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power


    Original     		PDF STPSC806D O-220AC STPSC806D JESD97

    STPSC806

    Abstract: STPSC806D
    Text: STPSC806 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power


    Original     		PDF STPSC806 O-220AC STPSC806D STPSC806

    JESD97

    Abstract: STPSC1006D
    Text: STPSC1006D 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power


    Original     		PDF STPSC1006D O-220AC JESD97 STPSC1006D

    STPSC806D

    Abstract: st 393 JESD97
    Text: STPSC806D 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power


    Original     		PDF STPSC806D O-220AC STPSC806Dn STPSC806D st 393 JESD97

    Untitled

    Abstract: No abstract text available
    Text: STPSC606 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC boost diode K A K Description TO-220AC STPSC606D The SiC diode is an ultrahigh performance power


    Original     		PDF STPSC606 O-220AC STPSC606D STPSC606G

    Untitled

    Abstract: No abstract text available
    Text: STPSC806 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function K TO-220AC STPSC806D Description The SiC diode is an ultrahigh performance power


    Original     		PDF STPSC806 O-220AC STPSC806D

    STPSC1006D

    Abstract: STPSC1006G 16-2-87
    Text: STPSC1006 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A K TO-220AC STPSC1006D Description The SiC diode is an ultrahigh performance power


    Original     		PDF STPSC1006 O-220AC STPSC1006D STPSC1006D STPSC1006G 16-2-87