Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXXQ30N60B3M XPTTM 600V IGBT GenX3TM VCES = IC110 = VCE sat tfi(typ) = (Electrically Isolated Tab) 600V 19A 1.85V 125ns Extreme Light Punch Through IGBT for 5-30 kHz Switching OVERMOLDED (IXXQ.M) OUTLINE Symbol
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IXXQ30N60B3M
IC110
125ns
30N60B3D1
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75N60
Abstract: No abstract text available
Text: Preliminary Technical Information IXXH75N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR
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IXXH75N60B3D1
IC110
125ns
O-247
IF110
062in.
75N60B3
75N60
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH75N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR
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IC110
IXXH75N60B3D1
125ns
O-247
IF110
75N60B3
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IXXA50N60B3
Abstract: IXXH50N60B3 50N60B3D1
Text: Preliminary Technical Information 600V XPTTM IGBTs GenX3TM IXXA50N60B3 IXXP50N60B3 IXXH50N60B3 VCES = 600V IC110 = 50A VCE sat ≤ 1.80V TO-263 AA (IXXA) Extreme Light Punch Through IGBT for 5-30 kHz Switching G E C (Tab) TO-220AB (IXXP) Symbol Test Conditions
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IXXA50N60B3
IXXP50N60B3
IXXH50N60B3
IC110
O-263
IC110
50N60B3D1
IXXH50N60B3
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information 600V XPTTM IGBTs GenX3TM VCES = 600V IC110 = 50A VCE sat ≤ 1.80V IXXA50N60B3 IXXP50N60B3 IXXH50N60B3 TO-263 AA (IXXA) Extreme Light Punch Through IGBT for 5-30 kHz Switching G E C (Tab) TO-220AB (IXXP) Symbol Test Conditions
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IC110
IXXA50N60B3
IXXP50N60B3
IXXH50N60B3
O-263
O-220AB
50N60B3D1
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30N60B3D
Abstract: IXXH30N60B3 IXXH30N60
Text: Advance Technical Information IXXH30N60B3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 30A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXXH30N60B3
IC110
125ns
O-247
062in.
30N60B3D1
30N60B3D
IXXH30N60B3
IXXH30N60
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information XPTTM 600V GenX3TM w/ Diode MMIX1X100N60B3H1 Electrically Isolated Tab VCES = 600V IC90 = 60A VCE(sat) ≤ 1.80V Medium-Speed Low-Vsat PT IGBT for 10-30 kHz Switching C G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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MMIX1X100N60B3H1
0-06A
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Untitled
Abstract: No abstract text available
Text: XPTTM 600V IGBTs GenX3TM IXXA50N60B3 IXXP50N60B3 IXXH50N60B3 VCES = 600V IC110 = 50A VCE sat 1.80V TO-263 (IXXA) Extreme Light Punch Through IGBT for 5-30 kHz Switching G E C (Tab) TO-220 (IXXP) Symbol Test Conditions Maximum Ratings VCES VCGR
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IXXA50N60B3
IXXP50N60B3
IXXH50N60B3
IC110
O-263
O-220
50N60B3D1
3-13-A
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75N60B3D1
Abstract: IXXH75N60B3
Text: Advance Technical Information IXXH75N60B3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXXH75N60B3
IC110
125ns
O-247
062in.
75N60B3D1
IXXH75N60B3
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information XPTTM 600V GenX3TM w/ Diode MMIX1X100N60B3H1 Electrically Isolated Tab VCES = 600V IC90 = 60A VCE(sat) ≤ 1.80V Medium-Speed Low-Vsat PT IGBT for 10-30 kHz Switching C G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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MMIX1X100N60B3H1
0-06A
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75N60B3D1
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXXH75N60B3 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IC110
IXXH75N60B3
125ns
O-247
75N60B3D1
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IXXH50N60B3D1
Abstract: No abstract text available
Text: Advance Technical Information XPTTM IGBT 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH50N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 50A 1.80V 135ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IC110
IXXH50N60B3D1
135ns
O-247
IF110
50N60B3D1
IXXH50N60B3D1
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30N60B3D
Abstract: 30N60B3 IXXH30N60B3D1
Text: Advance Technical Information IXXH30N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 30A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXXH30N60B3D1
IC110
125ns
O-247
IF110
062in.
30N60B3D1
30N60B3D
30N60B3
IXXH30N60B3D1
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75N60B3
Abstract: IXXH75N60B3D1 75n60
Text: Advance Technical Information IXXH75N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXXH75N60B3D1
IC110
125ns
O-247
IF110
062in.
75N60B3
IXXH75N60B3D1
75n60
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IXXH30N60B3D1
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH30N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 30A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IC110
IXXH30N60B3D1
125ns
O-247
IF110
30N60B3D1
IXXH30N60B3D1
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IXXH50N60B3D1
Abstract: 50N60B3D1 18A100
Text: Advance Technical Information IXXH50N60B3D1 XPTTM IGBT 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 50A 1.80V 135ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXXH50N60B3D1
IC110
135ns
O-247
IF110
062in.
50N60B3D1
IXXH50N60B3D1
18A100
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet SGP20N60HS SGW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers:
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SGP20N60HS
SGW20N60HS
SGW20N60HS
O220AB
O-247AC
Q67040-S4498
Q67040-S4499
Jan-02
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Untitled
Abstract: No abstract text available
Text: SKB06N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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SKB06N60HS
K06N60HS
P-TO-263-3-2
Q67040S4544
P-TO-263-3-2
O-263AB)
SKB06N60HS
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K06N60
Abstract: No abstract text available
Text: SKB06N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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SKB06N60HS
K06N60HS
P-TO-220-3-45
SKB06N60HS
K06N60
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k20N60hs
Abstract: k20n60
Text: SKW20N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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SKW20N60HS
PG-TO-247-3-1
Q67040-S4502
PG-TO-247-3-1
O-247AC)
SKW20N60HS
k20N60hs
k20n60
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G15N60HS
Abstract: G15N60H
Text: SGB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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SGB15N60HS
PG-TO-263-3-2
O-263AB)
G15N60ces.
G15N60HS
G15N60H
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25E-4
Abstract: SKB06N60HS
Text: SKB06N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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SKB06N60HS
P-TO-263-3-2
O-263AB)
O-263AB
Q67040-S4544
Oct-02
25E-4
SKB06N60HS
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SKW30N60HS
Abstract: IGBT SKW30N60HS Q67040-S4503
Text: SKW30N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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SKW30N60HS
P-TO-247-3-1
O-247AC)
O-247AC
Q67040-S4503
May-03
SKW30N60HS
IGBT SKW30N60HS
Q67040-S4503
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SGB15N60HS
Abstract: S4535 Q67040-S4535
Text: Preliminary Datasheet SGB15N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation G E • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers:
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SGB15N60HS
O-263AB
Q67040-S4535
Jun-02
SGB15N60HS
S4535
Q67040-S4535
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