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    IXXH30N60 Search Results

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    IXXH30N60 Price and Stock

    IXYS Corporation IXXH30N60B3D1

    IGBT PT 600V 60A TO-247AD
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    DigiKey IXXH30N60B3D1 Tube 591 1
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    Mouser Electronics IXXH30N60B3D1 434
    • 1 $5.1
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    Verical IXXH30N60B3D1 73 8
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    Newark IXXH30N60B3D1 Bulk 142 1
    • 1 $5.3
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    TTI IXXH30N60B3D1 Tube 300 30
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    TME IXXH30N60B3D1 86 1
    • 1 $7.8
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    Vyrian IXXH30N60B3D1 309
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    IXYS Corporation IXXH30N60B3

    IGBT PT 600V 60A TO-247AD
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    Verical IXXH30N60B3 285 12
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    TTI IXXH30N60B3 Tube 300
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    TME IXXH30N60B3 1
    • 1 $5.86
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    IXYS Corporation IXXH30N60C3

    IGBT 600V 60A TO-247AD
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    DigiKey IXXH30N60C3 Tube 300
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    Mouser Electronics IXXH30N60C3
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    TTI IXXH30N60C3 Tube 50
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    IXYS Corporation IXXH30N60C3D1

    IGBT PT 600V 60A TO-247AD
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    DigiKey IXXH30N60C3D1 Tube 1
    • 1 $8.78
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    Mouser Electronics IXXH30N60C3D1
    • 1 $6.76
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    TTI IXXH30N60C3D1 Tube 300
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    TME IXXH30N60C3D1 1
    • 1 $6.46
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    • 100 $5.47
    • 1000 $4.19
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    Littelfuse Inc IXXH30N60C3D1

    Trans IGBT Chip N-CH 600V 60A 270W 3-Pin(3+Tab) TO-247AD
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    Arrow Electronics IXXH30N60C3D1 2 1
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    Newark IXXH30N60C3D1 Bulk 1
    • 1 $7.41
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    IXXH30N60 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXXH30N60B3 IXYS Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V TO247 Original PDF
    IXXH30N60B3D1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 270W TO247 Original PDF
    IXXH30N60C3D1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 270W TO247 Original PDF

    IXXH30N60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    30N60B3D

    Abstract: No abstract text available
    Text: IXXH30N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 5-30 kHz Switching 600V 30A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M


    Original     		IXXH30N60B3D1 IC110 125ns O-247 IF110 30N60B3D1 30N60B3D PDF

    IXXH30N60B3D1

    Abstract: No abstract text available
    Text: Advance Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH30N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 30A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IC110 IXXH30N60B3D1 125ns O-247 IF110 30N60B3D1 IXXH30N60B3D1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXXH30N60C3 XPTTM 600V IGBT GenX3TM VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching 600V 30A 2.2V 32ns TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IXXH30N60C3 IC110 O-247 30N60C3D1 PDF

    30N60B3D

    Abstract: 30N60B3 IXXH30N60B3D1
    Text: Advance Technical Information IXXH30N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 30A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IXXH30N60B3D1 IC110 125ns O-247 IF110 062in. 30N60B3D1 30N60B3D 30N60B3 IXXH30N60B3D1 PDF

    30N60C3D

    Abstract: 30N60C3D1 IXXH30N60 30N60C3 ixxh30n60c3d1
    Text: Advance Technical Information IXXH30N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 30A 2.2V 32ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IXXH30N60C3D1 IC110 O-247 IF110 062in. 30N60C3D1 30N60C3D IXXH30N60 30N60C3 ixxh30n60c3d1 PDF

    30N60B3D

    Abstract: IXXH30N60B3 IXXH30N60
    Text: Advance Technical Information IXXH30N60B3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 30A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IXXH30N60B3 IC110 125ns O-247 062in. 30N60B3D1 30N60B3D IXXH30N60B3 IXXH30N60 PDF

    30N60C3D

    Abstract: No abstract text available
    Text: Advance Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH30N60C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 30A 2.2V 32ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IC110 IXXH30N60C3D1 O-247 IF110 30N60C3D1 30N60C3D PDF

    Untitled

    Abstract: No abstract text available
    Text: IXXH30N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching 600V 30A 2.3V 32ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M


    Original     		IXXH30N60C3D1 IC110 O-247 IF110 30N60C3D1 PDF

    30N60B3D

    Abstract: No abstract text available
    Text: IXXH30N60B3 XPTTM 600V IGBT GenX3TM VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 5-30 kHz Switching 600V 30A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M


    Original     		IXXH30N60B3 IC110 125ns O-247 30N60B3D1 30N60B3D PDF