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    600V SILICON CARBIDE SCHOTTKY Search Results

    600V SILICON CARBIDE SCHOTTKY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    600V SILICON CARBIDE SCHOTTKY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SML10SIC06YC

    Abstract: No abstract text available
    Text: 600V COMMON CATHODE SILICON CARBIDE SiC SCHOTTKY DIODES SML10SIC06YIC • Hermetic Metal TO-257AA Package. • Semelab’s Silicon Carbide (SiC) Schottky diodes exhibit low forward voltage and superb high temperature performance. • Dual Common Cathode 600V SiC Diodes with Isolated Case


    Original     		SML10SIC06YIC O-257AA O-257AA SML10SIC06YC PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIDC02D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		SIDC02D60SIC2 Q67050-A4162sawn Q67050-A4162unsawn L4814A, PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIDC02D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		SIDC02D60SIC2 SIDC02D60SIC2 Q67050-A4162sawn Q67050-A4162unsawn L4814A, PDF

    L4804A

    Abstract: SDP04S60 SIDC01D60SIC2 SCHOTTKY 4A 600V
    Text: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		SIDC01D60SIC2 Q67050-A4161sawn Q67050-A4161unsawn L4804A, L4804A SDP04S60 SIDC01D60SIC2 SCHOTTKY 4A 600V PDF

    diode schottky 600v

    Abstract: 600V,4A DIODE Schottky diode Die SDP04S60 SIDC11D60SIC3 DSA0037454
    Text: SIDC11D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior


    Original     		SIDC11D60SIC3 Q67050-A4161A104 diode schottky 600v 600V,4A DIODE Schottky diode Die SDP04S60 SIDC11D60SIC3 DSA0037454 PDF

    SPD06S60

    Abstract: diode schottky 600v SIDC19D60SIC3 DIODE 200A 600V schottky DSA0037454
    Text: SIDC19D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior


    Original     		SIDC19D60SIC3 Q67050-A4162A104 SPD06S60 diode schottky 600v SIDC19D60SIC3 DIODE 200A 600V schottky DSA0037454 PDF

    DIODE 200A 600V schottky

    Abstract: SWITCHING DIODE 600V 2A SDP02S60 SDP02s L4834A SIDC00D60SIC2 600 V power Schottky silicon carbide diode
    Text: Final SIDC00D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		SIDC00D60SIC2 Q67050-A4201A101 Q67050-A4201A102 L4834A, DIODE 200A 600V schottky SWITCHING DIODE 600V 2A SDP02S60 SDP02s L4834A SIDC00D60SIC2 600 V power Schottky silicon carbide diode PDF

    600 V power Schottky silicon carbide diode

    Abstract: Schottky diode Die SDT02S60 SIDC05D60SIC3 DSA0037454
    Text: SIDC05D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior


    Original     		SIDC05D60SIC3 Q67050-A4201A103 600 V power Schottky silicon carbide diode Schottky diode Die SDT02S60 SIDC05D60SIC3 DSA0037454 PDF

    SDP02S60

    Abstract: SWITCHING DIODE 600V 2A A102 diode sdp02s
    Text: Preliminary SIDC00D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		SIDC00D60SIC2 SIDC00D60SIC2 Q67050-A4201sawn Q67050-A4201unsawn L4834A, SDP02S60 SWITCHING DIODE 600V 2A A102 diode sdp02s PDF

    SPD06S60

    Abstract: diode schottky 600v infineon SIDC02D60SIC2 Carbide Schottky Diode
    Text: Preliminary SIDC02D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		SIDC02D60SIC2 Q67050-A4162sawn Q67050-A4162unsawn L4814A, SPD06S60 diode schottky 600v infineon SIDC02D60SIC2 Carbide Schottky Diode PDF

    SDT05S60

    Abstract: SIDC16D60SIC3 C-19200 DSA0037454
    Text: SIDC16D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior


    Original     		SIDC16D60SIC3 Q67050-A4271A101 SDT05S60 SIDC16D60SIC3 C-19200 DSA0037454 PDF

    SCHOTTKY 4A 600V

    Abstract: DIODE 200A 600V schottky
    Text: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		SIDC01D60SIC2 SIDC01D60SIC2 Q67050-A4161sawn Q67050-A4161unsawn L4804A, SCHOTTKY 4A 600V DIODE 200A 600V schottky PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		SIDC01D60SIC2 Q67050-A4161sawn Q67050-A4161unsawn L4804A, PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		SIDC01D60SIC2 SIDC01D60SIC2 Q67050-A4161A1 Q67050-A4161A2 L4804A, PDF

    d06s60

    Abstract: D06S60C to220 pcb footprint smd diode marking code UJ T-1228 s4371 SDT06S60 SDB06S60 SDP06S60 AG Qc smd
    Text: SDP06S60, SDB06S60 SDT06S60 Preliminary data Silicon Carbide Schottky Diode  Worlds first 600V Schottky diode Product Summary  Revolutionary semiconductor V 600 VRRM material - Silicon Carbide  Switching behavior benchmark Qc 21 nC  No reverse recovery


    Original     		SDP06S60, SDB06S60 SDT06S60 P-TO220-2-21. P-TO220-3 P-TO220-3-1. SDP06S60 Q67040-S4371 D06S60 d06s60 D06S60C to220 pcb footprint smd diode marking code UJ T-1228 s4371 SDT06S60 SDB06S60 SDP06S60 AG Qc smd PDF

    d06s60

    Abstract: D06S60C smd diode marking code UJ T-1228 SDB06S60 SDP06S60 SDT06S60 d 132 smd diode diode smd marking code 435
    Text: SDP06S60, SDB06S60 SDT06S60 Preliminary data Silicon Carbide Schottky Diode  Worlds first 600V Schottky diode Product Summary V VRRM 600  Revolutionary semiconductor material - Silicon Carbide  Switching behavior benchmark Qc 21 nC  No reverse recovery


    Original     		SDP06S60, SDB06S60 SDT06S60 P-TO220-2-2. P-TO220-3 P-TO220-3-1. SDP06S60 Q67040-S4371 D06S60 d06s60 D06S60C smd diode marking code UJ T-1228 SDB06S60 SDP06S60 SDT06S60 d 132 smd diode diode smd marking code 435 PDF

    Untitled

    Abstract: No abstract text available
    Text: MSiCSS10060 Compliant Silicon Carbide Schottky Power Rectifier 10A, 600V DESCRIPTION These high current Silicon Carbide Schottkys are rated up to 600 V and offer very fast switching capabilities with greater efficiency at higher operating temperatures compared to


    Original     		MSiCSS10060 T4-LDS-0106-3, PDF

    Q67040-S4370

    Abstract: No abstract text available
    Text: SDP06S60 SDB06S60 Preliminary data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery IF


    Original     		SDP06S60 SDB06S60 P-TO220-3 P-TO220-3-1 Q67040-S4371 D06S60 Q67040-S4370 PDF

    P-TO252

    Abstract: D04S60 diode schottky 600v TO252 rthjc Q67040-S4368 Q67040-S4369 SDD04S60 SDP04S60 SDT04S60
    Text: SDP04S60, SDD04S60 SDT04S60 Preliminary data Silicon Carbide Schottky Diode  Worlds first 600V Schottky diode Product Summary  Revolutionary semiconductor V 600 VRRM material - Silicon Carbide  Switching behavior benchmark Qc 13 nC  No reverse recovery


    Original     		SDP04S60, SDD04S60 SDT04S60 P-TO220-2-21. P-TO252-3-1. P-TO220-3-1. SDP04S60 Q67040-S4369 D04S60 P-TO252 D04S60 diode schottky 600v TO252 rthjc Q67040-S4368 Q67040-S4369 SDD04S60 SDP04S60 SDT04S60 PDF

    to220 pcb footprint

    Abstract: D04S60 P-TO252 Schottky diode TO220 d 1398 infineon 6260 TO252-3 rthjc Q67040-S4368 Q67040-S4369 Q67040-S4445
    Text: SDP04S60, SDD04S60 SDT04S60 Final data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery


    Original     		SDP04S60, SDD04S60 SDT04S60 P-TO220-2-2. P-TO252-3-1. P-TO220-3-1. SDP04S60 Q67040-S4369 D04S60 to220 pcb footprint D04S60 P-TO252 Schottky diode TO220 d 1398 infineon 6260 TO252-3 rthjc Q67040-S4368 Q67040-S4369 Q67040-S4445 PDF

    U4 Package

    Abstract: No abstract text available
    Text: MSiCSS10060 Compliant Silicon Carbide Schottky Power Rectifier 10A, 600V DESCRIPTION These high current Silicon Carbide Schottkys are rated up to 600 V and offer very fast switching capabilities with greater efficiency at higher operating temperatures compared to


    Original     		MSiCSS10060 O-257 MSiCSN10060 T4-LDS-0106-3, U4 Package PDF

    D04S60

    Abstract: d04s6
    Text: SDP04S60, SDD04S60 SDT04S60 Preliminary data Silicon Carbide Schottky Diode  Worlds first 600V Schottky diode Product Summary V VRRM 600  Revolutionary semiconductor material - Silicon Carbide  Switching behavior benchmark Qc 13 nC  No reverse recovery


    Original     		SDP04S60, SDD04S60 SDT04S60 P-TO220-2-2. P-TO252-3-1. P-TO220-3-1. SDP04S60 D04S60 d04s6 PDF

    Untitled

    Abstract: No abstract text available
    Text: SDP04S60 SDD04S60 Preliminary data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery IF


    Original     		SDP04S60 SDD04S60 P-TO252-3-1 P-TO220-3-1 Q67040-S4369 D04S60 PDF

    Schottky diode TO220

    Abstract: DIODE 200A 600V schottky D05S60 diode schottky 600v Q67040S4644 SDT05S60 D05S
    Text: SDT05S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 14 nC • No reverse recovery


    Original     		SDT05S60 PG-TO220-2-2. D05S60 Q67040S4644 Schottky diode TO220 DIODE 200A 600V schottky D05S60 diode schottky 600v Q67040S4644 SDT05S60 D05S PDF