TA-2308
Abstract: CPH3405
Text: Ordering number:ENN6416 N-Channel Silicon MOSFET CPH3405 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2152A [CPH3405] 2.9 0.6 0.2 0.15 0.4 3 2 1 2.8 0.6 1.6 0.05
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ENN6416
CPH3405
CPH3405]
900mm2×
TA-2308
CPH3405
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PDF
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CPH6001
Abstract: No abstract text available
Text: Ordering number:ENN6132A NPN Epitaxial Planar Silicon Transistor CPH6001 High-Frequency Low-Noise Amplifier Applications Package Dimensions • High gain : S21e =11dB typ f=1GHz . · High cutoff frequency : fT=6.7GHz typ. · Small and slim 6-pin package.
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ENN6132A
CPH6001
800mW
CPH6001]
CPH6001
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PDF
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FTS2005
Abstract: S2005
Text: Ordering number:ENN6347 N-Channel Silicon MOSFET FTS2005 Liquid Crystal Display Backlight Drive Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Mounting height 1.1mm. unit:mm 2166 [FTS2005] 0.65 0.425 5 4.5 6.4
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ENN6347
FTS2005
FTS2005]
FTS2005
S2005
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PDF
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2SJ413
Abstract: tr1007 J413
Text: 2SJ413 Ordering number : EN5366B SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ413 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. Low-voltage drive. Micaless package facilitating mounting.
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2SJ413
EN5366B
2SJ413
tr1007
J413
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PDF
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marking DK
Abstract: 2SK2909 s 14-c-06 OP73
Text: Ordering number:ENN6312 N-Channel Silicon MOSFET 2SK2909 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2091A [2SK2909] 0.5 0.4 3 0.16 0.95 0.95 2 1.9 2.9 2.5 1 : Gate
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ENN6312
2SK2909
2SK2909]
marking DK
2SK2909
s 14-c-06
OP73
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PDF
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FW233
Abstract: W233
Text: Ordering number : ENN6391 SANYO Semiconductors DATA SHEET FW233 N-Channel Silicon MOSFET Load Switching Applications Features • Low ON resistance. · 4V drive. Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage
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Original
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ENN6391
FW233
1000mm2
FW233
W233
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PDF
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CPH6001
Abstract: No abstract text available
Text: Ordering number:ENN6132A NPN Epitaxial Planar Silicon Transistor CPH6001 High-Frequency Low-Noise Amplifier Applications Package Dimensions ⏐S21e⏐2=11dB • High gain : typ f=1GHz . · High cutoff frequency : fT=6.7GHz typ. · Small and slim 6-pin package.
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Original
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ENN6132A
CPH6001
S21e2
800mW
CPH6001]
CPH6001
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PDF
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CPH5608
Abstract: No abstract text available
Text: Ordering number:ENN6442A N-Channel Silicon MOSFET CPH5608 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2168 [CPH5608] 2.9 5 4 0.15 3 2.8 0.05 0.6 1.6 0.6 • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. · Composite type with 2 MOSFETs contained in a
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ENN6442A
CPH5608
CPH5608]
CPH5608
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PDF
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CPH3406
Abstract: No abstract text available
Text: Ordering number:ENN6417 N-Channel Silicon MOSFET CPH3406 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2152A [CPH3406] 2.9 0.6 0.2 0.15 0.4 3 2 1 2.8 0.6 1.6 0.05
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ENN6417
CPH3406
CPH3406]
900mm2
CPH3406
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PDF
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TA-2701
Abstract: No abstract text available
Text: Ordering number:ENN6363 N-Channel Silicon MOSFET 5HN02C Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2091A [5HN02C] 0.5 0.4 3 0.16 0.95 0.95 2 1.9 2.9 2.5 1 : Gate
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ENN6363
5HN02C
5HN02C]
TA-2701
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PDF
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marking S132
Abstract: FSS132 S132 TA2720
Text: Ordering number:ENN6398 P-Channel Silicon MOSFET FSS132 Load Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2116 [FSS132] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications 1.27
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ENN6398
FSS132
FSS132]
marking S132
FSS132
S132
TA2720
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PDF
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CPH6303
Abstract: ta2104
Text: Ordering number:ENN6395A P-Channel Silicon MOSFET CPH6303 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2151A [CPH6303] 5 4 0.6 6 0.2 0.15 2.9 2.8 0.6 1.6 0.05
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ENN6395A
CPH6303
CPH6303]
CPH6303
ta2104
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PDF
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TA-2309
Abstract: CPH3406 TF 2309 64172
Text: Ordering number:ENN6417 N-Channel Silicon MOSFET CPH3406 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2152A [CPH3406] 2.9 0.6 0.2 0.15 0.4 3 2 1 2.8 0.6 1.6 0.05
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ENN6417
CPH3406
CPH3406]
900mm2×
TA-2309
CPH3406
TF 2309
64172
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PDF
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2SA1973
Abstract: 2SC5310 ITR08234 ITR08235
Text: Ordering number:ENN5613 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1973/2SC5310 DC/DC Converter Applications Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching.
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ENN5613
2SA1973/2SC5310
2018B
2SA1973/2SC5310]
2SA1973
2SA1973
2SC5310
ITR08234
ITR08235
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PDF
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|
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2SJ418
Abstract: No abstract text available
Text: Ordering number:ENN5298A P-Channel Silicon MOSFET 2SJ418 Ultrahigh-Speed Switching Applications Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2083B [2SJ418] 2.3 5.5 1.5 6.5 5.0 4 0.5 7.0 Features 1.2 7.5 0.8 1.6
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ENN5298A
2SJ418
2083B
2SJ418]
2092B
2SJ418
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PDF
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2SA1973
Abstract: 2SA19 2SC5310 ITR08234 ITR08235 60100ts 2SC53
Text: Ordering number:ENN5613 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1973/2SC5310 DC/DC Converter Applications Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching.
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Original
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ENN5613
2SA1973/2SC5310
2018B
2SA1973/2SC5310]
2SA1973
2SA1973
2SA19
2SC5310
ITR08234
ITR08235
60100ts
2SC53
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PDF
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CPH3305
Abstract: No abstract text available
Text: Ordering number:ENN6426 P-Channel Silicon MOSFET CPH3305 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2152A [CPH3305] 2.9 0.6 0.2 0.15 0.4 3 2 1 2.8 0.6 1.6 0.05
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ENN6426
CPH3305
CPH3305]
900mm2×
CPH3305
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PDF
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TA-2661
Abstract: 63913 it-007 FW233 W233
Text: Ordering number:ENN6391 N-Channel Silicon MOSFET FW233 Load Switching Applications Features Package Dimensions • Low ON resistance. · 4V drive. unit:mm 2129 [FW233] 5 4 1.27 0.595 Specifications 0.43 0.1 1.5 5.0 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2
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ENN6391
FW233
FW233]
TA-2661
63913
it-007
FW233
W233
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PDF
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2SJ413
Abstract: No abstract text available
Text: Ordering number:ENN5366A P-Channel Silicon MOSFET 2SJ413 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2076B [2SJ413]
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ENN5366A
2SJ413
2076B
2SJ413]
2SJ413
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PDF
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CPH6303
Abstract: No abstract text available
Text: Ordering number:ENN6395A P-Channel Silicon MOSFET CPH6303 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2151A [CPH6303] 5 4 0.6 6 0.2 0.15 2.9 2.8 0.6 1.6 0.05
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Original
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ENN6395A
CPH6303
CPH6303]
CPH6303
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PDF
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2SK2909
Abstract: marking DK
Text: Ordering number:ENN6312 N-Channel Silicon MOSFET 2SK2909 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2091A [2SK2909] 0.5 0.4 3 0.16 0.95 0.95 2 1.9 2.9 2.5 1 : Gate
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ENN6312
2SK2909
2SK2909]
2SK2909
marking DK
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PDF
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2SJ418
Abstract: TA-2630
Text: Ordering number:ENN5298A P-Channel Silicon MOSFET 2SJ418 Ultrahigh-Speed Switching Applications Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2083B [2SJ418] 2.3 5.5 1.5 6.5 5.0 4 0.5 7.0 Features 1.2 7.5 0.8 1.6
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Original
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ENN5298A
2SJ418
2083B
2SJ418]
2092B
2SJ418
TA-2630
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PDF
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TA-2115
Abstract: FTS2011 TA2115
Text: Ordering number:ENN6355 N-Channel Silicon MOSFET FTS2011 Load Switching Applications Features Package Dimensions • Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. unit:mm 2147A [FTS2011] 0.65 5 4 Specifications 0.25 0.95 1 1 : Drain 2 : Source
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ENN6355
FTS2011
FTS2011]
TA-2115
FTS2011
TA2115
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PDF
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FTS2005
Abstract: S2005
Text: Ordering number:ENN6347 N-Channel Silicon MOSFET FTS2005 Liquid Crystal Display Backlight Drive Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Mounting height 1.1mm. unit:mm 2166 [FTS2005] 0.65 0.425 5 4.5 6.4
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Original
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ENN6347
FTS2005
FTS2005]
FTS2005
S2005
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PDF
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