2SB1324
Abstract: 2SD1998
Text: Ordering number:EN3130 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1324/2SD1998 Compact Motor Driver Applications Features Package Dimensions • Low saturation voltage. · Contains diode between collector and emitter. · Contains bias resistance between collector and
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EN3130
2SB1324/2SD1998
2SB1324/2SD1998]
2SB1324
2SB1324
2SD1998
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2SB1323
Abstract: 2SD1997
Text: Ordering number:EN3129 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1323/2SD1997 Compact Motor Driver Applications Features Package Dimensions • Contains input resistance R1 , base-to-emitter resistance (RBE). · Contains diode between collector and emitter.
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EN3129
2SB1323/2SD1997
2SB1323/2SD1997]
2SB1323
2SB1323
2SD1997
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2sb132
Abstract: 2A marking 2SB1324 2SD1998 ITR09586 ITR09587 ITR09588
Text: 2SB1324 / 2SD1998 Ordering number : EN3130A SANYO Semiconductors DATA SHEET 2SB1324 / 2SD1998 PNP / NPN Epitaxial Planar Silicon Transistors Compact Motor Driver Applications Features • • • • • Low saturation voltage. Contains diode between collector and emitter.
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2SB1324
2SD1998
EN3130A
2SB1324
2sb132
2A marking
2SD1998
ITR09586
ITR09587
ITR09588
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2sa172
Abstract: 2SA1728
Text: Ordering number:EN3132 PNP Epitaxial Planar Silicon Transistor 2SA1728 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET process. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small-sized package.
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EN3132
2SA1728
2SA1728]
2sa172
2SA1728
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2sa172
Abstract: 2SA1729
Text: 2SA1729 Ordering number : EN3133A SANYO Semiconductors DATA SHEET 2SA1729 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.
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2SA1729
EN3133A
250mm20
2sa172
2SA1729
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2SB1323
Abstract: 2SD1997 ITR09577 ITR09578
Text: 2SB1323 / 2SD1997 Ordering number : EN3129A SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB1323 / 2SD1997 Compact Motor Driver Applications Features • • • • • Contains input resistance R1 , base-to-emitter resistance (RBE).
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2SB1323
2SD1997
EN3129A
2SB1323
2SD1997
ITR09577
ITR09578
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2SA1729
Abstract: ITR04405 ITR04406 ITR04407 marking ag
Text: Ordering number:ENN3133 PNP Epitaxial Planar Silicon Transistor 2SA1729 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · High-speed switching.
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ENN3133
2SA1729
2SA1729]
25max
2SA1729
ITR04405
ITR04406
ITR04407
marking ag
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2SB1324
Abstract: 2SD1998 ITR09586 ITR09587 ITR09588 ITR09589
Text: Ordering number:ENN3130 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1324/2SD1998 Compact Motor Driver Applications Features Package Dimensions unit:mm 2038A [2SB1324/2SD1998] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Low saturation voltage. · Contains diode between collector and emitter.
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ENN3130
2SB1324/2SD1998
2SB1324/2SD1998]
25max
2SB1324
2SB1324
2SD1998
ITR09586
ITR09587
ITR09588
ITR09589
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PDF
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2SB1323
Abstract: 2SD1997 ITR09577 ITR09578 ITR09579 ITR09580
Text: Ordering number:ENN3129 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1323/2SD1997 Compact Motor Driver Applications Features Package Dimensions unit:mm 2038A [2SB1323/2SD1997] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Contains input resistance R1 , base-to-emitter
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ENN3129
2SB1323/2SD1997
2SB1323/2SD1997]
25max
2SB1323
2SB1323
2SD1997
ITR09577
ITR09578
ITR09579
ITR09580
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2SA1728
Abstract: ITR04396 ITR04397
Text: Ordering number:ENN3132 PNP Epitaxial Planar Silicon Transistor 2SA1728 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET process. · Low collector-to-emitter saturation voltage. · High-speed switching. · Small-sized package.
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ENN3132
2SA1728
2018B
2SA1728]
2SA1728
ITR04396
ITR04397
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2SK1332
Abstract: 2SK303
Text: Ordering number:EN3137 N-Channel Junction Silicon FET 2SK1332 Low-Frequency General-Purpose Amplifier Applications Package Dimensions unit:mm 2058 [2SK1332] 0.425 • Ideal for use in variable resistors, analog switches, low-frequency amplifiers, and constant-current
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EN3137
2SK1332
2SK1332]
2SK1332applied
2SK1332
2SK303
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2SA1729
Abstract: No abstract text available
Text: Ordering number:EN3133 PNP Epitaxial Planar Silicon Transistor 2SA1729 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed.
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EN3133
2SA1729
2SA1729]
2SA1729
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2SA1729
Abstract: No abstract text available
Text: Ordering n u m b e r:EN 3133 _ No.3133 2 S A 17 2 9 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications F e a tu re s • Adoption of FBET, MBIT processes •Large current capacity • Low collector-to-emitter saturation voltage
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2SA1729
250mm2
2SA1729
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A1728
Abstract: 2SA1728
Text: SA NY O S E M I C O N D U C T O R CO RP 22E » i m u i h .ooo?oae o $3132 F e a tu re s • Adoption of FBET process • Low collector-to-emitter saturation voltage • F ast switching speed • Small-sized package A bso lu te M axim um R a tin g s atT a= 25°C
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7clc1707b
DQ070aS
A1728
2SA1728
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transistor 2038
Abstract: 2SA1729 S60S6
Text: SANYO SEMICONDUCTOR CORP 22E D 7 T ci7Q7b Q0G70ñS b T-37-/5 2SA1729 % PNP Epitaxial Planar Silicon Transistor 20 3 8 High-Speed Switching Applications 3133 F eatures •Adoption of FBET, MBIT processes ■Large current capacity • Low collector-to-emitter saturation voltage
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2SA1729
-T-37-/Ã
250mm2
transistor 2038
2SA1729
S60S6
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Untitled
Abstract: No abstract text available
Text: O rdering num ber: E N 3 1 3 7 2SK1332 N o .3 1 3 7 N -C hannel Ju n ctio n Silicon FET Low-Frequency General-Purpose Amp Applications A p p lic a tio n s •Ideal for use in v ariable resistors, analog sw itches, low-frequency am plifiers, an d co n stan t-cu rren t
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OCR Scan
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2SK1332
2SK1332-applied
6089MO
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Untitled
Abstract: No abstract text available
Text: O rdering num ber: EN 3133 J 2SA1729 N o .3133 J SA \YO P N P E pitaxial P la n a r Silicon T ra n sisto r High-Speed Switching Applications F e a tu r e s • Adoption of FBET, MBIT processes •L arge c u rre n t capacity • Low collector-to-em itter sa tu ra tio n voltage
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2SA1729
6089MO
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3104j
Abstract: 2SB1324 2SD1998 2SD1 MARKING B
Text: ^ Ordering number: EN 3130 2SB1324/2SD1998 PNP/NPN Epitaxial P lanar Silicon Transistors Compact Motor Driver Applications F eatu res •Low saturation voltage • Contains diode between collector and emitter. • Contains bias resistance between collector and emitter.
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2SB1324/2SD1998
2SB1324
250mm2
3104j
2SD1998
2SD1 MARKING B
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2SK1332
Abstract: 2SK303
Text: O rdering num ber: EN3137 2SK1332 N-Channel Junction Silicon FET Low-Frequency General-Purpose Amp Applications A p p licatio n s - Ideal for use in variable resistors, analog switches, low-frequency amplifiers, and constant-current circuits. F e a tu re s
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OCR Scan
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EN3137
2SK1332
2SK1332-applied
2SK1332
2SK303
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PDF
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Untitled
Abstract: No abstract text available
Text: O rd e rin g n u m b e r: E N 3 1 3 2 2SA1728 No.3132 i S A \Y O PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • Adoption of FBBT process • Low collector-to-emitter saturation voltage •Fast switching speed • Snail-sized package
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OCR Scan
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2SA1728
2SA1728
-200mA
6089MO
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2SB1323
Abstract: 2SD1997
Text: O rdering num ber : EN3129 2SB1323/2SD1997 No.3129 PNP/NPN Epitaxial Planar Silicon Transistors Compact Motor Driver Applications F e a tu re s •Contains input resistance Rj , base-to-emitter resistance(RBE)• Contains diode between collector and emitter.
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OCR Scan
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EN3129
2SB1323/2SD1997
2SB1323
250mm2
2SD1997
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PDF
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ic sj 2038
Abstract: sj 2038
Text: O rd e rin g n u m b e r :EN 3 1 2 9 2SB1323/2SD1997 No. 3129 P N P /N P N E pitaxial P lanar Silicon T ransistors Compact Motor Driver Applications F eatu res Contains input resistance(Ri , base-to-emitter resistance(RBE)Contains diode between collector and em itter.
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OCR Scan
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2SB1323/2SD1997
2SB1323
250mm2
6089MO
2SD1997
ic sj 2038
sj 2038
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