6116 RAM
Abstract: ic 6116 TMM2016 6116 SRAM 6116 ram 6116 6116 memory 6116 CMOS RAM 6116 static RAM chip SY2128
Text: 2016/6116/9128 2K x 8 SRAM Page 1 of 5 2016/6116/9128 - 2048x8 bit Static RAM Description The 2016/6116 series of Static RAMs are 16,384 bit memories organized as 2,048 words by 8 bits and operates on a single +5V supply. 2016's and equivalents are generally NMOS or MOS
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2048x8
450ns
10-100mA
CY7C128
IDT6116A
V61C16
VT20C19
CXK5814P
TC2018
MCM2018A
6116 RAM
ic 6116
TMM2016
6116
SRAM 6116
ram 6116
6116 memory
6116 CMOS RAM
6116 static RAM chip
SY2128
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GR281
Abstract: 2716 eprom 4016 RAM 2716 eprom datasheet memory 2716 eprom 2716 pd446 static ram 4802 2716 2k eprom retention memory ram 6116
Text: GR281 2K x 8 NON-VOLATILE RAM GR281 (2K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR281 is a 2048 word by 8 bits (2K x 8) nonvolatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.
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GR281
GR281
2000/95/EC
2716 eprom
4016 RAM
2716 eprom datasheet
memory 2716
eprom 2716
pd446
static ram 4802
2716 2k eprom retention
memory ram 6116
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SR06
Abstract: V3089 6116LA25 DSC-3089/06
Text: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)
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20/25/35/45/55/70/90/120/150ns
20/25/35/45ns
15/20/25/35/45ns
24-pin
MIL-STD-833,
IDT6116SA
IDT6116LA
SR06
V3089
6116LA25
DSC-3089/06
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cd4060
Abstract: cd4060 crystal application CD4060 data CD4040 application circuit for CD4060 of CD4060 cmos 74C00 NAND IC2 CD4060 cd4060 application note IC2 CD4060 CURRENT TO VOLTAGE CONVERTER
Text: APPLICATION NOTE 24 TC7109 RECORDS REMOTE DATA AUTOMATICALLY TC7109 RECORDS REMOTE DATA AUTOMATICALLY By Wes AN-24 Freeman A TelCom Semiconductor analog-to-digital converter, a 2K-byte CMOS static RAM, and some gates and counters can be combined to form a low-cost, flexible, stand-alone
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TC7109
AN-24
13-bit
12bit
14-STAGE
cd4060
cd4060 crystal
application CD4060 data
CD4040
application circuit for CD4060
of CD4060
cmos 74C00 NAND
IC2 CD4060
cd4060 application note
IC2 CD4060 CURRENT TO VOLTAGE CONVERTER
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TC7660
Abstract: 200B DK-2750 IDT6116 PIC16C62A TC7109
Text: AN796 TC7109 Records Remote Data Automatically Author: Wes Freeman, Microchip Technology, Inc. INTRODUCTION A Microchip Technology analog-to-digital converter, a 2K-byte CMOS static RAM, and some gates and counters can be combined to form a low-cost, flexible, standalone data logging
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AN796
TC7109
13-bit
12-bit
D-81739
DS00796A*
DS00796A-page
TC7660
200B
DK-2750
IDT6116
PIC16C62A
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Untitled
Abstract: No abstract text available
Text: AN24 TC7109 Records Remote Data Automatically Author: Wes Freeman, Microchip Technology, Inc. INTRODUCTION A Microchip Technology analog-to-digital converter, a 2K-byte CMOS static RAM, and some gates and counters can be combined to form a low-cost, flexible, standalone data logging
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TC7109
PIC16C62A
DS00796A-page
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IDT6116LA
Abstract: IDT6116SA SO24-2
Text: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)
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IDT6116SA
IDT6116LA
20/25/35/45/55/70/90/120/150ns
20/25/35/45ns
15/20/25/35/45ns
24-pin
MIL-STD-833,
IDT6116LA
IDT6116SA
SO24-2
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7805CT
Abstract: MOC5010 ip1717 UA741CN op amp TL081P LM3524N LM13080N 7824ct LM7915CK LM7905CK
Text: Master Designer Version 8.5 Component Library Reference Volume 2 October 1995 All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted, in any form or by any means-electronic, mechanical, photocopying, recording, or otherwise-without the prior
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4464 ram
Abstract: us4k 74C930 6116 ram 2k 74c920 6508 ram 4464 memory 6164 memory
Text: In d u s try CMOS RAM C ross R eference H A R R IS C M O S R A M s F U J ID E SC RIPTIO N HARR IS AM O EDI rrsu H IT AC H I ID T M ITS U BISHI M OT O R O LA N AT IO N A L 6508 6508 74C 929 6518 6518 74C 930 NEC O KI H A R R IS / RCA TO SH IB A N M O S,
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8816H
4464 ram
us4k
74C930
6116 ram 2k
74c920
6508 ram
4464 memory
6164 memory
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Untitled
Abstract: No abstract text available
Text: March 1994 HM 6116 DATA SHEET 2 Kx 8 GENERAL PURPOSE CMOS SRAM FEATURES . . ACCESS TIME COMMERCIAL : 120 NS MAX INDUSTRIAL : 120 NS (MAX) MILITARY .120 NS (MAX) VERY LOW POWER CONSUMPTION ACTIVE : 240 mW (TYP) STANDBY: 2.0 (xW (TYP) DATA RETENTION : 4 (TYP)
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6116/Rev
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ES 61162
Abstract: No abstract text available
Text: h im HM 6116 DATA SHEET 2 Kx 8 GENERAL PURPOSE CMOS SRAM FEATURES 600 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPPLY EQUAL CYCLE AND ACCESS TIME NO CLOCK AND STROBES REQUIRED GATED INPUTS WIDE TEMPERATURE R ANG E: - 55 TO + 125°C
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Sflbfl45b
HM6116/Rev
ES 61162
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6116 block diagram
Abstract: No abstract text available
Text: Irillll I V i l l l September 1989 HM 6116 DATA SHEET_ 2kx8 GENERAL PURPOSE CMOS SRAM FEATURES TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPPLY EQUAL CYCLE AND ACCESS TIME NO CLOCK AND STROBES REQUIRED GATED INPUTS WIDE TEMPERATURE RANGE : - 55 TO + 125 C
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F12-H
F0F11
6116 block diagram
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6116 RAM
Abstract: 6116 6116 static ram SRAM 6116 ram 6116 6116 memory HM6116 6116 sram 6116 CMOS RAM decoder 6116
Text: Illiïü HM 6116 DATA SHEET_ 2 Kx 8 GENERAL PURPOSE CMOS SRAM FEATURES ACCESS TIME COMMERCIAL : 120 NS MAX INDUSTRIAL : 120 NS (MAX) MILITARY : 120 NS (MAX) VERY LOW POWER CONSUMPTION ACTIVE : 240 mW (TYP) STANDBY : 2.0 nW (TYP) DATA RETENTION : 4 fiW (TYP)
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6116/Rev
6116 RAM
6116
6116 static ram
SRAM 6116
ram 6116
6116 memory
HM6116
6116 sram
6116 CMOS RAM
decoder 6116
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6116 RAM
Abstract: SRAM 6116 6116 6116 memory chip diagram of ram chip 6116 6116 memory chip 6116 SRAM HM6116 ram 6116 6ll6
Text: h im HM 6116 DATA SHEET 2 Kx 8 GENERAL PURPOSE CMOS SRAM FEATURES 600 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPPLY EQUAL CYCLE AND ACCESS TIME NO CLOCK AND STROBES REQUIRED GATED INPUTS WIDE TEMPERATURE R ANG E: - 55 TO + 125°C
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6116/Rev
6116 RAM
SRAM 6116
6116
6116 memory
chip diagram of ram chip 6116
6116 memory chip
6116 SRAM
HM6116
ram 6116
6ll6
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HY6116-10
Abstract: HY6116 HY6116-12 HY6116-15 Hyundai Semiconductor
Text: HYUNDAI ELECTRONICS A3 dË| 4675088 HYUNDAI ELEC TR ON IC S MbTSOSÖ 0000003 E 83D 00083 ^ 4 6 -2 3 -1 2 jy rs i» « ' A ti t iR « L S jg g iy FEBRUARY 1986 FEATURES DESCRIPTION The HY6116 is a high speed, low power, 2048-word by 8-bit static CMOS RAM fabricated using highperformance CMOS process technology. This high
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t-46-23-12
HY6116
2048-word
HY6116-10
HY6116-12
HY6116-15
HY6116
100ns
120ns
150ns
HY6116-10
HY6116-12
HY6116-15
Hyundai Semiconductor
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CY6116-35
Abstract: 6116 RAM expansion circuit
Text: CY6116 CYPRESS SEMICONDUCTOR " 2,048 x 8 Static RAV RAM Features Functional Description • Automatic power-down when deselected The C Y 6116 is a high-perform ance CM O S Static RAM organized as 2048 w ords by 8 bits. Easy m em ory expansion is provided by
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CY6116
CY6116-35
6116 RAM expansion circuit
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Untitled
Abstract: No abstract text available
Text: RPR 2K x 8 NON-VOLATILE RAM MsmumnsusA • • • • • • • • • GR281 Has instant power circuit, does not require voltage slew Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Proram RAM
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GR281
24-pin
GR281
PD446,
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NVR2
Abstract: pd446
Text: GREENWICH 2K x 8 NON-VOLATILE RAM INSTRUMENTS LTD • • • • • • NVR2 Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Program RAM No limit to number of programming cycles Fits standard 24-pin socket
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24-pin
PD446
NVR2
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Untitled
Abstract: No abstract text available
Text: apR FAST ACCESS - 2K x 8 NON-VOLATILE RAM • • • • • • • GR281-4 Plug-in replacement for Static RAM 10 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programing cycles Standard 24-pin JEDEC pinout
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GR281-4
24-pin
GR281
PD446
GR281
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ram 8416
Abstract: No abstract text available
Text: FAST A C C E S S - 2K x 8 NON-VOLATILE RAM • • • • • • • GR281-4 Plug-in replacement for Static RAM 10 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programing cycles Standard 24-pin JEDEC pinout
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GR281-4
24-pin
GR281
PD446
ram 8416
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STATIC RAM 8464
Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
Text: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)
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L7C167
L7C168
L7C170
L7C171
L7C172
L6116/
L6116L
L7C183
CY7C183
L7C184
STATIC RAM 8464
IMS1433
SSM6116
IMS1630
SSM6171
SSM7188
hitachi selection guide
SSM7164
hm6264
ic 6116 ram
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HM1-65162
Abstract: HM165162883 hm165162 harris HM1-65162B-9 hm4 SMD hm465162c 8403603JA 8403602JA 8403606JA
Text: æ HM-65162 2K x 8 Asynchronous OMOS StStiC RAM January 1992 Features Description • Fast Access Time. 70/90ns Max The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Harris Advanced SAJI V
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HM-65162
HM-65162
HM1-65162
HM165162883
hm165162 harris
HM1-65162B-9
hm4 SMD
hm465162c
8403603JA
8403602JA
8403606JA
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Untitled
Abstract: No abstract text available
Text: HM-65162 ÌH HARRIS S E M I C O N D U C T O R 2K x 8 Asynchronous CMOS StdtlC RAM January 1992 Features Description • Fast Access Tim Max • Low Standby Current. 50nA Max
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HM-65162
70/90ns
HM-65162
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CY6116-55
Abstract: CY6116 CY6116-55DMB CY6116-55PC ram 16x8 CY6116-35LMB CY6116-55DC CY6116-35 STATIC RAM 16x8
Text: ss s,' -¡¡m qypRESS ~ SEMICONDUCTOR CY6116 • • 2,048 x 8 Static RAV RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • Highspeed — 35 us • Low active power — 660 mW • Low standby power
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TheCY6116
CY61J6
CY6116â
45DMB
45LMB
CY6116-55
CY6116
CY6116-55DMB
CY6116-55PC
ram 16x8
CY6116-35LMB
CY6116-55DC
CY6116-35
STATIC RAM 16x8
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