123401
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVEF29LV065U32SJ08-XX 32MB FLASH SIMM, based on AMD Am29LV065D Uniform Sector Flash Memory DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVEF29LV065U32SJ08-XX is a Flash Memory SIMM, composed of four 64Mbit CMOS flash memories, each organized as 8M X 8 bits mounted on a substrate
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AVEF29LV065U32SJ08-XX
Am29LV065D
AVEF29LV065U32SJ08-XX
64Mbit
80-pin
120ns
123401
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LH28F640BFHG-PBTL70A
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F640BFHG-PBTL70A Flash Memory 64Mbit 4Mbitx16 (Model Number: LHF64FH9) Spec. Issue Date: September 27, 2004 Spec No: FM045022A LHF64FH9 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,
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LH28F640BFHG-PBTL70A
64Mbit
4Mbitx16)
LHF64FH9)
FM045022A
LHF64FH9
LH28F640BFHG-PBTL70A
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Enhanced SDRAM
Abstract: No abstract text available
Text: 64Mbit – Enhanced SDRAM 8Mx8, 4Mx16 ESDRAM Preliminary Data Sheet Overview Features • • • • • • • • • • • • • • High Performance 166 MHz Superset to SDRAM 100% Pin Compatible with SDRAM 100% Function and Timing Compatible with JEDEC
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64Mbit
4Mx16
SM2603T-6
SM2604T-6
SM2603T-7
SM2604T-7
SM2603T-10
SM2604T-10
54-pin
Enhanced SDRAM
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SM2603
Abstract: No abstract text available
Text: 64Mbit - Enhanced SDRAM 8Mx8, 4Mx16 ESDRAM Product Brief Features • 100% Pin Compatible with SDRAM • 100% Function and Timing Compatible with JEDEC standard SDRAM • Integrated 16Kbit SRAM Row Cache • Four Bank Architecture • Synchronous Operation up to 166MHz
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64Mbit
4Mx16
16Kbit
166MHz
SM2603T-6
SM2604T-6
SM2603T-7
SM2604T-7
SM2603T-10
SM2604T-10
SM2603
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SM3603
Abstract: Enhanced Memory Systems 8mx8 SM3604T-7
Text: 64Mbit – High Speed SDRAM 8Mx8, 4Mx16 HSDRAM Data Sheet Features Description • • • • The Enhanced Memory Systems SM3603 and SM3604 HighSpeed SDRAM HSDRAM devices are high performance versions of the proposed JEDEC PC-133 SDRAM. While compatible with standard SDRAM, they provide the faster
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64Mbit
4Mx16
SM3603
SM3604
PC-133
SM3603T-7
54-pin
SM3604T-7
Enhanced Memory Systems
8mx8
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Untitled
Abstract: No abstract text available
Text: V54C365 16/80/40 4VE 64Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 4M X 16, 8M X 8, 16M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns
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V54C365
64Mbit
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Untitled
Abstract: No abstract text available
Text: V54C365 16/80/40 4VE 64Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 4M X 16, 8M X 8, 16M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns
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V54C365
64Mbit
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Untitled
Abstract: No abstract text available
Text: V54C365 16/80/40 4VE 64Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 4M X 16, 8M X 8, 16M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns
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V54C365
64Mbit
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Untitled
Abstract: No abstract text available
Text: HY51V S 64403HG/HGL 16M x 4Bit EDO DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 16,777,216 x 4 bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. Features are access time(45ns or 50ns) and refresh cycle(8K ref ) and power consumption
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HY51V
64403HG/HGL
64Mbit
400mil
32pin
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Untitled
Abstract: No abstract text available
Text: M25P64 64 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 64Mbit of Flash Memory 2.7 to 3.6V Single Supply Voltage SPI Bus Compatible Serial Interface 50MHz Clock Rate maximum
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M25P64
50MHz
64Mbit
512Kbit)
64Mbit)
2017h)
20-Year
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Untitled
Abstract: No abstract text available
Text: HY51V S 65163HG/HGL 4M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. Features are access time(45ns or 50ns) and refresh cycle(4K ref ) and power consumption (Normal
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HY51V
65163HG/HGL
16Bit
64Mbit
100us.
400mil
50pin
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Untitled
Abstract: No abstract text available
Text: K4S640832E CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S640832E CMOS SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM
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K4S640832E
64Mbit
K4S640832E
A10/AP
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Untitled
Abstract: No abstract text available
Text: HY51V64400HG 16M x 4Bit Fast Page DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 16,777,216 x 4 bit configuration with Fast Page mode CMOS DRAMs. Fage page mode offers high speed of random access memory within the same row. The
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HY51V64400HG
64Mbit
400mil
32pin
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BA102
Abstract: TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65
Text: TC58FVM6 T/B 2A (FT/XB) 65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT (8M x 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 × 8 bits or as 4194304 × 16 bits. The TC58FVM6T2A/B2A features commands for
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TC58FVM6
64MBIT
TC58FVM6T2A/B2A
67108864-bit,
BA102
TOSHIBA TC58 cmos memory -NAND
TC58
TC58FVM6B2A
TC58FVM6T2A
TC58FVM6T2AFT65
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Untitled
Abstract: No abstract text available
Text: TRAILING EDGE PRODUCT - MINIMUM ORDER APPLIES 8M x 8 SRAM MODULE SYS88000RKX - 70/85/10/12 Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear NE29 8SE, England Tel. +44 0191 2930500 Fax.+44 (0191) Issue 1.4 : January 1999 2590997 Description Features The SYS88000RKX is a plastic 64Mbit Static RAM
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SYS88000RKX
64Mbit
512Kx8
100ns
120ns
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74FCT245
Abstract: No abstract text available
Text: 8M x 8 SRAM MODULE SYS88000RKX - 70/85/10/12 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Issue 1.4 : January 1999 Description Features The SYS88000RKX is a plastic 64Mbit Static RAM Module housed in a standard 38 pin Single In-Line
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SYS88000RKX
64Mbit
512Kx8
100ns
120ns
74FCT245
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Untitled
Abstract: No abstract text available
Text: K4S641632E-TI P CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 January 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Jan. 2001 K4S641632E-TI(P) CMOS SDRAM Revision History
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K4S641632E-TI
64Mbit
16Bit
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512k x 8 chip block diagram
Abstract: 512K x 8 bit sram 32 pin 2M x 32 chip block diagram 512k x 8 SRAM
Text: 2M x 32 SRAM MODULE SYS322000ZK-015/020/025 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Description The SYS322000ZK is a plastic 64Mbit Static RAM Module offered in a low profile 72 pin ZIP package, organised as 2M x 32. The module
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SYS322000ZK-015/020/025
SYS322000ZK
64Mbit
SYS322000ZKI-15
512k x 8 chip block diagram
512K x 8 bit sram 32 pin
2M x 32 chip block diagram
512k x 8 SRAM
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IS66WVE4M16ALL-70TLI
Abstract: No abstract text available
Text: IS66WVE4M16ALL Advanced Information 1.8V Core Async/Page PSRAM Overview The IS66WVE4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several
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IS66WVE4M16ALL
IS66WVE4M16ALL
64Mbit
IntrapaWVE4M16ALL-70TLI
48-ball
48-pin
MO-207
IS66WVE4M16ALL-70TLI
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LH28F640BFHE-PtTL70
Abstract: LH28F640BFHE-PTTL70A
Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F640BFHE-PTTL70A Flash Memory 64Mbit 4Mbitx16 (Model Number: LHF64FG7) Spec. Issue Date: September 2, 2004 Spec No: EL165127A LHF64FG7 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,
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LH28F640BFHE-PTTL70A
64Mbit
4Mbitx16)
LHF64FG7)
EL165127A
LHF64FG7
LH28F640BFHE-PtTL70
LH28F640BFHE-PTTL70A
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Untitled
Abstract: No abstract text available
Text: M28W320FSU M28W640FSU 32Mbit 2Mb x16 and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 2.7V to 3.6V for Input/Output
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M28W320FSU
M28W640FSU
32Mbit
64Mbit
64-KWord
M28W320FSU:
M28W640FSU:
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Untitled
Abstract: No abstract text available
Text: Memory Systems Inc. 3 !nd^ st^ TenJPo i S am 64Mbit - High Speed SDRAM 8Mx8, 4Mx16 HSDRAM Preliminary Data Sheet Features Description • • • • The Enhanced Memory Systems SM3603 and SM3604 HighSpeed SDRAM HSDRAM devices are high performance versions of the proposed JEDEC PC-133 SDRAM. The
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64Mbit
4Mx16
SM3603
SM3604
PC-133
3603T-7
54-pin
3604T-7
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PDF
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Untitled
Abstract: No abstract text available
Text: J5SEnhanced Memory ^sterns Inc. 64Mbit - High Speed SDRAM 8Mx8, 4Mx16 HSDRAM Preliminary Data Sheet Features Description • • • The Enhanced Memory Systems SM3603 and SM3604 HighSpeed SDRAM HSDRAM devices are high performance versions of the proposed JEDEC PC-133 SDRAM. While
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64Mbit
4Mx16
SM3603
SM3604
PC-133
SM3603T-7
SM3604T-7
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS HYB39S64400/800/160AT L 64MBit Synchronous DRAM 64 MBit Synchronous DRAM • High Performance: Multiple Burst Operation -8 -8B -10 Units fCKmax. 125 100 100 MHz tCK3 8 10 10 ns tAC3 6 6 7 ns Automatic Command and Read with Single Write Controlled
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HYB39S64400/800/160AT
64MBit
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