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    8MX8 Price and Stock

    iEi Integration Corporation WAFER-IMX8MP-A/BD-R10

    Single Board Computers
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    Mouser Electronics WAFER-IMX8MP-A/BD-R10
    • 1 $307.69
    • 10 $294.11
    • 100 $285.71
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    Microchip Technology Inc MX852EB0027

    Clock Synthesizer / Jitter Cleaner Tucson 38Pin 5x7mm Synthesizer Module with 25MHz XTA
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    Mouser Electronics MX852EB0027
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    Microchip Technology Inc MX852EB0027-TR

    Clock Generators & Support Products Tucson 38Pin 5x7mm Synthesizer Module with 25MHz XTA
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    Mouser Electronics MX852EB0027-TR
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    Gates 8MX-80S-62

    Belt Sprocket, Poly Chain GT2 Sprockets,8MM | Gates 8MX-80S-62
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    RS 8MX-80S-62 Bulk 1
    • 1 $478.61
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    Gates 8MX-80S-36

    Belt Sprocket, Poly Chain GT2 Sprockets,8MM | Gates 8MX-80S-36
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    RS 8MX-80S-36 Bulk 1
    • 1 $376.8
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    8MX8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M374S1623DT0

    Abstract: M374S1623DT0-C7A
    Text: M374S1623DT0 PC133 Unbuffered DIMM Revision History Revision 0.0 July, 2000 • PC133 first published. REV. 0.0 July, 2000 M374S1623DT0 PC133 Unbuffered DIMM M374S1623DT0 SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		PDF M374S1623DT0 PC133 M374S1623DT0 16Mx72 400mil M374S1623DT0-C7A

    222k

    Abstract: 079R PC-100 PC100-222 KO9018
    Text: REVISION DATE REV DESCRPTION ZONE APPVD 6/26/01 III. TIMING I. DESCRIPTION: Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ W9Q316727KD-222K is a 16Mx72 industry standard 168-pin PC100-222 SDRAM ECC DIMM Manufactured with 18 NEC ELPIDA 8Mx8 400-mil TSOPII-54 100 MHz Synchronous DRAM devices of 12-row, 9-column, 4 -bank addresing.


    Original     		PDF W9Q316727KD-222K 16Mx72 168-pin PC100-222 400-mil TSOPII-54 12-row, 8Mx72. W9Q316727KD-222K D9Q316727KD-222K 222k 079R PC-100 PC100-222 KO9018

    Untitled

    Abstract: No abstract text available
    Text: 168PIN PC133 Unbuffered DIMM 64MB With 8Mx8 CL3 TS8MLS64V6W Description Placement The TS8MLS64V6W is an 8M bit x 64 Synchronous Dynamic RAM high-density for PC-133. The TS8MLS64V6W consists of 8pcs CMOS 8Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and


    Original     		PDF 168PIN PC133 TS8MLS64V6W TS8MLS64V6W PC-133. 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: 168Pin PC133 Unbuffered DIMM 64MB With 8Mx8 CL3 TS8MLS64V6L Description Placement The TS8MLS64V6L is an 8M bit x 64 Synchronous Dynamic RAM high-density for PC-133. The TS8MLS64V6L consists of 8pcs CMOS 8Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and


    Original     		PDF 168Pin PC133 TS8MLS64V6L TS8MLS64V6L PC-133. 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: 168PIN PC66 Unbuffered DIMM 128MB with 8Mx8 CL3 TS16MLS64V1WN Description Placement The TS16MLS64V1WN is a 16M bit x 64 Synchronous Dynamic RAM high-density for PC-66. The TS16MLS64V1WN consists of 16pcs CMOS 8Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and


    Original     		PDF 168PIN 128MB TS16MLS64V1WN TS16MLS64V1WN PC-66. 16pcs 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: PcRam TS16MLE72V6W Transcend Information Inc. Description The TS16MLE72V6W is a 16M bit x 72 Dynamic RAM high density memory module. The TS16MLE72V6W consists of 18pcs CMOS 8Mx8 bit DRAMs and 2pcs 16bits driver mounted on a 168-pin printed circuit board. The TS16MLE72V6W is a Dual In-Line Memory


    Original     		PDF TS16MLE72V6W TS16MLE72V6W 18pcs 16bits 168-pin 216-word 72-bit

    VG36648041DT

    Abstract: VS1664648041D VS864648041D
    Text: VS864648041D,VS1664648041D 8M,16MX64-Bit SDRAM Module VIS Description The VS864648041D and VS1664648041D are 8M x 64 bit and 16M bit x 64 Dual-In-Line synchronous DRAM Module DIMM . It consists of 8/16 CMOS 8Mx8 bit synchronous DRAMs (VG36648041DT) with 4


    Original     		PDF VS864648041D VS1664648041D 16MX64-Bit VS1664648041D VG36648041DT) VS864648041D, PC100/JEDEC PC133 VG36648041DT

    E28F00855-1Megx8

    Abstract: A1712 AN 5151 28F008S5 EDI7F88MB100S EDI7F88MB120S EDI7F88MB90S
    Text: EDI7F88MB 8Meg x 8 Flash Module FIG. 1 BLOCK DIAGRAM EDI7F88MB 8Mx8 DESCRIPTION The EDI7F88MB is organized as a 8Mx8 Flash module. The module is based on Intel's E28F00855-1Megx8 Flash device in a TSOP package which is mounted on an FR4 substrate. A0-A9 W


    Original     		PDF EDI7F88MB EDI7F88MB E28F00855-1Megx8 120ns 28F008S5 A0-A19 DQ0-DQ31 EDI7F88MB90S A1712 AN 5151 EDI7F88MB100S EDI7F88MB120S EDI7F88MB90S

    Enhanced SDRAM

    Abstract: No abstract text available
    Text: 64Mbit – Enhanced SDRAM 8Mx8, 4Mx16 ESDRAM Preliminary Data Sheet Overview Features • • • • • • • • • • • • • • High Performance 166 MHz Superset to SDRAM 100% Pin Compatible with SDRAM 100% Function and Timing Compatible with JEDEC


    Original     		PDF 64Mbit 4Mx16 SM2603T-6 SM2604T-6 SM2603T-7 SM2604T-7 SM2603T-10 SM2604T-10 54-pin Enhanced SDRAM

    SM2603

    Abstract: No abstract text available
    Text: 64Mbit - Enhanced SDRAM 8Mx8, 4Mx16 ESDRAM Product Brief Features • 100% Pin Compatible with SDRAM • 100% Function and Timing Compatible with JEDEC standard SDRAM • Integrated 16Kbit SRAM Row Cache • Four Bank Architecture • Synchronous Operation up to 166MHz


    Original     		PDF 64Mbit 4Mx16 16Kbit 166MHz SM2603T-6 SM2604T-6 SM2603T-7 SM2604T-7 SM2603T-10 SM2604T-10 SM2603

    cmos static ram 1mx8 5v

    Abstract: No abstract text available
    Text: K5P6480YCM - T085 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8 Nand Flash Memory / 8M Bit (1Mx8/512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Nov. 19th 2000 Advanced Information 0.1 -Changed Operating Voltage from 2.4V - 3.0V to 2.7V - 3.3V


    Original     		PDF K5P6480YCM 1Mx8/512Kx16) K5P6480TCM-T085 K5P6480YCM-T085 69-Ball 08MAX cmos static ram 1mx8 5v

    SM3603

    Abstract: Enhanced Memory Systems 8mx8 SM3604T-7
    Text: 64Mbit – High Speed SDRAM 8Mx8, 4Mx16 HSDRAM Data Sheet Features Description • • • • The Enhanced Memory Systems SM3603 and SM3604 HighSpeed SDRAM HSDRAM devices are high performance versions of the proposed JEDEC PC-133 SDRAM. While compatible with standard SDRAM, they provide the faster


    Original     		PDF 64Mbit 4Mx16 SM3603 SM3604 PC-133 SM3603T-7 54-pin SM3604T-7 Enhanced Memory Systems 8mx8

    Untitled

    Abstract: No abstract text available
    Text: K3N7V U 1000B-TC CMOS MASK ROM 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF


    Original     		PDF 1000B-TC 64M-Bit /4Mx16) 100ns 120ns 100pF 44-TSOP2-400

    Untitled

    Abstract: No abstract text available
    Text: K3P7V U 1000B-TC CMOS MASK ROM 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access time Random Access Time/Page Access Time 3.3V Operation : 100/30ns(Max.)@CL=50pF,


    Original     		PDF 1000B-TC 64M-Bit /4Mx16) 100/30ns 120/40ns 100pF 44-TSOP2-400

    Untitled

    Abstract: No abstract text available
    Text: UG58E644 8 8HK(S)G 64M Bytes (8M x 64) DRAM 168Pin DIMM based on 8M x 8 General Description Features The UG58E644(8)8HK(S)G is a 8,388,608 bits by 64 EDO DRAM module . The UG58E644(8)8HK(S)G is assembled using 8 pcs of 8Mx8 4K/8K refresh DRAMs in 400mil SOJ


    Original     		PDF UG58E644 168Pin 400mil ABT16244 240mil 168-pin 1000mil 190Max

    Untitled

    Abstract: No abstract text available
    Text: EDI7F88MB 8Megx8 8Megx8 Flash Module The EDI7F88MB is organized as a 8Mx8 Flash module. The module is based on Intel's E28F008551Megx8 Flash device in a TSOP package which is mounted on an FR4 substrate. Block Diagrams EDI7F88MB 8Megx8 The module offers access times between 90 and


    Original     		PDF EDI7F88MB EDI7F88MB E28F008551Megx8 120ns 28F008S5 A0-A19 DQ0-DQ31

    Untitled

    Abstract: No abstract text available
    Text: UG58W744 8 8HK(S)G 64M Bytes (8M x 72) DRAM 168Pin DIMM With ECC based on 8M x 8 General Description Features The UG58W744(8)8HK(S)G is a 8,388,608 bits by 72 EDO DRAM module With ECC. The UG58W744(8)8HK(S)G is assembled using 9 pcs of 8Mx8 4K/8K refresh DRAMs in a


    Original     		PDF UG58W744 168Pin 168-pin 1250mil) 500Max 100Min 540Min) 010Max

    DS558

    Abstract: 6480A6EWS4G09TC
    Text: 8M x 64 Bit 3.3V UNBUFFERED EDO SODIMM Extended Data Out EDO DRAM SMALL OUTLINE DIMM 6480A6EWS4G09TC 144 Pin 8Mx64 EDO SODIMM Unbuffered, 4k Self Refresh, 3.3V with SPD General Description Pin Assignment Pin# The 6480A6EWS4G09TC is a 8Mx64 bit, 9 chip, 3.3V, 144 Pin SODIMM module consisting of (8) 8Mx8


    Original     		PDF 6480A6EWS4G09TC 8Mx64 256x8 A10/AP DS558-1 DS558

    HYM7V65801BTFG-10S

    Abstract: HYM7V65801BTFG HYM7V65801BTFG-10P HYM7V65801BTFG-8
    Text: 8Mx64 bits PC100 SDRAM Unbuffered DIMM based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V65801B F-Series DESCRIPTION The Hynix HYM7V65801B F-Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of eight 8Mx8bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on


    Original     		PDF 8Mx64 PC100 HYM7V65801B 8Mx64bits 400mil 54pin 168pin 64Mbytes HYM7V65801BTFG-10S HYM7V65801BTFG HYM7V65801BTFG-10P HYM7V65801BTFG-8

    M374S1623ET0

    Abstract: M374S1623ET0-C1L
    Text: M374S1623ET0 PC100 Unbuffered DIMM M374S1623ET0 SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S1623ET0 is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF M374S1623ET0 PC100 M374S1623ET0 16Mx72 400mil 168-pin M374S1623ET0-C1L

    HYM7V73A1601BTFG-75

    Abstract: No abstract text available
    Text: 16Mx72 bits PC133 SDRAM Unbuffered DIMM based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V73A1601B F-Series DESCRIPTION The Hynix HYM7V73A1601B F-Series are 16Mx72bits ECC Synchronous DRAM Modules. The modules are composed of eighteen 8Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin


    Original     		PDF 16Mx72 PC133 HYM7V73A1601B 16Mx72bits 400mil 54pin 168pin 128Mbytes HYM7V73A1601BTFG-75

    HYM7V73A801BTFG-75

    Abstract: No abstract text available
    Text: 8Mx72 bits PC133 SDRAM Unbuffered DIMM based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V73A801B F-Series DESCRIPTION The Hynix HYM7V73A801B F-Series are 8Mx72bits ECC Synchronous DRAM Modules. The modules are composed of nine 8Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP


    Original     		PDF 8Mx72 PC133 HYM7V73A801B 8Mx72bits 400mil 54pin 168pin 64Mbytes HYM7V73A801BTFG-75

    MK32VT1664A-8YC

    Abstract: No abstract text available
    Text: MK32VT1664A-8YC 98.07.17 O K I Semiconductor MK32VT1664A-8YC 16,777,216 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK):_ DESCRIPTION The Oki M K32VT1664A-8YC is a fully decoded, 16,777,216 x 64bit synchronous dynam ic random access memory composed of sixteen 64Mb DRAMs (8Mx8) in TSOP


    OCR Scan     		PDF MK32VT1664A-8YC MK32VT1664A-8YC 64bit 168-pin 16-Meg 64-bit

    Untitled

    Abstract: No abstract text available
    Text: Memory Systems Inc. 3 !nd^ st^ TenJPo i S am 64Mbit - High Speed SDRAM 8Mx8, 4Mx16 HSDRAM Preliminary Data Sheet Features Description • • • • The Enhanced Memory Systems SM3603 and SM3604 HighSpeed SDRAM HSDRAM devices are high performance versions of the proposed JEDEC PC-133 SDRAM. The


    OCR Scan     		PDF 64Mbit 4Mx16 SM3603 SM3604 PC-133 3603T-7 54-pin 3604T-7