8MX8 Search Results

M374S1623DT0

Abstract: M374S1623DT0-C7A
Contextual Info: M374S1623DT0 PC133 Unbuffered DIMM Revision History Revision 0.0 July, 2000 • PC133 first published. REV. 0.0 July, 2000 M374S1623DT0 PC133 Unbuffered DIMM M374S1623DT0 SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

222k

Abstract: 079R PC-100 PC100-222 KO9018
Contextual Info: REVISION DATE REV DESCRPTION ZONE APPVD 6/26/01 III. TIMING I. DESCRIPTION: Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ W9Q316727KD-222K is a 16Mx72 industry standard 168-pin PC100-222 SDRAM ECC DIMM Manufactured with 18 NEC ELPIDA 8Mx8 400-mil TSOPII-54 100 MHz Synchronous DRAM devices of 12-row, 9-column, 4 -bank addresing.

MK32VT1664A-8YC

Contextual Info: MK32VT1664A-8YC 98.07.17 O K I Semiconductor MK32VT1664A-8YC 16,777,216 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK):_ DESCRIPTION The Oki M K32VT1664A-8YC is a fully decoded, 16,777,216 x 64bit synchronous dynam ic random access memory composed of sixteen 64Mb DRAMs (8Mx8) in TSOP

Contextual Info: 168PIN PC133 Unbuffered DIMM 64MB With 8Mx8 CL3 TS8MLS64V6W Description Placement The TS8MLS64V6W is an 8M bit x 64 Synchronous Dynamic RAM high-density for PC-133. The TS8MLS64V6W consists of 8pcs CMOS 8Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and

Contextual Info: 168Pin PC133 Unbuffered DIMM 64MB With 8Mx8 CL3 TS8MLS64V6L Description Placement The TS8MLS64V6L is an 8M bit x 64 Synchronous Dynamic RAM high-density for PC-133. The TS8MLS64V6L consists of 8pcs CMOS 8Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and

Contextual Info: 168PIN PC66 Unbuffered DIMM 128MB with 8Mx8 CL3 TS16MLS64V1WN Description Placement The TS16MLS64V1WN is a 16M bit x 64 Synchronous Dynamic RAM high-density for PC-66. The TS16MLS64V1WN consists of 16pcs CMOS 8Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and

Contextual Info: PcRam TS16MLE72V6W Transcend Information Inc. Description The TS16MLE72V6W is a 16M bit x 72 Dynamic RAM high density memory module. The TS16MLE72V6W consists of 18pcs CMOS 8Mx8 bit DRAMs and 2pcs 16bits driver mounted on a 168-pin printed circuit board. The TS16MLE72V6W is a Dual In-Line Memory

VG36648041DT

Abstract: VS1664648041D VS864648041D
Contextual Info: VS864648041D,VS1664648041D 8M,16MX64-Bit SDRAM Module VIS Description The VS864648041D and VS1664648041D are 8M x 64 bit and 16M bit x 64 Dual-In-Line synchronous DRAM Module DIMM . It consists of 8/16 CMOS 8Mx8 bit synchronous DRAMs (VG36648041DT) with 4

E28F00855-1Megx8

Abstract: A1712 AN 5151 28F008S5 EDI7F88MB100S EDI7F88MB120S EDI7F88MB90S
Contextual Info: EDI7F88MB 8Meg x 8 Flash Module FIG. 1 BLOCK DIAGRAM EDI7F88MB 8Mx8 DESCRIPTION The EDI7F88MB is organized as a 8Mx8 Flash module. The module is based on Intel's E28F00855-1Megx8 Flash device in a TSOP package which is mounted on an FR4 substrate. A0-A9 W

Enhanced SDRAM

Contextual Info: 64Mbit – Enhanced SDRAM 8Mx8, 4Mx16 ESDRAM Preliminary Data Sheet Overview Features • • • • • • • • • • • • • • High Performance 166 MHz Superset to SDRAM 100% Pin Compatible with SDRAM 100% Function and Timing Compatible with JEDEC

SM2603

Contextual Info: 64Mbit - Enhanced SDRAM 8Mx8, 4Mx16 ESDRAM Product Brief Features • 100% Pin Compatible with SDRAM • 100% Function and Timing Compatible with JEDEC standard SDRAM • Integrated 16Kbit SRAM Row Cache • Four Bank Architecture • Synchronous Operation up to 166MHz

cmos static ram 1mx8 5v

Contextual Info: K5P6480YCM - T085 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8 Nand Flash Memory / 8M Bit (1Mx8/512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Nov. 19th 2000 Advanced Information 0.1 -Changed Operating Voltage from 2.4V - 3.0V to 2.7V - 3.3V

SM3603

Abstract: Enhanced Memory Systems 8mx8 SM3604T-7
Contextual Info: 64Mbit – High Speed SDRAM 8Mx8, 4Mx16 HSDRAM Data Sheet Features Description • • • • The Enhanced Memory Systems SM3603 and SM3604 HighSpeed SDRAM HSDRAM devices are high performance versions of the proposed JEDEC PC-133 SDRAM. While compatible with standard SDRAM, they provide the faster

Contextual Info: K3N7V U 1000B-TC CMOS MASK ROM 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF

edo dram 50ns 72-pin simm

Contextual Info: UG216W3258HSG T 64M Bytes (16M x 32) 72Pin SIMM based on 8M X 8 DRAM Features General Description The UG216W3258HSG(T) is a 16,777,216 bits by 32 SIMM module. The UG216W3258HSG(T) is assembled using 8 pcs of 8Mx8 3.3V 4K refresh EDO DRAM in 50 Pin TSOP package mounted on a 72 Pin printed circuit

Contextual Info: UG58E644 8 8HK(S)G 64M Bytes (8M x 64) DRAM 168Pin DIMM based on 8M x 8 General Description Features The UG58E644(8)8HK(S)G is a 8,388,608 bits by 64 EDO DRAM module . The UG58E644(8)8HK(S)G is assembled using 8 pcs of 8Mx8 4K/8K refresh DRAMs in 400mil SOJ

Contextual Info: Memory Systems Inc. 3 !nd^ st^ TenJPo i S am 64Mbit - High Speed SDRAM 8Mx8, 4Mx16 HSDRAM Preliminary Data Sheet Features Description • • • • The Enhanced Memory Systems SM3603 and SM3604 HighSpeed SDRAM HSDRAM devices are high performance versions of the proposed JEDEC PC-133 SDRAM. The

Contextual Info: EDI7F88MB 8Megx8 8Megx8 Flash Module The EDI7F88MB is organized as a 8Mx8 Flash module. The module is based on Intel's E28F008551Megx8 Flash device in a TSOP package which is mounted on an FR4 substrate. Block Diagrams EDI7F88MB 8Megx8 The module offers access times between 90 and

Contextual Info: UG58W744 8 8HK(S)G 64M Bytes (8M x 72) DRAM 168Pin DIMM With ECC based on 8M x 8 General Description Features The UG58W744(8)8HK(S)G is a 8,388,608 bits by 72 EDO DRAM module With ECC. The UG58W744(8)8HK(S)G is assembled using 9 pcs of 8Mx8 4K/8K refresh DRAMs in a

DS558

Abstract: 6480A6EWS4G09TC
Contextual Info: 8M x 64 Bit 3.3V UNBUFFERED EDO SODIMM Extended Data Out EDO DRAM SMALL OUTLINE DIMM 6480A6EWS4G09TC 144 Pin 8Mx64 EDO SODIMM Unbuffered, 4k Self Refresh, 3.3V with SPD General Description Pin Assignment Pin# The 6480A6EWS4G09TC is a 8Mx64 bit, 9 chip, 3.3V, 144 Pin SODIMM module consisting of (8) 8Mx8

HYM7V65801BTFG-10S

Abstract: HYM7V65801BTFG HYM7V65801BTFG-10P HYM7V65801BTFG-8
Contextual Info: 8Mx64 bits PC100 SDRAM Unbuffered DIMM based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V65801B F-Series DESCRIPTION The Hynix HYM7V65801B F-Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of eight 8Mx8bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on

M374S1623ET0

Abstract: M374S1623ET0-C1L
Contextual Info: M374S1623ET0 PC100 Unbuffered DIMM M374S1623ET0 SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S1623ET0 is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

HYM7V73A1601BTFG-75

Contextual Info: 16Mx72 bits PC133 SDRAM Unbuffered DIMM based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V73A1601B F-Series DESCRIPTION The Hynix HYM7V73A1601B F-Series are 16Mx72bits ECC Synchronous DRAM Modules. The modules are composed of eighteen 8Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin

HYM7V73A801BTFG-75

Contextual Info: 8Mx72 bits PC133 SDRAM Unbuffered DIMM based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V73A801B F-Series DESCRIPTION The Hynix HYM7V73A801B F-Series are 8Mx72bits ECC Synchronous DRAM Modules. The modules are composed of nine 8Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP