NMOS DRAM
Abstract: KM4164BP KM4164 km4164b
Text: KM4164B NMOS DRAM 64K x 1 Bit Dynamic RAM with Page Mode FEATURES GENERAL DESCRIPTION • Performance range The KM4164B is a fully decoded NMOS Dynamic Ran dom Access Memory organized as 65,536 one-bit words. The design is optimized for high speed, high perfor
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KM4164B
KM4164B-10
KM4164B-12
KM4164B-15
100ns
120ns
150ns
190ns
220ns
260ns
NMOS DRAM
KM4164BP
KM4164
km4164b
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Untitled
Abstract: No abstract text available
Text: in te i 82C03 CMOS 64K DYNAMIC RAM CONTROLLER Provides All Signals Necessary to NMOS 2164A and CMOS Control (51C64) 64K Dynamic Memories • Provides Refresh/Access Arbitration ■ Internal Clock Capability ■ Directly Addresses and Drives Up to 64 Devices Without External Drivers
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82C03
51C64)
82C03
51C6nd
82C03.
AFN-02144B
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RE 4TP
Abstract: 273tp 82C03
Text: in te i 82C03 CMOS 64K DYNAMIC RAM CONTROLLER • Provides All Signals Necessary to NMOS 2164A and CMOS Control (51C64) 64K Dynamic Memories ■ Internal Clock Capability ■ Directly Addresses and Drives Up to 64 Devices Without External Drivers ■ Provides System Acknowledge and Trans
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82C03
51C64)
51C64
82C03.
AFH-021UB
RE 4TP
273tp
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2164 dynamic ram
Abstract: intel 8203 2164A 8202a intel microprocessor pin diagram 8202A intel 4002 8088 ram 256K pin diagram of intel IC 8203 diagram of IC 8203 Intel 2164
Text: in t e i 82C03 CMOS 64K DYNAMIC RAM CONTROLLER • Provides All Signals Necessary to NMOS 2164A and CMOS Control (51C64) 64K Dynamic Memories Internal Clock Capability ■ Directly Addresses and Drives Up to 64 Devices Without External Drivers Provides System Acknowledge and Trans
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82C03
51C64)
82C03
51C64
82C03.
2164 dynamic ram
intel 8203
2164A
8202a intel microprocessor pin diagram
8202A
intel 4002
8088 ram 256K
pin diagram of intel IC 8203
diagram of IC 8203
Intel 2164
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MBB264A-18
Abstract: No abstract text available
Text: preliminary FUJITSU MOS Memories • MB8264A-12-W, MB8264A-15-W NMOS 65,536-Bit Dynamic Random Access Memory With Wide Temperature Range Description The MB8264A-W Is a 64K x 1 dynamic RAM intended for operation over the case temperature range -55*C to 110 *C. The part Is also
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MB8264A-12-W,
MB8264A-15-W
536-Bit
MB8264A-W
MBB264A-18
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KM424C256Z
Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J
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KM4164BP
KM41C256P
KM41C256J
KM41C256Z
KM41C257P
KM41C257J
KM41C257Z
KM41C258P
KM41C258J
KM41C258Z
KM424C256Z
SIMM 30-pin
30-pin SIMM RAM
KM44C256bp
KM41C1000BJ
257J
KM44C256BZ
1K x4 static ram
30-pin simm memory "16m x 8"
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Untitled
Abstract: No abstract text available
Text: Prelim inary FUJITSU MOS Memories • M B 8 2 6 4 A - 1 2 - W , M B 8 2 6 4 A - 1 5 - W NMOS 65,536-Bit Dynamic Random Access Memory With Wide Temperature Range Description The MB8264A-W is a 64K x 1 dynamic RAM intended for operation over the case temperature range - 5 5 °C to 110°C. The part is also
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536-Bit
MB8264A-W
004pn
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MC3480
Abstract: Dynamic Memory Refresh Controller MC3242A RA54 64k nmos dynamic ram M6800 nmos to ttl interface CASE-710
Text: INTERFACE CIRCUITS continued gïïû ^ Offifetfife}©© ©oû(o] ©©oüSd^D NMOS Memories to TTL Systems MULTIPLEXED 16-PIN RAM CONTROL (For 4K, 16K, and 64K Dynamic Memories) MC3480 — Memory Controller. Used with all three levels of RAM. The memory controller chip is designed to greatly sim
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16-PIN
MC3480
M6800.
MC3242A
MC3480
MC3242A
A12/14
A13/15
Dynamic Memory Refresh Controller
RA54
64k nmos dynamic ram
M6800
nmos to ttl interface
CASE-710
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MB8264A-15
Abstract: MB8264A-12 MB8264A-12-W MB8264A-15-W MB8264A MB82S4A-1S-W
Text: P relim inary F U J IT S U M O S M e m o rie s M B 8 2 6 4 A -1 2 -W , M B 8 2 6 4 A -1 5 -W NMOS 65,536-Bit Dynamic Random Access Memory With Wide Temperature Range Description The MB8264A-W is a 64K x 1 dynamic RAM Intended for operation over the case temperature range - 5 5 °C to 110°C. The part is also
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MB8264A-12-W,
MB8264A-15-W
536-Bit
MB8264A-W
MB8294A-12-W
MB82S4A-1B-W
MB8264A-15
MB8264A-12
MB8264A-12-W
MB8264A-15-W
MB8264A
MB82S4A-1S-W
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LH2464-12
Abstract: LH2464-10 lh2464 dynamic ram nmos 18 pins LH2464-15 64k nmos dynamic ram TOED30
Text: LH2464 FEA T U R ES NMOS 256K 64K x 4 Dynamic RAM DESCRIPTION • 65,536 x 4 bit organization • A c c e s s times: 100/120/150 ns (M AX.) • C y c le times: 200/220/260 ns (MIN.) • P a g e mode, Read-M odify-W rite operation T h e LH 2 4 6 4 is a 65,536 x 4 bit d yn a m ic R A M fabri
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LH2464
18-pin,
300-mil
DIP18-P-300)
LH2464-10
LH2464-12
LH2464-10
dynamic ram nmos 18 pins
LH2464-15
64k nmos dynamic ram
TOED30
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a5 gnd
Abstract: NTE4164 NTE2117 NTE2164 BB 298 NTE2102 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128
Text: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8 -B it Multiplying D/A Converter NTE2102 16-Lead DIP, See Diag. 249 NMOS, 1K Static RAM (SRAM), 350ns NTE2104 16-Lead DIP, See Diag. 249 NMOS, 4K Dynamic RAM (DRAM), 200ns
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NTE2056
16-Lead
NTE2102
350ns
NTE2104
200ns
NTE2107
22-Lead
a5 gnd
NTE4164
NTE2117
NTE2164
BB 298
64k dynamic RAM
64k nmos static ram
NTE2114
NTE2128
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AK41128
Abstract: AK42064
Text: HIGH DENSITY DYNAMIC RANDCM ACCESS MEMORY MODULES ACCUTEK DESCRIPTION The Accutek family of high density dynamic RAM modules are comprised of 64K x 1 or 256K x 1 dynamic RAMs packaged in LCCs or PLCCs along with chip capacitors, mounted to multi-layer ceramic
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150ns
AK41128
AK42064
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LH2464-12
Abstract: LH2464-10 LH2464-15 dynamic ram nmos 18 pins lh2464 AS2v
Text: LH2464 FEATURES • 65,536 x 4 bit organization • Access times: 100/120/150 ns MAX. • Cycle times: 200/220/260 ns (MIN.) • Page mode, Read-Modify-Write operation • Power supply: +5 V + 10% • Power consumption (MAX.): Operating: 523/457/413 mW (MAX.)
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LH2464
18-pin,
300-mil
LH2464
DIP18-P-300)
LH2464-10
LH2464-12
LH2464-10
LH2464-15
dynamic ram nmos 18 pins
AS2v
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lh2465
Abstract: No abstract text available
Text: LH2465 FEATURES • 65,536 x 4 bit organization • Access times: 120/150 ns MAX. • Cycle times: 220/260 ns (MIN.) • Nibble-Mode, Read-Modify-Write operation • Power supply: +5 V ± 10% • Power consumption: Operating: 457/413 mW (MAX.) Standby: 27.5 mW (MAX.)
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LH2465
LH2465
18-pin
7J7777W
18-pin,
300-mil
DIP18-P-300)
LH2465-12
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LM33256
Abstract: LM33256N 64K x 8 BIT DYNAMIC RAM LM33256K sanyo LC3564PL lc3664* sanyo LC324256 4m static ram 8K Static RAM 16k nmos dynamic ram
Text: SANYO SEMICONDUCTOR CORP Continued from preceding page. 3SE D • 7 n 7 D 7 b 0QD75b3 S ■ T'W'Zl-V- M E M O R I E S monolithic integrated circuit —-v.y *f* ; Type 1 . ij Package' Pins 4 Package’ -■Circuit Functions & Applications c : * j: MainSjedficafibns
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0QD75b3
150ns,
versionofLC3518B
ofLC3518B
ofLC3518BL
120ns,
LM33256
LM33256N
64K x 8 BIT DYNAMIC RAM
LM33256K
sanyo LC3564PL
lc3664* sanyo
LC324256 4m
static ram 8K
Static RAM
16k nmos dynamic ram
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MB8264
Abstract: MB8264-15 i-117 mb81416
Text: NMOS Dynamic RAMs Quick Cuide To Products in This Section D ev Ice O rg an ization Ac c m « Tim « max Pow er S u p p ly Volts P o w er D issip atio n Package P ag e MRM17-10 V U i117-12 16K x 1 16K x 1 100 nS 120 nS +5 +5 182/20 mW 160/20 mW 16-pin 16-pin
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MB8264A-10
r264A-12
B264A-15
-264A-12W
MBH264A-15W
H265-20
bk265A-l0
MB8265A-12
Vbc265A
MB8266A-1G
MB8264
MB8264-15
i-117
mb81416
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NTE6802
Abstract: NTE6532
Text: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE6507 28-Lead DI P, See Diag. 253 NMOS, 8-B it Microprocessor (MPU) w/On Chip Clock OSC R E 3 rf_V - / _ Q 0 2 (Outp) V ssH Q 0 0 (In) NTE6508 16-Lead DIP, See Diag. 249 CMOS, 1K Static RAM (SRAM), 300ns
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NTE6507
28-Lead
NTE6532
40-Lead
NTE6508
16-Lead
300ns
NTE6802
NTE6532
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Untitled
Abstract: No abstract text available
Text: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8-B it Multiplying D/A Converter Range Control 0 Compensation A6 n 0 A7 0 V ret(-) A 5B ^ A1 Q 0 A8 (LSB) A2 B 0 Data Out a: Q A7 A3 Q Q Data In A 2 g 0 A6 A4 Q j A0 Q
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NTE2056
16-Lead
NTE2102
350ns
NTE2104
200ns
NTE2107
22-Lead
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Untitled
Abstract: No abstract text available
Text: irrteT ADWAN ! OMIFÜKßMTTOOM M51C259HL HIGH PERFORMANCE LOW POWER STATIC COLUMN 64K x 4 CHMOS DYNAMIC RAM Military Maximum Access Time ns) M51C259HL-15 M51C259HL-20 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHMOS Standby Current (mA)
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M51C259HL
M51C259HL-15
M51C259HL-20
M51C259HL
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M51C259HL
Abstract: M51C259HL-15 M51C259HL-20
Text: in te T M51C259HL HIGH PERFORMANCE LOW POWER STATIC COLUMN 64K x 4 CHMOS DYNAMIC RAM M ilitary M51C259HL-15 M51C259HL-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHMOS Standby Current (mA) 0.1 0.1 Static Column Mode Operation
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M51C259HL
M51C259HL-15
M51C259HL-20
M51C259HL-20
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AM9064-15
Abstract: AM9064-15PC am9064 AM9064-10 R/Detector/"Detector IC"/"CD"/Am2964B/Am9064-15
Text: Am9064 65,536 x 1 Dynamic RAM DISTINCTIVE CHARACTERISTICS High speed RAS access of 100 and 120ns Single +5V ±10% power supply Low power 22mW standby - 330mW active — 220ns cycle time - 385mW active — 190ns cycle time Read, Write, Read-Modify-Write, Page-Mode and RASOnly refresh capability
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Am9064
120ns
330mW
220ns
385mW
190ns
220ns
Am9064
03759B
AM9064-15
AM9064-15PC
AM9064-10
R/Detector/"Detector IC"/"CD"/Am2964B/Am9064-15
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NTE4256
Abstract: No abstract text available
Text: r MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2732A 24-Lead DIP, See Diag. 300 NMOS, 32K EPROM, UV, 200ns NTE2764 28-Lead DIP, See Diag. 510 NMOS, 64K EPROM, 200ns VppO A? 0 ~ ^ r _ 0 vcc A6 1 2 AS AS 1 B A9 A4 § j ] A11 ^ ÖE/Vpp A3 I A2 1
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NTE2732A
24-Lead
200ns
NTE2764
28-Lead
NTE2800
14-Lead
1400-Bit
NTE4256
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PT 1017
Abstract: No abstract text available
Text: CMOS STATIC RAM 256K 64K x 4-BIT ADVANCE INFORMATION IDT71258 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed (equal access and cycle time) — Military: 25/35/45/55ns (max.) — Commercial: 20/25/35/45ns (max.) • Low-power operation
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IDT71258
25/35/45/55ns
20/25/35/45ns
IDT71258S
400mW
400nW
IDT712581Active:
350mW
100jiW
24-pin,
PT 1017
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IDT71258
Abstract: No abstract text available
Text: CMOS STATIC RAM 256K 64K x 4-BIT ADVANCE INFORMATION IDT71258 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed (equal access and cycle time) — Military: 25/35/45/55ns (max.) — Commercial: 20/25/35/45ns (max.) • Low-power operation
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IDT71258
25/35/45/55ns
20/25/35/45ns
IDT71258S
400mW
IDT712581Active:
350mW
24-pin,
24-pin
28-pin
IDT71258
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